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1. 发明授权

US11935846B2 Electronic device 有权
公开(公告)号：US11935846B2
公开(公告)日：2024-03-19
申请号：US18310094
申请日：2023-05-01
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Yoichiro Kurita , Takanobu Kamakura , Masayuki Sugiura , Yoshiaki Aizawa
IPC分类号： H01L23/64 , H01L23/00 , H01L23/31 , H01L23/367
CPC分类号： H01L23/645 , H01L23/3107 , H01L23/367 , H01L24/48 , H01L2224/48227
摘要： An electronic device includes a substrate, a first insulating film on the substrate, a second insulating film on the first insulating film, first and second coils respectively in the first and second insulating films, first and second terminals, and first and second connection conductors. The first and second insulating films contact each other so that the first and second coils are magnetically coupled. The first insulating film includes a first non-contact portion not contacting the second insulating film. One of the first and second insulating films includes a second non-contact portion not contacting the first or second insulating film. The first terminal is provided on the first non-contact portion and electrically connected to the first coil. The second terminal is provided on the second non-contact portion and electrically connected to the second coil. The first and second connection conductors are connected to the first and second terminals, respectively.

2. 发明授权

US11676919B2 Electronic device 有权
公开(公告)号：US11676919B2
公开(公告)日：2023-06-13
申请号：US17194031
申请日：2021-03-05
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Yoichiro Kurita , Takanobu Kamakura , Masayuki Sugiura , Yoshiaki Aizawa
IPC分类号： H01L23/48 , H01L23/64 , H01L23/00 , H01L23/367 , H01L23/31
CPC分类号： H01L23/645 , H01L23/3107 , H01L23/367 , H01L24/48 , H01L2224/48227
摘要： An electronic device includes a substrate, a first insulating film on the substrate, a second insulating film on the first insulating film, first and second coils respectively in the first and second insulating films, first and second terminals, and first and second connection conductors. The first and second insulating films contact each other so that the first and second coils are magnetically coupled. The first insulating film includes a first non-contact portion not contacting the second insulating film. One of the first and second insulating films includes a second non-contact portion not contacting the first or second insulating film. The first terminal is provided on the first non-contact portion and electrically connected to the first coil. The second terminal is provided on the second non-contact portion and electrically connected to the second coil. The first and second connection conductors are connected to the first and second terminals, respectively.

3. 发明授权

US09123796B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09123796B2
公开(公告)日：2015-09-01
申请号：US14176778
申请日：2014-02-10
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Masayuki Sugiura
IPC分类号： H01L21/331 , H01L29/78
CPC分类号： H01L29/78 , H01L29/41733 , H01L29/42384 , H01L29/78615 , H01L29/78654
摘要： A semiconductor device includes a gate electrode, source regions and drain regions, a body contact region, and a body bias control electrode. The gate electrode includes a plurality of first portions arranged in parallel with a first distance therebetween, and a second portion connecting the plurality of first portions. The source regions and the drain regions are provided between the plurality of first portions. The body contact region is disposed on the other side of the source regions and the drain regions relative to the second portion. The body bias control electrode is provided on the body contact region in parallel with the second portion at a second distance from the second portion that is greater than the first distance, and is electrically connected to the body contact region.
摘要翻译：半导体器件包括栅电极，源极区和漏极区，体接触区和体偏置控制电极。栅极电极包括多个第一部分，它们之间以第一距离平行布置，第二部分连接多个第一部分。源极区域和漏极区域设置在多个第一部分之间。体接触区域相对于第二部分设置在源极区域和漏极区域的另一侧上。身体偏置控制电极在距第二部分第二距离处与第二部分平行地设置在身体接触区域上，该第二部分大于第一距离，并且电连接到身体接触区域。

4. 发明授权

US08836418B2 High frequency semiconductor switch 有权
标题翻译：高频半导体开关
公开(公告)号：US08836418B2
公开(公告)日：2014-09-16
申请号：US13931237
申请日：2013-06-28
申请人： Kabushiki Kaisha Toshiba
发明人： Masayuki Sugiura
IPC分类号： H01L25/00 , H01L23/66
CPC分类号： H01L23/66 , H01L24/06 , H01L2223/6677 , H01L2224/02166 , H01L2224/0401 , H01L2224/05093 , H01L2224/16225 , H01L2924/13091 , H01L2924/19105 , H01L2924/00
摘要： A switch circuit, a control circuit, a grounding wire and a control wire are formed on a substrate. The switch circuit connects an antenna terminal with one of multiple high frequency terminals. The control circuit outputs a control signal to the switch circuit. The grounding wire is disposed between the switch circuit and the control circuit and extends from a location proximate to an edge of the substrate to a location proximate to an opposite edge of the substrate. The control wire that carries the control signal is disposed between one end of the grounding wire and an edge of the semiconductor substrate.
摘要翻译：开关电路，控制电路，接地线和控制线形成在基板上。开关电路将天线端子与多个高频端子中的一个连接。控制电路向开关电路输出控制信号。接地线设置在开关电路和控制电路之间并且从靠近基板的边缘的位置延伸到接近基板的相对边缘的位置。承载控制信号的控制线设置在接地线的一端和半导体衬底的边缘之间。

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