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    • 6. 发明申请
    • PATTERN FORMING METHOD AND MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM
    • 磁记录介质的图案形成方法和制造方法
    • US20150310885A1
    • 2015-10-29
    • US14455058
    • 2014-08-08
    • Kabushiki Kaisha Toshiba
    • Kaori KimuraAkira FujimotoAkira Watanabe
    • G11B5/84G11B5/855
    • G11B5/855
    • According to one embodiment, disclosed is a pattern forming method including preparing a second dispersion by adding a second protective group and second solvent to fine particles including a first protective group whose surface polarity is close to that of the substrate, the fine particles containing, at least on the surface thereof, a material selected from Al, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Sn, Mo, Ta, W, Au, Ag, Pd, Cu, Pt, and an oxide thereof, modifying the fine particles including the first protective group with the second protective group, adding a viscosity adjustment agent to the dispersion containing the fine particles to prepare a coating solution, and applying the coating solution on the substrate to form a fine particle layer thereon.
    • 根据一个实施方案,公开了一种图案形成方法,包括通过向其表面极性接近于底物的第一保护基的细颗粒添加第二保护基和第二溶剂来制备第二分散体,所述第一保护基的微粒含有 最少在其表面上选自Al,Ti,V,Cr,Mn,Fe,Co,Ni,Zn,Y,Zr,Sn,Mo,Ta,W,Au,Ag,Pd,Cu,Pt, 和其氧化物,用第二保护基改性包括第一保护基的细颗粒,向含有微粒的分散体中加入粘度调节剂以制备涂布溶液,并将涂布溶液涂布在基材上以形成微细 颗粒层。
    • 9. 发明申请
    • SEMICONDUCTOR LIGHT EMITTING ELEMENT
    • 半导体发光元件
    • US20130248912A1
    • 2013-09-26
    • US13849822
    • 2013-03-25
    • KABUSHIKI KAISHA TOSHIBA
    • Kenji NAKAMURAAkira FujimotoTsutomu NakanishiRyota KitagawaKoji AsakawaTakanobu KamakuraShinji Nunotani
    • H01L33/58
    • H01L33/58H01L33/44
    • According to one embodiment, a semiconductor light emitting element includes a stacked body and an optical layer. The stacked body has a major surface and includes a light emitting layer. The optical layer is in contact with the surface and includes a dielectric body, first particles, and second particles. The optical layer includes a first region including the dielectric body and the first particles and does not include the second particles and a second region including the dielectric body and the second particles. A sphere-equivalent diameter of the first particle is not less than 1 nanometer and not more than 100 nanometers. A sphere-equivalent diameter of the second particle is more than 300 nanometers and less than 1000 nanometers. An average refractive index of the first region is larger than a refractive index of the stacked body and smaller than a refractive index of the second particle.
    • 根据一个实施例,半导体发光元件包括层叠体和光学层。 该层叠体具有主表面并且包括发光层。 光学层与表面接触并且包括介电体,第一颗粒和第二颗粒。 光学层包括包括电介质体和第一颗粒的第一区域,并且不包括第二颗粒和包括电介质体和第二颗粒的​​第二区域。 第一颗粒的球体当量直径不小于1纳米且不大于100纳米。 第二颗粒的​​球体当量直径大于300纳米且小于1000纳米。 第一区域的平均折射率大于层叠体的折射率,小于第二粒子的折射率。