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1. 发明授权

US11709433B2 Device-like metrology targets 有权
公开(公告)号：US11709433B2
公开(公告)日：2023-07-25
申请号：US17689934
申请日：2022-03-08
申请人： KLA-Tencor Corporation
发明人： Vladimir Levinski , Amnon Manassen , Eran Amit , Nuriel Amir , Liran Yerushalmi , Amit Shaked
IPC分类号： G03F7/20 , G03F7/00
CPC分类号： G03F7/70625 , G03F7/70633 , G03F7/70683
摘要： Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

2. 发明授权

US11158548B2 Overlay measurement using multiple wavelengths 有权
公开(公告)号：US11158548B2
公开(公告)日：2021-10-26
申请号：US16092559
申请日：2018-09-03
申请人： KLA-TENCOR CORPORATION
发明人： Yuval Lamhot , Eran Amit , Einat Peled , Noga Sella , Wei-Te Cheng , Ido Adam
IPC分类号： H01L21/00 , H01L21/66 , G01N21/31 , H01L21/67
摘要： A method of determining overlay (“OVL”) in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including +1 and −1 diffraction patterns. A first and second differential signal may be determined for respective pixels in each image by subtracting opposing pixels from the +1 and −1 diffraction orders for each of the multiple wavelengths. An OVL for the respective pixels may be determined based on analyzing the differential signals from multiple wavelengths simultaneously. Then an OVL for the pattern may be determined as a weighted average of the OVL of the respective pixels.

3. 发明申请

US20200159129A1 Single Cell Grey Scatterometry Overlay Targets and Their Measurement Using Varying Illumination Parameter(s) 审中-公开
公开(公告)号：US20200159129A1
公开(公告)日：2020-05-21
申请号：US16491963
申请日：2019-08-05
申请人： KLA-TENCOR CORPORATION
发明人： Amnon Manassen , Yuri Paskover , Eran Amit
IPC分类号： G03F7/20 , G01B11/27 , G01B9/02
摘要： Scatterometry overlay (SCOL) measurement methods, systems and targets are provided to enable efficient SCOL metrology with in-die targets. Methods comprise generating a signal matrix by: illuminating a SCOL target at multiple values of at least one illumination parameter, and at multiple spot locations on the target, wherein the illumination is at a NA (numerical aperture)>⅓ yielding a spot diameter

4. 发明授权

US10365230B1 Scatterometry overlay based on reflection peak locations 有权
公开(公告)号：US10365230B1
公开(公告)日：2019-07-30
申请号：US14661448
申请日：2015-03-18
申请人： KLA-Tencor Corporation
发明人： Eran Amit , Tzahi Grunzweig
IPC分类号： G01N21/956 , G01B11/27
摘要： Metrology methods and modules are provided, which comprise measuring intensity spatial distributions and peaks of spots at the pupil plane of a metrology system that correspond to various diffraction orders scattered from target cells and calculating overlay(s) of the target cell(s) from the measured intensity spatial distributions and peaks. For example, intensity peak or distribution of zeroth diffraction orders from four cells, first diffraction orders from two cells as well as diffraction orders from a single cell may be used to derive an overlay estimation, which may also be compared to standard overlay measurements for different purposes. Intensity spatial distributions may also be used to derive weight function for adjusting measurements or the metrology system.

5. 发明申请

US20190004438A1 DEVICE METROLOGY TARGETS AND METHODS 审中-公开
公开(公告)号：US20190004438A1
公开(公告)日：2019-01-03
申请号：US16102424
申请日：2018-08-13
申请人： KLA-Tencor Corporation
发明人： Eran Amit , Daniel Kandel , Dror Alumot , Amit Shaked , Liran Yerushalmi
IPC分类号： G03F7/20 , H01L21/66
摘要： An overlay metrology system includes one or more processors coupled to an illumination source to direct illumination to a sample and a detector to capture diffracted orders of radiation from the sample. The system may generate overlay sensitivity calibration parameters based on differential measurements of a calibration target including two overlay target cells on the sample, where first-layer target elements and second-layer target elements of the overlay target cells are distributed with a common pitch along a measurement direction and are misregistered with a selected offset value in opposite directions. The system may further determine overlay measurements based on differential measurements of additional overlay target cells with two wavelengths, where first-layer target elements and second-layer target elements of the additional overlay target cells are distributed with the common pitch and are formed to overlap symmetrically. The system may further adjust the overlay measurements with the overlay sensitivity calibration parameters.

6. 发明申请

US20180188663A1 Device-Like Metrology Targets 审中-公开
公开(公告)号：US20180188663A1
公开(公告)日：2018-07-05
申请号：US15442111
申请日：2017-02-24
申请人： KLA-Tencor Corporation
发明人： Vladimir Levinski , Amnon Manassen , Eran Amit , Nuriel Amir , Liran Yerushalmi , Amit Shaked
IPC分类号： G03F9/00 , G01B11/27
CPC分类号： G03F7/70625 , G03F7/70633 , G03F7/70683
摘要： Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

7. 发明申请

US20160266505A1 DEVICE METROLOGY TARGETS AND METHODS 审中-公开
标题翻译：设备计量目标和方法
公开(公告)号：US20160266505A1
公开(公告)日：2016-09-15
申请号：US15159009
申请日：2016-05-19
申请人： KLA-Tencor Corporation
发明人： Eran Amit , Daniel Kandel , Dror Alumot , Amit Shaked , Liran Yerushalmi
IPC分类号： G03F9/00
CPC分类号： G03F7/70633 , H01L22/12 , H01L27/0207 , H01L27/092
摘要： Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Several models are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs, and the filling of the surroundings of targets and target elements with patterns which are based on device patterns improve process compatibility. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.
摘要翻译：提供了计量方法和目标，将计量过程超越现有技术扩展到多层目标，准周期目标和设备样目标，而不必沿着设备设计的关键方向引入偏移量。公开了用于导出诸如来自多层目标的覆盖层的度量数据的几个模型，并且提供了相应的目标配置以实现这种测量。显示基于设备模式的准周期性目标，以改善目标和设备设计之间的相似性，并且使用基于设备模式的模式来填充目标和目标元素的环境，从而提高了流程兼容性。偏移仅在非关键方向引入，和/或灵敏度被校准，以便与多层测量和准周期性目标测量的解决方案一起使用直接设备光学测量测量。

8. 发明申请

US20220197152A1 DEVICE-LIKE METROLOGY TARGETS 有权
公开(公告)号：US20220197152A1
公开(公告)日：2022-06-23
申请号：US17689934
申请日：2022-03-08
申请人： KLA-Tencor Corporation
发明人： Vladimir Levinski , Amnon Manassen , Eran Amit , Nuriel Amir , Liran Yerushalmi , Amit Shaked
IPC分类号： G03F7/20
摘要： Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

9. 发明授权

US11248905B2 Machine learning in metrology measurements 有权
公开(公告)号：US11248905B2
公开(公告)日：2022-02-15
申请号：US15750972
申请日：2017-12-06
申请人： KLA-TENCOR CORPORATION
发明人： Eran Amit
IPC分类号： G01B11/27 , G03F7/00 , G06N99/00 , G06N20/00 , G06F30/39 , G03F7/20 , G06F30/398
摘要： Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Machine learning algorithm application to measurements and/or simulations of metrology measurements of metrology targets are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

10. 发明申请

US20200381312A1 OVERLAY MEASUREMENT USING MULTIPLE WAVELENGTHS 审中-公开
公开(公告)号：US20200381312A1
公开(公告)日：2020-12-03
申请号：US16092559
申请日：2018-09-03
申请人： KLA-TENCOR CORPORATION
发明人： Yuval Lamhot , Eran Amit , Einat Peled , Noga Sella , Wei-Te Cheng , Ido Adam
IPC分类号： H01L21/66 , H01L21/67 , G01N21/31
摘要： A method of determining overlay (“OVL”) in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including +1 and −1 diffraction patterns. A first and second differential signal may be determined for respective pixels in each image by subtracting opposing pixels from the +1 and −1 diffraction orders for each of the multiple wavelengths. An OVL for the respective pixels may be determined based on analyzing the differential signals from multiple wavelengths simultaneously. Then an OVL for the pattern may be determined as a weighted average of the OVL of the respective pixels.

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