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1. 发明授权

US4738602A Method for manufacturing an apex seal for a rotary piston engine using high energy heating radiation 失效
标题翻译：使用高能量加热辐射制造用于旋转活塞发动机的顶点密封件的方法
公开(公告)号：US4738602A
公开(公告)日：1988-04-19
申请号：US938080
申请日：1986-12-04
申请人： Junichi Yamamoto , Yoshifumi Yamamoto , Katsuya Ohuchi , Tsutomu Shimizu
发明人： Junichi Yamamoto , Yoshifumi Yamamoto , Katsuya Ohuchi , Tsutomu Shimizu
IPC分类号： F01C19/02 , C04B41/50 , C04B41/80 , C04B41/85 , F01C19/00 , F01C19/04 , F01C1/22
CPC分类号： C04B41/009 , C04B41/5096 , C04B41/85 , F01C19/005 , Y10S29/024 , Y10T29/49234 , Y10T29/49297 , Y10T29/49995
摘要： A method for manufacturing an apex seal for a rotary piston engine comprising steps of preparing an apex seal blank made of ceramic material, and applying a high energy heating radiation to the sliding surface of the apex seal blank to form a roughened and porous structure on the surface portion of the apex seal blank. The high energy heating radiation is desirably applied to the apex seal blank under a non-oxidizing atmosphere so that an oxidization of the components of the ceramic material can be prevented.
摘要翻译：一种用于制造用于旋转活塞发动机的顶点密封件的方法，包括以下步骤：制备由陶瓷材料制成的顶点密封坯料，并且将高能量加热辐射施加到顶部密封坯料的滑动表面，以在顶部密封坯料的滑动表面上形成粗糙且多孔的结构顶端密封坯料的表面部分。在非氧化性气氛下，希望将高能量加热辐射施加到顶点密封坯料，从而可以防止陶瓷材料的组分的氧化。

2. 发明授权

US4755116A Rotor housing for a rotary piston engine having softened areas surrounding the plug holes 失效
标题翻译：用于旋转活塞发动机的转子壳体，其具有围绕塞孔的软化区域
公开(公告)号：US4755116A
公开(公告)日：1988-07-05
申请号：US26469
申请日：1987-03-16
申请人： Kouji Tarumoto , Junichi Yamamoto , Yoshifumi Yamamoto
发明人： Kouji Tarumoto , Junichi Yamamoto , Yoshifumi Yamamoto
IPC分类号： F02B55/08 , F01C21/10 , F02B53/12 , F02B55/00 , F01C21/00
CPC分类号： F01C21/106 , F02B55/00 , Y02T10/17 , Y10T29/49234
摘要： A rotor housing for a rotary piston engine having improved gas sealing property between the inner surface and apex seals mounted on a rotor. The rotor housing has an inner surface applied with a hard layer such as chrome plating. The portions of the hard layer surrounding openings of plug holes at the inner surface side are formed with softened areas having lower hardness than the apex seals. The softened areas can be made by a high-energy beam such as a laser beam. Should portions surrounding the openings of the plug holes be thermally deformed to project inward and scratch the apex seals, the projected portions formed of the softened areas will be worn before the apex seals. Hence, uneven wearing of the apex seals can be avoided, which prevents degradation of the gas sealing property and consequently prevents drop in the compression pressure in the working chambers.
摘要翻译：一种用于旋转活塞式发动机的转子壳体，其在内表面和安装在转子上的顶点密封之间具有改进的气密性。转子壳体具有施加有诸如镀铬的硬质层的内表面。围绕内表面侧的插孔的开口的硬层的部分形成有具有比顶点密封件低的硬度的软化区域。软化区域可以由诸如激光束的高能束制成。如果围绕插孔的开口的部分热变形以向内突出并刮擦顶点密封，则由软化区域形成的突出部分将在顶点密封之前被磨损。因此，可以避免顶点密封件的不均匀磨损，防止气体密封性能的劣化，从而防止工作室内的压缩压力下降。

3. 发明授权

US4774393A Slide contacting member and production method therefor 失效
标题翻译：滑动接触构件及其制造方法
公开(公告)号：US4774393A
公开(公告)日：1988-09-27
申请号：US37957
申请日：1987-04-13
申请人： Kouji Tarumoto , Junichi Yamamoto , Yoshifumi Yamamoto
发明人： Kouji Tarumoto , Junichi Yamamoto , Yoshifumi Yamamoto
IPC分类号： C23C10/28 , B23K26/00 , B23K26/14 , B23K35/30 , F02B77/02 , F16J9/26 , F16J10/04
CPC分类号： F16J10/04 , B23K26/0084 , B23K26/1436 , B23K26/1476 , B23K35/308 , F02B77/02 , F16J9/26
摘要： A slide contacting member which is subjected to slide contact with a counter member. The slide contacting member is made by applying a hard layer, e.g., chromium, onto a parent material, irradiating the hard layer with a high energy density laser beam onto the plating under conditions such that concavities having a softened layer are formed thereon, the concavities being used to keep oil during the contact with the other member. The hard layer is finished grinded after irradiation.
摘要翻译：与台面构件滑动接触的滑动接触构件。滑动接触构件通过将硬质层例如铬施加到母体材料上，将高能量密度激光束的硬层照射到电镀上，使得在其上形成有软化层的凹部的条件下，凹部用于在与另一个成员接触期间保持油。硬化层经辐照后研磨成型。

4. 发明授权

US07519593B2 Data searching system, method of synchronizing metadata and data searching apparatus 有权
标题翻译：数据搜索系统，同步元数据和数据搜索装置的方法
公开(公告)号：US07519593B2
公开(公告)日：2009-04-14
申请号：US11553711
申请日：2006-10-27
申请人： Kazuko Abe , Junichi Yamamoto , Rei Yano , Masataka Yamada , Yasuhide Kurosaki , Michiyo Ikegami , Kyoji Yamashita , Kouji Gouda
发明人： Kazuko Abe , Junichi Yamamoto , Rei Yano , Masataka Yamada , Yasuhide Kurosaki , Michiyo Ikegami , Kyoji Yamashita , Kouji Gouda
IPC分类号： G06F7/00 , G06F17/30 , G06F12/00
CPC分类号： G06F17/30964 , Y10S707/99933 , Y10S707/99936 , Y10S707/99953
摘要： A data searching unit 12 of a data searching apparatus 10 Obtains, according to a searching request including a search condition specified by a data searching application 16, metadata which satisfy the search condition from a data storage unit 11, and instructs an external communication unit 15 to request searching of data to a data providing apparatus 20 with the same search condition.
摘要翻译：数据搜索装置10的数据搜索单元12根据包括由数据搜索应用16指定的搜索条件的搜索请求，从数据存储单元11获得满足搜索条件的元数据，并指示外部通信单元15 请求搜索具有相同搜索条件的数据提供装置20。

5. 发明申请

US20070020637A1 Full-length cDNA 审中-公开
标题翻译：全长cDNA
公开(公告)号：US20070020637A1
公开(公告)日：2007-01-25
申请号：US10760320
申请日：2004-01-21
申请人： Takao Isogai , Tomoyasu Sugiyama , Tetsuji Otsuki , Al Wakamatsu , Hiroyuki Sato , Shizuko Ishii , Junichi Yamamoto , Yuko Isono , Keiichi Nagai , Ryotaro Irie
发明人： Takao Isogai , Tomoyasu Sugiyama , Tetsuji Otsuki , Al Wakamatsu , Hiroyuki Sato , Shizuko Ishii , Junichi Yamamoto , Yuko Isono , Keiichi Nagai , Ryotaro Irie
IPC分类号： C12Q1/68 , C07H21/04
CPC分类号： C07K14/47
摘要： Novel full-length cDNAs are provided. 2,495 cDNA derived from human have been isolated. The full-length nucleotide sequences of the cDNA and amino acid sequences encoded by the nucleotide sequences have been determined. Because the cDNA of the present invention are full-length and contain the translation start site, they provide information useful for analyzing the functions of the polypeptide.
摘要翻译：提供新的全长cDNA。已经分离出来自人的2,495个cDNA。已经确定了由核苷酸序列编码的cDNA和氨基酸序列的全长核苷酸序列。因为本发明的cDNA是全长的并含有翻译起始位点，所以它们提供了可用于分析多肽功能的信息。

6. 发明申请

US20060022230A1 Solid-state image sensing device and method for manufacturing the same 有权
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US20060022230A1
公开(公告)日：2006-02-02
申请号：US11155643
申请日：2005-06-20
申请人： Junichi Yamamoto , Yasutaka Nakashiba
发明人： Junichi Yamamoto , Yasutaka Nakashiba
IPC分类号： H01L21/00 , H01L31/062
CPC分类号： H01L27/14689 , H01L27/14634 , H01L27/14806
摘要： In the solid-state image sensing device, a first N type semiconductor region and an N well of a PMOS region are formed in the same process, thereby making the first N type semiconductor region and the N well in the PMOS region substantially equal in N type impurity concentration-depth profile. By forming the first N type semiconductor region and the N well in the same process, the number of manufacturing process for the solid-state image sensing device can be decreased. It is, therefore, possible to suppress excessive application of heat history to the solid-state image sensing device during ion implantation and diffusion of N type impurity. Accordingly, by suppressing excessive diffusion of impurity and the like resulting from the excessive application of the heat history to the solid-state image sensing device, yield of the solid-state image sensing device can be improved.
摘要翻译：在固态摄像装置中，以相同的工序形成PMOS区域的第一N型半导体区域和N阱，由此使PMOS区域中的第一N型半导体区域和N阱在N上基本相等型杂质浓度 - 深度剖面。通过在相同的工艺中形成第一N型半导体区域和N阱，可以减少固态图像感测装置的制造工艺的数量。因此，可以在N型杂质的离子注入和扩散期间抑制对固态摄像装置的过热应用。因此，通过抑制由于过度地将热历史应用于固体摄像装置而导致的杂质等的过度扩散，能够提高固体摄像装置的产量。

7. 发明授权

US06843647B2 Electric closing gear 失效
标题翻译：电动关闭装置
公开(公告)号：US06843647B2
公开(公告)日：2005-01-18
申请号：US10239846
申请日：2002-02-04
申请人： Saburo Fujita , Junichi Yamamoto , Tosimichi Sugita
发明人： Saburo Fujita , Junichi Yamamoto , Tosimichi Sugita
IPC分类号： B29C45/17 , B29C45/66 , B29C45/68 , B29C45/64
CPC分类号： B29C45/68 , B29C45/1761 , B29C2045/1788 , B29C2045/1792 , B29C2045/688
摘要： A mechanism for advancing and retreating a movable die plate toward and from a fixed die plate includes a moving base in which the upper surface thereof is connected integrally with the movable die plate and a slide unit is installed on the lower surface thereof. A pair of track rails are provided on the base and form a linear guide by engaging with the slide unit. A ball screw shaft is supported in parallel with the track rails by a bearing provided on the base and has an axial direction restrained rotatably. A servomotor drives the ball screw shaft and a ball screw nut is installed on the lower surface of the moving base to threadedly engage with the ball screw shaft, and the ball screw shaft and the ball screw nut are provided at an arbitrary position between the paired track rails for linear guidance.
摘要翻译：用于使活动模板向固定模板前后移动的机构包括：移动基座，其上表面与可动模板一体连接，滑动单元安装在其下表面。一对轨道设置在基座上并通过与滑动单元接合而形成线性导轨。滚珠丝杠轴通过设置在基座上的轴承与轨道轨道平行地支撑，并且具有可旋转地限制的轴向方向。伺服电机驱动滚珠丝杠轴，滚珠丝杠螺母安装在移动基座的下表面上，与滚珠丝杠轴螺纹接合，滚珠丝杠轴和滚珠丝杠螺母位于配对之间的任意位置轨道用于线性引导。

8. 发明授权

US06650552B2 Switching power supply unit with series connected converter circuits 有权
标题翻译：开关电源单元与串联转换器电路
公开(公告)号：US06650552B2
公开(公告)日：2003-11-18
申请号：US10152788
申请日：2002-05-23
申请人： Masakazu Takagi , Junichi Yamamoto , Katsuhiko Shimizu , Toshiyuki Zaitsu
发明人： Masakazu Takagi , Junichi Yamamoto , Katsuhiko Shimizu , Toshiyuki Zaitsu
IPC分类号： H02M3335
CPC分类号： H02M3/33592 , Y02B70/1475
摘要： A switching power supply unit of the present invention a timing generating circuit (121) which receives a first control signal formed by a rectifier-transistor driving circuit (104), forms a second control signal based on the first control signal, and supplies the second control signal to a control electrode of the rectifier transistor (113). The first control signal is synchronized with the switching operation of a half-bridge circuit (102), and the second control signal exceeds a threshold voltage of a rectifier transistor (113) at a timing substantially equal to the timing that one edge of the first control signal is generated and falls below the threshold voltage of the rectifier transistor (113) at a timing earlier by predetermined time than the timing that the other edge of the first control signal is generated.
摘要翻译：本发明的开关电源单元接收由整流晶体管驱动电路（104）形成的第一控制信号的定时发生电路（121），基于第一控制信号形成第二控制信号，并将第二控制信号控制信号到整流器晶体管（113）的控制电极。第一控制信号与半桥电路（102）的开关操作同步，并且第二控制信号超过整流器晶体管（113）的阈值电压，在与第一控制信号的一个边沿产生并且在比第一控制信号的另一个边沿的定时更早预定时间的时间点下降到整流器晶体管（113）的阈值电压的定时的时间上，被生成。

9. 发明授权

US06388274B1 Epitaxial wafer for infrared light-emitting device and light-emitting device using the same 有权
标题翻译：用于红外发光装置的外延晶片和使用其的发光装置
公开(公告)号：US06388274B1
公开(公告)日：2002-05-14
申请号：US09594735
申请日：2000-06-16
申请人： Atsushi Yoshinaga , Junichi Yamamoto , Akihiro Kitazaki
发明人： Atsushi Yoshinaga , Junichi Yamamoto , Akihiro Kitazaki
IPC分类号： H01L2715
CPC分类号： H01L33/30 , H01L33/0079 , H01L33/305
摘要： The present invention provides an epitaxial wafer which is obtained by sequentially forming, on an n-type GaAs substrate, a first n-type GaAlAs layer; a second n-type GaAlAs layer; an n-type GaAlAs cladding layer; a p-type GaAlAs active layer which has an emission wavelength of 850-900 nm; and a p-type GaAlAs cladding layer, through liquid phase epitaxy, and, subsequently, removing the n-type GaAs substrate. In the epitaxial wafer, the p-type GaAlAs cladding layer has a thickness of 5-30 &mgr;m; the p-type GaAlAs cladding layer has an oxygen concentration of 3×1016 atoms/cm3 or less; the p-type GaAlAs cladding layer has a carrier concentration of 1×1017 cm−3 to 1×1018 cm−3; the p-type GaAlAs active layer has a thickness of 0.05-0.4 &mgr;m; the peak carbon concentration of the portion in the second n-type GaAlAs layer within 2 &mgr;m of the interface between the second n-type GaAlAs layer and the first n-type GaAlAs layer is less than 1×1017 atoms/cm3; the p-type GaAlAs active layer contains germanium as a predominant dopant; the n-type GaAlAs cladding layer has a Ge concentration of 3×1016 atoms/cm3 or less; and the second n-type GaAlAs layer has a Ge concentration of 3×1016 atoms/cm3 or less. The invention provides an epitaxial wafer of double-hetero structure for producing high-intensity GaAlAs infrared LEDs.
摘要翻译：本发明提供了通过在n型GaAs衬底上依次形成第一n型GaAlAs层而获得的外延晶片; 第二n型GaAlAs层; n型GaAlAs覆层; 具有发射波长850-900nm的p型GaAlAs有源层; 和p型GaAlAs覆层，通过液相外延，随后除去n型GaAs衬底。在外延晶片中，p型GaAlAs覆层的厚度为5-30μm; p型GaAlAs包层的氧浓度为3×1016原子/ cm3以下; p型GaAlAs覆层的载流子浓度为1×10 17 cm -3至1×10 18 cm -3; p型GaAlAs活性层的厚度为0.05-0.4μm; 在第二n型GaAlAs层和第一n型GaAlAs层之间的界面的2μm内的第二n型GaAlAs层中的部分的峰值碳浓度小于1×10 17原子/ cm 3; p型GaAlAs活性层含有锗作为主要掺杂剂; n型GaAlAs覆盖层的Ge浓度为3×1016原子/ cm3以下，第二n型GaAlAs层的Ge浓度为3×1016原子/ cm3以下。本发明提供了一种用于生产高强度GaAlAs红外LED的双异质结构的外延晶片。

10. 发明授权

US06348703B1 Epitaxial wafer for infrared light-emitting device and light-emitting device using the same 有权
标题翻译：用于红外发光装置的外延晶片和使用其的发光装置
公开(公告)号：US06348703B1
公开(公告)日：2002-02-19
申请号：US09559263
申请日：2000-04-27
申请人： Atsushi Yoshinaga , Junichi Yamamoto
发明人： Atsushi Yoshinaga , Junichi Yamamoto
IPC分类号： H01L31072
CPC分类号： H01L33/30 , H01L33/305 , Y10S438/93
摘要： The present invention provides an epitaxial wafer comprising, on a p-type GaAs single-crystal substrate, a first p-type layer; a p-type cladding layer; a p-type active layer; and an n-type cladding layer, wherein the n-type cladding layer has a carrier concentration of 1×1017 to 1×1018 cm−3; a sulfur concentration of 3×1016 atoms/cm3 or less; and a thickness of 20-50 &mgr;m. The maximum silicon concentration in the portion of the p-type cladding layer within 2 &mgr;m of the interface between the p-type cladding layer and the first p-type layer is less than 1×1018 atoms/cm3; the concentration of carbon, sulfur, or oxygen in the first p-type layer is less than 1×1017 atoms/cm3; the p-type cladding layer has a thickness of 50-80 &mgr;m; the first p-type layer has a carrier concentration of 3×1017 to 1×1018 cm−3; and the n-type cladding layer contains germanium at a concentration of 3×1018 cm−3 or less. Thus, there can be produced an epitaxial wafer for fabricating an infrared LED exhibiting high emitted-light intensity with small variation.
摘要翻译：本发明提供一种外延晶片，其在p型GaAs单晶衬底上包括第一p型层; p型覆层; p型活性层; n型包覆层，其中，所述n型包覆层的载流子浓度为1×10 17〜1×10 18 cm -3; 3×1016原子/ cm3以下的硫浓度; 厚度为20-50μm。 p型包覆层和第一p型层之间的界面的2μm内的p型包层的部分中的最大硅浓度小于1×1018原子/ cm3; 第一p型层中的碳，硫或氧的浓度小于1×10 17 atoms / cm 3; p型覆层的厚度为50〜80μm; 第一p型层的载流子浓度为3×10 17〜1×10 18 cm -3; n型包覆层含有浓度为3×10 18 cm -3以下的锗。因此，可以制造用于制造具有较小变化的高发射光强度的红外LED的外延晶片。

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