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1. 发明授权

US06323098B1 Manufacturing method of a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06323098B1
公开(公告)日：2001-11-27
申请号：US09261159
申请日：1999-03-03
申请人： Tamotsu Ogata , Junichi Tsuchimoto , Yutaka Inaba , Kiyoshi Mori
发明人： Tamotsu Ogata , Junichi Tsuchimoto , Yutaka Inaba , Kiyoshi Mori
IPC分类号： H01L2120
CPC分类号： H01L28/40 , H01L21/3144 , H01L21/31662
摘要： After a bottom electrode 30 of a capacitor is formed, a nitride film as an insulating film 32 of the capacitor is formed on the bottom electrode 30 by CVD. Then, the insulating film 32 is wet-oxidized at a temperature in a range of 700° C. to 760° C. Finally, a top electrode 34 of the capacitor is formed on the insulating film 32. The insulating film 32 forming step includes a substep of increasing the temperature of a silicon wafer to a CVD reaction temperature in an ammonia atmosphere.
摘要翻译：在形成电容器的底部电极30之后，通过CVD在底部电极30上形成作为电容器的绝缘膜32的氮化物膜。然后，绝缘膜32在700℃至760℃的温度范围内进行湿式氧化。最后，在绝缘膜32上形成电容器的顶部电极34.绝缘膜32形成步骤包括在氨气氛中将硅晶片的温度升高到CVD反应温度的子步骤。

2. 发明授权

US6159785A Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US6159785A
公开(公告)日：2000-12-12
申请号：US201832
申请日：1998-12-01
申请人： Junichi Tsuchimoto , Yutaka Inaba , Tamotsu Ogata , Kiyoshi Mori
发明人： Junichi Tsuchimoto , Yutaka Inaba , Tamotsu Ogata , Kiyoshi Mori
IPC分类号： H01L27/108 , H01L21/02 , H01L21/20 , H01L21/8242 , H10L21/8234
CPC分类号： H01L28/84 , H01L21/02532 , H01L21/02667 , H01L21/2022 , H01L27/10852
摘要： An amorphous silicon film is formed on an interlayer insulating film to cover an upper surface of the interlayer insulating film, and a side surface and a bottom surface of an opening formed at the interlayer insulating film. Phosphorus ions are implanted into the amorphous silicon film. The phosphorous ions are implanted into the amorphous silicon film located on the upper surface of the interlayer insulating film to prevent crystal grains from growing, and thus a polysilicon film having no hemispherical grains is formed. Accordingly, a semiconductor device having capacitors with respective storage nodes adjacent to each other that are electrically isolated properly is obtained.
摘要翻译：在层间绝缘膜上形成非晶硅膜以覆盖层间绝缘膜的上表面，以及形成在层间绝缘膜上的开口的侧表面和底表面。将磷离子注入到非晶硅膜中。将磷离子注入到位于层间绝缘膜的上表面的非晶硅膜中，以防止晶粒生长，从而形成不具有半球状晶粒的多晶硅膜。因此，获得具有彼此相邻的具有彼此电隔离的各个存储节点的电容器的半导体器件。

3. 发明授权

US06207527B1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06207527B1
公开(公告)日：2001-03-27
申请号：US09335690
申请日：1999-06-18
申请人： Kiyoshi Mori , Junichi Tsuchimoto , Yutaka Inaba , Tamotsu Ogata
发明人： Kiyoshi Mori , Junichi Tsuchimoto , Yutaka Inaba , Tamotsu Ogata
IPC分类号： H01L2120
CPC分类号： H01L28/82 , H01L28/84 , H01L28/90
摘要： A method of manufacturing a semiconductor device including a capacitor having an increased capacity with improved yield is provided. Ions are implanted at an incidence angle of 0° in a dose of 8×1015atom/cm2, at an energy of 20 keV, using a heavy current device and an amorphous silicon film having an upper surface flattened is formed. Only the flattened amorphous silicon film formed on the upper surface of an interlayer oxide film is etched back to form a storage electrode.
摘要翻译：提供一种制造半导体器件的方法，该半导体器件包括具有增加的容量并且具有提高的产量的电容器。使用大电流器件，以20keV的能量以8×10 15原子/ cm 2的剂量以0°的入射角植入离子，形成具有上表面变平的非晶硅膜。只有形成在层间氧化膜的上表面上的扁平状非晶硅膜被回蚀以形成存储电极。

4. 发明授权

US06593611B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06593611B1
公开(公告)日：2003-07-15
申请号：US09478810
申请日：2000-01-07
申请人： Yutaka Inaba , Junichi Tsuchimoto , Kiyoshi Mori , Tamotu Ogata
发明人： Yutaka Inaba , Junichi Tsuchimoto , Kiyoshi Mori , Tamotu Ogata
IPC分类号： H01L27108
CPC分类号： H01L28/75 , H01L28/84 , H01L28/91
摘要： Improvements are realized in the coverage characteristics of a cell plate electrode with respect to a cylindrical storage node electrode which has a high aspect ratio (height/diameter) and a surface having minute irregularities formed thereon, thereby improving the electrical characteristics and reliability of a semiconductor device. The semiconductor device is manufactured through a step of forming a first cell plate electrode film on a cylindrical storage node electrode, a process of implanting conductive impurities into the first cell plate electrode film, and a process of forming a second cell plate electrode film on the first cell plate electrode film.
摘要翻译：相对于具有高纵横比（高/直径）的圆柱形存储节点电极和在其上形成微小凹凸的表面，在单元板电极的覆盖特性方面实现了改进，从而提高了半导体的电特性和可靠性设备。半导体器件通过在圆筒形存储节点电极上形成第一单元板电极膜，将导电杂质注入到第一单元板极电极膜中的工序和在第二单元板电极膜上形成第二单元板电极膜的工序来制造第一单元板电极膜。

5. 发明授权

US6087694A Semiconductor memory device and fabrication method thereof 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US6087694A
公开(公告)日：2000-07-11
申请号：US92054
申请日：1998-06-05
申请人： Yoshikazu Ohno , Yutaka Inaba , Junichi Tsuchimoto
发明人： Yoshikazu Ohno , Yutaka Inaba , Junichi Tsuchimoto
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/82 , H01L28/84 , H01L28/90
摘要： A capacitor lower electrode is formed so as to be connected to a main surface of a silicon substrate. The capacitor lower electrode includes a plug portion, a bottom wall portion, and a vertical wall portion. An insulation layer for suppressing crystallization of the vertical wall portion is formed between the bottom wall portion and the vertical wall portion. A capacitor upper electrode is formed on the capacitor lower electrode with a capacitor dielectric layer therebetween.
摘要翻译：电容器下电极形成为与硅衬底的主表面连接。电容器下电极包括插头部分，底壁部分和垂直壁部分。在底壁部分和垂直壁部分之间形成用于抑制垂直壁部分的结晶的绝缘层。电容器上电极形成在电容器下电极上，其间具有电容器电介质层。

6. 发明授权

US06734488B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06734488B1
公开(公告)日：2004-05-11
申请号：US09499037
申请日：2000-02-07
申请人： Kazuhiro Aihara , Junichi Tsuchimoto , Yutaka Inaba , Kazutoshi Wakao
发明人： Kazuhiro Aihara , Junichi Tsuchimoto , Yutaka Inaba , Kazutoshi Wakao
IPC分类号： H01L27108
CPC分类号： H01L28/56 , H01L21/31604 , H01L27/10855
摘要： A semiconductor device with a capacitor having a charge retaining capability improved by preventing generation of a leakage current in a capacitor dielectric film, and a manufacturing method of the same are provided. An indium oxide film is formed to continuously cover the upper surfaces of a tungsten film and an interlayer oxide film. A tantalum oxide film is formed to continuously cover the surface of the indium oxide film and a portion of the upper surface of the interlayer oxide film. Another indium oxide film is formed to cover the upper surface of the tantalum oxide film.
摘要翻译：提供一种具有通过防止电容器电介质膜中的漏电流产生而具有电荷保持能力的电容器的半导体器件及其制造方法。形成氧化铟膜，以连续地覆盖钨膜和层间氧化膜的上表面。形成氧化钽膜，以连续地覆盖氧化铟膜的表面和层间氧化膜的上表面的一部分。形成另一氧化铟膜以覆盖氧化钽膜的上表面。

7. 发明申请

US20110121738A1 LIGHT-EMITTING APPARATUS 审中-公开
标题翻译：发光装置
公开(公告)号：US20110121738A1
公开(公告)日：2011-05-26
申请号：US13000001
申请日：2009-06-19
申请人： Fujio Kawano , Masami Iseki , Kohei Nagayama , Nobuhiko Sato , Toshihiko Mimura , Hiroyuki Maru , Yutaka Inaba
发明人： Fujio Kawano , Masami Iseki , Kohei Nagayama , Nobuhiko Sato , Toshihiko Mimura , Hiroyuki Maru , Yutaka Inaba
IPC分类号： H05B37/00
CPC分类号： G09G3/3241 , G09G3/3233 , G09G3/325 , G09G3/3258 , G09G3/3291 , G09G2300/0452 , G09G2300/0819 , G09G2300/0823 , G09G2300/0852 , G09G2300/0861 , G09G2300/0866 , G09G2310/0235 , G09G2310/0259 , G09G2310/066 , G09G2320/043 , H01L27/3202 , H01L27/3209 , H01L27/3244
摘要： A light-emitting apparatus includes a plurality of light-emitting devices which are connected in series and formed by alternately disposing electrodes and organic layers including a light-emitting material, wherein the electrodes include one electrode and another electrode disposed at an anode end and a cathode end of the light-emitting devices, respectively, and an intermediate electrode disposed between two of the organic layers which serves as a cathode of the light-emitting device disposed on a side of the anode end and as an anode of the light-emitting device disposed on a side of the cathode end; the intermediate electrode is connected to a drive circuit having two current output terminals connected in common; the drive circuit receives data signals concerning two of the plurality of light-emitting devices for which the intermediate electrode serves as the anode and the cathode, respectively; and the drive circuit outputs currents which are different in direction from each other from the two current output terminals in response to the received data signals.
摘要翻译：发光装置包括串联连接并通过交替设置电极和包括发光材料的有机层形成的多个发光装置，其中电极包括一个电极和设置在阳极端的另一个电极，分别设置在用作阳极端侧的发光元件的阴极的两个有机层之间的中间电极和作为发光元件的正极的中间电极设置在阴极端的一侧; 中间电极连接到具有共同连接的两个电流输出端的驱动电路; 驱动电路分别接收关于中间电极用作阳极和阴极的多个发光器件中的两个的数据信号; 并且驱动电路响应于所接收的数据信号而输出与两个电流输出端子彼此不同的电流。

8. 发明申请

US20070229428A1 ORGANIC EL DISPLAY APPARATUS AND DRIVING METHOD THEREFOR 失效
标题翻译：有机EL显示装置及其驱动方法
公开(公告)号：US20070229428A1
公开(公告)日：2007-10-04
申请号：US11693931
申请日：2007-03-30
申请人： Katsumi Nakagawa , Somei Kawasaki , Masami Iseki , Yutaka Inaba
发明人： Katsumi Nakagawa , Somei Kawasaki , Masami Iseki , Yutaka Inaba
IPC分类号： G09G3/36
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0861 , G09G2310/0262 , G09G2320/043
摘要： An organic EL display apparatus has a driving circuit. In the driving circuit, the source and drain of a driving transistor and the anode and cathode of an organic EL device are connected in series between voltage sources. A current passes between the source and drain of the driving transistor and between the anode and cathode of the organic EL device in accordance with a voltage between the gate and source of the driving transistor. Consequently, the organic EL device emits light. In order to store the voltage in the capacitor, a constant voltage source is connected to the gate of the driving transistor and the above-described series connection is disconnected at the source of the driving transistor and connected to a signal source. Then, a current signal output from the signal source passes between the source and drain of the driving transistor, and charges are stored in a capacitor in accordance with the current signal.
摘要翻译：有机EL显示装置具有驱动电路。在驱动电路中，驱动晶体管的源极和漏极以及有机EL器件的阳极和阴极串联连接在电压源之间。根据驱动晶体管的栅极和源极之间的电压，电流在驱动晶体管的源极和漏极之间以及有机EL器件的阳极和阴极之间通过。因此，有机EL器件发光。为了将电压存储在电容器中，将恒定电压源连接到驱动晶体管的栅极，并且上述串联连接在驱动晶体管的源极处断开并连接到信号源。然后，从信号源输出的电流信号在驱动晶体管的源极和漏极之间通过，并且根据电流信号将电荷存储在电容器中。

9. 发明授权

US07026774B2 Rotor position determination device of rotating electric machine and control device of rotating electric machine 有权
标题翻译：旋转电机转子位置确定装置及旋转电机控制装置
公开(公告)号：US07026774B2
公开(公告)日：2006-04-11
申请号：US11188674
申请日：2005-07-25
申请人： Yutaka Inaba , Masakatsu Takahashi , Tomohiro Nakagawa
发明人： Yutaka Inaba , Masakatsu Takahashi , Tomohiro Nakagawa
IPC分类号： H02P5/28
CPC分类号： H02P6/185
摘要： A rotor position determination device for determining a position of a rotor of a rotating electric machine relative to m-phase (m is an integer equal to or more than 2) armature coils, the rotating electric machine including a stator having the m-phase armature coils, and the rotor having a magnetic field, includes: transient current energizing means for performing, for each of the m-phase armature coils, a transient current energizing process for temporarily applying a DC voltage to the armature coil of each phase of the rotating electric machine to pass a transient current through the armature coil of each phase; and rotor position determination means for detecting the transient current passed through each of the m-phase armature coils and determining the position of the rotor relative to the m-phase armature coils from the detected transient currents.
摘要翻译：一种用于确定旋转电机的转子相对于m相（m为2以上的整数）的电枢线圈的位置的转子位置确定装置，所述旋转电机包括具有所述m相电枢的定子线圈和具有磁场的转子包括：瞬态电流激励装置，用于对每个所述m相电枢线圈执行用于将DC电压临时施加到所述旋转的每相的电枢线圈的瞬时电流通电处理电机通过每相电枢线圈的瞬态电流; 以及转子位置确定装置，用于检测通过每个m相电枢线圈的瞬态电流，并根据检测到的瞬态电流确定转子相对于m相电枢线圈的位置。

10. 发明授权

US06456349B1 Liquid crystal element and liquid crystal apparatus using the same 失效
标题翻译：液晶元件和使用其的液晶装置
公开(公告)号：US06456349B1
公开(公告)日：2002-09-24
申请号：US08527775
申请日：1995-09-13
申请人： Yukio Hanyu , Yutaka Inaba , Masanobu Asaoka , Osamu Taniguchi , Kenji Shinjo , Toshiharu Uchimi
发明人： Yukio Hanyu , Yutaka Inaba , Masanobu Asaoka , Osamu Taniguchi , Kenji Shinjo , Toshiharu Uchimi
IPC分类号： G02F1141
CPC分类号： G09G3/3629 , G02F1/1416 , G02F2001/133746 , G09G2310/06 , G09G2320/0209
摘要： A ferroelectric liquid crystal element comprises a ferroelectric liquid crystal and a pair of substantially parallel substrates having opposite surfaces between which the ferroelectric liquid crystal is sealed. The substrates are provided with electrodes to which voltages are applied, and are subjected to one axis orientation treatment so as to orient the ferroelectric liquid crystal. The ferroelectric liquid crystal has an orientation state represented by the following condition: &thgr; &thgr;a>{fraction (&thgr;/2)}.
摘要翻译：铁电液晶元件包括铁电液晶和一对具有相对表面的基本平行的基板，铁电液晶被密封在该表面之间。基板设置有施加电压的电极，并进行一个轴取向处理以使铁电液晶取向。铁电液晶具有由以下条件表示的取向状态：其中α是铁电液晶的预倾角，θ是倾斜角，delta是Sm * C层的倾斜角。铁电液晶在取向上表现出至少两个稳定状态。这两个稳定状态的光轴和铁电液晶的倾斜角θ之间的角度θ1/2满足条件θ>θ> {分数（θ/ 2）}。

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