专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100314552A1 ION IMPLANTER 有权
标题翻译：离子植入物
公开(公告)号：US20100314552A1
公开(公告)日：2010-12-16
申请号：US12547195
申请日：2009-08-25
申请人： Junichi Tatemichi , Masatoshi Onoda , Kohichi Orihira
发明人： Junichi Tatemichi , Masatoshi Onoda , Kohichi Orihira
IPC分类号： C23C14/50
CPC分类号： H01L21/67213 , H01J37/20 , H01J2237/2007 , H01J2237/201 , H01J2237/204 , H01J2237/31701 , H01L21/68764 , H01L21/68771
摘要： An ion implanter includes an implantation chamber into which an ion beam is introduced, a holder for holding substrates on two columns of a first column and a second column in an X-direction, and a holder driving unit having a function of setting the holder in a horizontal state and then positioning the holder in a substrate exchange position and a function of setting the holder in a standing state and then driving reciprocally and linearly the holder along the X-direction in an irradiation area of the ion beam. Also, the ion implanter includes two load lock mechanisms, and two substrate carrying units equipped with arms, which carry the substrates between the load lock mechanisms and a substrate exchange position respectively, every two arms.
摘要翻译：离子注入机包括：入射离子束的注入室，用于将基板保持在X方向上的第一列和第二列的两列的保持器，以及具有将所述保持器设置为的功能的保持器驱动单元水平状态，然后将保持器定位在基板更换位置中，并且具有将支架设置在立起状态，然后在离子束的照射区域沿X方向往复并直线地驱动保持器的功能。此外，离子注入机还包括两个装载锁定机构，以及两个装有臂的基板承载单元，每个臂分别在两个载荷锁定机构和基板更换位置之间承载基板。

2. 发明授权

US08143595B2 Ion implanter 有权
标题翻译：离子注入机
公开(公告)号：US08143595B2
公开(公告)日：2012-03-27
申请号：US12547195
申请日：2009-08-25
申请人： Junichi Tatemichi , Masatoshi Onoda , Kohichi Orihira
发明人： Junichi Tatemichi , Masatoshi Onoda , Kohichi Orihira
IPC分类号： C23C14/50
CPC分类号： H01L21/67213 , H01J37/20 , H01J2237/2007 , H01J2237/201 , H01J2237/204 , H01J2237/31701 , H01L21/68764 , H01L21/68771
摘要： An ion implanter includes an implantation chamber into which an ion beam is introduced, a holder for holding substrates on two columns of a first column and a second column in an X-direction, and a holder driving unit having a function of setting the holder in a horizontal state and then positioning the holder in a substrate exchange position and a function of setting the holder in a standing state and then driving reciprocally and linearly the holder along the X-direction in an irradiation area of the ion beam. Also, the ion implanter includes two load lock mechanisms, and two substrate carrying units equipped with arms, which carry the substrates between the load lock mechanisms and a substrate exchange position respectively, every two arms.
摘要翻译：离子注入机包括：入射离子束的注入室，用于将基板保持在X方向上的第一列和第二列的两列的保持器，以及具有将所述保持器设置为的功能的保持器驱动单元水平状态，然后将保持器定位在基板更换位置中，并且具有将支架设置在立起状态，然后在离子束的照射区域沿X方向往复并直线地驱动保持器的功能。此外，离子注入机还包括两个装载锁定机构，以及两个装有臂的基板承载单元，每个臂分别在两个载荷锁定机构和基板更换位置之间承载基板。

3. 发明授权

US6092485A Apparatus and method for processing substrate 失效
标题翻译：基板处理装置及方法
公开(公告)号：US6092485A
公开(公告)日：2000-07-25
申请号：US959521
申请日：1997-10-28
申请人： Yasunori Ando , Masatoshi Onoda
发明人： Yasunori Ando , Masatoshi Onoda
IPC分类号： H01J37/20 , B65G49/07 , C23C14/56 , H01J37/317 , H01L21/00 , H01L21/265 , H01L21/677 , H01L21/68
CPC分类号： H01L21/67213 , H01L21/67742 , H01L21/67754
摘要： A substrate processing apparatus includes a processing chamber and a vacuum spare chamber adjacent thereto through a vacuum valve. The processing chamber houses two holders for holding substrates on their surfaces on the same side. The processing chamber is provided with an ion source for irradiating the substrate on each holder having reached a processing position P with an ion beam so that it is subjected to ion implantation. The processing chamber is internally provided with a holder moving mechanism for performing the operation of moving the two holders in parallel independently from each other so that they traverse the processing position P, and moving the two holders in parallel simultaneously between the insides of the processing chamber and vacuum spare chamber through the vacuum valve. The vacuum spare chamber is internally provided with a substrate replacing mechanism for replacing processed substrates and non-processed substrates with each other collectively for the two holders in cooperation with the holder moving mechanism.
摘要翻译：基板处理装置包括通过真空阀与其相邻的处理室和真空备用室。处理室容纳两个保持器，用于在同一侧的表面上保持基板。处理室设置有离子源，用于利用离子束将具有到达处理位置P的每个保持器上的基板照射，使其经受离子注入。处理室内部设置有保持器移动机构，用于执行使两个保持器彼此平行地移动的操作，使得它们穿过处理位置P，并且在处理室的内部之间同时移动两个保持器和真空备用室通过真空阀。真空备用室内部设置有基板更换机构，用于与保持器移动机构协作，将处理后的基板和未处理基板彼此共同地替换为两个保持件。

4. 发明申请

US20060283041A1 Vacuum processing apparatus and method operation thereof 失效
标题翻译：真空处理装置及其方法操作
公开(公告)号：US20060283041A1
公开(公告)日：2006-12-21
申请号：US11454875
申请日：2006-06-19
申请人： Yasunori Ando , Masatoshi Onoda
发明人： Yasunori Ando , Masatoshi Onoda
IPC分类号： F26B5/04
CPC分类号： F26B25/008 , F26B5/04 , Y10S414/139
摘要： This vacuum processing apparatus has a fixed processing chamber 24 and two movable load lock chambers 28a and 28b. A gate valve 26 is provided on the processing chamber 24, and gate valves 30 are respectively provided on the load lock chambers 28a and 28b. Each of the load lock chambers 28a and 28b is moved in a Y direction by a preparatory chamber moving mechanism 34. A vacuum seal 54, which is expandable and shrinkable so as to vacuum seal a gap G between the gate valves 26 and 30 which are set close to each other during the expansion, is provided around a peripheral edge portion of the processing chamber gate valve 26. Further, a substrate transporting mechanism for transporting a substrate 2 between the processing chamber 24 and each of the load lock chambers 28a and 28b set close thereto.
摘要翻译：该真空处理装置具有固定的处理室24和两个可移动的装载锁定室28a和28b。闸阀26设置在处理室24上，闸阀30分别设置在负载锁定室28a和28b上。每个装载锁定室28a和28b由预备室移动机构34在Y方向上移动。可膨胀和收缩以便真空密封闸阀26和30之间的间隙G的真空密封件54 在处理室闸阀26的周缘部周围设置有膨胀时彼此靠近设置的基板输送机构。另外，基板输送机构用于在处理室24和各负载锁定室28之间输送基板2 a和28 b附近。

5. 发明授权

US07849814B2 Plasma generating device 有权
标题翻译：等离子体发生装置
公开(公告)号：US07849814B2
公开(公告)日：2010-12-14
申请号：US11519133
申请日：2006-09-12
申请人： Masatoshi Onoda , Eiji Takahashi
发明人： Masatoshi Onoda , Eiji Takahashi
IPC分类号： H01L21/00
CPC分类号： C23C16/509 , C23C16/24 , H01J37/32082
摘要： A plasma generating device provided with a plasma generating chamber (10) and a high-frequency antenna (1) arranged in the chamber (10) for generating inductively coupled plasma by applying a high-frequency power to a gas in the chamber (10) from the antenna (1). The antenna (1) is a low-inductance antenna formed of a first portion (11) extending from the outside of the chamber (10) into the chamber (10), and a plurality of second portions (12) diverging from an inner end (11e) of the first portion (11) in an electrically parallel fashion, and having a termination (12e) directly connected to the inner wall of the grounded chamber (10). The surface of the antenna (1) is coated with an electrically insulating material. Frequency of the high-frequency power applied to the antenna may be in a range from 40 MHz to hundreds of megahertz. The plasma generating device can generate desired plasma by suppressing disadvantages such as abnormal discharge, matching failure and others, and can be constructed so that a desired processing such as film deposition can be performed.
摘要翻译：一种等离子体产生装置，其具有设置在室（10）中的等离子体产生室（10）和高频天线（1），用于通过向室（10）中的气体施加高频电力来产生电感耦合等离子体，从天线（1）。天线（1）是由从室（10）的外部延伸到室（10）中的第一部分（11）形成的低电感天线，以及从内部（11e）的第一部分（11e），并且具有直接连接到接地室（10）的内壁的终端（12e）。天线（1）的表面涂覆有电绝缘材料。施加到天线的高频功率的频率可以在40MHz到几百MHz的范围内。等离子体发生装置可以通过抑制诸如异常放电，匹配故障等的缺点来产生期望的等离子体，并且可以构造成可以进行期望的处理，例如膜沉积。

6. 发明授权

US07367139B2 Vacuum processing apparatus and method operation thereof 失效
标题翻译：真空处理装置及其方法操作
公开(公告)号：US07367139B2
公开(公告)日：2008-05-06
申请号：US11454875
申请日：2006-06-19
申请人： Yasunori Ando , Masatoshi Onoda
发明人： Yasunori Ando , Masatoshi Onoda
IPC分类号： F26B5/04 , F26B19/00
CPC分类号： F26B25/008 , F26B5/04 , Y10S414/139
摘要： This vacuum processing apparatus has a fixed processing chamber 24 and two movable load lock chambers 28a and 28b. A gate valve 26 is provided on the processing chamber 24, and gate valves 30 are respectively provided on the load lock chambers 28a and 28b. Each of the load lock chambers 28a and 28b is moved in a Y direction by a preparatory chamber moving mechanism 34. A vacuum seal 54, which is expandable and shrinkable so as to vacuum seal a gap G between the gate valves 26 and 30 which are set close to each other during the expansion, is provided around a peripheral edge portion of the processing chamber gate valve 26. Further, a substrate transporting mechanism for transporting a substrate 2 between the processing chamber 24 and each of the load lock chambers 28a and 28b set close thereto.
摘要翻译：该真空处理装置具有固定的处理室24和两个可移动的装载锁定室28a和28b。闸阀26设置在处理室24上，闸阀30分别设置在负载锁定室28a和28b上。每个装载锁定室28a和28b由预备室移动机构34在Y方向上移动。可膨胀和收缩以便真空密封闸阀26和30之间的间隙G的真空密封件54 在处理室闸阀26的周缘部周围设置有膨胀时彼此靠近设置的基板输送机构。另外，基板输送机构用于在处理室24和各负载锁定室28之间输送基板2 a和28 b附近。

7. 发明申请

US20070266947A1 PLASMA GENERATING DEVICE 有权
标题翻译：等离子体发生装置
公开(公告)号：US20070266947A1
公开(公告)日：2007-11-22
申请号：US11519133
申请日：2006-09-12
申请人： Masatoshi Onoda , Eiji Takahashi
发明人： Masatoshi Onoda , Eiji Takahashi
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： C23C16/509 , C23C16/24 , H01J37/32082
摘要： A plasma generating device provided with a plasma generating chamber (10) and a high-frequency antenna (1) arranged in the chamber (10) for generating inductively coupled plasma by applying a high-frequency power to a gas in the chamber (10) from the antenna (1). The antenna (1) is a low-inductance antenna formed of a first portion (11) extending from the outside of the chamber (10) into the chamber (10), and a plurality of second portions (12) diverging from an inner end (11e) of the first portion (11) in an electrically parallel fashion, and having a termination (12e) directly connected to the inner wall of the grounded chamber (10). The surface of the antenna (1) is coated with an electrically insulating material. Frequency of the high-frequency power applied to the antenna may be in a range from 40 MHz to hundreds of megahertz. The plasma generating device can generate desired plasma by suppressing disadvantages such as abnormal discharge, matching failure and others, and can be constructed so that a desired processing such as film deposition can be performed.
摘要翻译：一种等离子体产生装置，其具有设置在室（10）中的等离子体产生室（10）和高频天线（1），用于通过向室（10）中的气体施加高频电力来产生电感耦合等离子体，从天线（1）。天线（1）是由从腔室（10）的外部延伸到腔室（10）中的第一部分（11）形成的低电感天线，以及从腔室（10）的内侧开始的多个第二部分（11）的电极（11e），并且具有直接连接到接地室（10）的内壁的终端（12e）。天线（1）的表面涂覆有电绝缘材料。施加到天线的高频功率的频率可以在40MHz到几百MHz的范围内。等离子体发生装置可以通过抑制诸如异常放电，匹配故障等的缺点来产生期望的等离子体，并且可以构造成可以进行期望的处理，例如膜沉积。

8. 发明申请

US20070007128A1 Silicon film forming apparatus 审中-公开
标题翻译：硅膜形成装置
公开(公告)号：US20070007128A1
公开(公告)日：2007-01-11
申请号：US11519132
申请日：2006-09-12
申请人： Atsushi Tomyo , Eiji Takahashi , Masaki Fujiwara , Takashi Kotera , Masatoshi Onoda
发明人： Atsushi Tomyo , Eiji Takahashi , Masaki Fujiwara , Takashi Kotera , Masatoshi Onoda
IPC分类号： C23C14/00 , C23C16/00
CPC分类号： H01J37/321 , C23C14/165 , C23C14/3471
摘要： A silicon film forming apparatus includes a deposition chamber (10), a silicon sputter target (2) arranged in the chamber, a hydrogen gas supply circuit (102 or 102′) supplying a hydrogen gas into the chamber, and a high-frequency power applying device (antenna 1, 1′, power source PW and others) generating inductively coupled plasma by applying high-frequency power to the gas supplied into the deposition chamber (10). Chemical sputtering is effected on the target (2) by the plasma to form a silicon film on a substrate S. A silane gas may be used. A silane gas supply circuit (101) may be provided with a gas reservoir unit (GR). The silicon film can be formed inexpensively and fast at a relatively low temperature.
摘要翻译：硅膜形成装置包括沉积室（10），布置在室中的硅溅射靶（2），将氢气供应到室中的氢气供应电路（102或102'）和高频功率通过向供应到沉积室（10）的气体施加高频电力来产生电感耦合等离子体的施加装置（天线1,1'，电源PW等）。通过等离子体在靶（2）上进行化学溅射，以在衬底S上形成硅膜。可以使用硅烷气体。硅烷气体供给回路（101）也可以设置有气体储存部（GR）。硅膜可以在相对较低的温度下廉价且快速地形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式