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1. 发明授权

US08147705B2 Method of operating ion source and ion implanting apparatus 有权
标题翻译：操作离子源和离子注入装置的方法
公开(公告)号：US08147705B2
公开(公告)日：2012-04-03
申请号：US11583040
申请日：2006-10-19
申请人： Yutaka Inouchi , Syojiro Dohi , Yasunori Ando , Yasuhiro Matsuda
发明人： Yutaka Inouchi , Syojiro Dohi , Yasunori Ando , Yasuhiro Matsuda
IPC分类号： C23F1/00 , H01J37/08
CPC分类号： C23C14/48 , H01J37/08 , H01J2237/082
摘要： When an ion beam 4 is to be extracted from an ion source 2 by using a gas containing boron trifluoride as an ion source gas 50 for supplying the gas into a plasma chamber 20 for the ion source 2, a bias voltage VB of a plasma electrode 31 with respect to the plasma chamber 20 for the ion source 2 is set to be positive by a bias circuit 64.
摘要翻译：当通过使用含有三氟化硼的气体作为用于将气体供给到用于离子源2的等离子体室20的离子源气体50从离子源2中提取离子束4时，等离子体电极的偏置电压VB 31相对于离子源2的等离子体室20被偏置电路64设定为正。

2. 发明申请

US20070110649A1 ZEOLITE MEMBRANES FOR SELECTIVE OXIDATION ON CARBON MONOXIDE IN MIXED HYDROGEN GAS SOURCE 有权
标题翻译：用于混合氢气源中一氧化碳选择性氧化的沸石膜
公开(公告)号：US20070110649A1
公开(公告)日：2007-05-17
申请号：US11620441
申请日：2007-01-05
申请人： Katsuki KUSAKABE , Yasuhisa Hasegawa , Shigeharu Morooka , Yasunori Ando
发明人： Katsuki KUSAKABE , Yasuhisa Hasegawa , Shigeharu Morooka , Yasunori Ando
IPC分类号： B01D53/46
CPC分类号： B01D67/0055 , B01D53/228 , B01D53/864 , B01D69/141 , B01D71/028 , B01J19/2475 , B01J29/126 , B01J35/065 , C01B3/503 , C01B3/583 , C01B2203/041 , C01B2203/044 , C01B2203/047 , H01M8/0668 , H01M2250/10 , H01M2250/20 , H01M2250/30 , Y02B90/14 , Y02B90/18 , Y02T90/32 , Y10S55/05
摘要： Methods and apparatus are taught for selectively oxidizing carbon monoxide in a source of gas containing carbon monoxide and hydrogen. A gas containing carbon monoxide and hydrogen is fed into a membrane reactor (10, 50, 60) capable of selectively absorbing the carbon monoxide. Preferably, the reactor comprises a substantially defect-free zeolite membrane (4) having at one metal that acts as an oxidation catalyst. The zeolite membrane (4) may be supported on a porous ceramic support (2, 52, 61) and the average pore diameter is preferably between about 0.3 nm and about 1.0 nm. Moreover, the substantially defect-free zeolite membrane (4) preferably has a thickness between about 0.1 micron and about 50.0 microns. The at least one metal is preferably capable of selectively oxidizing the carbon monoxide and is preferably platinum. Preferably, the temperature of reactor housing is maintained at about 200-300° C.
摘要翻译：教导了用于选择性地氧化含一氧化碳和氢气的气体源中的一氧化碳的方法和装置。含有一氧化碳和氢气的气体被供给到能够选择性吸收一氧化碳的膜反应器（10,50,60）中。优选地，反应器包括基本上无缺陷的沸石膜（4），所述沸石膜具有作为氧化催化剂的一种金属。沸石膜（4）可以负载在多孔陶瓷载体（2,252,61）上，平均孔径优选在约0.3nm至约1.0nm之间。此外，基本上无缺陷的沸石膜（4）的厚度优选为约0.1微米至约50.0微米。所述至少一种金属优选能够选择性地氧化一氧化碳，并且优选为铂。优选地，反应器壳体的温度保持在约200-300℃

3. 发明申请

US20070089833A1 Method of operating ion source and ion implanting apparatus 有权
标题翻译：操作离子源和离子注入装置的方法
公开(公告)号：US20070089833A1
公开(公告)日：2007-04-26
申请号：US11583040
申请日：2006-10-19
申请人： Yutaka Inouchi , Syojiro Dohi , Yasunori Ando , Yasuhiro Matsuda
发明人： Yutaka Inouchi , Syojiro Dohi , Yasunori Ando , Yasuhiro Matsuda
IPC分类号： C23F1/00
CPC分类号： C23C14/48 , H01J37/08 , H01J2237/082
摘要： When an ion beam 4 is to be extracted from an ion source 2 by using a gas containing boron trifluoride as an ion source gas 50 for supplying the gas into a plasma chamber 20 for the ion source 2, a bias voltage VB of a plasma electrode 31 with respect to the plasma chamber 20 for the ion source 2 is set to be positive by a bias circuit 64.
摘要翻译：当通过使用含有三氟化硼的气体作为用于将气体供给到用于离子源2的等离子体室20中的离子源气体50从离子源2中提取离子束4时，偏置电压V B 相对于离子源2的等离子体室20，等离子体电极31的被偏置电路64设定为正。

4. 发明申请

US20050253089A1 Ion implanting apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US20050253089A1
公开(公告)日：2005-11-17
申请号：US10845209
申请日：2004-05-14
申请人： Syuichi Maeno , Masao Naito , Yasunori Ando , Hilton Glavish
发明人： Syuichi Maeno , Masao Naito , Yasunori Ando , Hilton Glavish
IPC分类号： H01J37/317 , G01N21/00 , H01L21/265
CPC分类号： H01J37/3171 , H01J2237/0455 , H01J2237/057 , H01J2237/1502 , H01J2237/20228 , H01J2237/24528 , H01J2237/24542 , H01L21/26513 , H01L21/2658
摘要： The ion implanting apparatus according to this invention includes: an ion source for producing the ion beam 20 including desired ion species and being shaped in a sheet with a width longer than a narrow width of a substrate 82, a mass separating magnet 36 for selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slit 72 for selectively making the desired ion species pass through by cooperating with the mass separating magnet 36, and a substrate drive device 86 for reciprocatedly driving the substrate 82 in a direction substantially perpendicular to the sheet face 20s of the ion beam 20 within an irradiating area of the ion beam 20 which has passed through a separating slit 72.
摘要翻译：根据本发明的离子注入装置包括：用于产生包括所需离子种类的离子束20的离子源，并且成形为具有比衬底82的窄宽度更长的宽度的片材;质量分离磁体36，用于选择性地导出通过在与其表面垂直的方向上弯曲离子束来形成期望的离子种类，通过与质量分离磁体36配合选择性地使期望的离子种类通过的分离狭缝72和用于往复驱动的衬底驱动装置86 基板82在离开光束20的已经通过分离狭缝72的照射区域内与离子束20的片表面20s基本垂直的方向。

5. 发明申请

US20050211626A1 Methods for making microporous ceramic materials 失效
公开(公告)号：US20050211626A1
公开(公告)日：2005-09-29
申请号：US11115190
申请日：2005-04-27
申请人： Balagopal Nair , Yasunori Ando , Hisatomi Taguchi , Shigeo Nagaya , Kiyoshi Komura
发明人： Balagopal Nair , Yasunori Ando , Hisatomi Taguchi , Shigeo Nagaya , Kiyoshi Komura
IPC分类号： C04B38/00 , B01D71/02 , C01B3/50 , C01B21/068 , C04B35/589 , B01D29/00 , B01D39/00
CPC分类号： C04B38/0022 , B01D39/2093 , B01D67/0046 , B01D71/02 , B01D2323/08 , C01B3/503 , C01B2203/0227 , C01B2203/041 , C01B2203/0465 , C04B35/584 , C04B35/589 , C04B35/6264 , C04B35/62655 , C04B35/6267 , C04B35/6268 , C04B2111/00793 , C04B2235/3217 , C04B2235/3225 , C04B2235/3873 , C04B2235/465 , C04B2235/5409 , C04B2235/668 , C04B2235/94 , Y10T428/249969 , C04B38/0054 , C04B41/4582
摘要： The present invention provides a method for making a microporous ceramic material and includes the steps of (a) preparing a starting material for firing comprising a nonoxide ceramic precursor containing silicon as an essential component; (b) heating the starting material for firing in an atmosphere containing at least 1 mol % of hydrogen so as to form microporous ceramic product; and (c) cooling the microporous ceramic product.

6. 发明授权

US6092485A Apparatus and method for processing substrate 失效
标题翻译：基板处理装置及方法
公开(公告)号：US6092485A
公开(公告)日：2000-07-25
申请号：US959521
申请日：1997-10-28
申请人： Yasunori Ando , Masatoshi Onoda
发明人： Yasunori Ando , Masatoshi Onoda
IPC分类号： H01J37/20 , B65G49/07 , C23C14/56 , H01J37/317 , H01L21/00 , H01L21/265 , H01L21/677 , H01L21/68
CPC分类号： H01L21/67213 , H01L21/67742 , H01L21/67754
摘要： A substrate processing apparatus includes a processing chamber and a vacuum spare chamber adjacent thereto through a vacuum valve. The processing chamber houses two holders for holding substrates on their surfaces on the same side. The processing chamber is provided with an ion source for irradiating the substrate on each holder having reached a processing position P with an ion beam so that it is subjected to ion implantation. The processing chamber is internally provided with a holder moving mechanism for performing the operation of moving the two holders in parallel independently from each other so that they traverse the processing position P, and moving the two holders in parallel simultaneously between the insides of the processing chamber and vacuum spare chamber through the vacuum valve. The vacuum spare chamber is internally provided with a substrate replacing mechanism for replacing processed substrates and non-processed substrates with each other collectively for the two holders in cooperation with the holder moving mechanism.
摘要翻译：基板处理装置包括通过真空阀与其相邻的处理室和真空备用室。处理室容纳两个保持器，用于在同一侧的表面上保持基板。处理室设置有离子源，用于利用离子束将具有到达处理位置P的每个保持器上的基板照射，使其经受离子注入。处理室内部设置有保持器移动机构，用于执行使两个保持器彼此平行地移动的操作，使得它们穿过处理位置P，并且在处理室的内部之间同时移动两个保持器和真空备用室通过真空阀。真空备用室内部设置有基板更换机构，用于与保持器移动机构协作，将处理后的基板和未处理基板彼此共同地替换为两个保持件。

7. 发明授权

US4875284A Process for producing a package for packing semiconductor devices 失效
标题翻译：用于制造用于包装半导体器件的封装的方法
公开(公告)号：US4875284A
公开(公告)日：1989-10-24
申请号：US168056
申请日：1988-03-14
申请人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo , Noriaki Matsumura
发明人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo , Noriaki Matsumura
IPC分类号： H01L21/48 , H01L23/057 , H01L23/14
CPC分类号： H01L21/481 , H01L23/057 , H01L23/142 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/01079 , H01L2924/01322 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/16152 , H01L2924/16195 , Y10T29/49126 , Y10T29/49155
摘要： In a package comprising a chip mounting base and a cap to be fitted on the base, the base comprises a metal substrate, an electrically insulating ceramic layer formed on the metal substrate, a patterned metal layer formed on the ceramic layer in a selected area thereof, a first mixed layer formed in an area near the interface between the metal substrate and the ceramic layer, and a second mixed layer formed in an area near the interface between the ceramic layer and the metal layer, and the cap comprises a metal substrate, an electrically insulating ceramic layer formed in at least the marginal portion of the side of the metal substrate which faces the base, and a mixed layer that is formed in an area near the interface between the metal substrate and the ceramic layer.
摘要翻译：在包括芯片安装基座和安装在基座上的盖子的封装中，基座包括金属基板，形成在金属基板上的电绝缘陶瓷层，在其选定区域中形成在陶瓷层上的图案化金属层形成在金属基板和陶瓷层之间的界面附近的区域中的第一混合层，以及形成在陶瓷层和金属层之间的界面附近的区域的第二混合层，并且该盖包括金属基板，至少形成在金属基板的与基板相对的一侧的边缘部分中的电绝缘陶瓷层，以及形成在金属基板和陶瓷层之间的界面附近的区域中的混合层。

8. 发明授权

US4622919A Film forming apparatus 失效
标题翻译：成膜装置
公开(公告)号：US4622919A
公开(公告)日：1986-11-18
申请号：US653685
申请日：1984-09-21
申请人： Yasuo Suzuki , Yasunori Ando
发明人： Yasuo Suzuki , Yasunori Ando
IPC分类号： C23C14/22 , C23C14/32 , C23C14/48 , C23C14/56 , C23C14/00
CPC分类号： C23C14/562 , C23C14/22 , C23C14/32 , C23C14/48 , C23C14/568
摘要： A process and an apparatus for forming films, up to several microns in thickness, on substrates by the combination of ion implantation and vapor deposition; said apparatus comprising a vacuum chamber, means for transporting a substrate within the vacuum chamber, a first ion source having an accelerating voltage of 500 V to 5 kV and disposed at a first position along the direction of movement of the substrate within the vacuum chamber, a first evaporator disposed at a second position along the direction of movement of the substrate within the vacuum chamber, and a second ion source having an accelerating voltage of 10 kV to 100 kV and disposed at a third position along the direction of movement of the substrate within the vacuum chamber, and optionally further comprising a second evaporator disposed at a fourth position along the direction of movement of the substrate within the vacuum chamber, which may be provided with high-frequency exciting means disposed in a path of release of vapor from the second evaporator toward the substrate for ionizing the vapor, and means for forming an electric field for accelerating the ionized vapor toward the substrate.
摘要翻译：一种用于通过离子注入和气相沉积的组合在衬底上形成多达几微米厚度的膜的方法和装置; 所述装置包括真空室，用于在真空室内输送基板的装置，具有500V至5kV的加速电压的第一离子源，并且设置在沿真空室内的基板运动方向的第一位置，设置在所述真空室内的所述基板的移动方向的第二位置的第一蒸发器和具有10kV〜100kV的加速电压的第二离子源，并且配置在沿着所述基板的移动方向的第三位置并且可选地还包括设置在沿着真空室内的衬底的移动方向的第四位置的第二蒸发器，该第二蒸发器可以设置有高频激励装置，该高频激励装置设置在从朝向基板离子化蒸气的第二蒸发器，以及用于形成用于将离子化蒸气加速的电场的装置底物。

9. 发明申请

US20130181291A1 SILICON OXYNITRIDE FILM AND METHOD FOR FORMING SAME, AND SEMICONDUCTOR DEVICE 有权
标题翻译：硅氧烷膜及其形成方法和半导体器件
公开(公告)号：US20130181291A1
公开(公告)日：2013-07-18
申请号：US13823108
申请日：2010-12-08
申请人： Yasunori Ando , Eiji Takahashi , Masaki Fujiwara
发明人： Yasunori Ando , Eiji Takahashi , Masaki Fujiwara
IPC分类号： H01L21/02 , H01L29/786
CPC分类号： H01L21/0214 , C23C16/30 , C23C16/308 , H01L21/02274 , H01L29/4908 , H01L29/786 , H01L29/78606 , H01L29/7869
摘要： An insulating film that does not contain hydrogen or free fluorine and has good film properties is provided. A silicon oxynitride film includes silicon, nitrogen, oxygen, and fluorine, wherein the elemental percentage (N+O+F)/Si of the total (N+O+F) of nitrogen (N), oxygen (0), and fluorine (F) to silicon (Si) is in a range of 1.93 to 1.48, and in the silicon oxynitride film, an elemental percentage of silicon ranges from 0.34 to 0.41, an elemental percentage of nitrogen ranges from 0.10 to 0.22, an elemental percentage of oxygen ranges from 0.14 to 0.38, and an elemental percentage of fluorine ranges from 0.17 to 0.24. The film can be formed on a substrate by inductive coupling type plasma CVD whereby a plasma is generated by inductive coupling using a silicon tetrafluoride gas, a nitrogen gas, and an oxygen gas as a material gas.
摘要翻译：提供不含氢或游离氟并具有良好膜性能的绝缘膜。氧氮化硅膜包括硅，氮，氧和氟，其中氮（N），氧（0）和氟（N）的总（N + O + F）的总元素（N + O + F）/ Si （F）与硅（Si）的比例在1.93〜1.48的范围内，氮氧化硅膜的元素百分比为0.34〜0.41，氮的元素百分比为0.10〜0.22，元素的比例氧的范围为0.14〜0.38，氟的元素百分比为0.17〜0.24。可以通过感应耦合型等离子体CVD在基板上形成膜，由此通过使用四氟化硅气体，氮气和氧气作为原料气体的感应耦合产生等离子体。

10. 发明授权

US08394232B1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US08394232B1
公开(公告)日：2013-03-12
申请号：US13592346
申请日：2012-08-23
申请人： Yasunori Ando
发明人： Yasunori Ando
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/3211 , C23C16/402 , C23C16/507
摘要： The plasma processing including an antenna which is substantially straight in a plan view of the antenna is provided. The antenna includes two rectangular conductor plates disposed on a same plane along a surface of a substrate in a manner that the two rectangular conductor plates are parallel to each other with an interval therebetween. An end of a side in a longitudinal direction of each of the two rectangular conductor plates is connected through a conductor so as to form a go-and-return conductor, wherein the high frequency current flows in the two rectangular conductor plates in opposite directions. Notches are formed at the sides of the two rectangular conductor plates adjacent to the interval and the notches facing each other define an opening. The notches form the openings. The openings are separately arranged in the longitudinal direction of the antenna.
摘要翻译：提供包括在天线的平面图中基本上是直的天线的等离子体处理。天线包括沿着基板的表面设置在同一平面上的两个矩形导体板，使得两个矩形导体板之间具有间隔彼此平行。两个矩形导体板中的每一个的纵向方向上的一端通过导体连接，以便形成回流导体，其中高频电流在两个矩形导体板中以相反的方向流动。在与间隔相邻的两个矩形导体板的侧面形成有凹口，并且彼此面对的凹口限定开口。凹口形成开口。开口沿天线的纵向分开设置。

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