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1. 发明授权

US5324554A Core for photographic light-sensitive material 失效
标题翻译：摄影感光材料的核心
公开(公告)号：US5324554A
公开(公告)日：1994-06-28
申请号：US928035
申请日：1992-08-11
申请人： Junichi Tamura , Yuichi Machida , Chikara Amano
发明人： Junichi Tamura , Yuichi Machida , Chikara Amano
IPC分类号： B65H75/10 , G03C3/00
CPC分类号： B65H75/10 , Y10T428/24992 , Y10T428/31982
摘要： A core for photographic light-sensitive material use made of wooden source material which can be recycled or decomposed in natural environment is disclosed. The core center is made of paper covered with a buffer layer made of 100% wooden pulp having a density of not more than 0.1 g/cm.sup.3. The buffer layer is covered with a reinforcing sheet made of paper with a tensile strength of 0.3 kg/15 mm width or more.
摘要翻译：公开了一种用于在自然环境中回收或分解的木源材料制成的照相感光材料的核心。核心中心由纸覆盖有由100％木浆制成的缓冲层，密度不超过0.1g / cm 3。缓冲层用拉伸强度为0.3kg / 15mm以上的纸张加强片覆盖。

2. 发明授权

US06766082B2 Waveguide-type optical device and manufacturing method therefor 失效
标题翻译：波导型光学器件及其制造方法
公开(公告)号：US06766082B2
公开(公告)日：2004-07-20
申请号：US10072031
申请日：2002-02-08
申请人： Katsuhiko Hirabayashi , Chikara Amano
发明人： Katsuhiko Hirabayashi , Chikara Amano
IPC分类号： G02B0630
CPC分类号： G02F1/1326 , G02B6/266 , G02B6/4201 , G02B6/423 , G02F1/0136 , G02F1/0551 , G02F1/1334 , G02F1/133784
摘要： A technique for electrically mounting a surface-normal optical device or material on a waveguide-type optical device while the characteristics of the mounted device are effectively used is disclosed. The waveguide-type optical device comprises a substrate on which optical waveguides or fibers are provided and a trench is formed; a pair of electrodes which is assigned to each optical waveguide or fiber and is formed from the surface of the substrate to wall surfaces of the trench; and a material or device which is filled or inserted into the trench, and which has an electro-optic effect, thermo-optic effect, light emitting function, light receiving function, or light modulating function. Another type of device comprises a thin and surface-normal active optical device driven by an applied voltage, which is substantially vertically inserted into the trench and is fixed in the trench; and a support member attached to the inserted device.
摘要翻译：公开了一种用于将表面常规光学器件或材料电气安装在波导型光学器件上的技术，同时有效地使用安装器件的特性。波导型光学器件包括其上设置光波导或光纤并形成沟槽的衬底; 一对电极被分配给每个光波导或光纤，并且从基板的表面形成到沟槽的壁表面; 以及填充或插入沟槽中并且具有电光效应，热光效应，发光功能，光接收功能或光调制功能的材料或装置。另一种类型的器件包括由施加的电压驱动的薄且表面正常的有源光学器件，其基本上垂直地插入到沟槽中并固定在沟槽中; 以及附接到插入装置的支撑构件。

3. 发明授权

US08102888B2 Semiconductor laser device and driving method of the same 失效
标题翻译：半导体激光器件及其驱动方法相同
公开(公告)号：US08102888B2
公开(公告)日：2012-01-24
申请号：US12442726
申请日：2007-08-29
申请人： Nobuyuki Kondo , Chikara Amano
发明人： Nobuyuki Kondo , Chikara Amano
IPC分类号： H01S3/04
CPC分类号： H01S5/0612 , H01S5/02415 , H01S5/02446 , H01S5/065 , H01S5/0652 , H01S5/06812 , H01S5/0683 , H01S5/141 , H01S5/146 , H01S2301/16
摘要： A semiconductor laser device according to the present invention outputs light while periodically varying the temperature of a semiconductor laser, an optical waveguide, or a diffraction grating, outputs light while causing the optical waveguide or the diffraction grating to mechanically and periodically vary, or causes return light, which varies periodically or non-periodically, to be incident on the semiconductor laser. Since the periodical fluctuation is applied to the temperature of the semiconductor laser, the optical waveguide, or diffraction grating, the periodical mechanical variation is applied to the optical waveguide or the diffraction grating, or the return light is caused to be incident on the semiconductor laser, the semiconductor laser carries out a multimode oscillation from a low output to a high output without shifting between a single mode oscillation and a multimode oscillation. Accordingly, the present invention can provide a semiconductor laser device having IL characteristics in which a current is proportional to a light output and a driving method thereof.
摘要翻译：根据本发明的半导体激光器件在周期性地改变半导体激光器，光波导或衍射光栅的温度的同时输出光，同时使光波导或衍射光栅机械地和周期性地变化，或者导致返回其周期性地或非周期地变化地入射到半导体激光器上。由于周期性波动被应用于半导体激光器，光波导或衍射光栅的温度，所以周期性机械变化被施加到光波导或衍射光栅，或者返回光入射到半导体激光器，半导体激光器从低输出到高输出执行多模振荡，而不会在单模振荡和多模振荡之间移位。因此，本发明可以提供具有IL特性的半导体激光器件，其中电流与光输出成比例，其驱动方法。

4. 发明授权

US06846685B2 Vertical-cavity surface-emitting semiconductor laser 失效
标题翻译：垂直腔表面发射半导体激光器
公开(公告)号：US06846685B2
公开(公告)日：2005-01-25
申请号：US10372410
申请日：2003-02-25
申请人： Hiroyuki Uenohara , Kouta Tateno , Toshiaki Kagawa , Osamu Tadanaga , Chikara Amano , Takashi Kurokawa
发明人： Hiroyuki Uenohara , Kouta Tateno , Toshiaki Kagawa , Osamu Tadanaga , Chikara Amano , Takashi Kurokawa
IPC分类号： H01S5/183 , H01S5/227 , H01L21/00
CPC分类号： H01S5/18308 , H01S5/18347 , H01S5/209 , H01S5/222 , H01S5/2222 , H01S5/2224 , H01S2301/166
摘要： A vertical-cavity surface-emitting semiconductor laser has a substrate, a lower DBR structure portion having a plurality of layers provided on the substrate, a semiconductor buried structure portion provided over the lower DBR structure portion having at least one layer with buried therein an active layer, and an upper DBR structure portion having a plurality of layers provided over the semiconductor buried structure portion including the active layer. The active layer, at least one layer arranged over the active layer and at least one layer arranged beneath the active layer constitute an optical resonator region and each of the layers constituting the optical resonator region has an effective refractive index higher than respective effective refractive indices of other layers in the upper and lower DBR structure portions and a refractive index of the at least one layer constituting the semiconductor buried structure portion.
摘要翻译：垂直腔表面发射半导体激光器具有基板，具有设置在基板上的多个层的下DBR结构部分，设置在下DBR结构部分上的半导体掩埋结构部分，其具有埋入其中的至少一层活性物质层和具有设置在包括有源层的半导体掩埋结构部分之上的多个层的上DBR结构部分。有源层，布置在有源层上的至少一个层和布置在有源层下方的至少一个层构成光学谐振器区域，并且构成光学谐振器区域的每个层具有比相应的有效折射率高的有效折射率上DBR结构部分和下DBR结构部分中的其它层以及构成半导体掩埋结构部分的至少一层的折射率。

5. 发明申请

US20090316742A1 SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD OF THE SAME 失效
标题翻译：半导体激光器件及其驱动方法
公开(公告)号：US20090316742A1
公开(公告)日：2009-12-24
申请号：US12442726
申请日：2007-08-29
申请人： Nobuyuki Kondo , Chikara Amano
发明人： Nobuyuki Kondo , Chikara Amano
IPC分类号： H01S3/04
CPC分类号： H01S5/0612 , H01S5/02415 , H01S5/02446 , H01S5/065 , H01S5/0652 , H01S5/06812 , H01S5/0683 , H01S5/141 , H01S5/146 , H01S2301/16
摘要： A semiconductor laser device according to the present invention outputs light while periodically varying the temperature of a semiconductor laser, an optical waveguide, or a diffraction grating, outputs light while causing the optical waveguide or the diffraction grating to mechanically and periodically vary, or causes return light, which varies periodically or non-periodically, to be incident on the semiconductor laser. Since the periodical fluctuation is applied to the temperature of the semiconductor laser, the optical waveguide, or diffraction grating, the periodical mechanical variation is applied to the optical waveguide or the diffraction grating, or the return light is caused to be incident on the semiconductor laser, the semiconductor laser carries out a multimode oscillation from a low output to a high output without shifting between a single mode oscillation and a multimode oscillation. Accordingly, the present invention can provide a semiconductor laser device having IL characteristics in which a current is proportional to a light output and a driving method thereof.
摘要翻译：根据本发明的半导体激光器件在周期性地改变半导体激光器，光波导或衍射光栅的温度的同时输出光，同时使光波导或衍射光栅机械地和周期性地变化，或者导致返回其周期性地或非周期地变化地入射到半导体激光器上。由于周期性波动被应用于半导体激光器，光波导或衍射光栅的温度，所以周期性机械变化被施加到光波导或衍射光栅，或者返回光入射到半导体激光器，半导体激光器从低输出到高输出执行多模振荡，而不会在单模振荡和多模振荡之间移位。因此，本发明可以提供具有IL特性的半导体激光器件，其中电流与光输出成比例，其驱动方法。

6. 发明授权

US5451767A Optical modulator gate array including multi-quantum well photodetector 失效
标题翻译：包括多量子阱光电探测器的光调制器门阵列
公开(公告)号：US5451767A
公开(公告)日：1995-09-19
申请号：US928530
申请日：1992-08-13
申请人： Chikara Amano , Shinji Matsuo , Hideki Hukano , Takashi Kurokawa , Takeshi Yamada
发明人： Chikara Amano , Shinji Matsuo , Hideki Hukano , Takashi Kurokawa , Takeshi Yamada
IPC分类号： G02F1/017 , G02F3/00 , G02F3/02 , H01L27/144 , H03K19/14 , H01J31/50
CPC分类号： B82Y20/00 , G02F1/01716 , G02F3/00 , G02F3/028 , H01L27/1443 , H03K19/14 , G02F2203/02
摘要： An optical gate array includes a photodetector, an optical modulator, and a reflecting structure arranged therebetween. The photodetector, the optical modulator, and the reflecting structure are composed of semiconductor materials. The photodetector includes an MQW (Multi Quantum Well). The reflecting structure is constituted by a distributed Bragg reflector formed by alternately stacking semiconductor layers having different refractivities. The photodetector and the optical modulator are arranged to receive light from different directions. The modulation characteristics of the optical modulator are controlled by the intensity of light radiated on the photodetector. The reflecting structure connects the photodetector and the modulator electrically and isolates lights radiated on both parts. A plurality of optical gates, each constituted by the photodetector, the optical modulator, and the reflection structure, are two-dimensionally arranged.
摘要翻译：光栅阵列包括光电检测器，光调制器和布置在其间的反射结构。光检测器，光调制器和反射结构由半导体材料组成。光电检测器包括MQW（多量子阱）。反射结构由通过交替堆叠具有不同折射率的半导体层形成的分布式布拉格反射体构成。光检测器和光调制器布置成从不同方向接收光。光调制器的调制特性由辐射在光检测器上的光的强度来控制。反射结构将光电检测器和调制器电连接并隔离两部分辐射的光。由光电检测器，光调制器和反射结构构成的多个光栅二维布置。

7. 发明申请

US20120147910A1 SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD OF THE SAME 审中-公开
标题翻译：半导体激光器件及其驱动方法
公开(公告)号：US20120147910A1
公开(公告)日：2012-06-14
申请号：US13326078
申请日：2011-12-14
申请人： Nobuyuki Kondo , Chikara Amano
发明人： Nobuyuki Kondo , Chikara Amano
IPC分类号： H01S5/06
CPC分类号： H01S5/0612 , H01S5/02415 , H01S5/02446 , H01S5/065 , H01S5/0652 , H01S5/06812 , H01S5/0683 , H01S5/141 , H01S5/146 , H01S2301/16
摘要： A semiconductor laser device that outputs light while periodically varying the temperature of a semiconductor laser, an optical waveguide, or a diffraction grating, outputs light while causing the optical waveguide or the diffraction grating to mechanically and periodically vary, or causes return light, which varies periodically or non-periodically, to be incident on the semiconductor laser. Since the periodical fluctuation is applied to the temperature of the semiconductor laser, the optical waveguide, or diffraction grating, the periodical mechanical variation is applied to the optical waveguide or the diffraction grating, or the return light is caused to be incident on the semiconductor laser, the semiconductor laser carries out a multimode oscillation from a low output to a high output without shifting between a single mode oscillation and a multimode oscillation.
摘要翻译：在周期性地改变半导体激光器，光波导或衍射光栅的温度的同时输出光的半导体激光器件，在使光波导或衍射光栅机械地和周期性地变化或引起返回光的同时输出光，其变化周期地或非周期性地入射在半导体激光器上。由于周期性波动被应用于半导体激光器，光波导或衍射光栅的温度，所以周期性机械变化被施加到光波导或衍射光栅，或者返回光入射到半导体激光器，半导体激光器从低输出到高输出执行多模振荡，而不会在单模振荡和多模振荡之间移位。

8. 发明授权

US06549553B1 Vertical-cavity surface-emitting semiconductor laser 有权
公开(公告)号：US06549553B1
公开(公告)日：2003-04-15
申请号：US09261465
申请日：1999-02-24
申请人： Hiroyuki Uenohara , Kouta Tateno , Toshiaki Kagawa , Osamu Tadanaga , Chikara Amano , Takashi Kurokawa
发明人： Hiroyuki Uenohara , Kouta Tateno , Toshiaki Kagawa , Osamu Tadanaga , Chikara Amano , Takashi Kurokawa
IPC分类号： H01S500
CPC分类号： H01S5/18308 , H01S5/18347 , H01S5/209 , H01S5/222 , H01S5/2222 , H01S5/2224 , H01S2301/166
摘要： A vertical-cavity surface-emitting semiconductor laser has a substrate, a lower DBR structure portion having a plurality of layers provided on the substrate, a semiconductor buried structure portion provided over the lower DBR structure portion having at least one layer with buried therein an active layer, and an upper DBR structure portion having a plurality of layers provided over the semiconductor buried structure portion comprising the active layer. The active layer, at least one layer arranged over the active layer and at least one layer arranged beneath the active layer constitute an optical resonator region and each of the layers constituting the optical resonator region has an effective refractive index higher than respective effective refractive indices of other layers in the upper and lower DBR structure portions and a refractive index of the at least one layer constituting the semiconductor buried structure portion.

9. 发明授权

US6127200A Vertical-cavity surface-emitting laser and method for manufacturing the same 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US6127200A
公开(公告)日：2000-10-03
申请号：US162235
申请日：1998-09-28
申请人： Yoshitaka Ohiso , Yoshio Itoh , Chikara Amano , Yoshitaka Kohama , Kouta Tateno , Hirokazu Takenouchi , Takashi Kurokawa
发明人： Yoshitaka Ohiso , Yoshio Itoh , Chikara Amano , Yoshitaka Kohama , Kouta Tateno , Hirokazu Takenouchi , Takashi Kurokawa
IPC分类号： H01S5/183 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/343 , H01L3/025
CPC分类号： B82Y20/00 , H01S5/18308 , H01S5/1838 , H01S2301/176 , H01S5/18305 , H01S5/18311 , H01S5/1833 , H01S5/2063 , H01S5/2224 , H01S5/34306 , H01S5/3434
摘要： A vertical-cavity surface-emitting semiconductor laser has first and second semiconductor multi-layered films, an active layer, and third and fourth semiconductor multi-layered films which are piled up on a GaAs substrate in that order. Furthermore, the first film is formed by piling up Al.sub.x-1 Ga.sub.1-x1 As layers (0.ltoreq.x1.ltoreq.1) and Al.sub.x2 Ga.sub.1-x2 As layers (0.ltoreq.x2.ltoreq.1) one after the other by turns. The second film is formed by piling up In.sub.x3 Ga.sub.1-x3 As.sub.y3 P.sub.1-y3 layers (0.ltoreq.x3, y3.ltoreq.1) and In.sub.x4 Ga.sub.1-x4 As.sub.y4 P.sub.1-y4 layers (0.ltoreq.x4, y4.ltoreq.1) one after the other by turns. The active layer is provided as an In.sub.x5 Ga.sub.1-x5 As.sub.y5 P.sub.1-y5 layer (0.ltoreq.x5, y5.ltoreq.1). The third film is formed by piling up In.sub.x6 Ga.sub.1-x6 As.sub.y6 P.sub.1-y6 layers (0.ltoreq.x6, y6.ltoreq.1) and In.sub.x7 Ga.sub.1-x7 As.sub.y7 P.sub.1-y7 layers (0.ltoreq.x7, y7.ltoreq.1) one after the other by turns. The fourth film is formed by piling up Al.sub.x8 Ga.sub.1-x8 As layers (0.ltoreq.x8.ltoreq.1) and Al.sub.x9 Ga.sub.1-x9 As layers (0.ltoreq.x9.ltoreq.1) one after the other by turns. In each film, each layer has a thickness corresponding to a value obtained by dividing an emission wavelength by a refractive index and 4.
摘要翻译：垂直腔表面发射半导体激光器具有依次堆积在GaAs衬底上的第一和第二半导体多层膜，有源层和第三和第四半导体多层膜。此外，第一膜通过一个接一个地叠加Alx-1Ga1-x1As层（0

10. 发明授权

US5864575A Vertical-cavity surface-emitting laser and method for manufacturing the same 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US5864575A
公开(公告)日：1999-01-26
申请号：US777975
申请日：1996-12-24
申请人： Yoshitaka Ohiso , Yoshio Itoh , Chikara Amano , Yoshitaka Kohama , Kouta Tateno , Hirokazu Takenouchi , Takashi Kurokawa
发明人： Yoshitaka Ohiso , Yoshio Itoh , Chikara Amano , Yoshitaka Kohama , Kouta Tateno , Hirokazu Takenouchi , Takashi Kurokawa
IPC分类号： H01S5/183 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/343 , H01S3/08
CPC分类号： B82Y20/00 , H01S5/18308 , H01S5/1838 , H01S2301/176 , H01S5/18305 , H01S5/18311 , H01S5/1833 , H01S5/2063 , H01S5/2224 , H01S5/34306 , H01S5/3434
摘要： A vertical-cavity surface-emitting semiconductor laser has first and second semiconductor multi-layered films, an active layer, and third and fourth semiconductor multi-layered films which are piled up on a GaAs substrate in that order. Furthermore, the first film is formed by piling up Al.sub.x1 Ga.sub.1-x1 As layers (0.ltoreq.x1.ltoreq.1) and Al.sub.x2 Ga.sub.1-x2 As layers (0.ltoreq.x2.ltoreq.1) one after the other by turns. The second film is formed by piling up In.sub.x3 Ga.sub.1-x3 As.sub.y3 P.sub.1-y3 layers (0.ltoreq.x3, y3.ltoreq.1) and In.sub.x4 Ga.sub.1-x4 As.sub.y4 P.sub.1-y4 layers (0.ltoreq.x4, y4.ltoreq.1) one after the other by turns. The active layer is provided as an In.sub.x5 Ga.sub.1-x5 As.sub.y5 P.sub.1-y5 layer (0.ltoreq.x5, y5.ltoreq.1). The third film is formed by piling up In.sub.x6 Ga.sub.1-x6 AS.sub.y6 P.sub.1-y6 layers (0.ltoreq.x6, y6.ltoreq.1) and In.sub.x7 Ga.sub.1-x7 As.sub.y7 P.sub.1-y7 layers (0.ltoreq.x7, y7.ltoreq.1) one after the other by turns. The fourth film is formed by piling up Al.sub.x8 Ga.sub.1-x8 As layers (0.ltoreq.x8.ltoreq.1) and Al.sub.x9 Ga.sub.1-x9 As layers (0.ltoreq.x9.ltoreq.1) one after the other by turns. In each film, each layer has a thickness corresponding to a value obtained by dividing an emission wavelength by a refractive index and 4.
摘要翻译：垂直腔表面发射半导体激光器具有依次堆积在GaAs衬底上的第一和第二半导体多层膜，有源层和第三和第四半导体多层膜。此外，第一膜通过一个接一个地叠加Al x Ga 1-x As层（0≤x1）和Alx2Ga1-x2As层（0

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