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1. 发明授权

US06468403B1 Methods for producing functional films 失效
标题翻译：功能膜的制备方法
公开(公告)号：US06468403B1
公开(公告)日：2002-10-22
申请号：US08281573
申请日：1994-07-28
申请人： Junichi Shimizu , Shujiro Watanabe , Satoru Takaki , Hisashi Osaki , Takuji Oyama , Eiichi Ando
发明人： Junichi Shimizu , Shujiro Watanabe , Satoru Takaki , Hisashi Osaki , Takuji Oyama , Eiichi Ando
IPC分类号： C23C1434
CPC分类号： H01J37/3444 , C03C17/002 , C03C17/225 , C03C17/245 , C03C17/2453 , C03C17/3435 , C03C2217/211 , C03C2217/213 , C03C2217/214 , C03C2217/215 , C03C2217/216 , C03C2217/231 , C03C2217/24 , C03C2217/244 , C03C2217/281 , C03C2217/948 , C03C2218/154 , C03C2218/155 , C23C14/0652 , C23C14/086 , C23C14/10 , C23C14/34 , C23C14/35 , G02F1/13439 , H01B1/08
摘要： A method for producing a transparent conductive film composed mainly of an oxide by sputtering using a sputtering target capable of forming a transparent conductive film, wherein intermittent electric power is supplied to the target.
摘要翻译：使用能够形成透明导电膜的溅射靶通过溅射主要由氧化物构成的透明导电膜的制造方法，其中向靶标供给间歇电力。

2. 发明授权

US6110328A Method of an apparatus for sputtering 失效
标题翻译：溅射装置的方法
公开(公告)号：US6110328A
公开(公告)日：2000-08-29
申请号：US759431
申请日：1996-12-05
申请人： Junichi Shimizu , Shujiro Watanabe , Satoru Takaki , Hisashi Osaki , Takuji Oyama , Eiichi Ando
发明人： Junichi Shimizu , Shujiro Watanabe , Satoru Takaki , Hisashi Osaki , Takuji Oyama , Eiichi Ando
IPC分类号： C03C17/00 , C03C17/22 , C03C17/245 , C03C17/34 , C23C14/06 , C23C14/08 , C23C14/34 , C23C14/35 , G02F1/1343 , H01B1/08
CPC分类号： H01J37/3444 , C03C17/002 , C03C17/225 , C03C17/245 , C03C17/2453 , C03C17/3435 , C23C14/0652 , C23C14/086 , C23C14/34 , C23C14/35 , H01B1/08 , C03C2217/211 , C03C2217/213 , C03C2217/214 , C03C2217/215 , C03C2217/216 , C03C2217/231 , C03C2217/24 , C03C2217/244 , C03C2217/281 , C03C2218/154 , C03C2218/155 , G02F1/13439
摘要： A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.
摘要翻译：溅射方法包括将恒定周期性周期性的负电压施加到设置在真空室中的阴极，其中间歇地施加负电压，使得不施加负电压的时间包括电压为在10μs至10ms的范围内控制为零伏特，并且零电压时间等于或长于从其产生到消光的一次电弧所需的时间。

3. 发明授权

US5660700A Sputter coating power processing portion 失效
标题翻译：溅射涂层电源处理部分
公开(公告)号：US5660700A
公开(公告)日：1997-08-26
申请号：US281574
申请日：1994-07-28
申请人： Junichi Shimizu , Shujiro Watanabe , Satoru Takaki , Hisashi Osaki , Takuji Oyama , Eiichi Ando
发明人： Junichi Shimizu , Shujiro Watanabe , Satoru Takaki , Hisashi Osaki , Takuji Oyama , Eiichi Ando
IPC分类号： C03C17/00 , C03C17/22 , C03C17/245 , C03C17/34 , C23C14/06 , C23C14/08 , C23C14/34 , C23C14/35 , G02F1/1343 , H01B1/08 , C23C14/38
CPC分类号： H01J37/3444 , C03C17/002 , C03C17/225 , C03C17/245 , C03C17/2453 , C03C17/3435 , C23C14/0652 , C23C14/086 , C23C14/34 , C23C14/35 , H01B1/08 , C03C2217/211 , C03C2217/213 , C03C2217/214 , C03C2217/215 , C03C2217/216 , C03C2217/231 , C03C2217/24 , C03C2217/244 , C03C2217/281 , C03C2218/154 , C03C2218/155 , G02F1/13439
摘要： A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.
摘要翻译：溅射方法包括将恒定周期性周期性的负电压施加到设置在真空室中的阴极，其中间歇地施加负电压，使得不施加负电压的时间包括电压为在10μs至10ms的范围内控制为零伏特，并且零电压时间等于或长于从其产生到消光的一次电弧所需的时间。

4. 发明授权

US06334938B2 Target and process for its production, and method for forming a film having a high refractive index 有权
$Target and process for its production, and method for forming a film having a high refractive index$
公开(公告)号：US06334938B2
公开(公告)日：2002-01-01
申请号：US09729102
申请日：2000-12-05
申请人： Otojiro Kida , Akira Mitsui , Eri Suzuki , Hisashi Osaki , Atsushi Hayashi , Takuji Oyama , Kenichi Sasaki
发明人： Otojiro Kida , Akira Mitsui , Eri Suzuki , Hisashi Osaki , Atsushi Hayashi , Takuji Oyama , Kenichi Sasaki
IPC分类号： C23C1434
CPC分类号： C23C14/083 , C23C4/02 , C23C4/11 , C23C14/3414
摘要： A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.

5. 发明授权

US5009922A Method of forming a transparent conductive film 失效
标题翻译：形成透明导电膜的方法
公开(公告)号：US5009922A
公开(公告)日：1991-04-23
申请号：US486841
申请日：1990-03-01
申请人： Takeshi Harano , Satoru Takaki , Yuzo Shigesato , Koichi Suzuki , Naoki Hashimoto , Hiroyasu Kojima , Takuji Oyama
发明人： Takeshi Harano , Satoru Takaki , Yuzo Shigesato , Koichi Suzuki , Naoki Hashimoto , Hiroyasu Kojima , Takuji Oyama
IPC分类号： C03C17/245 , C23C14/08 , C23C14/32
CPC分类号： C23C14/325 , C03C17/245 , C03C17/2453 , C23C14/086 , C03C2217/211 , C03C2217/215 , C03C2217/216 , C03C2217/231 , C03C2218/151
摘要： In a method of forming a transparent conductive film, an arc discharge type plasma produced by arc discharging is generated in an atmosphere wherein the pressure of an atmospheric gas is 3.0 .times. 10.sup.-4 Torr or higher; the plasma is converged onto a vapor deposition material for forming a transparent conductive film to thereby evaporate the vapor deposition material, whereby said transparent conductive film is formed on a substrate located above said vapor deposition material.

6. 发明授权

US5772862A Film comprising silicon dioxide as the main component and method for its productiion 失效
标题翻译：以二氧化硅为主要成分的薄膜及其制造方法
公开(公告)号：US5772862A
公开(公告)日：1998-06-30
申请号：US429845
申请日：1995-04-27
申请人： Eiichi Ando , Akira Mitsui , Junichi Ebisawa , Koichi Suzuki , Kiyoshi Matsumoto , Takuji Oyama
发明人： Eiichi Ando , Akira Mitsui , Junichi Ebisawa , Koichi Suzuki , Kiyoshi Matsumoto , Takuji Oyama
IPC分类号： B32B17/10 , B32B27/06 , C03C17/23 , C03C17/245 , C03C17/25 , C03C17/34 , C03C17/36 , C03C17/38 , C03C17/42 , C23C14/08 , C23C14/10 , C23C14/34 , G02B1/10 , G02B1/11 , G02F1/1333 , G02F1/1335 , H01J37/34
CPC分类号： C03C17/3605 , B32B17/10174 , B32B27/06 , C03C17/23 , C03C17/245 , C03C17/25 , C03C17/3417 , C03C17/3435 , C03C17/3482 , C03C17/3488 , C03C17/36 , C03C17/3613 , C03C17/3618 , C03C17/3639 , C03C17/3644 , C03C17/3652 , C03C17/3657 , C03C17/3681 , C03C17/38 , C03C17/42 , C23C14/08 , C23C14/10 , C23C14/3407 , C23C14/3414 , G02B1/10 , G02B1/105 , G02B1/116 , H01J37/3426 , H01J37/3435 , H01J37/3491 , C03C2217/213 , C03C2217/229 , C03C2217/23 , C03C2217/242 , C03C2217/732 , C03C2218/11 , C03C2218/15 , C03C2218/154 , G02F1/133502 , G02F2001/133337 , Y02T10/88
摘要： The present invention relates to a film comprising silicon dioxide as the main component, which contains Zr, etc., and a method for forming it by reactive DC sputtering. It makes it possible to form reflection preventive films, alkali barrier films and various multi-layered films such as multi-layered films for anti-iridescent glass, which contain said film comprising silicon dioxide as the main component, by a physical vapor deposition method without breaking a vacuum.
摘要翻译：本发明涉及包含二氧化硅作为主要成分的含Zr等的薄膜及其用反应型DC溅射法形成的方法。通过物理气相沉积法可以形成防反射膜，碱阻挡膜和各种多层膜，例如用于防虹彩玻璃的多层膜，其包含以二氧化硅为主要成分的所述膜，而没有打破真空

7. 发明授权

US5605609A Method for forming low refractive index film comprising silicon dioxide 失效
$Method for forming low refractive index film comprising silicon dioxide$
标题翻译：用于形成包含二氧化硅的低折射率膜的方法
公开(公告)号：US5605609A
公开(公告)日：1997-02-25
申请号：US323579
申请日：1994-10-17
申请人： Eiichi Ando , Akira Mitsui , Junichi Ebisawa , Koichi Suzuki , Kiyoshi Matsumoto , Takuji Oyama
发明人： Eiichi Ando , Akira Mitsui , Junichi Ebisawa , Koichi Suzuki , Kiyoshi Matsumoto , Takuji Oyama
IPC分类号： B32B17/10 , B32B27/06 , C03C17/23 , C03C17/245 , C03C17/25 , C03C17/34 , C03C17/36 , C03C17/38 , C03C17/42 , C23C14/08 , C23C14/10 , C23C14/34 , G02B1/10 , G02B1/11 , G02F1/1333 , G02F1/1335 , H01J37/34
CPC分类号： C03C17/3605 , B32B17/10174 , B32B27/06 , C03C17/23 , C03C17/245 , C03C17/25 , C03C17/3417 , C03C17/3435 , C03C17/3482 , C03C17/3488 , C03C17/36 , C03C17/3613 , C03C17/3618 , C03C17/3639 , C03C17/3644 , C03C17/3652 , C03C17/3657 , C03C17/3681 , C03C17/38 , C03C17/42 , C23C14/08 , C23C14/10 , C23C14/3407 , C23C14/3414 , G02B1/10 , G02B1/105 , G02B1/116 , H01J37/3426 , H01J37/3435 , H01J37/3491 , C03C2217/213 , C03C2217/229 , C03C2217/23 , C03C2217/242 , C03C2217/732 , C03C2218/11 , C03C2218/15 , C03C2218/154 , G02F1/133502 , G02F2001/133337 , Y02T10/88
摘要： The present invention relates to a film comprising silicon dioxide as the main component, which contains Zr, etc., and a method for forming it by reactive DC sputtering. It makes it possible to form reflection preventive films, alkali barrier films and various multi-layered films such as multi-layered films for anti-iridescent glass, which contain said film comprising silicon dioxide as the main component, by a physical vapor deposition method without breaking a vacuum.
摘要翻译：本发明涉及包含二氧化硅作为主要成分的含Zr等的薄膜及其用反应型DC溅射法形成的方法。通过物理气相沉积法可以形成防反射膜，碱阻挡膜和各种多层膜，例如用于防虹彩玻璃的多层膜，其包含以二氧化硅为主要成分的所述膜，而没有打破真空

8. 发明申请

US20070268896A1 Communication system and management device and relay device used therein 审中-公开
标题翻译：其中使用的通信系统及管理装置及中继装置
公开(公告)号：US20070268896A1
公开(公告)日：2007-11-22
申请号：US11649271
申请日：2007-01-04
申请人： Takuji Oyama , Hidehiko Suzuki , Tatsuhiro Ando
发明人： Takuji Oyama , Hidehiko Suzuki , Tatsuhiro Ando
IPC分类号： H04L12/56
CPC分类号： H04L65/1006 , H04L29/06027 , H04L41/00 , H04L65/1026 , H04L65/1036 , H04L65/1069 , H04L69/08
摘要： The present invention provides a communication system facilitating introduction into an existing network and improving a quality of service of communications. The communication system is configured by connecting a relay device performing wireless communications with a terminal, a management device managing the relay device and a server to each other via an IP network, the relay device has a packet generating unit generating an encapsulated packet containing, as a payload, and transferring unit transferring the encapsulated packet to the management device, and the management device has a receiving unit receiving the encapsulated packet transmitted from the relay device, and a transmitting unit transmitting a predetermined encapsulated packet in the encapsulated packets received by the receiving unit back to the relay device.
摘要翻译：本发明提供一种便于引入现有网络并提高通信服务质量的通信系统。所述通信系统通过将经由IP网络与进行无线通信的中继装置，管理所述中继装置的管理装置和服务器相互连接而构成，所述中继装置具有分组生成部，生成包含以下一个有效载荷，以及将封装的分组传送到管理设备的传送单元，并且该管理设备具有接收从该中继设备发送的封装分组的接收单元，以及一个发送单元，在接收到的封装分组中发送预定的封装分组单元返回到继电器。

9. 发明申请

US20050205998A1 Multilayer film-coated substrate and process for its production 有权
标题翻译：多层薄膜基材及其生产工艺
公开(公告)号：US20050205998A1
公开(公告)日：2005-09-22
申请号：US11110849
申请日：2005-04-21
申请人： Tomohiro Yamada , Eiji Shidoji , Akira Mitsui , Takuji Oyama , Toshihisa Kamiyama
发明人： Tomohiro Yamada , Eiji Shidoji , Akira Mitsui , Takuji Oyama , Toshihisa Kamiyama
IPC分类号： C23C14/08 , C23C14/10 , H01L21/4763 , H01L23/48 , H01Q1/12
CPC分类号： C23C14/10 , C23C14/083 , H01Q1/1271 , Y10T428/26 , Y10T428/266
摘要： A multilayer film-coated substrate having the stress of the film relaxed by depositing a multilayer film comprising a metal oxide film and a silicon oxide film on a substrate at a high speed by a sputtering method using a conductive sputtering material, and a process for producing a multilayer film-coated substrate having such a low stress, are presented. A multilayer film-coated substrate comprising a substrate and at least a metal oxide film and a silicon oxide film laminated thereon repeatedly at least once, wherein at least one layer of said metal oxide film is a metal oxide film deposited by sputtering by using, as the target material, a metal oxide MOX which is deficient in oxygen than the stoichiometric composition, to have the oxygen deficiency resolved, and the stress of the multilayer film is from −100 MPa to +100 MPa.
摘要翻译：通过使用导电性溅射材料的溅射法，通过在基板上高速沉积包含金属氧化物膜和氧化硅膜的多层膜而使薄膜的应力弛豫的多层膜被覆基板，以及制造方法提出了具有如此低应力的多层膜涂覆的基板。一种多层膜被覆基板，包括基板和至少一层金属氧化物膜和氧化硅膜，其上重复层叠至少一次，其中至少一层所述金属氧化物膜是通过溅射沉积的金属氧化物膜，其通过使用作为目标材料，缺氧量低于化学计量组成的金属氧化物MO X X，以使氧缺陷分解，多层膜的应力为-100MPa〜+100MPa。

10. 发明申请

US20050008879A1 High reflectance mirror 失效
标题翻译：高反射镜
公开(公告)号：US20050008879A1
公开(公告)日：2005-01-13
申请号：US10875270
申请日：2004-06-25
申请人： Naoko Shin , Takuji Oyama , Kazuo Kadowaki
发明人： Naoko Shin , Takuji Oyama , Kazuo Kadowaki
IPC分类号： G02B5/08 , G02B1/10 , B32B15/04 , B32B9/00 , B32B9/06
CPC分类号： G02B5/0858 , C23C14/024 , C23C14/086 , Y10T428/31678
摘要： A high reflectance mirror having a high reflectance in a visible-light region, being excellent in durability such as a moisture resistance, a saltwater resistance, etc. and having small dependence on incident angle (i.e., the fluctuation of the reflectance depending on an incident angle of light is little) is provided. The high reflectance mirror comprises a substrate and a silver film, a low refractive index film and a high refractive index film laminated on the substrate in this order wherein an adhesion improving film is formed on the silver film surface on the opposite side of the substrate, the extinction coefficient of the low refractive index film is at most 0.01, the extinction coefficient of the high refractive index film is at most 0.01, the adhesion improving film is an oxide film and the extinction coefficient of the adhesion improving film is at most 0.1.
摘要翻译：在可见光区域具有高反射率的高反射率反射镜，耐湿性，耐盐水性等耐久性优异并且对入射角的依赖性小（即，取决于事件的反射率的波动）光的角度很小）。高反射镜包括基板和基板上层叠有低折射率膜和高折射率膜的基板，在该基板的相反侧的银膜表面上形成有粘附改善膜，低折射率膜的消光系数为0.01以下，高折射率膜的消光系数为0.01以下，粘合改善膜为氧化膜，粘合改善膜的消光系数为0.1以下。

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