专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060252257A1 Method of forming isolation structure of semiconductor device 失效
标题翻译：形成半导体器件隔离结构的方法
公开(公告)号：US20060252257A1
公开(公告)日：2006-11-09
申请号：US11416738
申请日：2006-05-02
申请人： Jung Ahn , Byung Park
发明人： Jung Ahn , Byung Park
IPC分类号： H01L21/4763
CPC分类号： H01L21/76232
摘要： A method of forming a semiconductor device includes etching a semiconductor substrate to form a first trench having a first width and a first depth; etching the semiconductor substrate to form a second trench having a second width and a second depth, the second trench overlapping the first trench, the second width being greater than the first width, the second depth being less than the first depth, whereby a trench having a dual structure is formed; and forming a first isolation structure within the trench having the dual structure. An embodiment of the present invention relates to a method of forming an isolation structure of a semiconductor device.
摘要翻译：形成半导体器件的方法包括蚀刻半导体衬底以形成具有第一宽度和第一深度的第一沟槽; 蚀刻所述半导体衬底以形成具有第二宽度和第二深度的第二沟槽，所述第二沟槽与所述第一沟槽重叠，所述第二宽度大于所述第一宽度，所述第二深度小于所述第一深度，由此具有形成双重结构; 以及在具有双重结构的沟槽内形成第一隔离结构。本发明的实施例涉及一种形成半导体器件的隔离结构的方法。

2. 发明申请

US20070039937A1 METHODS FOR MANUFACTURING FLUX CORED WIRE FOR WELDING STAINLESS STEEL AND PRODUCTS THEREOF 审中-公开
标题翻译：焊接不锈钢及其制品的焊丝的制造方法
公开(公告)号：US20070039937A1
公开(公告)日：2007-02-22
申请号：US11463225
申请日：2006-08-08
申请人： Jong Jang , Byung Park
发明人： Jong Jang , Byung Park
IPC分类号： B23K35/02
CPC分类号： B23K35/02
摘要： Disclosed is a method for manufacturing a flux cored wire for welding stainless steel of 0.9-1.6 mm in diameter having a seamed portion, which the method includes the steps of: forming a hoop (stainless steel 304L or 316L) into a U-shape and filling the hoop with a flux mixture, thereby forming a tube having a seamed portion; performing a primary drawing process on the tube shaped wire using a lubricant; performing a bright annealing process to relieve work hardening of the primarily drawn wire; performing a secondary drawing process on the wire until an accumulated reduction ratio after the bright annealing process falls within the range of 38-60%; physically removing a lubricant residue on the surface of the secondarily drawn wire; and coating the wire with a surface treatment agent.
摘要翻译：公开了一种用于焊接具有接缝部分的直径为0.9-1.6mm的不锈钢药芯焊丝的方法，该方法包括以下步骤：将环（不锈钢304L或316L）形成为U形，用焊剂混合物填充箍，从而形成具有缝合部分的管; 使用润滑剂对管状金属丝进行初级拉伸加工; 进行光亮退火处理以减轻主拉丝的加工硬化; 在丝线上进行二次拉伸处理，直到光亮退火处理后的累积压下率在38〜60％的范围内; 物理地去除二次拉丝的表面上的润滑剂残留物; 并用表面处理剂涂覆线材。

3. 发明申请

US20070002223A1 Transflective type liquid crystal display device and method of Manufacturing the same 有权
标题翻译：透反式液晶显示装置及其制造方法
公开(公告)号：US20070002223A1
公开(公告)日：2007-01-04
申请号：US11311687
申请日：2005-12-20
申请人： Byung Park
发明人： Byung Park
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/133345 , G02F1/133553 , G02F1/136227
摘要： A transflective type LCD including: a substrate in which a pixel region having a reflection region and a transmission region are defined; a gate line and a data line crossing each other on the substrate to define the pixel region; a TFT (thin film transistor) formed at the crossing of the gate line and the data line; a transparent electrode formed in the pixel region and connected to a drain electrode of the TFT; a storage electrode formed on the gate line; a reflective electrode formed in the reflection region; and an insulation layer with a protrusion pattern formed in the reflection region, wherein the insulation layer in the reflection region is in between the transparent electrode and the reflective electrode.
摘要翻译：一种半透半反型型液晶显示器，包括：其中限定了具有反射区域和透射区域的像素区域的基板; 在基板上彼此交叉的栅极线和数据线，以限定像素区域; 形成在栅极线与数据线的交叉处的TFT（薄膜晶体管）; 形成在像素区域并连接到TFT的漏电极的透明电极; 形成在栅极线上的存储电极; 形成在反射区域中的反射电极; 以及在所述反射区域中形成有突起图案的绝缘层，其中所述反射区域中的所述绝缘层在所述透明电极和所述反射电极之间。

4. 发明申请

US20060060561A1 Method of fabricating inkjet print head using photocurable resin composition 有权
标题翻译：使用光固化树脂组合物制造喷墨打印头的方法
公开(公告)号：US20060060561A1
公开(公告)日：2006-03-23
申请号：US11210909
申请日：2005-08-25
申请人： Byung Park , Jong-Jin Park , Young-Ung Ha
发明人： Byung Park , Jong-Jin Park , Young-Ung Ha
IPC分类号： G01D15/00 , G11B5/127
CPC分类号： B41J2/1631 , B41J2/1603 , B41J2/1626 , B41J2/1632 , B41J2/1645
摘要： A method of fabricating an inkjet print head includes forming at least one energy generating element to eject ink on a substrate. A chamber layer and a nozzle layer are formed on the substrate, wherein the nozzle layer has a nozzle corresponding to the energy generating elements, and at least one of the chamber layer and the nozzle layer is formed using a photocurable resin composition that includes a photo-base generator, an epoxy resin and a non-photoreactive solvent.
摘要翻译：制造喷墨打印头的方法包括形成至少一种能量产生元件以将墨喷射到基底上。在基板上形成室层和喷嘴层，其中喷嘴层具有与能量产生元件对应的喷嘴，并且使用包括照片的光固化树脂组合物形成室层和喷嘴层中的至少一个碱发生器，环氧树脂和非光反应溶剂。

5. 发明申请

US20070205422A1 Liquid crystal display device and fabricating method thereof 有权
公开(公告)号：US20070205422A1
公开(公告)日：2007-09-06
申请号：US11790068
申请日：2007-04-23
申请人： Byung Ahn , Joo Lim , Byung Park
发明人： Byung Ahn , Joo Lim , Byung Park
IPC分类号： H01L31/12
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/458 , H01L29/4908 , Y10S438/951
摘要： A thin film transistor substrate and a fabricating method thereof for simplifying a process are disclosed. In a liquid crystal display device according to the present invention, a gate line is provided on a substrate. A data line crosses the gate line with having a gate insulating film therebetween to define a pixel area. A thin film transistor includes a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode opposed to the source electrode and a semiconductor layer for defining a channel between the source electrode and the drain electrode. A pixel electrode is connected to the drain electrode and is provided at said pixel area. Herein, said data line, said source electrode and said drain electrode have a double-layer structure in which a source/drain metal pattern and a transparent conductive pattern are built. Said pixel electrode is formed by an extension of the transparent conductive pattern of the drain electrode. A protective film makes a border with the transparent conductive pattern and provided at the remaining area thereof.

6. 发明申请

US20070108060A1 Method of preparing copper plating layer having high adhesion to magnesium alloy using electroplating 失效
标题翻译：使用电镀制备对镁合金具有高附着性的镀铜层的方法
公开(公告)号：US20070108060A1
公开(公告)日：2007-05-17
申请号：US11350911
申请日：2006-02-10
申请人： Byung Park
发明人： Byung Park
IPC分类号： C25D5/42
CPC分类号： C25D5/42 , C25D3/38 , C25D3/40 , C25D5/10
摘要： Disclosed is a method of preparing a copper electroplating layer having high adhesion to a magnesium alloy, which is advantageous because the usability of the magnesium alloy, having the highest specific strength among actually usable metals, can be increased through the development of a process of forming a uniform copper plating layer upon electroplating of the magnesium alloy. The method of preparing a copper electroplating layer having high adhesion to a magnesium alloy of this invention is characterized in that the magnesium alloy is pretreated with a plating pretreatment solution to form a film for electroplating, serving as a magnesium alloy pretreatment layer, exhibiting a uniform current distribution, which is then electroplated with copper to form the copper plating layer. According to this invention, through the pretreatment of the magnesium alloy, the adhesion of the copper plating layer to the film for electroplating formed on the magnesium alloy can be increased.
摘要翻译：公开了一种制备对镁合金具有高粘附性的铜电镀层的方法，这是有利的，因为通过开发成型工艺可以提高具有最高比强度的镁合金在实际使用的金属中的可用性在镁合金电镀时的均匀镀铜层。制备对本发明的镁合金具有高粘附性的铜电镀层的方法的特征在于，镁合金用电镀预处理溶液预处理以形成用作电镀的膜，用作镁合金预处理层，显示出均匀的电流分布，然后用铜电镀以形成镀铜层。根据本发明，通过镁合金的预处理，能够提高铜镀层与形成在镁合金上的电镀用膜的密合性。

7. 发明申请

US20060224619A1 System for providing media service using sensor network and metadata 审中-公开
标题翻译：使用传感器网络和元数据提供媒体服务的系统
公开(公告)号：US20060224619A1
公开(公告)日：2006-10-05
申请号：US11182950
申请日：2005-07-18
申请人： Jeong Kang , Byeong Choi , Byung Park , Je Kim , Min Lee
发明人： Jeong Kang , Byeong Choi , Byung Park , Je Kim , Min Lee
IPC分类号： G06F17/00
CPC分类号： H04L12/2809 , H04L2012/2841 , H04N21/4147 , H04N21/6125
摘要： Disclosed herein is a system for providing media service using a sensor network and metadata. The sensor network includes a plurality of sensor network nodes connected to a media server and one or more media devices, respectively. The media server includes a media information storage unit, a sensor interface unit, a metadata storage unit, a content selection unit and a content transmission unit. The media device includes a content reception unit, a sensor interface unit and a metadata storage unit. The sensor network nodes each include a network interface unit, a device interface unit and a metadata storage unit. In detail, the metadata are input to the corresponding sensor network node, media content desired by a user is intelligently retrieved based on the metadata, and the media content desired by the user is provided to the media device desired by the user, including a mobile media device in the user's possession, at a time desired by the user.
摘要翻译：本文公开了一种使用传感器网络和元数据提供媒体服务的系统。传感器网络包括分别连接到媒体服务器和一个或多个媒体设备的多个传感器网络节点。媒体服务器包括媒体信息存储单元，传感器接口单元，元数据存储单元，内容选择单元和内容传输单元。媒体设备包括内容接收单元，传感器接口单元和元数据存储单元。传感器网络节点各自包括网络接口单元，设备接口单元和元数据存储单元。详细地，将元数据输入到相应的传感器网络节点，基于元数据智能地检索用户期望的媒体内容，并且将用户期望的媒体内容提供给用户期望的媒体设备，包括移动用户拥有的媒体设备，在用户期望的时间。

8. 发明申请

US20060139997A1 Flash memory device 有权
标题翻译：闪存设备
公开(公告)号：US20060139997A1
公开(公告)日：2006-06-29
申请号：US11299063
申请日：2005-12-09
申请人： Hee Park , Kyeong Lee , Byung Park
发明人： Hee Park , Kyeong Lee , Byung Park
IPC分类号： G11C16/28 , G11C16/06 , G11C16/04
CPC分类号： G11C16/3418 , G11C16/0483 , G11C16/3427
摘要： A flash memory device comprises a first group of dummy memory cells disposed between source selection transistors, which are coupled to a source selection line, and memory cells coupled to a first wordline. The flash memory device further comprises a second group of dummy memory cells disposed between drain selection transistors, which are coupled to a drain selection line, and memory cells coupled to the last wordline. The flash memory device is configured to prevent program disturbance in deselected cell strings and degradation of programming/erasing speeds in a selected cell string.
摘要翻译：闪速存储器件包括设置在源选择晶体管之间的第一组虚拟存储器单元，其耦合到源选择线，以及耦合到第一字线的存储器单元。闪速存储器件还包括设置在漏极选择晶体管之间的第二组虚设存储器单元，其耦合到漏极选择线，以及耦合到最后一个字线的存储器单元。闪存器件被配置为防止未选择的单元串中的程序干扰以及所选单元串中编程/擦除速度的劣化。

9. 发明授权

US07265327B1 Photodetecting sensor array 有权
标题翻译：光电检测传感器阵列
公开(公告)号：US07265327B1
公开(公告)日：2007-09-04
申请号：US10775592
申请日：2004-02-09
申请人： Byung Park , Richard Weisfield , William Yao
发明人： Byung Park , Richard Weisfield , William Yao
IPC分类号： H01L27/00
CPC分类号： H01L27/14603
摘要： Photodetecting devices or arrays and methods of making such devices or arrays. In one exemplary embodiment, a photodetecting array includes a plurality of detecting cells arranged in an array, each of the detecting cells including a photodiode, a plurality of data lines coupled to the detecting cells, and a mesh of bias voltage lines which comprise first bias lines disposed substantially parallel to gate lines which are coupled to the detecting cells and second bias lines disposed substantially perpendicularly to the gate lines, wherein the total length of the first bias lines exceeds a total length of the second bias lines.
摘要翻译：检测设备或阵列以及制造这种设备或阵列的方法。在一个示例性实施例中，光检测阵列包括以阵列布置的多个检测单元，每个检测单元包括光电二极管，耦合到检测单元的多条数据线，以及包含第一偏置的偏压线的网格基本上平行于与检测单元耦合的栅极线并且基本上垂直于栅极线设置的第二偏置线布置，其中第一偏置线的总长度超过第二偏置线的总长度。

10. 发明申请

US20070001214A1 Method of manufacturing flash memory device 审中-公开
标题翻译：制造闪存设备的方法
公开(公告)号：US20070001214A1
公开(公告)日：2007-01-04
申请号：US11445775
申请日：2006-06-02
申请人： Byung Park
发明人： Byung Park
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L27/11519 , H01L29/40114
摘要： A method of manufacturing flash memory devices, wherein in a peripheral region, a polysilicon layer is formed to extend on an isolation film at the interface of an active region and the isolation film. The isolation film that has been partially wet-etched is over etched when removing a dielectric layer. It is thus possible to prevent a thinning phenomenon in which a gate oxide film is made thin. As a result, a breakdown voltage of an oxide film, which occurs in the gate oxide film, can be prevented. Furthermore, characteristics of transistors can be prevented. In addition, resistance of about several hundreds ohm/square, of the polysilicon layer can be formed.
摘要翻译：一种制造闪速存储器件的方法，其中在周边区域中形成多晶硅层，以在有源区和隔离膜的界面处的隔离膜上延伸。当去除电介质层时，被部分湿蚀刻的隔离膜过蚀刻。因此，可以防止使栅极氧化膜变薄的变薄现象。结果，可以防止在栅极氧化膜中发生的氧化膜的击穿电压。此外，可以防止晶体管的特性。此外，可以形成约几百欧姆/平方的多晶硅层的电阻。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式