会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
    • 用于具有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物
    • US08114775B2
    • 2012-02-14
    • US12352700
    • 2009-01-13
    • Junaid Ahmed SiddiquiDaniel Hernandez CastilloSteven Masami AragakiRobin Edward Richards
    • Junaid Ahmed SiddiquiDaniel Hernandez CastilloSteven Masami AragakiRobin Edward Richards
    • H01L21/302
    • C09K3/1463C09G1/02H01L21/02074H01L21/3212H01L21/32125
    • A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.
    • 化学机械抛光组合物包含1)水,2)任选的研磨材料,3)氧化剂,优选每种型氧化剂,4)少量可溶性金属离子氧化剂/抛光促进剂,金属离子抛光促进剂 与颗粒结合,例如磨料颗粒或两者; 和5)选自a)少量螯合剂中的至少一种,b)少量的二羟基烯醇化合物,和c)少量的有机促进剂。 少于800ppm,优选在约100ppm和500ppm之间的抗坏血酸是优选的二羟基烯醇化合物。 抛光组合物和方法对于在集成电路中发现的基本上所有的金属和金属化合物都是有用的,但对钨尤其有用。 本发明还涉及表面改性的胶体研磨抛光组合物以及使用这些组合物,特别是用于化学机械平面化的相关方法,其中浆料包含低水平的螯合自由基猝灭剂,非螯合自由基猝灭剂或二者。
    • 2. 发明授权
    • Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
    • 用于具有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物
    • US07476620B2
    • 2009-01-13
    • US11387934
    • 2006-03-24
    • Junaid Ahmed SiddiquiDaniel Hernandez CastilloSteven Masami AragakiRobin Edward Richards
    • Junaid Ahmed SiddiquiDaniel Hernandez CastilloSteven Masami AragakiRobin Edward Richards
    • H01L21/302
    • C09K3/1463C09G1/02H01L21/02074H01L21/3212H01L21/32125
    • A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.
    • 化学机械抛光组合物包含1)水,2)任选的研磨材料,3)氧化剂,优选每种型氧化剂,4)少量可溶性金属离子氧化剂/抛光促进剂,金属离子抛光促进剂 与颗粒结合,例如磨料颗粒或两者; 和5)选自a)少量螯合剂中的至少一种,b)少量的二羟基烯醇化合物,和c)少量的有机促进剂。 少于800ppm,优选在约100ppm和500ppm之间的抗坏血酸是优选的二羟基烯醇化合物。 抛光组合物和方法对于在集成电路中发现的基本上所有的金属和金属化合物都是有用的,但对钨尤其有用。 本发明还涉及表面改性的胶体研磨抛光组合物以及使用这些组合物,特别是用于化学机械平面化的相关方法,其中浆料包含低水平的螯合自由基猝灭剂,非螯合自由基猝灭剂或二者。
    • 5. 发明申请
    • DIHYDROXY ENOL COMPOUNDS USED IN CHEMICAL MECHANICAL POLISHING COMPOSITIONS HAVING METAL ION OXIDIZERS
    • 具有金属氧化物的化学机械抛光组合物中使用的二氢氧化合物
    • US20090308836A1
    • 2009-12-17
    • US12352700
    • 2009-01-13
    • Junaid Ahmed SiddiquiDaniel Hernandez CastilloSteven Masaml AragakiRobin Edward Richards
    • Junaid Ahmed SiddiquiDaniel Hernandez CastilloSteven Masaml AragakiRobin Edward Richards
    • B44C1/22C09K13/00
    • C09K3/1463C09G1/02H01L21/02074H01L21/3212H01L21/32125
    • A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.
    • 化学机械抛光组合物包含1)水,2)任选的研磨材料,3)氧化剂,优选每种型氧化剂,4)少量可溶性金属离子氧化剂/抛光促进剂,金属离子抛光促进剂 与颗粒结合,例如磨料颗粒或两者; 和5)选自a)少量螯合剂中的至少一种,b)少量的二羟基烯醇化合物,和c)少量的有机促进剂。 少于800ppm,优选在约100ppm和500ppm之间的抗坏血酸是优选的二羟基烯醇化合物。 抛光组合物和方法对于在集成电路中发现的基本上所有的金属和金属化合物都是有用的,但对钨尤其有用。 本发明还涉及表面改性的胶体研磨抛光组合物以及使用这些组合物,特别是用于化学机械平面化的相关方法,其中浆料包含低水平的螯合自由基猝灭剂,非螯合自由基猝灭剂或二者。
    • 9. 发明授权
    • Separation of oxygen from oxygen-containing gas
    • 氧气与含氧气体的分离
    • US6090265A
    • 2000-07-18
    • US141909
    • 1998-08-28
    • Stuart AdlerRobin Edward RichardsPaul Nigel Dyer
    • Stuart AdlerRobin Edward RichardsPaul Nigel Dyer
    • B01D53/22B01D53/00B01D53/32B01D71/02C01B13/02C01B23/00C04B35/053C04B35/111H01M8/02C25C1/00C25C1/10
    • C04B35/053B01D53/326C01B13/0251H01M8/0271B01D2257/104C01B2210/0046C01B2210/0082
    • An electrochemical device for separating oxygen from an oxygen-containing gas comprises a plurality of planar ion-conductive solid electrolyte plates and electrically-conductive gas-impermeable interconnects assembled in a multi-cell stack. Electrically-conductive anode and cathode material is applied to opposite sides of each electrolyte plate. A gas-tight anode seal is bonded between the anode side of each electrolyte plate and the anode side of the adjacent interconnect. A regulating electrode, applied to the anode side of each electrolyte plate between the anode seal and the edge of the anode, eliminates anode seal failure by maintaining the 24-hour anode seal power density below about 1.5 .mu.W/cm.sup.2. A gas-tight seal is applied between the cathode sides of each electrolyte plate and the adjacent interconnect such that the anode and cathode seals are radially offset on opposite sides of the plate. The combination of regulating electrodes and offset seals is particularly effective in eliminating anode seal failure.
    • 用于从含氧气体中分离氧的电化学装置包括多个平面离子导电固体电解质板和组装在多电池堆中的导电气体不可渗透互连。 将导电阳极和阴极材料施加到每个电解质板的相对侧。 在每个电解质板的阳极侧和相邻互连件的阳极侧之间结合气密阳极密封。 施加到阳极密封件和阳极边缘之间的每个电解质板的阳极侧的调节电极通过将24小时的阳极密封功率密度维持在约1.5μW/ cm 2以下来消除阳极密封故障。 在每个电解质板的阴极侧和相邻的互连件之间施加气密密封,使得阳极和阴极密封件在板的相对侧上径向偏移。 调节电极和偏移密封的组合在消除阳极密封故障方面特别有效。