专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08114775B2 Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers 有权
标题翻译：用于具有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物
公开(公告)号：US08114775B2
公开(公告)日：2012-02-14
申请号：US12352700
申请日：2009-01-13
申请人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo , Steven Masami Aragaki , Robin Edward Richards
发明人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo , Steven Masami Aragaki , Robin Edward Richards
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/02074 , H01L21/3212 , H01L21/32125
摘要： A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.
摘要翻译：化学机械抛光组合物包含1）水，2）任选的研磨材料，3）氧化剂，优选每种型氧化剂，4）少量可溶性金属离子氧化剂/抛光促进剂，金属离子抛光促进剂与颗粒结合，例如磨料颗粒或两者; 和5）选自a）少量螯合剂中的至少一种，b）少量的二羟基烯醇化合物，和c）少量的有机促进剂。少于800ppm，优选在约100ppm和500ppm之间的抗坏血酸是优选的二羟基烯醇化合物。抛光组合物和方法对于在集成电路中发现的基本上所有的金属和金属化合物都是有用的，但对钨尤其有用。本发明还涉及表面改性的胶体研磨抛光组合物以及使用这些组合物，特别是用于化学机械平面化的相关方法，其中浆料包含低水平的螯合自由基猝灭剂，非螯合自由基猝灭剂或二者。

2. 发明授权

US07476620B2 Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers 有权
标题翻译：用于具有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物
公开(公告)号：US07476620B2
公开(公告)日：2009-01-13
申请号：US11387934
申请日：2006-03-24
申请人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo , Steven Masami Aragaki , Robin Edward Richards
发明人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo , Steven Masami Aragaki , Robin Edward Richards
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/02074 , H01L21/3212 , H01L21/32125
摘要： A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.
摘要翻译：化学机械抛光组合物包含1）水，2）任选的研磨材料，3）氧化剂，优选每种型氧化剂，4）少量可溶性金属离子氧化剂/抛光促进剂，金属离子抛光促进剂与颗粒结合，例如磨料颗粒或两者; 和5）选自a）少量螯合剂中的至少一种，b）少量的二羟基烯醇化合物，和c）少量的有机促进剂。少于800ppm，优选在约100ppm和500ppm之间的抗坏血酸是优选的二羟基烯醇化合物。抛光组合物和方法对于在集成电路中发现的基本上所有的金属和金属化合物都是有用的，但对钨尤其有用。本发明还涉及表面改性的胶体研磨抛光组合物以及使用这些组合物，特别是用于化学机械平面化的相关方法，其中浆料包含低水平的螯合自由基猝灭剂，非螯合自由基猝灭剂或二者。

3. 发明授权

US07351662B2 Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization 失效
标题翻译：在化学机械平面化期间催化介电膜去除速率的组成和相关方法
公开(公告)号：US07351662B2
公开(公告)日：2008-04-01
申请号：US11233110
申请日：2005-09-22
申请人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo, II , Robin Edward Richards , Timothy Frederick Compton
发明人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo, II , Robin Edward Richards , Timothy Frederick Compton
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , B24B37/044 , C09G1/02 , C09K3/1463
摘要： A low solids-content slurry for polishing (e.g., chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.
摘要翻译：描述了一种用于抛光（例如化学机械平面化）的含固体含量低的浆料，其包含电介质和使用该浆料的相关方法。浆料和相关方法在抛光过程中提供高电介质的去除速率，即使浆料具有低的固体含量。该浆料包括碳酸氢盐，其作为用于在抛光这些基材期间提高介电膜的去除速率的催化剂。

4. 发明授权

US06979252B1 Low defectivity product slurry for CMP and associated production method 失效
标题翻译：低缺陷性产品浆料用于CMP和相关生产方法
公开(公告)号：US06979252B1
公开(公告)日：2005-12-27
申请号：US11030503
申请日：2005-01-06
申请人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo, II , Rajat Kapoor , Tara Ranae Keefover , Robin Edward Richards
发明人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo, II , Rajat Kapoor , Tara Ranae Keefover , Robin Edward Richards
IPC分类号： B24B1/00 , B24B37/04 , C09G1/02 , H01L21/3105
CPC分类号： C09G1/02 , B24B37/044 , H01L21/31053
摘要： A low defectivity colloidal silica-based product slurry for use in chemical mechanical planarization (CMP) and an associated production method are described. The product slurry is produced using centrifugation of and optionally with addition of a surfactant to a starting colloidal silica (which can be a commercially available colloidal silica). The product slurry has substantially lower levels of soluble polymeric silicates than does the starting colloidal silica and affords lower defectivity levels when used in a slurry for CMP processing than does the starting colloidal silica.
摘要翻译：描述了用于化学机械平面化（CMP）的低缺陷性胶体二氧化硅基产物浆料和相关的生产方法。产物浆料通过离心和任选加入表面活性剂至起始胶态二氧化硅（其可以是可商购的胶体二氧化硅）来制备。与起始胶体二氧化硅相比，产物浆料在起始胶态二氧化硅中的可溶性聚合物硅酸盐含量基本上较低，并且在用于CMP加工的浆料中时比起始胶体二氧化硅提供较低的缺陷率水平。

5. 发明申请

US20090308836A1 DIHYDROXY ENOL COMPOUNDS USED IN CHEMICAL MECHANICAL POLISHING COMPOSITIONS HAVING METAL ION OXIDIZERS 有权
标题翻译：具有金属氧化物的化学机械抛光组合物中使用的二氢氧化合物
公开(公告)号：US20090308836A1
公开(公告)日：2009-12-17
申请号：US12352700
申请日：2009-01-13
申请人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo , Steven Masaml Aragaki , Robin Edward Richards
发明人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo , Steven Masaml Aragaki , Robin Edward Richards
IPC分类号： B44C1/22 , C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/02074 , H01L21/3212 , H01L21/32125
摘要： A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.
摘要翻译：化学机械抛光组合物包含1）水，2）任选的研磨材料，3）氧化剂，优选每种型氧化剂，4）少量可溶性金属离子氧化剂/抛光促进剂，金属离子抛光促进剂与颗粒结合，例如磨料颗粒或两者; 和5）选自a）少量螯合剂中的至少一种，b）少量的二羟基烯醇化合物，和c）少量的有机促进剂。少于800ppm，优选在约100ppm和500ppm之间的抗坏血酸是优选的二羟基烯醇化合物。抛光组合物和方法对于在集成电路中发现的基本上所有的金属和金属化合物都是有用的，但对钨尤其有用。本发明还涉及表面改性的胶体研磨抛光组合物以及使用这些组合物，特别是用于化学机械平面化的相关方法，其中浆料包含低水平的螯合自由基猝灭剂，非螯合自由基猝灭剂或二者。

6. 发明授权

US07513920B2 Free radical-forming activator attached to solid and used to enhance CMP formulations 有权
标题翻译：自由基形成活化剂连接到固体上并用于增强CMP配方
公开(公告)号：US07513920B2
公开(公告)日：2009-04-07
申请号：US11264027
申请日：2005-11-02
申请人： Junaid Ahmed Siddiqui , Robert J. Small , Daniel Hernandez Castillo
发明人： Junaid Ahmed Siddiqui , Robert J. Small , Daniel Hernandez Castillo
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： C09G1/02 , C03C19/00 , C09K3/1463 , C23F3/04 , G11B5/3163 , G11B5/3169 , H01L21/3212
摘要： A CMP composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Surprisingly, as little as 0.2 ppm and 12 ppm of activator is useful, if the activator-containing particles are suspended in the fluid as a slurry. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.
摘要翻译：一种CMP组合物，其具有：包含水和至少一种在与活化剂接触时产生自由基的氧化化合物的流体; 以及多个具有表面并且包含至少一种选自Cu，Fe，Mn，Ti或其混合物的离子或化合物的活化剂的颗粒，其中所述表面的至少一部分包含稳定剂。优选的活化剂选自B，W，Al和P的无机含氧化合物，例如硼酸盐，钨酸盐，铝酸盐和磷酸盐。活化剂优选为Cu或Fe的离子。令人惊奇的是，只要0.2ppm和12ppm的活化剂是有用的，如果含活化剂的颗粒作为浆料悬浮在流体中。有利地，某些有机酸，特别是二羟基烯醇酸的含量小于约4000ppm。有利地，在颗粒已经用稳定剂涂覆之后，将活化剂涂覆到磨料颗粒上。

7. 发明申请

US20090250656A1 Free Radical-Forming Activator Attached to Solid and Used to Enhance CMP Formulations 审中-公开
标题翻译：固体自由基形成活化剂，用于增强CMP配方
公开(公告)号：US20090250656A1
公开(公告)日：2009-10-08
申请号：US12419625
申请日：2009-04-07
申请人： Junaid Ahmed Siddiqui , Robert J. Small , Daniel Hernandez Castillo
发明人： Junaid Ahmed Siddiqui , Robert J. Small , Daniel Hernandez Castillo
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C03C19/00 , C09K3/1463 , C23F3/04 , G11B5/3163 , G11B5/3169 , H01L21/3212
摘要： A chemical mechanical polishing composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.
摘要翻译：一种化学机械抛光组合物，其具有：包含水和至少一种当与活化剂接触时产生自由基的氧化化合物的流体; 以及多个具有表面并且包含至少一种选自Cu，Fe，Mn，Ti或其混合物的离子或化合物的活化剂的颗粒，其中所述表面的至少一部分包含稳定剂。优选的活化剂选自B，W，Al和P的无机含氧化合物，例如硼酸盐，钨酸盐，铝酸盐和磷酸盐。活化剂优选为Cu或Fe的离子。有利地，某些有机酸，特别是二羟基烯醇酸的含量小于约4000ppm。有利地，在颗粒已经用稳定剂涂覆之后，将活化剂涂覆到磨料颗粒上。

8. 发明授权

US07153335B2 Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole 有权
标题翻译：天门冬氨酸/甲苯基三唑化学机械平面化的可调组合物和方法
公开(公告)号：US07153335B2
公开(公告)日：2006-12-26
申请号：US10683232
申请日：2003-10-10
申请人： Junaid Ahmed Siddiqui , Timothy Frederick Compton , Bin Hu , Robin Edward Richards
发明人： Junaid Ahmed Siddiqui , Timothy Frederick Compton , Bin Hu , Robin Edward Richards
IPC分类号： C09G1/02 , C09G1/04 , C09K13/14 , B24B1/00
CPC分类号： C09G1/02
摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.
摘要翻译：描述了用于化学机械平面化（或其他抛光）的组合物和相关方法，其在铜CMP中提供高的钽到铜选择性，并且其可调谐（相对于抛光性能）。该组合物包含磨料和N-酰基-N-烃氧烷基天冬氨酸化合物和/或甲苯基三唑衍生物。

9. 发明授权

US07691287B2 Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization 有权
标题翻译：将配体和有机金属化合物固定在二氧化硅表面上的方法及其在化学机械平面化中的应用
公开(公告)号：US07691287B2
公开(公告)日：2010-04-06
申请号：US11700526
申请日：2007-01-31
申请人： Junaid Ahmed Siddiqui , Timothy Frederick Compton , Robin Edward Richards
发明人： Junaid Ahmed Siddiqui , Timothy Frederick Compton , Robin Edward Richards
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , B24B37/044
摘要： A method of polishing a substrate with a polishing composition comprising an oxidizing agent and abrasive particles having a surface, said surface of the abrasive particles being at least partially modified with 1) at least one stabilizer compound comprising aluminum, boron, tungsten, or both, said stabilizer compound being bound via a covalent bond to said abrasive particles, and 2) an organic chelating compound, said chelating compound being bound via a covalent bond to said stabilizer compound. The organic chelating compounds include one or more of 1) a nitrogen-containing moiety and between one and five other polar groups; 2) a sulfur-containing moiety and between one and five other polar groups; and 3) between two and five polar groups selected from carboxylic acid groups or salts thereof and hydroxyl groups.
摘要翻译：一种用包含氧化剂和具有表面的磨料颗粒的抛光组合物抛光基材的方法，所述磨料颗粒的所述表面至少部分地用1）至少一种包含铝，硼，钨或两者的稳定剂化合物进行改性，所述稳定剂化合物通过共价键与所述研磨颗粒结合，和2）有机螯合化合物，所述螯合化合物通过共价键与所述稳定剂化合物结合。有机螯合化合物包括1）含氮部分和1至5个其它极性基团中的一种或多种; 2）含硫部分和1至5个其它极性基团; 和3）选自羧酸基团或其盐和羟基的两个和五个极性基团之间。

10. 发明申请

US20080182485A1 Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization 有权
标题翻译：将配体和有机金属化合物固定在二氧化硅表面上的方法及其在化学机械平面化中的应用
公开(公告)号：US20080182485A1
公开(公告)日：2008-07-31
申请号：US11700526
申请日：2007-01-31
申请人： Junaid Ahmed Siddiqui , Timothy Frederick Compton , Robin Edward Richards
发明人： Junaid Ahmed Siddiqui , Timothy Frederick Compton , Robin Edward Richards
IPC分类号： C09K3/00 , B24B1/00
CPC分类号： C09G1/02 , B24B37/044
摘要： A method of polishing a substrate with a polishing composition comprising an oxidizing agent and abrasive particles having a surface, said surface of the abrasive particles being at least partially modified with 1) at least one stabilizer compound comprising aluminum, boron, tungsten, or both, said stabilizer compound being bound via a covalent bond to said abrasive particles, and 2) an organic chelating compound, said chelating compound being bound via a covalent bond to said stabilizer compound. The organic chelating compounds include one or more of 1) a nitrogen-containing moiety and between one and five other polar groups; 2) a sulfur-containing moiety and between one and five other polar groups; and 3) between two and five polar groups selected from carboxylic acid groups or salts thereof and hydroxyl groups.
摘要翻译：一种用包含氧化剂和具有表面的磨料颗粒的抛光组合物抛光基材的方法，所述磨料颗粒的所述表面至少部分地用1）至少一种包含铝，硼，钨或两者的稳定剂化合物进行改性，所述稳定剂化合物通过共价键与所述研磨颗粒结合，和2）有机螯合化合物，所述螯合化合物通过共价键与所述稳定剂化合物结合。有机螯合化合物包括1）含氮部分和1至5个其它极性基团中的一种或多种; 2）含硫部分和1至5个其它极性基团; 和3）选自羧酸基团或其盐和羟基的两个和五个极性基团之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式