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1. 发明申请

US20050020071A1 Method and apparatus for cleaning and method and apparatus for etching 审中-公开
标题翻译：清洗方法和设备以及蚀刻方法和设备
公开(公告)号：US20050020071A1
公开(公告)日：2005-01-27
申请号：US10485721
申请日：2001-07-31
申请人： Jun Sonobe , Yoshikuni Koruda , Regis Zils , Minoru Ino , Takako Kimura , Yukinobu Nishikawa
发明人： Jun Sonobe , Yoshikuni Koruda , Regis Zils , Minoru Ino , Takako Kimura , Yukinobu Nishikawa
IPC分类号： C23C16/44 , C23C16/448 , H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/4488 , H01L21/67063
摘要： A cleaning apparatus (30) is connected to a treating chamber (12) of a CVD apparatus (10) for forming a silicon film. The cleaning apparatus (30) has a first, a second, and a third gas sources (32, 34, 36) and a chlorine gas, a fluorine gas, and an inert gas are introduced from the gas sources through FMC (38a, 38b, 38c), respectively, with flow rates controlled independently from one another. Those gases are gathered at a pipe (42) and mixed into a mixed gas. The mixed gas is passed through a heated reactor (44) such as a heat exchanger to thereby react the chlorine gas with the fluorine gas and form a formed gas containing fluorinated chlorine gas such as CIF3. The formed gas is supplied to the treating chamber (12) through a cooler (46), an analyzer (48) and a buffer (54).
摘要翻译：清洁装置（30）连接到用于形成硅膜的CVD装置（10）的处理室（12）。清洁装置（30）具有第一，第二和第三气体源（32,34,36），氯气，氟气和惰性气体通过FMC（38a，38b）从气体源引入，38c），流量彼此独立地控制。这些气体聚集在管道（42）上并混合成混合气体。混合气体通过热交换器等加热反应器（44），使氯气与氟气反应，形成含有氟化氯气的成形气体，例如CIF3。形成的气体通过冷却器（46），分析器（48）和缓冲器（54）供应到处理室（12）。

2. 发明申请

US20050082002A1 Method of cleaning a film-forming apparatus and film-forming apparatus 审中-公开
标题翻译：清洗成膜装置和成膜装置的方法
公开(公告)号：US20050082002A1
公开(公告)日：2005-04-21
申请号：US10927097
申请日：2004-08-27
申请人： Yuusuke Sato , Naoki Tamaoki , Satoko Seta , Regis Zils , Jun Sonobe , Takako Kimura , Kayo Momoda
发明人： Yuusuke Sato , Naoki Tamaoki , Satoko Seta , Regis Zils , Jun Sonobe , Takako Kimura , Kayo Momoda
IPC分类号： B08B7/00 , C23C16/44 , B08B9/00 , C23F1/00
CPC分类号： B08B7/04 , B08B7/00 , C23C16/4405
摘要： A method of cleaning a film-forming apparatus to remove at least a part of a silicon-based material deposited on a constituent member of the film-forming apparatus after used to form thin films includes introducing a first-gas including fluorine gas and a second gas including nitrogen monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide, and the silicon-based material includes silicon nitride.
摘要翻译：在形成薄膜之后，清洗膜形成装置以去除沉积在成膜装置的构成部件上的至少一部分硅基材料的方法包括：引入包含氟气的第一气体和第二气体包括一氧化氮气体的气体进入成膜装置，并加热构成部件。构成构件包括石英或碳化硅，硅基材料包括氮化硅。

3. 发明申请

US20050161321A1 Apparatus for the generation and supply of fluorine gas 审中-公开
标题翻译：用于生产和供应氟气的设备
公开(公告)号：US20050161321A1
公开(公告)日：2005-07-28
申请号：US10500406
申请日：2002-12-20
申请人： Colin Kennedy , Takako Kimura , Minoru Ino , Jun Sonobe
发明人： Colin Kennedy , Takako Kimura , Minoru Ino , Jun Sonobe
IPC分类号： B01J4/00 , C23C16/44 , C25B1/24 , C25B15/00 , C25B15/02 , H01L21/02 , H01L21/302
CPC分类号： C25B15/00 , C23C16/4405 , C25B1/245
摘要： To provide an apparatus for fluorine gas generation and supply that is disposed in the gas supply system of a semiconductor processing system and that in the event of abnormalities in the apparatus enables back up by a safe and inexpensive structure. An apparatus 30 for the generation and supply of gas is disposed in the gas supply system of a semiconductor processing system. This apparatus 30 contains an electrolytic cell 34 that generates fluorine gas and a cylinder 62 that holds a substitute gas selected from the group consisting of nitrogen fluoride, sulfur fluoride, and chlorine fluoride. The electrolytic cell 34 and cylinder 62 are connected to a gas switching section 56 that selectively supplies a gas utilization section with fluorine gas from the electrolytic cell 34 or with substitute gas from the cylinder 62. A controller 40 controls the gas switching section 56 in such a manner that, upon detection of an abnormal state at the electrolytic cell 34 by an electrolytic cell detector 36, substitute gas is supplied from the cylinder 62 to the gas utilization section.
摘要翻译：为了提供一种设置在半导体处理系统的气体供给系统中的氟气生成和供给装置，并且在设备的异常情况下可以通过安全且廉价的结构进行备份。在半导体处理系统的气体供给系统中设置有用于产生和供应气体的装置30。该装置30包含产生氟气的电解槽34和保持选自氮氟化物，氟化硫和氯氟化物的替代气体的气缸62。电解槽34和气缸62连接到气体切换部分56，气体切换部分56选择性地向气体利用部分供应来自电解槽34的氟气或来自气缸62的替代气体。控制器40以这样一种方式控制气体切换部分56，当电解槽检测器36检测到电解槽34处的异常状态时，替代气体从气缸62供应到气体利用部分。

4. 发明授权

US07942974B2 Method of cleaning a film-forming apparatus 有权
标题翻译：清洗成膜装置的方法
公开(公告)号：US07942974B2
公开(公告)日：2011-05-17
申请号：US11234105
申请日：2005-09-26
申请人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
发明人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
IPC分类号： B08B9/08
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
摘要翻译：在形成薄膜之后，清洗成膜装置以去除沉积在成膜装置的构成部件上的硅基材料的方法包括：引入包含氟气的第一气体和包括一氧化碳气体的第二气体进入成膜装置，并加热构成构件。构成构件包括石英或碳化硅，硅基材料包括氮化硅，或者构成构件包括碳化硅，硅基材料包括氧化硅。

5. 发明申请

US20060065289A1 Method of cleaning a film-forming apparatus and film-forming apparatus 有权
标题翻译：清洗成膜装置和成膜装置的方法
公开(公告)号：US20060065289A1
公开(公告)日：2006-03-30
申请号：US11234105
申请日：2005-09-26
申请人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
发明人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
IPC分类号： C23G1/00 , C23C16/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
摘要翻译：在形成薄膜之后，清洗成膜装置以去除沉积在成膜装置的构成部件上的硅基材料的方法包括：引入包含氟气的第一气体和包括一氧化碳气体的第二气体进入成膜装置，并加热构成构件。构成构件包括石英或碳化硅，硅基材料包括氮化硅，或者构成构件包括碳化硅，硅基材料包括氧化硅。

6. 发明申请

US20100012153A1 METHOD OF CLEANING FILM FORMING APPARATUS AND FILM FORMING APPARATUS 审中-公开
标题翻译：清洗成膜装置和薄膜成膜装置的方法
公开(公告)号：US20100012153A1
公开(公告)日：2010-01-21
申请号：US12374364
申请日：2007-07-26
申请人： Takamitsu Shigemoto , Jun Sonobe
发明人： Takamitsu Shigemoto , Jun Sonobe
IPC分类号： B08B9/00 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/34
摘要： To provide a method of cleaning a film forming apparatus capable of uniformly removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium adhering to a wall of a processing chamber of the film forming apparatus at a high etching rate without use of plasma. A method of cleaning a film forming apparatus for removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium deposited on a processing chamber of the film forming apparatus after it is used for forming a thin film made of tantalum nitride, titanium nitride, tantalum, or titanium, the cleaning method comprising: a step of supplying process gas containing fluorine gas into the processing chamber of the film forming apparatus; and a step of heating the processing chamber.
摘要翻译：提供一种能够在不使用等离子体的情况下以高蚀刻速率均匀地除去附着在成膜装置的处理室的壁上的含有氮化钽，氮化钛，钽或钛的沉积物的清洗成膜装置的方法。一种清洗成膜装置的方法，该成膜装置用于除去沉积在成膜装置的处理室上的含有氮化钽，氮化钛，钽或钛的沉积物，用于形成由氮化钽，氮化钛，钽或钛，所述清洗方法包括：将含有氟气的处理气体供给到所述成膜设备的处理室中的步骤; 以及加热处理室的步骤。

7. 发明申请

US20090182180A1 LOW PRESSURE ACETYLENE STORAGE 有权
标题翻译：低压乙烯储存
公开(公告)号：US20090182180A1
公开(公告)日：2009-07-16
申请号：US12352432
申请日：2009-01-12
申请人： Shih-Wen Huang , Jun Sonobe
发明人： Shih-Wen Huang , Jun Sonobe
IPC分类号： C07C11/24 , B01D53/02
CPC分类号： F17C11/002 , B01D53/04 , B01D2253/102 , B01D2257/7022
摘要： Methods and apparatus for the storage of acetylene include providing an acetylene storage device which has an interior volume. A carbonaceous adsorbent is disposed in the interior volume of the storage device, and acetylene is introduced into the storage device to be reversibly adsorbed by the carbonaceous adsorbent. A pressure of less than 2 bar is maintained in the storage device.
摘要翻译：用于储存乙炔的方法和装置包括提供具有内部体积的乙炔储存装置。碳质吸附剂设置在储存装置的内部容积中，并且乙炔被引入储存装置中以被碳质吸附剂可逆地吸附。存储装置中保持小于2巴的压力。

8. 发明授权

US08119853B2 Low pressure acetylene storage 有权
标题翻译：低压乙炔储存
公开(公告)号：US08119853B2
公开(公告)日：2012-02-21
申请号：US12352432
申请日：2009-01-12
申请人： Shih-Wen Huang , Jun Sonobe
发明人： Shih-Wen Huang , Jun Sonobe
IPC分类号： B65B1/04
CPC分类号： F17C11/002 , B01D53/04 , B01D2253/102 , B01D2257/7022
摘要： Methods and apparatus for the storage of acetylene include providing an acetylene storage device which has an interior volume. A carbonaceous adsorbent is disposed in the interior volume of the storage device, and acetylene is introduced into the storage device to be reversibly adsorbed by the carbonaceous adsorbent. A pressure of less than 2 bar is maintained in the storage device.
摘要翻译：用于储存乙炔的方法和装置包括提供具有内部体积的乙炔储存装置。碳质吸附剂设置在储存装置的内部容积中，并且乙炔被引入储存装置中以被碳质吸附剂可逆地吸附。存储装置中保持小于2巴的压力。

9. 发明授权

US08679259B2 Substrate processing apparatus, method of manufacturing semiconductor device and method of cleaning processing vessel 有权
标题翻译：基板加工装置，半导体装置的制造方法以及清洗处理容器的方法
公开(公告)号：US08679259B2
公开(公告)日：2014-03-25
申请号：US13089988
申请日：2011-04-19
申请人： Kenji Kameda , Jun Sonobe , Yudai Tadaki
发明人： Kenji Kameda , Jun Sonobe , Yudai Tadaki
IPC分类号： B08B9/00
CPC分类号： C23C16/4405 , H01L21/02271
摘要： When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.
摘要翻译：当通过向清洗气体中加入一氧化氮（NO）气体在处理室中进行干洗处理时，便于处理，并提高清洗性能。基板处理装置包括：处理基板的处理容器;配置为将含有氟原子的气体与NO气体预混合并将预混合气体供给到处理容器中的第一清洗气体供给系统;以及第二清洗气体供应系统安装在与第一清洁气体供应系统之间并且被配置为将含氟气体供应到处理容器中。

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