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1. 发明申请

US20110259370A1 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING PROCESSING VESSEL 有权
标题翻译：基板加工装置，制造半导体装置的方法和清洁处理容器的方法
公开(公告)号：US20110259370A1
公开(公告)日：2011-10-27
申请号：US13089988
申请日：2011-04-19
申请人： Kenji KAMEDA , Jun SONOBE , Yudai TADAKI
发明人： Kenji KAMEDA , Jun SONOBE , Yudai TADAKI
IPC分类号： B08B5/00
CPC分类号： C23C16/4405 , H01L21/02271
摘要： When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.
摘要翻译：当通过向清洗气体中加入一氧化氮（NO）气体在处理室中进行干洗处理时，便于处理，并提高清洗性能。基板处理装置包括：处理基板的处理容器;配置为将含有氟原子的气体与NO气体预混合并将预混合气体供给到处理容器中的第一清洗气体供给系统;以及第二清洗气体供应系统安装在与第一清洁气体供应系统之间并且被配置为将含氟气体供应到处理容器中。

2. 发明授权

US07942974B2 Method of cleaning a film-forming apparatus 有权
标题翻译：清洗成膜装置的方法
公开(公告)号：US07942974B2
公开(公告)日：2011-05-17
申请号：US11234105
申请日：2005-09-26
申请人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
发明人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
IPC分类号： B08B9/08
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
摘要翻译：在形成薄膜之后，清洗成膜装置以去除沉积在成膜装置的构成部件上的硅基材料的方法包括：引入包含氟气的第一气体和包括一氧化碳气体的第二气体进入成膜装置，并加热构成构件。构成构件包括石英或碳化硅，硅基材料包括氮化硅，或者构成构件包括碳化硅，硅基材料包括氧化硅。

3. 发明申请

US20100012153A1 METHOD OF CLEANING FILM FORMING APPARATUS AND FILM FORMING APPARATUS 审中-公开
标题翻译：清洗成膜装置和薄膜成膜装置的方法
公开(公告)号：US20100012153A1
公开(公告)日：2010-01-21
申请号：US12374364
申请日：2007-07-26
申请人： Takamitsu Shigemoto , Jun Sonobe
发明人： Takamitsu Shigemoto , Jun Sonobe
IPC分类号： B08B9/00 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/34
摘要： To provide a method of cleaning a film forming apparatus capable of uniformly removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium adhering to a wall of a processing chamber of the film forming apparatus at a high etching rate without use of plasma. A method of cleaning a film forming apparatus for removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium deposited on a processing chamber of the film forming apparatus after it is used for forming a thin film made of tantalum nitride, titanium nitride, tantalum, or titanium, the cleaning method comprising: a step of supplying process gas containing fluorine gas into the processing chamber of the film forming apparatus; and a step of heating the processing chamber.
摘要翻译：提供一种能够在不使用等离子体的情况下以高蚀刻速率均匀地除去附着在成膜装置的处理室的壁上的含有氮化钽，氮化钛，钽或钛的沉积物的清洗成膜装置的方法。一种清洗成膜装置的方法，该成膜装置用于除去沉积在成膜装置的处理室上的含有氮化钽，氮化钛，钽或钛的沉积物，用于形成由氮化钽，氮化钛，钽或钛，所述清洗方法包括：将含有氟气的处理气体供给到所述成膜设备的处理室中的步骤; 以及加热处理室的步骤。

4. 发明申请

US20080236483A1 METHOD FOR LOW TEMPERATURE THERMAL CLEANING 审中-公开
标题翻译：低温热清洁方法
公开(公告)号：US20080236483A1
公开(公告)日：2008-10-02
申请号：US12023679
申请日：2008-01-31
申请人： Jun SONOBE , Yudai TADAKI , Takamitsu SHIGEMOTO , Jean-Marc GIRARD
发明人： Jun SONOBE , Yudai TADAKI , Takamitsu SHIGEMOTO , Jean-Marc GIRARD
IPC分类号： B05C11/00 , B08B3/00
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035
摘要： Methods and apparatus for cleaning undesired substances from a surface in a semiconductor processing chamber. A gas mixture containing a fluorine source and an oxygen source is pre-treated to contain active fluorine species. The pre-treated mixture is stored for a time in a gas storage device, and then introduced to a semiconductor processing chamber. Prior to introduction of the pre-treated gas, the temperature in the chamber is lowered to a temperature equal to or lower than the normal operating temperature. Undesired substances are removed or cleaned through chemical reaction with the pre-treated gas mixture, without the generation of a plasma or a high temperature condition in the chamber.
摘要翻译：用于从半导体处理室中的表面清除不需要的物质的方法和装置。包含氟源和氧源的气体混合物被预处理以含有活性氟物质。将预处理的混合物在气体存储装置中储存一段时间，然后引入半导体处理室。在引入预处理气体之前，将室内的温度降低至等于或低于正常工作温度的温度。通过与预处理的气体混合物的化学反应除去或清洁不期望的物质，而不会在室中产生等离子体或高温条件。

5. 发明申请

US20060065289A1 Method of cleaning a film-forming apparatus and film-forming apparatus 有权
标题翻译：清洗成膜装置和成膜装置的方法
公开(公告)号：US20060065289A1
公开(公告)日：2006-03-30
申请号：US11234105
申请日：2005-09-26
申请人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
发明人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
IPC分类号： C23G1/00 , C23C16/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
摘要翻译：在形成薄膜之后，清洗成膜装置以去除沉积在成膜装置的构成部件上的硅基材料的方法包括：引入包含氟气的第一气体和包括一氧化碳气体的第二气体进入成膜装置，并加热构成构件。构成构件包括石英或碳化硅，硅基材料包括氮化硅，或者构成构件包括碳化硅，硅基材料包括氧化硅。

6. 发明申请

US20050020071A1 Method and apparatus for cleaning and method and apparatus for etching 审中-公开
标题翻译：清洗方法和设备以及蚀刻方法和设备
公开(公告)号：US20050020071A1
公开(公告)日：2005-01-27
申请号：US10485721
申请日：2001-07-31
申请人： Jun Sonobe , Yoshikuni Koruda , Regis Zils , Minoru Ino , Takako Kimura , Yukinobu Nishikawa
发明人： Jun Sonobe , Yoshikuni Koruda , Regis Zils , Minoru Ino , Takako Kimura , Yukinobu Nishikawa
IPC分类号： C23C16/44 , C23C16/448 , H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/4488 , H01L21/67063
摘要： A cleaning apparatus (30) is connected to a treating chamber (12) of a CVD apparatus (10) for forming a silicon film. The cleaning apparatus (30) has a first, a second, and a third gas sources (32, 34, 36) and a chlorine gas, a fluorine gas, and an inert gas are introduced from the gas sources through FMC (38a, 38b, 38c), respectively, with flow rates controlled independently from one another. Those gases are gathered at a pipe (42) and mixed into a mixed gas. The mixed gas is passed through a heated reactor (44) such as a heat exchanger to thereby react the chlorine gas with the fluorine gas and form a formed gas containing fluorinated chlorine gas such as CIF3. The formed gas is supplied to the treating chamber (12) through a cooler (46), an analyzer (48) and a buffer (54).
摘要翻译：清洁装置（30）连接到用于形成硅膜的CVD装置（10）的处理室（12）。清洁装置（30）具有第一，第二和第三气体源（32,34,36），氯气，氟气和惰性气体通过FMC（38a，38b）从气体源引入，38c），流量彼此独立地控制。这些气体聚集在管道（42）上并混合成混合气体。混合气体通过热交换器等加热反应器（44），使氯气与氟气反应，形成含有氟化氯气的成形气体，例如CIF3。形成的气体通过冷却器（46），分析器（48）和缓冲器（54）供应到处理室（12）。

7. 发明授权

US08119853B2 Low pressure acetylene storage 有权
标题翻译：低压乙炔储存
公开(公告)号：US08119853B2
公开(公告)日：2012-02-21
申请号：US12352432
申请日：2009-01-12
申请人： Shih-Wen Huang , Jun Sonobe
发明人： Shih-Wen Huang , Jun Sonobe
IPC分类号： B65B1/04
CPC分类号： F17C11/002 , B01D53/04 , B01D2253/102 , B01D2257/7022
摘要： Methods and apparatus for the storage of acetylene include providing an acetylene storage device which has an interior volume. A carbonaceous adsorbent is disposed in the interior volume of the storage device, and acetylene is introduced into the storage device to be reversibly adsorbed by the carbonaceous adsorbent. A pressure of less than 2 bar is maintained in the storage device.
摘要翻译：用于储存乙炔的方法和装置包括提供具有内部体积的乙炔储存装置。碳质吸附剂设置在储存装置的内部容积中，并且乙炔被引入储存装置中以被碳质吸附剂可逆地吸附。存储装置中保持小于2巴的压力。

8. 发明申请

US20110000508A1 METHOD OF REMOVING RESIDUAL FLUORINE FROM DEPOSITION CHAMBER 审中-公开
标题翻译：从沉积室中除去残留氟的方法
公开(公告)号：US20110000508A1
公开(公告)日：2011-01-06
申请号：US12827128
申请日：2010-06-30
申请人： Jun SONOBE
发明人： Jun SONOBE
IPC分类号： B08B9/00
CPC分类号： C23C16/4405 , B08B7/00
摘要： Disclosed are methods to remove residual fluorine left in a chamber surface without the use of a plasma device or temperature elevation. The disclosed methods may permit the next step in the deposition process to occur more quickly.
摘要翻译：公开了在不使用等离子体装置或温度升高的情况下除去残留在室表面中的残余氟的方法。所公开的方法可以允许沉积过程中的下一步骤更快地发生。

9. 发明申请

US20050082002A1 Method of cleaning a film-forming apparatus and film-forming apparatus 审中-公开
标题翻译：清洗成膜装置和成膜装置的方法
公开(公告)号：US20050082002A1
公开(公告)日：2005-04-21
申请号：US10927097
申请日：2004-08-27
申请人： Yuusuke Sato , Naoki Tamaoki , Satoko Seta , Regis Zils , Jun Sonobe , Takako Kimura , Kayo Momoda
发明人： Yuusuke Sato , Naoki Tamaoki , Satoko Seta , Regis Zils , Jun Sonobe , Takako Kimura , Kayo Momoda
IPC分类号： B08B7/00 , C23C16/44 , B08B9/00 , C23F1/00
CPC分类号： B08B7/04 , B08B7/00 , C23C16/4405
摘要： A method of cleaning a film-forming apparatus to remove at least a part of a silicon-based material deposited on a constituent member of the film-forming apparatus after used to form thin films includes introducing a first-gas including fluorine gas and a second gas including nitrogen monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide, and the silicon-based material includes silicon nitride.
摘要翻译：在形成薄膜之后，清洗膜形成装置以去除沉积在成膜装置的构成部件上的至少一部分硅基材料的方法包括：引入包含氟气的第一气体和第二气体包括一氧化氮气体的气体进入成膜装置，并加热构成部件。构成构件包括石英或碳化硅，硅基材料包括氮化硅。

10. 发明授权

US08679259B2 Substrate processing apparatus, method of manufacturing semiconductor device and method of cleaning processing vessel 有权
标题翻译：基板加工装置，半导体装置的制造方法以及清洗处理容器的方法
公开(公告)号：US08679259B2
公开(公告)日：2014-03-25
申请号：US13089988
申请日：2011-04-19
申请人： Kenji Kameda , Jun Sonobe , Yudai Tadaki
发明人： Kenji Kameda , Jun Sonobe , Yudai Tadaki
IPC分类号： B08B9/00
CPC分类号： C23C16/4405 , H01L21/02271
摘要： When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.
摘要翻译：当通过向清洗气体中加入一氧化氮（NO）气体在处理室中进行干洗处理时，便于处理，并提高清洗性能。基板处理装置包括：处理基板的处理容器;配置为将含有氟原子的气体与NO气体预混合并将预混合气体供给到处理容器中的第一清洗气体供给系统;以及第二清洗气体供应系统安装在与第一清洁气体供应系统之间并且被配置为将含氟气体供应到处理容器中。

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