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1. 发明申请

US20080264072A1 LIQUEFIED GAS SUPPLY DEVICE AND METHOD 审中-公开
标题翻译：液化气供应装置及方法
公开(公告)号：US20080264072A1
公开(公告)日：2008-10-30
申请号：US12051606
申请日：2008-03-19
申请人： Shinji MIYOSHI , Minoru Ino , Kazuo Yokogi
发明人： Shinji MIYOSHI , Minoru Ino , Kazuo Yokogi
IPC分类号： F17C9/02
CPC分类号： F17C9/02 , F17C13/025 , F17C13/026 , F17C2201/0104 , F17C2201/032 , F17C2201/054 , F17C2221/01 , F17C2221/03 , F17C2223/0153 , F17C2223/033 , F17C2223/043 , F17C2225/0123 , F17C2225/033 , F17C2227/0334 , F17C2250/032 , F17C2250/043 , F17C2250/0631 , F17C2270/0518
摘要： To provide a liquefied gas supply device and supply method that has good operability and a compact structure, and enables stable supply of large flow rates of liquefied gas while managing the consumption amount of liquefied gas promptly in real time. A liquefied gas supply device characterized by having container 1 filled with liquefied gas, load cell 2 for measuring the weight of container 1, halogen lamp unit 3 for heating container 1, and a gas transfer means to transfer gas in the gas-phase section of container1, and arranging halogen lamp unit 3, comprising halogen lamp heater 3a and space 3b for the lamp, and load cell 2 in an integrated structure at bottom section 1a of container 1.
摘要翻译：提供具有良好可操作性和紧凑结构的液化气供应装置和供应方法，并且能够在实时管理液化气消耗量的同时稳定地提供大量液化气流量。一种液化气体供给装置，其特征在于，容纳有液化气体的容器1，用于测量容器1的重量的测压元件2，用于加热容器1的卤素灯单元3，以及气体传递装置，容器1，并且配置卤素灯单元3，其包括用于灯的卤素灯加热器3a和空间3b，以及在集装箱1的底部1a处以一体结构的称重传感器2。

2. 发明申请

US20050161321A1 Apparatus for the generation and supply of fluorine gas 审中-公开
标题翻译：用于生产和供应氟气的设备
公开(公告)号：US20050161321A1
公开(公告)日：2005-07-28
申请号：US10500406
申请日：2002-12-20
申请人： Colin Kennedy , Takako Kimura , Minoru Ino , Jun Sonobe
发明人： Colin Kennedy , Takako Kimura , Minoru Ino , Jun Sonobe
IPC分类号： B01J4/00 , C23C16/44 , C25B1/24 , C25B15/00 , C25B15/02 , H01L21/02 , H01L21/302
CPC分类号： C25B15/00 , C23C16/4405 , C25B1/245
摘要： To provide an apparatus for fluorine gas generation and supply that is disposed in the gas supply system of a semiconductor processing system and that in the event of abnormalities in the apparatus enables back up by a safe and inexpensive structure. An apparatus 30 for the generation and supply of gas is disposed in the gas supply system of a semiconductor processing system. This apparatus 30 contains an electrolytic cell 34 that generates fluorine gas and a cylinder 62 that holds a substitute gas selected from the group consisting of nitrogen fluoride, sulfur fluoride, and chlorine fluoride. The electrolytic cell 34 and cylinder 62 are connected to a gas switching section 56 that selectively supplies a gas utilization section with fluorine gas from the electrolytic cell 34 or with substitute gas from the cylinder 62. A controller 40 controls the gas switching section 56 in such a manner that, upon detection of an abnormal state at the electrolytic cell 34 by an electrolytic cell detector 36, substitute gas is supplied from the cylinder 62 to the gas utilization section.
摘要翻译：为了提供一种设置在半导体处理系统的气体供给系统中的氟气生成和供给装置，并且在设备的异常情况下可以通过安全且廉价的结构进行备份。在半导体处理系统的气体供给系统中设置有用于产生和供应气体的装置30。该装置30包含产生氟气的电解槽34和保持选自氮氟化物，氟化硫和氯氟化物的替代气体的气缸62。电解槽34和气缸62连接到气体切换部分56，气体切换部分56选择性地向气体利用部分供应来自电解槽34的氟气或来自气缸62的替代气体。控制器40以这样一种方式控制气体切换部分56，当电解槽检测器36检测到电解槽34处的异常状态时，替代气体从气缸62供应到气体利用部分。

3. 发明申请

US20050020071A1 Method and apparatus for cleaning and method and apparatus for etching 审中-公开
标题翻译：清洗方法和设备以及蚀刻方法和设备
公开(公告)号：US20050020071A1
公开(公告)日：2005-01-27
申请号：US10485721
申请日：2001-07-31
申请人： Jun Sonobe , Yoshikuni Koruda , Regis Zils , Minoru Ino , Takako Kimura , Yukinobu Nishikawa
发明人： Jun Sonobe , Yoshikuni Koruda , Regis Zils , Minoru Ino , Takako Kimura , Yukinobu Nishikawa
IPC分类号： C23C16/44 , C23C16/448 , H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/4488 , H01L21/67063
摘要： A cleaning apparatus (30) is connected to a treating chamber (12) of a CVD apparatus (10) for forming a silicon film. The cleaning apparatus (30) has a first, a second, and a third gas sources (32, 34, 36) and a chlorine gas, a fluorine gas, and an inert gas are introduced from the gas sources through FMC (38a, 38b, 38c), respectively, with flow rates controlled independently from one another. Those gases are gathered at a pipe (42) and mixed into a mixed gas. The mixed gas is passed through a heated reactor (44) such as a heat exchanger to thereby react the chlorine gas with the fluorine gas and form a formed gas containing fluorinated chlorine gas such as CIF3. The formed gas is supplied to the treating chamber (12) through a cooler (46), an analyzer (48) and a buffer (54).
摘要翻译：清洁装置（30）连接到用于形成硅膜的CVD装置（10）的处理室（12）。清洁装置（30）具有第一，第二和第三气体源（32,34,36），氯气，氟气和惰性气体通过FMC（38a，38b）从气体源引入，38c），流量彼此独立地控制。这些气体聚集在管道（42）上并混合成混合气体。混合气体通过热交换器等加热反应器（44），使氯气与氟气反应，形成含有氟化氯气的成形气体，例如CIF3。形成的气体通过冷却器（46），分析器（48）和缓冲器（54）供应到处理室（12）。

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