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    • 3. 发明申请
    • NON-VOLATILE SEMICONDUCTOR MEMORY AND MEMORY SYSTEM
    • 非易失性半导体存储器和存储器系统
    • US20110267893A1
    • 2011-11-03
    • US13180148
    • 2011-07-11
    • Junichi KATOHideto Kotani
    • Junichi KATOHideto Kotani
    • G11C16/34
    • G11C16/06G11C16/28G11C16/3454
    • A non-volatile semiconductor memory determines that a given memory cell in an array is at a predetermined threshold voltage in a determination circuit by comparing a current of the memory cell with a reference current in a sense amplifier circuit. A reference current generation circuit includes a current variable device adjusting the reference current. A current adjustment amount calculator receives address information of the memory cell of which threshold voltage is determined and calculates a current adjustment amount corresponding to the address information. The current variable device adjusts the reference current based on the calculated current adjustment amount. Therefore, even when characteristics of interconnects coupled to the sense amplifier circuit, the target memory cell, and the sense amplifier vary, an offset amount between an actual threshold and an apparent threshold is eliminated to reduce electric stress applied to the memory cell in a rewrite operation.
    • 非易失性半导体存储器通过将存储单元的电流与读出放大器电路中的参考电流进行比较来确定阵列中的给定存储单元在确定电路中处于预定的阈值电压。 参考电流产生电路包括调整参考电流的电流可变器件。 当前调整量计算器接收确定了阈值电压的存储单元的地址信息,并计算与地址信息对应的当前调整量。 电流可变装置根据计算出的电流调整量来调整基准电流。 因此,即使当耦合到读出放大器电路,目标存储器单元和读出放大器的互连的特性变化时,消除实际阈值和表观阈值之间的偏移量,以减少在重写中施加到存储器单元的电应力 操作。