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1. 发明授权

US08721390B2 Method for the double-side polishing of a semiconductor wafer 有权
标题翻译：半导体晶圆的双面抛光方法
公开(公告)号：US08721390B2
公开(公告)日：2014-05-13
申请号：US13041477
申请日：2011-03-07
申请人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert
发明人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert
IPC分类号： B24B1/00
CPC分类号： H01L21/02024 , B24B37/044 , B24B37/08
摘要： A method for double-side polishing of a semiconductor wafer includes situating the semiconductor wafer in a cutout of a carrier that is disposed in a working gap between an upper polishing plate covered by a first polishing pad and a lower polishing plate covered by a second polishing pad. The first and second polishing pads each include tiled square segments that are formed by an arrangement of channels on the pads, where the square segments of the first pad are larger than the segments of the second pad. The square segments of the polishing pads include abrasives. During polishing, the carrier is guided such that a portion of the wafer temporarily projects laterally outside of the working gap. A polishing agent with a pH that is variable is supplied during polishing at a pH in a range of 11 to 12.5 during a first step and at a pH of at least 13 during a second step.
摘要翻译：一种用于半导体晶片的双面抛光的方法包括将半导体晶片置于载体的切口中，所述载体的切口位于由第一抛光垫覆盖的上抛光板和被第二抛光覆盖的下抛光板之间的工作间隙中垫。第一和第二抛光垫各自包括通过焊盘上的通道布置形成的平铺方形区段，其中第一焊盘的正方形段大于第二焊盘的段。抛光垫的方形片段包括磨料。在抛光期间，载体被引导使得晶片的一部分临时突出到工作间隙外侧。在第一步骤期间，在pH为11至12.5的范围内，在第二步骤期间，在至少13℃的pH下，在抛光期间提供pH可变的抛光剂。

2. 发明申请

US20090029552A1 Method For Polishing A Substrate Composed Of Semiconductor Material 有权
标题翻译：抛光由半导体材料组成的基板的方法
公开(公告)号：US20090029552A1
公开(公告)日：2009-01-29
申请号：US12166486
申请日：2008-07-02
申请人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert , Georg Pietsch
发明人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert , Georg Pietsch
IPC分类号： H01L21/465
CPC分类号： C09G1/02 , B24B7/228 , B24B37/044 , H01L21/02024
摘要： Semiconductor material substrates are polished by a method including at least one polishing step A by means of which the substrate is polished on a polishing pad containing an abrasive material bonded in the polishing pad and a polishing agent solution is introduced between the substrate and the polishing pad during the polishing step; and at least one polishing step B by means of which the substrate is polished on a polishing pad containing an abrasive material-containing polishing pad and wherein a polishing agent slurry containing unbonded abrasive material is introduced between the substrate and the polishing pad during the polishing step.
摘要翻译：通过包括至少一个研磨步骤A的方法对半导体材料基板进行抛光，利用该抛光步骤A，在包含在研磨垫中结合的研磨材料的抛光垫上抛光基板，并且将抛光剂溶液引入到基板和抛光垫在抛光步骤中; 以及至少一个抛光步骤B，通过该抛光步骤B将衬底抛光在包含含研磨材料的抛光垫的抛光垫上，并且其中在抛光步骤中将含有未结合磨料的抛光剂浆料引入衬底和抛光垫之间。

3. 发明授权

US08647985B2 Method for polishing a substrate composed of semiconductor material 有权
标题翻译：抛光由半导体材料构成的基板的方法
公开(公告)号：US08647985B2
公开(公告)日：2014-02-11
申请号：US12166486
申请日：2008-07-02
申请人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert , Georg Pietsch
发明人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert , Georg Pietsch
IPC分类号： H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68
CPC分类号： C09G1/02 , B24B7/228 , B24B37/044 , H01L21/02024
摘要： Semiconductor material substrates are polished by a method including at least one polishing step A by means of which the substrate is polished on a polishing pad containing an abrasive material bonded in the polishing pad and a polishing agent solution is introduced between the substrate and the polishing pad during the polishing step; and at least one polishing step B by means of which the substrate is polished on a polishing pad containing an abrasive material-containing polishing pad and wherein a polishing agent slurry containing unbonded abrasive material is introduced between the substrate and the polishing pad during the polishing step.
摘要翻译：通过包括至少一个研磨步骤A的方法对半导体材料基板进行抛光，利用该抛光步骤A，在包含在研磨垫中结合的研磨材料的抛光垫上抛光基板，并且在基板和抛光垫之间引入抛光剂溶液在抛光步骤中; 以及至少一个抛光步骤B，通过该抛光步骤B将衬底抛光在包含含研磨材料的抛光垫的抛光垫上，并且其中在抛光步骤中将含有未结合磨料的抛光剂浆料引入衬底和抛光垫之间。

4. 发明申请

US20110244762A1 METHOD FOR THE DOUBLE-SIDE POLISHING OF A SEMICONDUCTOR WAFER 有权
标题翻译：半导体波形双面抛光方法
公开(公告)号：US20110244762A1
公开(公告)日：2011-10-06
申请号：US13041477
申请日：2011-03-07
申请人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert
发明人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert
IPC分类号： B24B1/00
CPC分类号： H01L21/02024 , B24B37/044 , B24B37/08
摘要： A method for double-side polishing of a semiconductor wafer includes situating the semiconductor wafer in a cutout of a carrier that is disposed in a working gap between an upper polishing plate covered by a first polishing pad and a lower polishing plate covered by a second polishing pad. The first and second polishing pads each include tiled square segments that are formed by an arrangement of channels on the pads, where the square segments of the first pad are larger than the segments of the second pad. The square segments of the polishing pads include abrasives. During polishing, the carrier is guided such that a portion of the wafer temporarily projects laterally outside of the working gap. A polishing agent with a pH that is variable is supplied during polishing at a pH in a range of 11 to 12.5 during a first step and at a pH of at least 13 during a second step.
摘要翻译：一种用于半导体晶片的双面抛光的方法包括将半导体晶片置于载体的切口中，所述载体的切口位于由第一抛光垫覆盖的上抛光板和被第二抛光覆盖的下抛光板之间的工作间隙中垫。第一和第二抛光垫各自包括通过焊盘上的通道布置形成的平铺方形区段，其中第一焊盘的正方形段大于第二焊盘的段。抛光垫的方形片段包括磨料。在抛光期间，载体被引导使得晶片的一部分临时突出到工作间隙外侧。在第一步骤期间，在pH为11至12.5的范围内，在第二步骤期间，在至少13℃的pH下，在抛光期间提供pH可变的抛光剂。

5. 发明申请

US20080265375A1 Methods for the single-sided polishing of semiconductor wafers and semiconductor wafer having a relaxed Si1-x GEx Layer 审中-公开
标题翻译：具有弛豫Si1-xGGx层的半导体晶片和半导体晶片的单面抛光方法
公开(公告)号：US20080265375A1
公开(公告)日：2008-10-30
申请号：US12148739
申请日：2008-04-22
申请人： Georg Pietsch , Thomas Buschhardt , Juergen Schwandner
发明人： Georg Pietsch , Thomas Buschhardt , Juergen Schwandner
IPC分类号： H01L21/306 , H01L29/30
CPC分类号： H01L21/30625 , C09G1/02
摘要： Single-sided polishing of semiconductor wafers provided with a relaxed Si1-xGex layer involves polishing of a multiplicity of wafers in a plurality of polishing runs, a polishing run having at least one polishing step, at least one of the multiplicity of wafers obtained with a polished Si1-xGex layer at the end of each polishing run; moving the wafer during the polishing step over a rotating polishing plate provided with a polishing cloth while applying polishing pressure, and supplying polishing agent between the polishing cloth and the semiconductor wafer, the polishing agent containing an alkaline component and a component that dissolves germanium. Semiconductor wafer having a Si1-xGex layer substantially free of defects and haze is produced.
摘要翻译：设置有松弛的Si 1-x N x层的半导体晶片的单面抛光涉及在多个抛光运行中抛光多个晶片，抛光运行具有至少一个研磨步骤，在每个抛光运行结束时用抛光的Si 1-x Ge x N层获得的多个晶片中的至少一个; 在抛光步骤期间将晶片在设置有抛光布的旋转抛光板上移动，同时施加抛光压力，并在抛光布和半导体晶片之间提供抛光剂，抛光剂含有碱性成分和溶解锗的成分。产生具有基本上没有缺陷和雾度的Si 1-x N z O x S层的半导体晶片。

6. 发明授权

US08685270B2 Method for producing a semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US08685270B2
公开(公告)日：2014-04-01
申请号：US12902558
申请日：2010-10-12
申请人： Juergen Schwandner , Thomas Buschhardt , Diego Feijoo , Michael Kerstan , Georg Pietsch , Guenter Schwab
发明人： Juergen Schwandner , Thomas Buschhardt , Diego Feijoo , Michael Kerstan , Georg Pietsch , Guenter Schwab
IPC分类号： C03C15/00 , C03C25/68 , B44C1/22 , H01L21/302 , H01L21/461
CPC分类号： B24B37/042 , B24B37/08 , H01L21/02013 , H01L21/02019 , H01L21/02021 , H01L21/02024
摘要： A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 μm. A first simultaneous double-side material-removing process is performed wherein the semiconductor wafers are processed between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 5.0-20.0 μm, wherein the semiconductor wafer is placed in a cutout in one of a plurality of carriers rotatable by a rolling apparatus such that the semiconductor wafer lies in a freely movable manner in the carrier and the wafer is movable on a cycloidal trajectory. A second simultaneous double-side material-removing process is performed including processing the semiconductor wafers between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 0.5-15.0 μm.
摘要翻译：用于制造从单晶切片的半导体晶片的方法包括使用包含平均粒径为20.0-60.0μm的研磨剂的研磨盘对边缘进行四舍五入。进行第一同时双面材料去除工艺，其中半导体晶片在两个旋转环形工作盘之间加工，每个工作盘具有包含平均粒度为5.0-20.0μm的研磨剂的工作层，其中半导体晶片被放置在由滚动装置旋转的多个载体之一的切口中，使得半导体晶片以可自由移动的方式位于载体中，并且晶片可以在摆线轨迹上移动。进行第二同时双面材料去除处理，包括在两个旋转环形工作盘之间处理半导体晶片，每个工作盘具有包含平均晶粒尺寸为0.5-15.0μm的研磨剂的工作层。

7. 发明授权

US09230794B2 Process for cleaning, drying and hydrophilizing a semiconductor wafer 有权
标题翻译：用于清洁，干燥和亲水化半导体晶片的方法
公开(公告)号：US09230794B2
公开(公告)日：2016-01-05
申请号：US12134378
申请日：2008-06-06
申请人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo
发明人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo
IPC分类号： H01L21/02 , C30B29/16 , C30B33/00
CPC分类号： H01L21/02052 , C30B29/16 , C30B33/00
摘要： Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated: a) treating the semiconductor wafer with a liquid aqueous solution containing hydrogen fluoride, the semiconductor wafer rotating about its center axis at least occasionally, and b) drying the semiconductor wafer by rotation of the semiconductor wafer about its center axis at a rotational speed of 1000 to 5000 revolutions per minute in an ozone-containing atmosphere, the liquid aqueous solution containing hydrogen fluoride flowing away from the semiconductor wafer on account of the centrifugal force generated by the rotation, and the surface of the semiconductor wafer being hydrophilized by ozone.
摘要翻译：半导体晶片按照以下顺序进行以下步骤的清洗，干燥和亲水化：a）用含有氟化氢的液体水溶液处理半导体晶片，半导体晶片至少偶尔围绕其中心轴线旋转，以及b）干燥半导体在含有臭氧的气氛中以1000-5000转/分钟的转速使半导体晶片围绕其中心轴线旋转，由于由半导体晶片产生的离心力，含有氟化氢的液体水溶液离开半导体晶片半导体晶片的旋转和表面被臭氧亲水化。

8. 发明授权

US08070882B2 Method for the wet-chemical treatment of a semiconductor wafer 有权
标题翻译：半导体晶片的湿化学处理方法
公开(公告)号：US08070882B2
公开(公告)日：2011-12-06
申请号：US12326969
申请日：2008-12-03
申请人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
发明人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
IPC分类号： B08B7/00
CPC分类号： H01L21/02052 , B08B3/10 , H01L21/02057
摘要： A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 μm or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.
摘要翻译：半导体晶片的湿化学处理方法包括：a）旋转半导体晶片; b）向旋转晶片施加包含直径为100μm或更小直径的气泡的清洗液体，使得在晶片上形成液膜; c）将旋转的半导体晶片暴露于含有反应气体的气氛中; 和d）从晶片上去除液膜。

9. 发明申请

US20100291761A1 Method For Producing A Wafer Comprising A Silicon Single Crystal Substrate Having A Front And A Back Side And A Layer of SiGe Deposited On The Front Side 有权
标题翻译：制造包含前面和背面的硅单晶衬底的晶片的方法和在正面上沉积的SiGe层
公开(公告)号：US20100291761A1
公开(公告)日：2010-11-18
申请号：US12724584
申请日：2010-03-16
申请人： Peter Storck , Thomas Buschhardt
发明人： Peter Storck , Thomas Buschhardt
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/02658 , Y10S438/933
摘要： A method for producing a wafer with a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side, the method using steps in the following order: simultaneously polishing the front and the back side of the silicon single crystal substrate; depositing a stress compensating layer on the back side of the silicon single crystal substrate; polishing the front side of the silicon single crystal substrate; cleaning the silicon single crystal substrate having the stress compensating layer deposited on the back side; and depositing a fully or partially relaxed layer of SiGe on the front side of the silicon single crystal substrate.
摘要翻译：一种用于制造具有正面和背面的硅单晶基板和沉积在正面上的SiGe层的晶片的方法，该方法使用以下顺序的步骤：同时抛光硅的正面和背面单晶基板; 在所述硅单晶衬底的背面上沉积应力补偿层; 抛光硅单晶衬底的正面; 清洗具有沉积在背面的应力补偿层的硅单晶衬底; 以及在硅单晶衬底的正面上沉积完全或部分弛豫的SiGe层。

10. 发明申请

US20070259530A1 METHOD FOR PRODUCING A LAYER STRUCTURE 失效
标题翻译：生产层状结构的方法
公开(公告)号：US20070259530A1
公开(公告)日：2007-11-08
申请号：US11743694
申请日：2007-05-03
申请人： Diego Feijoo , Gunter Schwab , Thomas Buschhardt
发明人： Diego Feijoo , Gunter Schwab , Thomas Buschhardt
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02049
摘要： A layer structure comprising a smoothed interlayer and an overlying layer applied on the interlayer, wherein the interlayer is treated with a gaseous etchant containing hydrogen fluoride, a material removal being obtained thereby and the interlayer being smoothed.
摘要翻译：包括平滑的中间层和施加在中间层上的上层的层结构，其中用含氟化氢的气体蚀刻剂处理中间层，由此获得材料去除并且中间层被平滑化。

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