专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10707069B2 Method for polishing a semiconductor wafer 有权
公开(公告)号：US10707069B2
公开(公告)日：2020-07-07
申请号：US13038455
申请日：2011-03-02
申请人： Juergen Schwandner , Michael Kerstan
发明人： Juergen Schwandner , Michael Kerstan
IPC分类号： B24B7/22 , H01L21/02
摘要： A method of polishing a semiconductor wafer includes polishing a surface of the semiconductor wafer using a polishing pad while supplying a polishing agent slurry containing abrasives during a first step. The polishing pad is free of abrasives and includes a first surface that contacts the semiconductor wafer, the first surface having a surface structure including elevations. Supply of polishing agent slurry is subsequently ended and, in a second step, the surface of the semiconductor wafer is polished using the polishing pad while supplying a polishing agent solution having a pH value of at least 12 that is free of solids.

2. 发明授权

US08685270B2 Method for producing a semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US08685270B2
公开(公告)日：2014-04-01
申请号：US12902558
申请日：2010-10-12
申请人： Juergen Schwandner , Thomas Buschhardt , Diego Feijoo , Michael Kerstan , Georg Pietsch , Guenter Schwab
发明人： Juergen Schwandner , Thomas Buschhardt , Diego Feijoo , Michael Kerstan , Georg Pietsch , Guenter Schwab
IPC分类号： C03C15/00 , C03C25/68 , B44C1/22 , H01L21/302 , H01L21/461
CPC分类号： B24B37/042 , B24B37/08 , H01L21/02013 , H01L21/02019 , H01L21/02021 , H01L21/02024
摘要： A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 μm. A first simultaneous double-side material-removing process is performed wherein the semiconductor wafers are processed between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 5.0-20.0 μm, wherein the semiconductor wafer is placed in a cutout in one of a plurality of carriers rotatable by a rolling apparatus such that the semiconductor wafer lies in a freely movable manner in the carrier and the wafer is movable on a cycloidal trajectory. A second simultaneous double-side material-removing process is performed including processing the semiconductor wafers between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 0.5-15.0 μm.
摘要翻译：用于制造从单晶切片的半导体晶片的方法包括使用包含平均粒径为20.0-60.0μm的研磨剂的研磨盘对边缘进行四舍五入。进行第一同时双面材料去除工艺，其中半导体晶片在两个旋转环形工作盘之间加工，每个工作盘具有包含平均粒度为5.0-20.0μm的研磨剂的工作层，其中半导体晶片被放置在由滚动装置旋转的多个载体之一的切口中，使得半导体晶片以可自由移动的方式位于载体中，并且晶片可以在摆线轨迹上移动。进行第二同时双面材料去除处理，包括在两个旋转环形工作盘之间处理半导体晶片，每个工作盘具有包含平均晶粒尺寸为0.5-15.0μm的研磨剂的工作层。

3. 发明申请

US20110223841A1 METHOD FOR POLISHING A SEMICONDUCTOR WAFER 审中-公开
标题翻译：抛光半导体波长的方法
公开(公告)号：US20110223841A1
公开(公告)日：2011-09-15
申请号：US13038455
申请日：2011-03-02
申请人： Juergen Schwandner , Michael Kerstan
发明人： Juergen Schwandner , Michael Kerstan
IPC分类号： B24B1/00
CPC分类号： H01L21/02024
摘要： A method of polishing a semiconductor wafer includes polishing a surface of the semiconductor wafer using a polishing pad while supplying a polishing agent slurry containing abrasives during a first step. The polishing pad is free of abrasives and includes a first surface that contacts the semiconductor wafer, the first surface having a surface structure including elevations. Supply of polishing agent slurry is subsequently ended and, in a second step, the surface of the semiconductor wafer is polished using the polishing pad while supplying a polishing agent solution having a pH value of at least 12 that is free of solids.
摘要翻译：抛光半导体晶片的方法包括在第一步骤期间提供包含研磨剂的抛光剂浆料时，使用抛光垫来抛光半导体晶片的表面。抛光垫没有磨料，并且包括接触半导体晶片的第一表面，第一表面具有包括立面的表面结构。随后结束抛光剂浆料的供应，在第二步骤中，使用抛光垫对半导体晶片的表面进行抛光，同时提供不含固体的pH值至少为12的抛光剂溶液。

4. 发明授权

US08529315B2 Method for producing a semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US08529315B2
公开(公告)日：2013-09-10
申请号：US13009890
申请日：2011-01-20
申请人： Juergen Schwandner , Michael Kerstan
发明人： Juergen Schwandner , Michael Kerstan
IPC分类号： B24B1/00
CPC分类号： H01L21/02008
摘要： A method of producing a semiconductor wafer includes a plurality of steps carried out in the following order. Simultaneous double-side material-removal processing is carried out on a semiconductor wafer sliced from a single crystal by processing the semiconductor wafer between two rotating ring-shaped working disks. Each working disk includes first abrasives having an average grain size in a range of 5.0 to 20.0 μm. Both sides of the semiconductor wafer are treated with an alkaline medium. Grinding of the front and rear sides of the semiconductor wafer is carried out. For the grinding of each side a first side is held using a wafer holder and the other side is processed using a grinding tool. The grinding tool includes second abrasives having an average grain size that is smaller than the average grain size of the first abrasives and having an average grain size being in a range of 1.0 to 10.0 μm. Both sides are polished using a polishing pad including third abrasives having an average grain size in a range of 0.1 to 1.0 μm. The front side is polished using a stock removal polishing pad that is free of abrasives and a polishing agent containing fourth abrasives. The front side is then chemical mechanical polished.
摘要翻译：制造半导体晶片的方法包括以下顺序执行的多个步骤。通过在两个旋转的环状工作盘之间加工半导体晶片，在从单晶切片的半导体晶片上进行同时双面材料去除处理。每个工作盘包括平均粒度在5.0至20.0μm范围内的第一研磨剂。用碱性介质处理半导体晶片的两侧。进行半导体晶片的前侧和后侧的研磨。为了研磨每个侧面，使用晶片保持器保持第一侧，并且使用研磨工具来处理另一侧。研磨工具包括平均粒度小于第一研磨剂的平均晶粒尺寸并且平均晶粒尺寸在1.0至10.0μm范围内的第二研磨剂。使用包括平均粒度在0.1〜1.0μm范围内的第三研磨剂的抛光垫对两面进行研磨。使用不含磨料的抛光抛光垫和含有第四磨料的抛光剂来抛光前侧。然后正面进行化学机械抛光。

5. 发明申请

US20110183582A1 METHOD FOR PRODUCING A SEMICONDUCTOR WAFER 有权
标题翻译：生产半导体波形的方法
公开(公告)号：US20110183582A1
公开(公告)日：2011-07-28
申请号：US13009890
申请日：2011-01-20
申请人： Juergen Schwandner , Michael Kerstan
发明人： Juergen Schwandner , Michael Kerstan
IPC分类号： B28D5/00
CPC分类号： H01L21/02008
摘要： A method of producing a semiconductor wafer includes a plurality of steps carried out in the following order. Simultaneous double-side material-removal processing is carried out on a semiconductor wafer sliced from a single crystal by processing the semiconductor wafer between two rotating ring-shaped working disks. Each working disk includes first abrasives having an average grain size in a range of 5.0 to 20.0 μm. Both sides of the semiconductor wafer are treated with an alkaline medium. Grinding of the front and rear sides of the semiconductor wafer is carried out. For the grinding of each side a first side is held using a wafer holder and the other side is processed using a grinding tool. The grinding tool includes second abrasives having an average grain size that is smaller than the average grain size of the first abrasives and having an average grain size being in a range of 1.0 to 10.0 μm. Both sides are polished using a polishing pad including third abrasives having an average grain size in a range of 0.1 to 1.0 μm. The front side is polished using a stock removal polishing pad that is free of abrasives and a polishing agent containing fourth abrasives. The front side is then chemical mechanical polished.
摘要翻译：制造半导体晶片的方法包括以下顺序执行的多个步骤。通过在两个旋转的环状工作盘之间加工半导体晶片，在从单晶切片的半导体晶片上进行同时双面材料去除处理。每个工作盘包括平均粒径在5.0至20.0μm范围内的第一研磨剂。用碱性介质处理半导体晶片的两侧。进行半导体晶片的前侧和后侧的研磨。为了研磨每个侧面，使用晶片保持器保持第一侧，并且使用研磨工具来处理另一侧。研磨工具包括平均粒度小于第一研磨剂的平均粒径的第二研磨剂，平均粒径在1.0〜10.0μm的范围内。使用具有平均粒径为0.1〜1.0μm的第三研磨剂的抛光垫对两面进行研磨。使用不含磨料的抛光抛光垫和含有第四磨料的抛光剂来抛光前侧。然后正面进行化学机械抛光。

6. 发明授权

US09224613B2 Method for polishing both sides of a semiconductor wafer 有权
标题翻译：抛光半导体晶片两侧的方法
公开(公告)号：US09224613B2
公开(公告)日：2015-12-29
申请号：US12582788
申请日：2009-10-21
申请人： Juergen Schwandner
发明人： Juergen Schwandner
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311 , B44C1/22 , H01L21/304 , B24B37/04 , B24B37/08
CPC分类号： H01L21/304 , B24B37/042 , B24B37/08 , H01L21/461 , Y10T428/24355
摘要： Both sides of a large diameter semiconductor wafer are polished by the following ordered steps: a) polishing the wafer backside on a polishing pad containing a fixed abrasive, a polishing agent solution free of solids being introduced between the wafer backside and the polishing pad; b) stock polishing the wafer frontside on a polishing pad which contains a fixed abrasive, a polishing agent solution free of solids being introduced between the wafer frontside of and the polishing pad; c) removing microroughness and microdamage from the wafer frontside by polishing the frontside on a polishing pad, a polishing agent solution containing abrasives being introduced between the wafer frontside and the polishing pad; and d) final polishing of the wafer frontside by polishing the frontside on a polishing pad containing no fixed abrasive, a polishing agent solution containing abrasives being introduced between the wafer frontside and the polishing pad during the polishing step.
摘要翻译：通过以下有序步骤对大直径半导体晶片的两侧进行抛光：a）在包含固定磨料的抛光垫上抛光晶片背面，在晶片背面和抛光垫之间引入不含固体的抛光剂溶液; b）在包含固定研磨剂的抛光垫上抛光晶片正面，在晶片前端和抛光垫之间引入不含固体的抛光剂溶液; c）通过在抛光垫上抛光前缘来去除晶片前方的微粗糙度和微小损伤;将抛光剂溶液包含在晶片前端和抛光垫之间引入; 以及d）通过在不含固定研磨剂的抛光垫上抛光前侧来研磨晶片前端的最后抛光，在抛光步骤期间将含有磨料的抛光剂溶液引入晶片前侧和抛光垫之间。

7. 发明授权

US08882565B2 Method for polishing a semiconductor wafer 有权
标题翻译：抛光半导体晶片的方法
公开(公告)号：US08882565B2
公开(公告)日：2014-11-11
申请号：US13042587
申请日：2011-03-08
申请人： Juergen Schwandner , Roland Koppert
发明人： Juergen Schwandner , Roland Koppert
IPC分类号： B24B1/00 , H01L21/02 , B24B37/005
CPC分类号： B24B37/0056 , H01L21/02024
摘要： A method of polishing a semiconductor wafer includes applying a polishing pad to the semiconductor wafer so as to subject the semiconductor wafer to a polishing process and supplying an aqueous polishing agent solution between the polishing pad and the semiconductor wafer. The polishing pad includes fixedly bonded abrasives of SiO2 with an average grain size in a range of 0.1 to 1.0 μm. The aqueous polishing agent solution comprising an alkaline component, being free of solid materials and having a variable pH value in a range of 11 to 13.5. The aqueous polishing agent solution is maintained at a pH value of less than 13 during the polishing process and the pH value of the aqueous polishing agent solution is increased to a range of 13 to 13.5 so as to end the polishing process.
摘要翻译：抛光半导体晶片的方法包括将抛光垫施加到半导体晶片，以便对半导体晶片进行抛光处理，并在抛光垫和半导体晶片之间提供水性抛光剂溶液。抛光垫包括固定粘结的SiO 2研磨剂，其平均粒度在0.1至1.0μm的范围内。该水性抛光剂溶液包含碱性组分，不含固体材料，其pH值可变在11至13.5的范围内。在研磨工序中，水性研磨剂溶液的pH值保持在13以下，水性研磨剂溶液的pH值提高到13〜13.5的范围，结束研磨处理。

8. 发明授权

US08551870B2 Method for producing an epitaxially coated semiconductor wafer 有权
标题翻译：用于制造外延涂覆的半导体晶片的方法
公开(公告)号：US08551870B2
公开(公告)日：2013-10-08
申请号：US12797877
申请日：2010-06-10
申请人： Juergen Schwandner , Roland Koppert
发明人： Juergen Schwandner , Roland Koppert
IPC分类号： H01L21/20 , H01L21/304
CPC分类号： H01L21/30625 , B24B37/04
摘要： Epitaxially coated semiconductor wafers are produced by minimally the following steps in the order specified: (a) depositing an epitaxial layer on one side of a semiconductor wafer; (b) first polishing the epitaxially coated side of the semiconductor wafer with a polishing pad with fixed abrasive while supplying a polishing solution which is free of solids; (c) CMP polishing of the epitaxially coated side of the semiconductor wafer with a soft polishing pad which contains no fixed abrasive, while supplying a polishing agent suspension; (d) depositing another epitaxial layer on the previously epitaxially coated and polished side of the semiconductor wafer.
摘要翻译：外延涂覆的半导体晶片按照以下顺序通过最少的以下步骤制造：（a）在半导体晶片的一侧上沉积外延层; （b）用具有固定磨料的抛光垫首先抛光半导体晶片的外延涂覆侧，同时供给不含固体的抛光溶液; （c）在提供抛光剂悬浮液的同时，用不含固定磨料的软抛光垫对半导体晶片的外延涂覆侧进行CMP抛光; （d）在半导体晶片的先前外延涂覆和抛光的一侧上沉积另一个外延层。

9. 发明授权

US08444455B2 Polishing pad and method for polishing a semiconductor wafer 有权
标题翻译：抛光垫和抛光半导体晶片的方法
公开(公告)号：US08444455B2
公开(公告)日：2013-05-21
申请号：US12774153
申请日：2010-05-05
申请人： Juergen Schwandner , Roland Koppert
发明人： Juergen Schwandner , Roland Koppert
IPC分类号： B24B1/00
CPC分类号： B24B37/22 , B24B7/22 , B24B7/228 , B24B37/0056 , B24D3/28 , B24D11/00 , B24D13/147 , C09G1/04 , H01L21/02024
摘要： A semiconductor wafer is polished, wherein in a first step, the rear side of the wafer is polished by a polishing pad comprising fixedly bonded abrasives having a grain size of 0.1-1.0 μm, while supplying a polishing agent free of solid materials having a pH of at least 11.8, and, in a second step, the front side of the semiconductor wafer is polished, wherein a polishing agent having a pH of less than 11.8 is supplied. A polishing pad for use in apparatuses for polishing semiconductor wafers, has a layer containing abrasives, a layer composed of a stiff plastic and also a compliant, non-woven layer, wherein the layers are bonded to one another by means of pressure-sensitive adhesive layers.
摘要翻译：抛光半导体晶片，其中在第一步骤中，通过抛光垫抛光晶片的后侧，抛光垫包括粒径为0.1-1.0μm的固定粘结的研磨剂，同时提供不含固体物质的抛光剂，其具有pH 为至少11.8，并且在第二步骤中，抛光半导体晶片的前侧，其中提供pH小于11.8的抛光剂。用于研磨半导体晶片的设备的抛光垫具有含有研磨剂的层，由刚性塑料构成的层以及顺应性无纺布层，其中通过压敏粘合剂将层彼此粘合层。

10. 发明申请

US20110244760A1 METHOD FOR POLISHING A SEMICONDUCTOR WAFER 有权
标题翻译：抛光半导体波长的方法
公开(公告)号：US20110244760A1
公开(公告)日：2011-10-06
申请号：US13042587
申请日：2011-03-08
申请人： Juergen Schwandner , Roland Koppert
发明人： Juergen Schwandner , Roland Koppert
IPC分类号： B24B1/00
CPC分类号： B24B37/0056 , H01L21/02024
摘要： A method of polishing a semiconductor wafer includes applying a polishing pad to the semiconductor wafer so as to subject the semiconductor wafer to a polishing process and supplying an aqueous polishing agent solution between the polishing pad and the semiconductor wafer. The polishing pad includes fixedly bonded abrasives of SiO2 with an average grain size in a range of 0.1 to 1.0 μm. The aqueous polishing agent solution comprising an alkaline component, being free of solid materials and having a variable pH value in a range of 11 to 13.5. The aqueous polishing agent solution is maintained at a pH value of less than 13 during the polishing process and the pH value of the aqueous polishing agent solution is increased to a range of 13 to 13.5 so as to end the polishing process.
摘要翻译：抛光半导体晶片的方法包括将抛光垫施加到半导体晶片，以便对半导体晶片进行抛光处理，并在抛光垫和半导体晶片之间提供水性抛光剂溶液。抛光垫包括固定粘结的SiO 2研磨剂，其平均粒度在0.1至1.0μm的范围内。该水性抛光剂溶液包含碱性组分，不含固体材料，其pH值可变在11至13.5的范围内。在研磨工序中，水性研磨剂溶液的pH值保持在13以下，水性研磨剂溶液的pH值提高到13〜13.5的范围，结束研磨处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式