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1. 发明申请

US20080008969A1 Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same 有权
标题翻译：在形成半导体器件期间使用交替间隔物沉积的减径技术及包括其的系统
公开(公告)号：US20080008969A1
公开(公告)日：2008-01-10
申请号：US11484271
申请日：2006-07-10
申请人： Baosuo Zhou , Mirzafer K. Abatchev , Ardavan Niroomand , Paul A. Morgan , Shuang Meng , Joseph N. Greeley , Brian J. Coppa
发明人： Baosuo Zhou , Mirzafer K. Abatchev , Ardavan Niroomand , Paul A. Morgan , Shuang Meng , Joseph N. Greeley , Brian J. Coppa
IPC分类号： G03F7/26
CPC分类号： H01L21/30625 , H01L21/0335 , H01L21/0337 , H01L21/0338 , H01L21/30604 , H01L21/3086 , H01L21/3088 , H01L23/564 , H01L2924/0002 , H01L2924/00
摘要： A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be etched is provided, then an initial sacrificial patterning layer, for example formed using optical lithography, is formed over the layer to be etched. Depending on the embodiment, the patterning layer may be trimmed, then a series of spacer layers formed and etched. The number of spacer layers and their target dimensions depends on the desired increase in feature density. An in-process semiconductor device and electronic system is also described.
摘要翻译：图案化层的方法使用一系列自对准间隔物增加在初始图案化层上形成的特征的密度。提供待蚀刻的层，然后在待蚀刻的层上形成例如使用光学光刻形成的初始牺牲图案形成层。根据实施例，图案化层可以被修整，然后形成并蚀刻一系列间隔层。间隔层的数量及其目标尺寸取决于所需的特征密度增加。还描述了一种过程中半导体器件和电子系统。

2. 发明授权

US08852851B2 Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same 有权
标题翻译：在形成半导体器件期间使用交替间隔物沉积的减径技术及包括其的系统
公开(公告)号：US08852851B2
公开(公告)日：2014-10-07
申请号：US11484271
申请日：2006-07-10
申请人： Baosuo Zhou , Mirzafer K. Abatchev , Ardavan Niroomand , Paul A. Morgan , Shuang Meng , Joseph N. Greeley , Brian J. Coppa
发明人： Baosuo Zhou , Mirzafer K. Abatchev , Ardavan Niroomand , Paul A. Morgan , Shuang Meng , Joseph N. Greeley , Brian J. Coppa
IPC分类号： H01L21/033 , H01L21/308
CPC分类号： H01L21/30625 , H01L21/0335 , H01L21/0337 , H01L21/0338 , H01L21/30604 , H01L21/3086 , H01L21/3088 , H01L23/564 , H01L2924/0002 , H01L2924/00
摘要： A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be etched is provided, then an initial sacrificial patterning layer, for example formed using optical lithography, is formed over the layer to be etched. Depending on the embodiment, the patterning layer may be trimmed, then a series of spacer layers formed and etched. The number of spacer layers and their target dimensions depends on the desired increase in feature density. An in-process semiconductor device and electronic system is also described.
摘要翻译：图案化层的方法使用一系列自对准间隔物增加在初始图案化层上形成的特征的密度。提供待蚀刻的层，然后在待蚀刻的层上形成例如使用光学光刻形成的初始牺牲图案形成层。根据实施例，图案化层可以被修整，然后形成并蚀刻一系列间隔层。间隔层的数量及其目标尺寸取决于所需的特征密度增加。还描述了一种过程中半导体器件和电子系统。

3. 发明授权

US07585782B2 Methods of forming semiconductor constructions, and methods of selectively removing metal-containing materials relative to oxide 失效
标题翻译：形成半导体结构的方法以及相对于氧化物选择性除去含金属材料的方法
公开(公告)号：US07585782B2
公开(公告)日：2009-09-08
申请号：US11402698
申请日：2006-04-11
申请人： Joseph N. Greeley , Paul A. Morgan
发明人： Joseph N. Greeley , Paul A. Morgan
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/7684 , H01L21/32134 , H01L21/76865 , H01L21/76883
摘要： The invention includes methods of selectively removing metal-containing copper barrier materials (such as tantalum-containing materials, titanium-containing materials and tungsten-containing materials) relative to oxide (such as silicon dioxide) and/or copper. The selective removal can utilize etchant solutions containing hydrofluoric acid and one or more carboxylic acids. The etchant solutions can contain less than 6 weight percent water, and/or can have a dielectric constant below 40.
摘要翻译：本发明包括相对于氧化物（例如二氧化硅）和/或铜选择性除去含金属铜阻挡材料（例如含钽材料，含钛材料和含钨材料）的方法。选择性去除可以使用含有氢氟酸和一种或多种羧酸的蚀刻剂溶液。蚀刻剂溶液可以含有少于6重量％的水，和/或可以具有低于40的介电常数。

4. 发明申请

US20130084699A1 Selective Metal Deposition Over Dielectric Layers 有权
标题翻译：电介质层上的选择性金属沉积
公开(公告)号：US20130084699A1
公开(公告)日：2013-04-04
申请号：US13686107
申请日：2012-11-27
申请人： Paul A. Morgan , Nishant Sinha
发明人： Paul A. Morgan , Nishant Sinha
IPC分类号： H01L21/283
CPC分类号： H01L21/283 , H01L21/76802 , H01L21/76834 , H01L21/76879
摘要： Selective deposition of metal over dielectric layers in a manner that minimizes of eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured as allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over substrate layer.
摘要翻译：提供金属在电介质层上的选择性沉积，以最小化消除键孔形成的方式。根据一个实施例，介电目标层形成在衬底层上，其中目标层可以被配置为允许保形金属沉积，并且在目标层上形成电介质第二层，其中第二层可被配置为允许自下而上的金属沉积。然后可以在第二层中形成开口，并且可以在衬底层上选择性地沉积金属。

5. 发明申请

US20080076263A1 Method of reducing electron beam damage on post W-CMP wafers 有权
标题翻译：减少后置W-CMP晶片电子束损伤的方法
公开(公告)号：US20080076263A1
公开(公告)日：2008-03-27
申请号：US11525492
申请日：2006-09-21
申请人： David A. Daycock , Paul A. Morgan , Shawn D. Lyonsmith , Curtis R. Olson
发明人： David A. Daycock , Paul A. Morgan , Shawn D. Lyonsmith , Curtis R. Olson
IPC分类号： H01L21/31
CPC分类号： H01L21/02074
摘要： Methods for reducing electron beam induced damage on semiconductor substrates employ compositions such as small chain organic solvents and non-neutral pH solutions to reduce or eliminate charge imbalances on semiconductor substrates caused by electron beam inspection of the semiconductor substrates. Damage to semiconductor substrates by electron beam inspection processes may also be reduced by generating or otherwise forming passivation films on a semiconductor substrate following electron beam inspection.
摘要翻译：减少电子束对半导体衬底的损伤的方法采用诸如小链有机溶剂和非中性pH溶液的组合物来减少或消除由半导体衬底的电子束检查引起的半导体衬底上的电荷失衡。通过电子束检查过程对半导体衬底的损伤也可以通过在电子束检查之后通过在半导体衬底上产生或以其它方式形成钝化膜来降低。

6. 发明授权

US07060631B2 Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates 失效
标题翻译：清洗含铜材料表面的方法以及向含铜基材形成开口的方法
公开(公告)号：US07060631B2
公开(公告)日：2006-06-13
申请号：US11130658
申请日：2005-05-16
申请人： Paul A. Morgan
发明人： Paul A. Morgan
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/461 , C25F1/00 , C03C15/08
CPC分类号： H01L21/02071 , C11D7/08 , C11D11/0047 , H01L21/31116 , H01L21/32134 , H01L21/76802 , H01L21/76814 , H01L21/76838
摘要： The invention encompasses a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising Cl−, NO3− and F−. The invention also includes a semiconductor processing method of forming an opening to a copper-containing substrate. Initially, a mass is formed over the copper-containing substrate. The mass comprises at least one of a silicon nitride and a silicon oxide. An opening is etched through the mass and to the copper-containing substrate. A surface of the copper-containing substrate defines a base of the opening, and is referred to as a base surface. The base surface of the copper-containing substrate is at least partially covered by at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a cleaning solution comprising hydrochloric acid, nitric acid and hydrofluoric acid to remove at least some of the at least one of a copper oxide, a silicon oxide or a copper fluoride from over the base surface.
摘要翻译：本发明包括通过将表面暴露于酸性混合物中来清洗含铜材料的表面的半导体加工方法，所述酸性混合物包括含有Cl， / SUP>和F 。本发明还包括形成对含铜基板的开口的半导体加工方法。最初，在含铜基板上形成质量。质量包括氮化硅和氧化硅中的至少一种。通过该质量体和含铜衬底蚀刻开口。含铜基材的表面限定了开口的基部，并且被称为基底表面。含铜基材的基面至少部分被铜氧化物，氧化硅或氟化铜中的至少一种覆盖。用包含盐酸，硝酸和氢氟酸的清洗溶液清洗基面，从基底表面上除去铜氧化物，氧化硅或氟化铜中的至少一种。

7. 发明授权

US06541391B2 Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates 有权
公开(公告)号：US06541391B2
公开(公告)日：2003-04-01
申请号：US09797356
申请日：2001-02-28
申请人： David Smith , Kevin J. Torek , Paul A. Morgan
发明人： David Smith , Kevin J. Torek , Paul A. Morgan
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , C11D7/06 , C11D7/08 , C11D7/10 , C11D11/0047 , H01L21/76838
摘要： The invention includes a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to a mixture having a basic pH and comprising Cl−, NO3− and F−. The invention also includes a semiconductor processing method of forming an opening to a copper-containing substrate. Initially, a mass is formed over the copper-containing substrate. The mass comprises at least one of a silicon nitride and a silicon oxide. An opening is etched through the mass and to the copper-containing substrate. A surface of the copper-containing substrate defines a base of the opening, and is referred to as a base surface. The base surface of the copper-containing substrate is at least partially covered by at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a cleaning solution comprising hydrochloric acid, nitric acid and hydrofluoric acid to remove at least some of the at least one of a copper oxide, a silicon oxide or a copper fluoride from over the base surface. The cleaning solution comprises a pH of at least 7.

8. 发明申请

US20130011940A1 METHOD OF REDUCING DAMAGE TO AN ELECTRON BEAM INSPECTED SEMICONDUCTOR SUBSTRATE, AND METHODS OF INSPECTING A SEMICONDUCTOR SUBSTRATE 有权
标题翻译：减少对电子束检测半导体基板的损害的方法以及检查半导体基板的方法
公开(公告)号：US20130011940A1
公开(公告)日：2013-01-10
申请号：US13615155
申请日：2012-09-13
申请人： David A. Daycock , Paul A. Morgan , Shawn D. Lyonsmith , Curtis R. Olson
发明人： David A. Daycock , Paul A. Morgan , Shawn D. Lyonsmith , Curtis R. Olson
IPC分类号： H01L21/66
CPC分类号： H01L21/02074
摘要： Methods for reducing electron beam induced damage on semiconductor substrates employ compositions such as small chain organic solvents and non-neutral pH solutions to reduce or eliminate charge imbalances on semiconductor substrates caused by electron beam inspection of the semiconductor substrates. Damage to semiconductor substrates by electron beam inspection processes may also be reduced by generating or otherwise forming passivation films on a semiconductor substrate following electron beam inspection.
摘要翻译：减少电子束对半导体衬底的损伤的方法采用诸如小链有机溶剂和非中性pH溶液的组合物来减少或消除由半导体衬底的电子束检查引起的半导体衬底上的电荷失衡。通过电子束检查过程对半导体衬底的损伤也可以通过在电子束检查之后在半导体衬底上产生或以其他方式形成钝化膜来降低。

9. 发明申请

US20120309999A1 AMMONIUM FLUORIDE CHEMISTRIES 有权
标题翻译：氟化铵化学品
公开(公告)号：US20120309999A1
公开(公告)日：2012-12-06
申请号：US13570866
申请日：2012-08-09
申请人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
发明人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
IPC分类号： C07F7/02
CPC分类号： H01L21/31116 , H01L21/0337
摘要： A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.
摘要翻译：公开了一种去除至少一部分氧化硅材料的方法。通过将包括衬底和氧化硅的半导体结构暴露于氟化铵化学处理和随后的等离子体处理中去除氧化硅，二者都可以在处理设备的相同真空室中进行。氟化铵化学处理在自限制反应中将氧化硅转化为固体反应产物，然后固体反应产物通过等离子体处理而挥发。等离子体处理包括具有小于或等于约20eV的离子轰击能的等离子体。还公开了包括烷基化氨衍生物和氟化氢的氟化铵化学处理。

10. 发明申请

US20090275205A1 METHODS OF REMOVING SILICON OXIDE AND GASEOUS MIXTURES FOR ACHIEVING SAME 有权
标题翻译：去除氧化硅和气相混合物的方法
公开(公告)号：US20090275205A1
公开(公告)日：2009-11-05
申请号：US12114380
申请日：2008-05-02
申请人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
发明人： Mark W. Kiehlbauch , J. Neil Greeley , Paul A. Morgan
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/0337
摘要： A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.
摘要翻译：公开了一种去除至少一部分氧化硅材料的方法。通过将包括衬底和氧化硅的半导体结构暴露于氟化铵化学处理和随后的等离子体处理中去除氧化硅，二者都可以在处理设备的相同真空室中进行。氟化铵化学处理在自限制反应中将氧化硅转化为固体反应产物，然后固体反应产物通过等离子体处理而挥发。等离子体处理包括具有小于或等于约20eV的离子轰击能的等离子体。还公开了包括烷基化氨衍生物和氟化氢的氟化铵化学处理。

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