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1. 发明授权

US08500913B2 Methods for treating surfaces, and methods for removing one or more materials from surfaces 有权
标题翻译：用于处理表面的方法以及从表面除去一种或多种材料的方法
公开(公告)号：US08500913B2
公开(公告)日：2013-08-06
申请号：US11851245
申请日：2007-09-06
申请人： Mark Kiehlbauch , Paul A. Morgan , Gurtej S. Sandhu
发明人： Mark Kiehlbauch , Paul A. Morgan , Gurtej S. Sandhu
IPC分类号： B08B7/00
CPC分类号： H01L21/306 , H01J37/3233 , H01J37/3244 , H01L21/31111 , H01L21/31116
摘要： Some embodiments include utilization of both plasma and aerosol to treat substrate surfaces. The plasma and aerosol may be utilized simultaneously, or sequentially. In some embodiments, the plasma forms a plasma sheath over the substrate surfaces, with the plasma sheath having an electric field gradient therein. The aerosol comprises liquid particles charged to a polarity, and such polarity is transferred to contaminants on the substrate surfaces through interaction with the aerosol. The polarity may be used to assist in dislodging the contaminants from the substrate surfaces. The electric field of the plasma sheath may then sweep the contaminants away from the substrate surfaces. In some embodiments, multiple different aerosols are formed to remove multiple different types of materials from substrate surfaces. Some embodiments include apparatuses configured for treating substrate surfaces with both plasma and aerosol.
摘要翻译：一些实施例包括利用等离子体和气溶胶来处理衬底表面。等离子体和气溶胶可以同时或顺序地使用。在一些实施例中，等离子体在衬底表面上形成等离子体护套，等离子体护套在其中具有电场梯度。气雾剂包含充电到极性的液体颗粒，并且这种极性通过与气溶胶的相互作用转移到基底表面上的污染物。极性可用于帮助从衬底表面移除污染物。然后，等离子体护套的电场可以将污染物从衬底表面扫除。在一些实施例中，形成多个不同的气溶胶以从基底表面去除多种不同类型的材料。一些实施例包括被配置用于用等离子体和气溶胶两者处理衬底表面的装置。

2. 发明授权

US08183154B2 Selective metal deposition over dielectric layers 有权
标题翻译：介电层上的选择性金属沉积
公开(公告)号：US08183154B2
公开(公告)日：2012-05-22
申请号：US13043680
申请日：2011-03-09
申请人： Paul A Morgan , Nishant Sinha
发明人： Paul A Morgan , Nishant Sinha
IPC分类号： H01L21/44
CPC分类号： H01L21/283 , H01L21/76802 , H01L21/76834 , H01L21/76879
摘要： Selective deposition of metal over dielectric layers in a manner that minimizes or eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured to allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over the substrate layer.
摘要翻译：提供了以最小化或消除钥匙孔形成的方式在电介质层上选择性沉积金属。根据一个实施例，介电目标层形成在衬底层上，其中目标层可以被配置为允许保形金属沉积，并且在目标层上形成介电第二层，其中第二层可以被配置为允许自下而上的金属沉积。然后可以在第二层中形成开口，并且可以在衬底层上选择性地沉积金属。

3. 发明授权

US07585782B2 Methods of forming semiconductor constructions, and methods of selectively removing metal-containing materials relative to oxide 失效
标题翻译：形成半导体结构的方法以及相对于氧化物选择性除去含金属材料的方法
公开(公告)号：US07585782B2
公开(公告)日：2009-09-08
申请号：US11402698
申请日：2006-04-11
申请人： Joseph N. Greeley , Paul A. Morgan
发明人： Joseph N. Greeley , Paul A. Morgan
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/7684 , H01L21/32134 , H01L21/76865 , H01L21/76883
摘要： The invention includes methods of selectively removing metal-containing copper barrier materials (such as tantalum-containing materials, titanium-containing materials and tungsten-containing materials) relative to oxide (such as silicon dioxide) and/or copper. The selective removal can utilize etchant solutions containing hydrofluoric acid and one or more carboxylic acids. The etchant solutions can contain less than 6 weight percent water, and/or can have a dielectric constant below 40.
摘要翻译：本发明包括相对于氧化物（例如二氧化硅）和/或铜选择性除去含金属铜阻挡材料（例如含钽材料，含钛材料和含钨材料）的方法。选择性去除可以使用含有氢氟酸和一种或多种羧酸的蚀刻剂溶液。蚀刻剂溶液可以含有少于6重量％的水，和/或可以具有低于40的介电常数。

4. 发明申请

US20090065026A1 Methods For Treating Surfaces, Methods For Removing One Or More Materials from Surfaces, And Apparatuses For Treating Surfaces 有权
标题翻译：用于处理表面的方法，从表面去除一种或多种材料的方法以及用于处理表面的装置
公开(公告)号：US20090065026A1
公开(公告)日：2009-03-12
申请号：US11851245
申请日：2007-09-06
申请人： Mark Kiehlbauch , Paul A. Morgan , Gurtej S. Sandhu
发明人： Mark Kiehlbauch , Paul A. Morgan , Gurtej S. Sandhu
IPC分类号： C25F3/30 , B05C5/00
CPC分类号： H01L21/306 , H01J37/3233 , H01J37/3244 , H01L21/31111 , H01L21/31116
摘要： Some embodiments include utilization of both plasma and aerosol to treat substrate surfaces. The plasma and aerosol may be utilized simultaneously, or sequentially. In some embodiments, the plasma forms a plasma sheath over the substrate surfaces, with the plasma sheath having an electric field gradient therein. The aerosol comprises liquid particles charged to a polarity, and such polarity is transferred to contaminants on the substrate surfaces through interaction with the aerosol. The polarity may be used to assist in dislodging the contaminants from the substrate surfaces. The electric field of the plasma sheath may then sweep the contaminants away from the substrate surfaces. In some embodiments, multiple different aerosols are formed to remove multiple different types of materials from substrate surfaces. Some embodiments include apparatuses configured for treating substrate surfaces with both plasma and aerosol.
摘要翻译：一些实施例包括利用等离子体和气溶胶来处理衬底表面。等离子体和气溶胶可以同时或顺序地使用。在一些实施例中，等离子体在衬底表面上形成等离子体护套，等离子体护套在其中具有电场梯度。气雾剂包含充电到极性的液体颗粒，并且这种极性通过与气溶胶的相互作用转移到基底表面上的污染物。极性可用于帮助从衬底表面移除污染物。然后，等离子体护套的电场可以将污染物从衬底表面扫除。在一些实施例中，形成多个不同的气溶胶以从基底表面去除多种不同类型的材料。一些实施例包括被配置用于用等离子体和气溶胶两者处理衬底表面的装置。

5. 发明授权

US06867148B2 Removal of organic material in integrated circuit fabrication using ozonated organic acid solutions 失效
标题翻译：使用臭氧化有机酸溶液去除集成电路制造中的有机材料
公开(公告)号：US06867148B2
公开(公告)日：2005-03-15
申请号：US09858980
申请日：2001-05-16
申请人： Donald L. Yates , Paul A. Morgan
发明人： Donald L. Yates , Paul A. Morgan
IPC分类号： B08B3/08 , G03F7/42 , H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/02071 , B08B3/08 , B08B2203/005 , G03F7/423 , H01L21/31133
摘要： Organic acid components are used to increase the solubility of ozone in aqueous solutions for use in removing organic materials, such as polymeric resist and/or post-etch residues, from the surface of an integrated circuit device during fabrication. Each organic acid component is preferably chosen for its metal-passivating effect. Such solutions can have significantly lower corrosion rates when compared to ozonated aqueous solutions using common inorganic acids for ozone solubility enhancement due to the passivating effect of the organic acid component.
摘要翻译：有机酸组分用于增加臭氧在水溶液中的溶解度，用于在制造期间从集成电路器件的表面去除有机材料，例如聚合物抗蚀剂和/或蚀刻后残留物。优选选择每种有机酸组分用于其金属钝化作用。与使用普通无机酸进行臭氧溶解度增强的臭氧化水溶液相比，由于有机酸组分的钝化作用，这种溶液可以具有显着更低的腐蚀速率。

6. 发明授权

US06787450B2 High aspect ratio fill method and resulting structure 有权
标题翻译：高纵横比填充方法和结果
公开(公告)号：US06787450B2
公开(公告)日：2004-09-07
申请号：US10156097
申请日：2002-05-29
申请人： Nishant Sinha , Paul A. Morgan
发明人： Nishant Sinha , Paul A. Morgan
IPC分类号： H01L214763
CPC分类号： H01L21/76889 , H01L21/28518 , H01L21/288 , H01L21/76843 , H01L21/76855 , H01L21/76879
摘要： A method is described for filling of high aspect ratio contact vias provided over silicon containing areas. A via is formed in an insulating layer over the silicon containing area and a silicide forming material is deposited in the via. A silicide region is formed over the silicon containing area, the silicide forming material is removed from the via leaving the silicide region. The via is then filled with a conductor using an electroless plating process.
摘要翻译：描述了一种用于填充在含硅区域上提供的高纵横比接触孔的方法。通孔在含硅区域上的绝缘层中形成，并且硅化物形成材料沉积在通孔中。在含硅区域上形成硅化物区域，从离开硅化物区域的通孔去除硅化物形成材料。然后使用无电镀工艺用导体填充导体。

7. 发明授权

US06653243B2 Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates 有权
标题翻译：清洗含铜材料表面的方法以及向含铜基材形成开口的方法
公开(公告)号：US06653243B2
公开(公告)日：2003-11-25
申请号：US09579333
申请日：2000-05-25
申请人： Paul A. Morgan
发明人： Paul A. Morgan
IPC分类号： H01L21461
CPC分类号： H01L21/02071 , C11D7/08 , C11D11/0047 , H01L21/31116 , H01L21/32134 , H01L21/76802 , H01L21/76814 , H01L21/76838
摘要： The invention encompasses a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising Cl+, NO3+ and F+. The invention also includes a semiconductor processing method of forming an opening to a copper-containing substrate. Initially, a mass is formed over the copper-containing substrate. The mass comprises at least one of a silicon nitride and a silicon oxide. An opening is etched through the mass and to the copper-containing substrate. A surface of the copper-containing substrate defines a base of the opening, and is referred to as a base surface. The base surface of the copper-containing substrate is at least partially covered by at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a cleaning solution comprising hydrochloric acid, nitric acid and hydrofluoric acid to remove at least some of the at least one of a copper oxide, a silicon oxide or a copper fluoride from over the base surface.
摘要翻译：本发明包括通过将表面暴露于包含Cl +，NO 3 +和F +的酸性混合物来清洗含铜材料的表面的半导体加工方法。本发明还包括形成对含铜基板的开口的半导体加工方法。最初，在含铜基板上形成质量。质量包括氮化硅和氧化硅中的至少一种。通过该质量体和含铜衬底蚀刻开口。含铜基材的表面限定了开口的基部，并且被称为基底表面。含铜基材的基面至少部分被铜氧化物，氧化硅或氟化铜中的至少一种覆盖。用包含盐酸，硝酸和氢氟酸的清洗溶液清洗基面，从基底表面上除去铜氧化物，氧化硅或氟化铜中的至少一种。

8. 发明授权

US06290863B1 Method and apparatus for etch of a specific subarea of a semiconductor work object 有权
标题翻译：用于蚀刻半导体工件的特定子区域的方法和装置
公开(公告)号：US06290863B1
公开(公告)日：2001-09-18
申请号：US09364980
申请日：1999-07-31
申请人： Paul A. Morgan , Kevin Torek
发明人： Paul A. Morgan , Kevin Torek
IPC分类号： B44C122
CPC分类号： H01L21/6708
摘要： The present invention provides a dynamic-flow system that uses a vacuum to pull an etchant or other processing agent through a nozzle onto the surface of the work object. The processing agent can only communicate with the vacuum and be pulled onto the wafer surface when the nozzle is sealed against the work object. Therefore, the processing agent is dispensed onto the surface of the wafer or other work object under a negative rather than a positive pressure. Accordingly, the dispensation of the processing agent is self-stopping in the event that seal of the nozzle against the work object fails. The present invention also provides a novel nozzle for dispensing a processing agent onto a selected area of a work object. The nozzle of the present invention provides a substantially unidirectional flow of processing agent along the surface of a work object and maximizes the contact time of the processing agent at the surface of the work object. This unidirectional flow leads to uniform process results, including better control of etching depth.
摘要翻译：本发明提供一种动态流动系统，其使用真空将蚀刻剂或其它处理剂通过喷嘴拉到工件的表面上。处理剂只能与真空通气，并且当喷嘴与工作对象密封时，其被拉到晶片表面上。因此，处理剂在负压而不是正压下被分配到晶片或其它工件上。因此，在针对工作对象的喷嘴的密封失效的情况下，处理剂的分配是自动停止的。本发明还提供了一种用于将加工剂分配到工作对象的选定区域上的新型喷嘴。本发明的喷嘴提供沿着工作对象表面的基本上单向的处理剂流，并且使加工剂在工件的表面处的接触时间最大化。这种单向流动导致均匀的工艺结果，包括更好地控制蚀刻深度。

9. 发明申请

US20130084699A1 Selective Metal Deposition Over Dielectric Layers 有权
标题翻译：电介质层上的选择性金属沉积
公开(公告)号：US20130084699A1
公开(公告)日：2013-04-04
申请号：US13686107
申请日：2012-11-27
申请人： Paul A. Morgan , Nishant Sinha
发明人： Paul A. Morgan , Nishant Sinha
IPC分类号： H01L21/283
CPC分类号： H01L21/283 , H01L21/76802 , H01L21/76834 , H01L21/76879
摘要： Selective deposition of metal over dielectric layers in a manner that minimizes of eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured as allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over substrate layer.
摘要翻译：提供金属在电介质层上的选择性沉积，以最小化消除键孔形成的方式。根据一个实施例，介电目标层形成在衬底层上，其中目标层可以被配置为允许保形金属沉积，并且在目标层上形成电介质第二层，其中第二层可被配置为允许自下而上的金属沉积。然后可以在第二层中形成开口，并且可以在衬底层上选择性地沉积金属。

10. 发明授权

US08338297B2 Selective metal deposition over dielectric layers 有权
标题翻译：介电层上的选择性金属沉积
公开(公告)号：US08338297B2
公开(公告)日：2012-12-25
申请号：US13466349
申请日：2012-05-08
申请人： Paul A Morgan , Nishant Sinha
发明人： Paul A Morgan , Nishant Sinha
IPC分类号： H01L21/44
CPC分类号： H01L21/283 , H01L21/76802 , H01L21/76834 , H01L21/76879
摘要： Selective deposition of metal over dielectric layers in a manner that minimizes of eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured as allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over substrate layer.
摘要翻译：提供金属在电介质层上的选择性沉积，以最小化消除键孔形成的方式。根据一个实施例，介电目标层形成在衬底层上，其中目标层可以被配置为允许保形金属沉积，并且在目标层上形成电介质第二层，其中第二层可被配置为允许自下而上的金属沉积。然后可以在第二层中形成开口，并且可以在衬底层上选择性地沉积金属。

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