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    • 6. 发明申请
    • FRACTIONAL RESOLUTION INTEGER-N FREQUENCY SYNTHESIZER
    • 分数分解整数N频率合成器
    • US20100073052A1
    • 2010-03-25
    • US12563790
    • 2009-09-21
    • Jaehyouk ChoiJongmin ParkKyutae LimChang-Ho LeeHaksun KimJoy Laskar
    • Jaehyouk ChoiJongmin ParkKyutae LimChang-Ho LeeHaksun KimJoy Laskar
    • H03L7/08
    • H03L7/185H03L7/0891H03L2207/10
    • Embodiments of the invention may provide for a frequency synthesizer capable to generate an output signal in which the frequency is a fractional portion of the reference frequency without a fractional divider. Based on mathematical relationship (“relatively prime”) between the reference frequency and other injection frequencies mixed with the output signal of a voltage controlled oscillator, the synthesizer is able to generate signals evenly spaced in the frequency domain like Fractional-N PLLs. The synthesizer may include an Integer-N PLL, a SSB mixer, frequency dividers, and frequency multipliers. A Integer-N PLL may include a Phase and Frequency Detector, a Charge Pump, a Loop Filter and a Dual Modulus Divider. By not requiring a fractional divider, the frequency synthesizer is able to avoid adopting any compensation circuits such as Sigma-Delta modulator to suppress fractional spurs. Therefore, the chip area, power consumption and complexity will be reduced considerably.
    • 本发明的实施例可以提供能够产生输出信号的频率合成器,其中频率是参考频率的小数部分而没有分数分频器。 基于与压控振荡器的输出信号混合的参考频率和其他注入频率之间的数学关系(“相对主要”),合成器能够在频域中产生均匀间隔的信号,如分数N PLL。 合成器可以包括整数N PLL,SSB混频器,分频器和频率乘法器。 整数N PLL可以包括相位和频率检测器,电荷泵,环路滤波器和双模数分频器。 通过不需要分数分频器,频率合成器能够避免采用诸如Sigma-Delta调制器之类的任何补偿电路来抑制分数杂散。 因此,芯片面积,功耗和复杂度将大大降低。
    • 8. 发明授权
    • Non-volatile memory and method having a memory array with a high-speed, short bit-line portion
    • 具有具有高速,短位线部分的存储器阵列的非易失性存储器和方法
    • US08760957B2
    • 2014-06-24
    • US13431670
    • 2012-03-27
    • Seungpil LeeJongmin Park
    • Seungpil LeeJongmin Park
    • G11C8/00G11C16/04G11C11/56
    • G11C16/0483G11C7/18G11C11/5621G11C16/0425G11C16/0433G11C2211/5641
    • A non-volatile memory array is partitioned along the column direction into first and second portions. The first portion has SLC memory cells and the second portion has MLC memory cells. The first portion acts as a fast cache memory for the second portion. The read/write operations of the first portion are further enhanced by coupling to a set of read/write circuits immediately adjacent to the first portion, while the column of each bit line is switchably cut off at the junction between the first and second portions. In this way, the RC constant of the cut off bit line is at a minimum, which translates to faster precharge of the bit line via the read/write circuits. When the second portion is operating, its access to the set of read/write circuits is accomplished by not cutting off each bit line at the junction between the first and second portions.
    • 沿着列方向将非易失性存储器阵列分割成第一和第二部分。 第一部分具有SLC存储单元,第二部分具有MLC存储单元。 第一部分用作第二部分的快速缓存。 通过耦合到与第一部分相邻的一组读/写电路,第一部分的读/写操作进一步增强,同时每个位线的列在第一和第二部分之间的连接处可切换地切断。 以这种方式,截止位线的RC常数处于最小值,这通过读/写电路转换为更快的位线预充电。 当第二部分工作时,其通过不切断第一和第二部分之间的连接处的每个位线来实现对该组读/写电路的访问。