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    • 2. 发明申请
    • Transistor using impact ionization and method of manufacturing the same
    • 使用冲击电离的晶体管及其制造方法
    • US20060125041A1
    • 2006-06-15
    • US11296152
    • 2005-12-06
    • Jong YangIn BaekKi ImChang AhnWon ChoSeong Lee
    • Jong YangIn BaekKi ImChang AhnWon ChoSeong Lee
    • H01L27/095
    • H01L29/66659H01L21/26586H01L21/28052H01L21/28202H01L29/495H01L29/518H01L29/665H01L29/66643H01L29/7835H01L29/7839
    • A transistor using impact ionization and a method of manufacturing the same are provided. A gate dielectric layer, a gate, and first and second spacers are formed on a semiconductor substrate. A first impurity layer is formed spaced from the first spacer and a second impurity layer is formed expanding and overlapping with the second spacer therebelow, by performing slant ion-implantation on the semiconductor substrate using the gate and the first and second spacers as a mask. A source and a drain are formed on the semiconductor substrate to be self-aligned with the first and second spacers, respectively, thereby defining an ionization region between the source and the drain in the semiconductor substrate. The source includes a first silicide layer to form a schottky junction with the ionization region. The drain includes a portion of the second impurity layer overlapping with the second spacer and a second silicide layer which is aligned with the second spacer to form an ohmic contact with the second impurity layer.
    • 提供了使用冲击电离的晶体管及其制造方法。 栅极电介质层,栅极以及第一和第二间隔物形成在半导体衬底上。 第一杂质层与第一间隔物隔开形成,并且通过使用栅极和第一和第二间隔物作为掩模在半导体衬底上进行倾斜离子注入,形成第二杂质层与其间的第二间隔物膨胀和重叠。 源极和漏极分别形成在半导体衬底上以与第一和第二间隔物自对准,由此在半导体衬底中的源极和漏极之间限定电离区域。 源包括与电离区形成肖特基结的第一硅化物层。 漏极包括与第二间隔物重叠的第二杂质层的一部分和与第二间隔物对准的第二硅化物层以与第二杂质层形成欧姆接触。
    • 10. 发明授权
    • Backlight unit
    • 背光单元
    • US08193721B2
    • 2012-06-05
    • US12415381
    • 2009-03-31
    • Won ChoBi-Yong Jeong
    • Won ChoBi-Yong Jeong
    • H05B41/16
    • H05B33/0821G02F1/133603G02F1/133609H01L25/0753H01L33/50H01L2924/0002H05B33/0857H01L2924/00
    • The present invention relates to a backlight unit that includes at least one first light emitting diode (LED) package and at least one second LED package, wherein the first LED package includes a blue LED chip, a green LED chip, and a first phosphor, the first phosphor being excited by blue light and to emit light to be mixed with blue light and green light respectively emitted from the blue LED chip and the green LED chip, the first LED package to thereby emit white light; the second LED package includes a blue LED chip, a red LED chip, and a second phosphor, the second phosphor being excited by blue light and to emit light to be mixed with blue light and red light respectively emitted from the blue LED chip and the red LED chip, the second LED package to thereby emit white light; and the first LED package and the second LED package are alternately arranged.
    • 本发明涉及一种背光单元,其包括至少一个第一发光二极管(LED)封装和至少一个第二LED封装,其中所述第一LED封装包括蓝色LED芯片,绿色LED芯片和第一荧光体, 第一荧光体被蓝光激发,并且发射与蓝色LED芯片和绿色LED芯片分别发射的蓝色光和绿色光混合的光,该第一LED封装从而发出白色光; 所述第二LED封装包括蓝色LED芯片,红色LED芯片和第二荧光体,所述第二荧光体被蓝色光激发并发射与蓝色LED芯片分别发出的蓝色光和红色光混合的光, 红色LED芯片,第二个LED封装,从而发出白光; 并且第一LED封装和第二LED封装交替布置。