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1. 发明授权

US07807064B2 Halogen-free amorphous carbon mask etch having high selectivity to photoresist 失效
标题翻译：对光致抗蚀剂具有高选择性的无卤无定形碳掩模蚀刻
公开(公告)号：US07807064B2
公开(公告)日：2010-10-05
申请号：US11689389
申请日：2007-03-21
申请人： Jong Mun Kim , Judy Wang , Ajey M. Joshi , Jingbao Liu , Bryan Y. Pu
发明人： Jong Mun Kim , Judy Wang , Ajey M. Joshi , Jingbao Liu , Bryan Y. Pu
IPC分类号： B44C1/22
CPC分类号： H01L21/31122 , H01L21/0273 , H01L21/0332 , H01L21/31138 , H01L21/31144
摘要： In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.
摘要翻译：在本发明的一个实施例中，使用无卤等离子体蚀刻工艺来定义包括无定形碳层的多层掩模叠层中的特征。在一个具体实施方案中，使用氧（O 2），氮（N 2）和一氧化碳（CO）来蚀刻无定形碳层以形成能够在具有减小的线边缘的基底膜中产生亚100nm特征的掩模粗糙度值。在另一个实施方案中，本发明采用在无卤无定形碳蚀刻之前的O 2等离子体预处理，首先在图案化光致抗蚀剂层中形成氧化硅区，以增加无定形碳蚀刻相对于含有未氧化硅的图案化光致抗蚀剂层的选择性。

2. 发明申请

US20080230511A1 HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO PHOTORESIST 失效
标题翻译：无色无机非晶碳片具有高选择性的光刻胶
公开(公告)号：US20080230511A1
公开(公告)日：2008-09-25
申请号：US11689389
申请日：2007-03-21
申请人： Jong Mun Kim , Judy Wang , Ajey M. Joshi , Jingbao Liu , Bryan Y. Pu
发明人： Jong Mun Kim , Judy Wang , Ajey M. Joshi , Jingbao Liu , Bryan Y. Pu
IPC分类号： B44C1/22
CPC分类号： H01L21/31122 , H01L21/0273 , H01L21/0332 , H01L21/31138 , H01L21/31144
摘要： In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.
摘要翻译：在本发明的一个实施例中，使用无卤等离子体蚀刻工艺来定义包括无定形碳层的多层掩模叠层中的特征。在一个具体实施方案中，使用氧（O 2 H 2），氮（N 2 H 2）和一氧化碳（CO）来蚀刻无定形碳层以形成掩模在具有降低的线边缘粗糙度值的基底膜中产生亚100nm特征。在另一个实施方案中，本发明采用在无卤无定形碳蚀刻之前的O 2等离子体预处理，首先在图案化的光致抗蚀剂层中形成氧化的硅区，以增加无定形碳蚀刻相对的选择性涉及含有未氧化硅的图案化光致抗蚀剂层。

3. 发明授权

US08187415B2 Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone 有权
标题翻译：等离子体蚀刻反应器，其分布在晶片表面上的蚀刻气体和独立进料的中心气体区域中的聚合物氧化气体
公开(公告)号：US08187415B2
公开(公告)日：2012-05-29
申请号：US11490936
申请日：2006-07-21
申请人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
发明人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
IPC分类号： H01L21/205 , H01L21/28
CPC分类号： H01J37/321 , H01J37/3244
摘要： A plasma etch reactor for plasma enhanced etching of a workpiece such as a semiconductor wafer includes a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes a first process gas inlet coupled to receive predominantly or pure oxygen gas and a second process gas inlet coupled to receive a polymerizing etch process gas. The reactor has a ceiling plasma source power electrode including a center circular gas disperser configured to receive a process gas from the first process gas inlet and to distribute the process gas into the chamber over the workpiece, and an inner annular gas disperser centered around the center gas disperser configured to receive the process gas from the second process gas inlet and to distribute the process gas into the chamber over the workpiece through an inner plurality of injection ports.
摘要翻译：用于等离子体等离子体蚀刻反应器对诸如半导体晶片的工件进行增强蚀刻，包括限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。反应器还包括耦合以接收主要或纯氧气的第一工艺气体入口和耦合以接收聚合蚀刻工艺气体的第二工艺气体入口。反应器具有天花板等离子体源功率电极，其包括中心圆形气体分散器，该中心圆形气体分散器构造成从第一工艺气体入口接收工艺气体并将工艺气体分配到工件上方的室中，并且以中心为中心的内部环形气体分散器气体分散器被配置为从第二处理气体入口接收处理气体，并且通过内部多个注入口将工艺气体分配到工件上方的腔室中。

4. 发明申请

US20070249173A1 Plasma etch process using etch uniformity control by using compositionally independent gas feed 审中-公开
标题翻译：使用组成独立气体进料的等离子蚀刻工艺，使用蚀刻均匀性控制
公开(公告)号：US20070249173A1
公开(公告)日：2007-10-25
申请号：US11490885
申请日：2006-07-21
申请人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
发明人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/76816 , H01J37/32091 , H01J37/32165 , H01J37/32449 , H01J37/3266
摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an inner annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power to the ceiling electrode and HF and/or LF bias power to an electrode within the electrostatic chuck. The process further includes slowing the deposition rate of the polymer near the workpiece center by injecting oxygen gas through a center or inner gas injection orifices in the center region of the ceiling electrode, and adjusting the flow rate of the oxygen gas through the center or inner gas injection orifices to minimize the difference between etch depths at the workpiece center and the workpiece periphery.
摘要翻译：等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的内部环形区域，以及通过围绕工件边缘的泵送环将反应器中的气体排出。通过在蚀刻工艺气体中产生蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，在电介质膜中蚀刻高纵横比开口，通过在天线电极中施加VHF源功率在反应器中产生等离子体和HF和/或LF偏压电力到静电卡盘内的电极。该方法还包括通过将天然气电极的中心区域中的中心区域或内部气体注入孔注入氧气来减缓聚合物靠近工件中心的沉积速率，并且调节通过中心或内部的氧气的流速气体注入孔，以最小化工件中心和工件周边处的蚀刻深度之间的差异。

5. 发明申请

US20070247075A1 Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone 有权
标题翻译：等离子体蚀刻反应器，其分布在晶片表面上的蚀刻气体和独立进料的中心气体区域中的聚合物氧化气体
公开(公告)号：US20070247075A1
公开(公告)日：2007-10-25
申请号：US11490936
申请日：2006-07-21
申请人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
发明人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01J37/3244
摘要： A plasma etch reactor for plasma enhanced etching of a workpiece such as a semiconductor wafer includes a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes a first process gas inlet coupled to receive predominantly or pure oxygen gas and a second process gas inlet coupled to receive a polymerizing etch process gas. The reactor has a ceiling plasma source power electrode including a center circular gas disperser configured to receive a process gas from the first process gas inlet and to distribute the process gas into the chamber over the workpiece, and an inner annular gas disperser centered around the center gas disperser configured to receive the process gas from the second process gas inlet and to distribute the process gas into the chamber over the workpiece through an inner plurality of injection ports.
摘要翻译：用于等离子体等离子体蚀刻反应器对诸如半导体晶片的工件进行增强蚀刻，包括限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。反应器还包括耦合以接收主要或纯氧气的第一工艺气体入口和耦合以接收聚合蚀刻工艺气体的第二工艺气体入口。反应器具有天花板等离子体源功率电极，其包括中心圆形气体分散器，该中心圆形气体分散器构造成从第一工艺气体入口接收工艺气体并将工艺气体分配到工件上方的室中，并且以中心为中心的内部环形气体分散器气体分散器被配置为从第二处理气体入口接收处理气体，并且通过内部多个注入口将工艺气体分配到工件上方的腔室中。

6. 发明授权

US07736914B2 Plasma control using dual cathode frequency mixing and controlling the level of polymer formation 失效
标题翻译：等离子体控制采用双阴极混合和控制聚合物形成的水平
公开(公告)号：US07736914B2
公开(公告)日：2010-06-15
申请号：US11947663
申请日：2007-11-29
申请人： Jingbao Liu , Taeho Shin , Bryan Y. Pu
发明人： Jingbao Liu , Taeho Shin , Bryan Y. Pu
IPC分类号： H01L21/00 , H01L21/66 , H01L21/20
CPC分类号： H01J37/32165 , H01J37/32091 , H01L21/31116 , H01L21/31144 , H01L21/67069 , H01L22/20
摘要： Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.
摘要翻译：本文提供了使用双RF频率处理处理室中的衬底的方法。在一些实施例中，处理衬底的方法包括形成形成化学的聚合物的等离子体，以将特征蚀刻到设置在处理室中的衬底支撑件上的衬底中，同时在被蚀刻的特征的至少部分上沉积聚合物。将低频和高频RF信号施加到设置在基板支架中的电极。该方法还包括控制在基底上聚合物形成的水平，其中控制聚合物形成的水平包括调整高频与低频RF信号的功率比。

7. 发明授权

US06613689B2 Magnetically enhanced plasma oxide etch using hexafluorobutadiene 失效
公开(公告)号：US06613689B2
公开(公告)日：2003-09-02
申请号：US10144365
申请日：2002-05-13
申请人： Jingbao Liu , Takehiko Komatsu , Hongqing Shan , Keji Horioka , Bryan Y Pu
发明人： Jingbao Liu , Takehiko Komatsu , Hongqing Shan , Keji Horioka , Bryan Y Pu
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01L21/76802
摘要： An oxide etch process practiced in a plasma etch reactor, such as a magnetically enhanced reactive ion etch (MERIE) reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.

8. 发明申请

US20090008033A1 METHOD AND APPARATUS FOR SHAPING A MAGNETIC FIELD IN A MAGNETIC FIELD-ENHANCED PLASMA REACTOR 失效
标题翻译：在磁场增强等离子体反应器中形成磁场的方法和装置
公开(公告)号：US20090008033A1
公开(公告)日：2009-01-08
申请号：US12204408
申请日：2008-09-04
申请人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
发明人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
IPC分类号： C23F1/08 , B05C5/00
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32688
摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.
摘要翻译：提供了提供对磁场的更大控制的磁场发生器。磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

9. 发明授权

US07879186B2 Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor 失效
标题翻译：用于在磁场增强等离子体反应器中成形磁场的方法和装置
公开(公告)号：US07879186B2
公开(公告)日：2011-02-01
申请号：US12204408
申请日：2008-09-04
申请人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
发明人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32688
摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.
摘要翻译：提供了提供对磁场的更大控制的磁场发生器。磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

10. 发明授权

US07422654B2 Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor 失效
标题翻译：用于在磁场增强等离子体反应器中成形磁场的方法和装置
公开(公告)号：US07422654B2
公开(公告)日：2008-09-09
申请号：US10778933
申请日：2004-02-13
申请人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
发明人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32688
摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.
摘要翻译：提供了提供对磁场的更大控制的磁场发生器。磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

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