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1. 发明授权

US06613689B2 Magnetically enhanced plasma oxide etch using hexafluorobutadiene 失效
公开(公告)号：US06613689B2
公开(公告)日：2003-09-02
申请号：US10144365
申请日：2002-05-13
申请人： Jingbao Liu , Takehiko Komatsu , Hongqing Shan , Keji Horioka , Bryan Y Pu
发明人： Jingbao Liu , Takehiko Komatsu , Hongqing Shan , Keji Horioka , Bryan Y Pu
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01L21/76802
摘要： An oxide etch process practiced in a plasma etch reactor, such as a magnetically enhanced reactive ion etch (MERIE) reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.

2. 发明授权

US06451703B1 Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas 失效
标题翻译：使用重质碳氟化合物蚀刻气体进行磁加强等离子体蚀刻工艺
公开(公告)号：US06451703B1
公开(公告)日：2002-09-17
申请号：US09522374
申请日：2000-03-10
申请人： Jingbao Liu , Takehiko Komatsu , Hongqing Shan , Keji Horioka , Bryan Y Pu
发明人： Jingbao Liu , Takehiko Komatsu , Hongqing Shan , Keji Horioka , Bryan Y Pu
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01L21/76802
摘要： An oxide etch process practiced in magnetically enhanced reactive ion etch (MERIE) plasma reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.
摘要翻译：在磁增强反应离子蚀刻（MERIE）等离子体反应器中实施的氧化物蚀刻工艺。蚀刻气体包括大致相等量的无氢碳氟化合物，最优选C 4 F 6，以及氧气和更大量的氩稀释气体。磁场优选保持在大约50高斯以上，压力在40毫托或更高，室停留时间小于70毫秒。可以使用两步法来蚀刻具有非常高的纵横比的孔。在第二步中，磁场和氧气流减少。其它碳氟化合物可以被取代，其F / C比小于2，更优选不超过1.6或1.5。

3. 发明授权

US06403491B1 Etch method using a dielectric etch chamber with expanded process window 失效
标题翻译：使用具有扩展工艺窗口的电介质蚀刻室的蚀刻方法
公开(公告)号：US06403491B1
公开(公告)日：2002-06-11
申请号：US09704867
申请日：2000-11-01
申请人： Jingbao Liu , Judy Wang , Takehiko Komatsu , Bryan Y Pu , Kenny L Doan , Claes Bjorkman , Melody Chang , Yunsang Kim , Hongching Shan , Ruiping Wang
发明人： Jingbao Liu , Judy Wang , Takehiko Komatsu , Bryan Y Pu , Kenny L Doan , Claes Bjorkman , Melody Chang , Yunsang Kim , Hongching Shan , Ruiping Wang
IPC分类号： H01L213065
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanation is provided for enablling the use of hexafluoro-1,3-butadiene in a capacitively coupled etch plasma. The method is very useful for creating via, self aligned contacts, dual damascene, and other dielectric etch.
摘要翻译：一种用于在具有扩展的处理窗口的热控等离子体蚀刻室中蚀刻电介质的方法。该方法适于结合腔室的热控制和高排气能力的优点。 Etchent气体包括碳氢化合物，氧气和惰性气体。提供了解释在电容耦合蚀刻等离子体中使用六氟-1,3-丁二烯的方法。该方法对于创建通孔，自对准触点，双镶嵌和其他电介质蚀刻非常有用。

4. 发明授权

US07736914B2 Plasma control using dual cathode frequency mixing and controlling the level of polymer formation 失效
标题翻译：等离子体控制采用双阴极混合和控制聚合物形成的水平
公开(公告)号：US07736914B2
公开(公告)日：2010-06-15
申请号：US11947663
申请日：2007-11-29
申请人： Jingbao Liu , Taeho Shin , Bryan Y. Pu
发明人： Jingbao Liu , Taeho Shin , Bryan Y. Pu
IPC分类号： H01L21/00 , H01L21/66 , H01L21/20
CPC分类号： H01J37/32165 , H01J37/32091 , H01L21/31116 , H01L21/31144 , H01L21/67069 , H01L22/20
摘要： Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.
摘要翻译：本文提供了使用双RF频率处理处理室中的衬底的方法。在一些实施例中，处理衬底的方法包括形成形成化学的聚合物的等离子体，以将特征蚀刻到设置在处理室中的衬底支撑件上的衬底中，同时在被蚀刻的特征的至少部分上沉积聚合物。将低频和高频RF信号施加到设置在基板支架中的电极。该方法还包括控制在基底上聚合物形成的水平，其中控制聚合物形成的水平包括调整高频与低频RF信号的功率比。

5. 发明授权

US07807064B2 Halogen-free amorphous carbon mask etch having high selectivity to photoresist 失效
标题翻译：对光致抗蚀剂具有高选择性的无卤无定形碳掩模蚀刻
公开(公告)号：US07807064B2
公开(公告)日：2010-10-05
申请号：US11689389
申请日：2007-03-21
申请人： Jong Mun Kim , Judy Wang , Ajey M. Joshi , Jingbao Liu , Bryan Y. Pu
发明人： Jong Mun Kim , Judy Wang , Ajey M. Joshi , Jingbao Liu , Bryan Y. Pu
IPC分类号： B44C1/22
CPC分类号： H01L21/31122 , H01L21/0273 , H01L21/0332 , H01L21/31138 , H01L21/31144
摘要： In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.
摘要翻译：在本发明的一个实施例中，使用无卤等离子体蚀刻工艺来定义包括无定形碳层的多层掩模叠层中的特征。在一个具体实施方案中，使用氧（O 2），氮（N 2）和一氧化碳（CO）来蚀刻无定形碳层以形成能够在具有减小的线边缘的基底膜中产生亚100nm特征的掩模粗糙度值。在另一个实施方案中，本发明采用在无卤无定形碳蚀刻之前的O 2等离子体预处理，首先在图案化光致抗蚀剂层中形成氧化硅区，以增加无定形碳蚀刻相对于含有未氧化硅的图案化光致抗蚀剂层的选择性。

6. 发明申请

US20090008033A1 METHOD AND APPARATUS FOR SHAPING A MAGNETIC FIELD IN A MAGNETIC FIELD-ENHANCED PLASMA REACTOR 失效
标题翻译：在磁场增强等离子体反应器中形成磁场的方法和装置
公开(公告)号：US20090008033A1
公开(公告)日：2009-01-08
申请号：US12204408
申请日：2008-09-04
申请人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
发明人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
IPC分类号： C23F1/08 , B05C5/00
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32688
摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.
摘要翻译：提供了提供对磁场的更大控制的磁场发生器。磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

7. 发明申请

US20080230511A1 HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO PHOTORESIST 失效
标题翻译：无色无机非晶碳片具有高选择性的光刻胶
公开(公告)号：US20080230511A1
公开(公告)日：2008-09-25
申请号：US11689389
申请日：2007-03-21
申请人： Jong Mun Kim , Judy Wang , Ajey M. Joshi , Jingbao Liu , Bryan Y. Pu
发明人： Jong Mun Kim , Judy Wang , Ajey M. Joshi , Jingbao Liu , Bryan Y. Pu
IPC分类号： B44C1/22
CPC分类号： H01L21/31122 , H01L21/0273 , H01L21/0332 , H01L21/31138 , H01L21/31144
摘要： In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.
摘要翻译：在本发明的一个实施例中，使用无卤等离子体蚀刻工艺来定义包括无定形碳层的多层掩模叠层中的特征。在一个具体实施方案中，使用氧（O 2 H 2），氮（N 2 H 2）和一氧化碳（CO）来蚀刻无定形碳层以形成掩模在具有降低的线边缘粗糙度值的基底膜中产生亚100nm特征。在另一个实施方案中，本发明采用在无卤无定形碳蚀刻之前的O 2等离子体预处理，首先在图案化的光致抗蚀剂层中形成氧化的硅区，以增加无定形碳蚀刻相对的选择性涉及含有未氧化硅的图案化光致抗蚀剂层。

8. 发明授权

US08187415B2 Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone 有权
标题翻译：等离子体蚀刻反应器，其分布在晶片表面上的蚀刻气体和独立进料的中心气体区域中的聚合物氧化气体
公开(公告)号：US08187415B2
公开(公告)日：2012-05-29
申请号：US11490936
申请日：2006-07-21
申请人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
发明人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
IPC分类号： H01L21/205 , H01L21/28
CPC分类号： H01J37/321 , H01J37/3244
摘要： A plasma etch reactor for plasma enhanced etching of a workpiece such as a semiconductor wafer includes a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes a first process gas inlet coupled to receive predominantly or pure oxygen gas and a second process gas inlet coupled to receive a polymerizing etch process gas. The reactor has a ceiling plasma source power electrode including a center circular gas disperser configured to receive a process gas from the first process gas inlet and to distribute the process gas into the chamber over the workpiece, and an inner annular gas disperser centered around the center gas disperser configured to receive the process gas from the second process gas inlet and to distribute the process gas into the chamber over the workpiece through an inner plurality of injection ports.
摘要翻译：用于等离子体等离子体蚀刻反应器对诸如半导体晶片的工件进行增强蚀刻，包括限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。反应器还包括耦合以接收主要或纯氧气的第一工艺气体入口和耦合以接收聚合蚀刻工艺气体的第二工艺气体入口。反应器具有天花板等离子体源功率电极，其包括中心圆形气体分散器，该中心圆形气体分散器构造成从第一工艺气体入口接收工艺气体并将工艺气体分配到工件上方的室中，并且以中心为中心的内部环形气体分散器气体分散器被配置为从第二处理气体入口接收处理气体，并且通过内部多个注入口将工艺气体分配到工件上方的腔室中。

9. 发明授权

US07879186B2 Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor 失效
标题翻译：用于在磁场增强等离子体反应器中成形磁场的方法和装置
公开(公告)号：US07879186B2
公开(公告)日：2011-02-01
申请号：US12204408
申请日：2008-09-04
申请人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
发明人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32688
摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.
摘要翻译：提供了提供对磁场的更大控制的磁场发生器。磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

10. 发明授权

US07422654B2 Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor 失效
标题翻译：用于在磁场增强等离子体反应器中成形磁场的方法和装置
公开(公告)号：US07422654B2
公开(公告)日：2008-09-09
申请号：US10778933
申请日：2004-02-13
申请人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
发明人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32688
摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.
摘要翻译：提供了提供对磁场的更大控制的磁场发生器。磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

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