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1. 发明申请

US20100148183A1 Method of Forming a Carbon Nanotube-Based Contact to Semiconductor 有权
标题翻译：与半导体形成碳纳米管接触的方法
公开(公告)号：US20100148183A1
公开(公告)日：2010-06-17
申请号：US12506878
申请日：2009-07-21
申请人： Jonathan W. Ward , Benjamin Schlatka , Michell Meinhold , Robert F. Smith , Brent M. Segal
发明人： Jonathan W. Ward , Benjamin Schlatka , Michell Meinhold , Robert F. Smith , Brent M. Segal
IPC分类号： H01L29/20 , H01L33/00
CPC分类号： H01L33/40 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/417 , H01L29/452 , H01L33/32 , Y10S438/924 , Y10T428/30 , Y10T428/31678
摘要： Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.
摘要翻译：制造商在与通常用于光子应用的半导体材料P型氮化镓（p-GaN）形成低电阻欧姆电接触方面遇到限制，使得接触对器件的发光是高度透明的。碳纳米管（CNT）由于其组合的金属和半导体特性以及CNT的织物具有高的光学透明度的事实，可以解决这个问题。接触方案的物理结构分为三个部分：a）GaN，b）界面材料和c）金属导体。界面材料的作用是使GaN和金属两者适当地接触，这样GaN又将与将器件与外部电路接口的金属导体进行良好的电接触。提供了一种使用CNT和金属制造与GaN接触的方法，同时保持了GaN表面的保护。

2. 发明申请

US20090173964A1 METHOD OF FORMING A CARBON NANOTUBE-BASED CONTACT TO SEMICONDUCTOR 有权
标题翻译：基于碳纳米管的接触到半导体的方法
公开(公告)号：US20090173964A1
公开(公告)日：2009-07-09
申请号：US11708929
申请日：2007-02-21
申请人： Jonathan W. Ward , Benjamin Schlatka , Mitchell Meinhold , Robert F. Smith , Brent M. Segal
发明人： Jonathan W. Ward , Benjamin Schlatka , Mitchell Meinhold , Robert F. Smith , Brent M. Segal
IPC分类号： H01L33/00 , B32B15/04 , B32B9/00 , H01L21/44
CPC分类号： H01L33/40 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/417 , H01L29/452 , H01L33/32 , Y10S438/924 , Y10T428/30 , Y10T428/31678
摘要： Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.
摘要翻译：制造商在与通常用于光子应用的半导体材料P型氮化镓（p-GaN）形成低电阻欧姆电接触方面遇到限制，使得接触对器件的发光是高度透明的。碳纳米管（CNT）由于其组合的金属和半导体特性以及CNT的织物具有高的光学透明度的事实，可以解决这个问题。接触方案的物理结构分为三个部分：a）GaN，b）界面材料和c）金属导体。界面材料的作用是使GaN和金属两者适当地接触，这样GaN又将与将器件与外部电路接口的金属导体进行良好的电接触。提供了一种使用CNT和金属制造与GaN接触的方法，同时保持了GaN表面的保护。

3. 发明授权

US08044388B2 Method of forming a carbon nanotube-based contact to semiconductor 有权
标题翻译：形成与半导体的碳纳米管基接触的方法
公开(公告)号：US08044388B2
公开(公告)日：2011-10-25
申请号：US12506878
申请日：2009-07-21
申请人： Jonathan W. Ward , Benjamin Schlatka , Mitchell Meinhold , Robert F. Smith , Brent M. Segal
发明人： Jonathan W. Ward , Benjamin Schlatka , Mitchell Meinhold , Robert F. Smith , Brent M. Segal
IPC分类号： H01L35/24
CPC分类号： H01L33/40 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/417 , H01L29/452 , H01L33/32 , Y10S438/924 , Y10T428/30 , Y10T428/31678
摘要： Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.
摘要翻译：制造商在与通常用于光子应用的半导体材料P型氮化镓（p-GaN）形成低电阻欧姆电接触方面遇到限制，使得接触对器件的发光是高度透明的。碳纳米管（CNT）由于其组合的金属和半导体特性以及CNT的织物具有高的光学透明度的事实，可以解决这个问题。接触方案的物理结构分为三个部分：a）GaN，b）界面材料和c）金属导体。界面材料的作用是使GaN和金属两者适当地接触，这样GaN又将与将器件与外部电路接口的金属导体进行良好的电接触。提供了一种使用CNT和金属制造与GaN接触的方法，同时保持了GaN表面的保护。

4. 发明授权

US07563711B1 Method of forming a carbon nanotube-based contact to semiconductor 有权
标题翻译：形成与半导体的碳纳米管基接触的方法
公开(公告)号：US07563711B1
公开(公告)日：2009-07-21
申请号：US11708929
申请日：2007-02-21
申请人： Jonathan W. Ward , Benjamin Schlatka , Mitchell Meinhold , Robert F. Smith , Brent M. Segal
发明人： Jonathan W. Ward , Benjamin Schlatka , Mitchell Meinhold , Robert F. Smith , Brent M. Segal
IPC分类号： H01L21/44
CPC分类号： H01L33/40 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/417 , H01L29/452 , H01L33/32 , Y10S438/924 , Y10T428/30 , Y10T428/31678
摘要： Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.
摘要翻译：制造商在与通常用于光子应用的半导体材料P型氮化镓（p-GaN）形成低电阻欧姆电接触方面遇到限制，使得接触对器件的发光是高度透明的。碳纳米管（CNT）由于其组合的金属和半导体特性以及CNT的织物具有高的光学透明度的事实，可以解决这个问题。接触方案的物理结构分为三个部分：a）GaN，b）界面材料和c）金属导体。界面材料的作用是使GaN和金属两者适当地接触，这样GaN又将与将器件与外部电路接口的金属导体进行良好的电接触。提供了一种使用CNT和金属制造与GaN接触的方法，同时保持了GaN表面的保护。

5. 发明授权

US08471238B2 Light emitters using nanotubes and methods of making same 有权
标题翻译：使用纳米管的发光体及其制作方法
公开(公告)号：US08471238B2
公开(公告)日：2013-06-25
申请号：US11227468
申请日：2005-09-15
申请人： Jonathan W. Ward , Mitchell Meinhold , Claude L. Bertin , Benjamin Schlatka , Brent M. Segal , Thomas Ruckes
发明人： Jonathan W. Ward , Mitchell Meinhold , Claude L. Bertin , Benjamin Schlatka , Brent M. Segal , Thomas Ruckes
IPC分类号： H01L29/06
CPC分类号： H01K1/04 , B82Y10/00 , B82Y20/00 , H01L51/0048 , H01L51/0052
摘要： Light emitters using nanotubes and methods of making same. A light emitter includes a nanotube article in electrical communication with a first and a second contact, a substrate having a predefined region with a relatively low thermal conductivity said region in predefined physical relation to said nanotube article; and a stimulus circuit in electrical communication with the first and second contacts. The stimulus circuit provides electrical stimulation sufficient to induce light emission from the nanotube article in the proximity of the predefined region. The predefined region is a channel formed in the substrate or a region of material with relatively low thermal conductivity. The light emitter can be integrated with semiconductor circuits including CMOS circuits. The light emitter can be integrated into optical driver circuits (on- and off-chip drivers) and opto-isolators.
摘要翻译：使用纳米管的发光体及其制作方法。光发射器包括与第一和第二接触电连通的纳米管制品，具有预定区域的基底，所述预定区域具有相对于所述纳米管制品预定的物理关系的相对低导热性的所述区域; 以及与第一和第二触点电连通的激励电路。刺激电路提供足以在预定区域附近从纳米管制品引发光发射的电刺激。预定区域是形成在衬底中的通道或具有相对较低热导率的材料区域。光发射器可以与包括CMOS电路的半导体电路集成。光发射器可以集成到光驱动器电路（片上和片外驱动器）和光隔离器中。

6. 发明申请

US20080036356A1 Light emitters using nanotubes and methods of making same 有权
标题翻译：使用纳米管的发光体及其制作方法
公开(公告)号：US20080036356A1
公开(公告)日：2008-02-14
申请号：US11227468
申请日：2005-09-15
申请人： Jonathan W. Ward , Mitchell Meinhold , Claude L. Bertin , Benjamin Schlatka , Brent M. Segal , Thomas Ruckes
发明人： Jonathan W. Ward , Mitchell Meinhold , Claude L. Bertin , Benjamin Schlatka , Brent M. Segal , Thomas Ruckes
IPC分类号： H01K1/02
CPC分类号： H01K1/04 , B82Y10/00 , B82Y20/00 , H01L51/0048 , H01L51/0052
摘要： Light emitters using nanotubes and methods of making same. A light emitter includes a nanotube article in electrical communication with a first and a second contact, a substrate having a predefined region with a relatively low thermal conductivity said region in predefined physical relation to said nanotube article; and a stimulus circuit in electrical communication with the first and second contacts. The stimulus circuit provides electrical stimulation sufficient to induce light emission from the nanotube article in the proximity of the predefined region. The predefined region is a channel formed in the substrate or a region of material with relatively low thermal conductivity. The light emitter can be integrated with semiconductor circuits including CMOS circuits. The light emitter can be integrated into optical driver circuits (on- and off-chip drivers) and opto-isolators.
摘要翻译：使用纳米管的发光体及其制作方法。光发射器包括与第一和第二接触电连通的纳米管制品，具有预定区域的基底，所述预定区域具有相对于所述纳米管制品预定的物理关系的相对低导热性的所述区域; 以及与第一和第二触点电连通的激励电路。刺激电路提供足以在预定区域附近从纳米管制品引发光发射的电刺激。预定区域是形成在衬底中的通道或具有相对较低热导率的材料区域。光发射器可以与包括CMOS电路的半导体电路集成。光发射器可以集成到光驱动器电路（片上和片外驱动器）和光隔离器中。

7. 发明授权

US08937575B2 Microstrip antenna elements and arrays comprising a shaped nanotube fabric layer and integrated two terminal nanotube select devices 有权
标题翻译：微带天线元件和阵列包括成形纳米管织物层和集成的两个末端纳米管选择装置
公开(公告)号：US08937575B2
公开(公告)日：2015-01-20
申请号：US12533687
申请日：2009-07-31
申请人： Jonathan W. Ward , Robert F. Smith , Brent M. Segal
发明人： Jonathan W. Ward , Robert F. Smith , Brent M. Segal
IPC分类号： H01Q1/38 , H01Q21/08 , H01Q9/04
CPC分类号： H01Q9/0407 , H01Q21/08
摘要： A nanotube based microstrip antenna element is provided along with arrays of same. The nanotube based microstrip antenna element comprises a dielectric substrate layer sandwiched between a ground plane layer and a conductive nanotube layer, the conductive nanotube layer shaped to form a radiating structure. In more advanced embodiments, the nanotube based microstrip antenna element further includes an integrated two terminal nanotube switch device such as to provide a selectability function to such microstrip antenna elements and reconfigurable arrays of same. Anisotropic nanotube fabric layers are also used to provide substantially transparent microstrip antenna structures which can be deposited over display screens and the like.
摘要翻译：基于纳米管的微带天线元件与其阵列一起提供。纳米管微带天线元件包括夹在接地平面层和导电纳米管层之间的电介质基底层，形成为形成辐射结构的导电纳米管层。在更先进的实施例中，基于纳米管的微带天线元件还包括集成的二端子纳米管开关器件，以便为这种微带天线元件和可重构阵列提供可选择性功能。各向异性纳米管织物层也用于提供基本上透明的微带天线结构，其可以沉积在显示屏等上。

8. 发明授权

US08400053B2 Carbon nanotube films, layers, fabrics, ribbons, elements and articles 有权
标题翻译：碳纳米管膜，层，织物，丝带，元件和制品
公开(公告)号：US08400053B2
公开(公告)日：2013-03-19
申请号：US12136624
申请日：2008-06-10
申请人： Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01J63/04
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. To make a nanofabric, a substrate is provided. Preformed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes wherein the non-woven fabric is substantially uniform density. The nanofabrics and articles have characteristics desirable for various electrical systems such as memory circuits and conductive traces and pads.
摘要翻译：公开了碳纳米管薄膜，层，织物，丝带，元件和制品。为了制造各种制品，某些实施方案提供了基材。将预制的纳米管施加到基底的表面以产生碳纳米管的无纺织物。根据限定的图案选择性地去除无纺织物的部分以产生制品。为了制造纳米纤维，提供了基材。将预制的纳米管施加到基底的表面以产生碳纳米管的无纺织物，其中无纺织物具有基本均匀的密度。纳米材料和制品具有对各种电气系统（诸如存储电路和导电迹线和焊盘）所期望的特性。

9. 发明授权

US08115187B2 Triodes using nanofabric articles and methods of making the same 失效
标题翻译：使用纳米制品的三极管和制造相同的方法
公开(公告)号：US08115187B2
公开(公告)日：2012-02-14
申请号：US12124475
申请日：2008-05-21
申请人： Brent M. Segal , Jonathan W. Ward , Thomas Rueckes
发明人： Brent M. Segal , Jonathan W. Ward , Thomas Rueckes
IPC分类号： H01L29/02
CPC分类号： H01J21/10 , H01J3/021 , H01J19/38 , H01J2203/0232 , Y10S977/742
摘要： Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.
摘要翻译：提供具有碳纳米管膜，层，带和织物的真空微电子器件。本发明公开了包括三端（发射极，栅极和阳极）的三极管结构的微电子真空装置，以及诸如四极和五极管的高阶器件，所有这些都使用碳纳米管来形成设备。在某些实施例中，纳米管织物的图案化部分可以用作栅极/栅极部件，导电迹线等。纳米管织物可以悬挂或保形地设置。在某些实施例中，使用用于加强纳米管织物层的方法。公开了用于施加，选择性地去除（例如蚀刻）悬浮和加强垂直和水平布置的纳米管织物的各种方法，以及CMOS兼容的制造方法。在某些实施例中，纳米管织物三极管提供可用于辐射密集型应用中的高速，小规模，低功率的器件。

10. 发明申请

US20110083319A1 METHODS OF MAKING NANOTUBE SWITCHES 有权
标题翻译：制备纳米管开关的方法
公开(公告)号：US20110083319A1
公开(公告)日：2011-04-14
申请号：US12953076
申请日：2010-11-23
申请人： Claude L. Bertin , Brent M. Segal , Thomas Rueckes , Jonathan W. Ward
发明人： Claude L. Bertin , Brent M. Segal , Thomas Rueckes , Jonathan W. Ward
IPC分类号： H01H11/00 , B82Y40/00
CPC分类号： H01L23/62 , B82Y10/00 , G11C13/025 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01L23/60 , H01L27/0248 , H01L27/0251 , H01L51/0048 , H01L2224/16 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/19103 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H05K1/0259 , Y10T29/49105 , Y10T29/49117 , Y10T29/49124 , Y10T29/49204
摘要： Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment. The ESD circuit may be repeatedly programmed between the activated and deactivated states so as to repeatedly activate and deactivate ESD protection of the protected circuit. The nanotube switch provides protection based on the magnitude of the signal on the input pad.
摘要翻译：纳米管ESD保护装置和相应的非易失性和挥发性纳米管开关。用于保护受保护电路的静电放电（ESD）保护电路耦合到输入焊盘。 ESD电路包括电子控制的纳米管开关。开关耦合到保护电路和放电路径。纳米管开关可以响应于控制的电刺激而被控制在去激活状态和激活状态之间。激活状态产生电流路径，使得输入焊盘上的信号流到放电路径，使输入焊盘处的信号保持在受保护电路的预定可操作范围内。纳米管开关，输入焊盘和受保护电路可以在半导体芯片上。纳米管开关可以在芯片载体上。根据实施例，去激活状态和激活状态可以是易失性的或非易失性的。可以在激活和去激活状态之间重复地编程ESD电路，以便重复激活和去激活受保护电路的ESD保护。纳米管开关基于输入焊盘上的信号幅度提供保护。

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