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    • 6. 发明授权
    • Random access memory including nanotube switching elements
    • 随机存取存储器包括纳米管开关元件
    • US07245520B2
    • 2007-07-17
    • US11231213
    • 2005-09-20
    • Claude L. BertinThomas RuckesBrent M. Segal
    • Claude L. BertinThomas RuckesBrent M. Segal
    • G11C11/00G11C11/50G11C7/10B82B1/00
    • G11C13/025B82Y10/00G11C14/00G11C23/00Y10S977/732Y10S977/733Y10S977/936Y10S977/938Y10S977/943
    • A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a nanotube channel element having at least one electrically conductive nanotube, and a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between a channel electrode and an output node. Input nodes of the first and second inverters are coupled to the set electrodes and the output nodes of the first and second nanotube switching elements. The cell can operate as a normal electronic memory, or in a shadow memory or store mode to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode to transfer the state of the nanotube switching elements to the electronic memory.
    • 随机存取存储单元包括第一和第二纳米管切换元件以及具有交叉耦合的第一和第二反相器的电子存储器。 每个纳米管开关元件包括具有至少一个导电纳米管的纳米管通道元件,以及相对于纳米管通道元件设置的设定电极和释放电极,以可控制地形成和取消通道电极与输出节点之间的导电通道 。 第一和第二反相器的输入节点耦合到第一和第二纳米管切换元件的设定电极和输出节点。 电池可以作为正常的电子存储器,或者在阴影存储器或存储模式下操作,以将电子存储器状态传送到纳米管开关元件。 该装置可以稍后在召回模式下操作以将纳米管开关元件的状态转移到电子存储器。
    • 10. 发明申请
    • RANDOM ACCESS MEMORY INCLUDING NANOTUBE SWITCHING ELEMENTS
    • 随机存取存储器,包括纳米管开关元件
    • US20070127285A1
    • 2007-06-07
    • US11231213
    • 2005-09-20
    • Claude BertinThomas RuckesBrent Segal
    • Claude BertinThomas RuckesBrent Segal
    • G11C11/00
    • G11C13/025B82Y10/00G11C14/00G11C23/00Y10S977/732Y10S977/733Y10S977/936Y10S977/938Y10S977/943
    • Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control structure having a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said channel electrode and said output node. The electronic memory has cross-coupled first and second inverters. The input node of the first inverter is coupled to the set electrode of the first nanotube switching element and to the output node of the second nanotube switching element. The input node of the of the second inverter is coupled to the set electrode of the second nanotube switching element and to the output node of the first nanotube switching element; and the channel electrode is coupled to a channel voltage line. The release electrode of the first nanotube switching element is coupled to the release electrode of the second nanotube switching element and wherein both release electrodes are coupled to a release line. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.
    • 随机存取存储器包括纳米管开关元件。 存储单元包括第一和第二纳米管切换元件和电子存储器。 每个纳米管开关元件包括输出节点,具有至少一个导电纳米管的纳米管通道元件和具有相对于纳米管通道元件设置的设定电极和释放电极的控制结构,以可控地形成和取消导电通道 在所述通道电极和所述输出节点之间。 电子存储器具有交叉耦合的第一和第二逆变器。 第一反相器的输入节点耦合到第一纳米管开关元件的设定电极和第二纳米管开关元件的输出节点。 第二反相器的输入节点耦合到第二纳米管开关元件的设定电极和第一纳米管开关元件的输出节点; 并且沟道电极耦合到沟道电压线。 第一纳米管开关元件的释放电极耦合到第二纳米管开关元件的释放电极,并且其中两个释放电极耦合到释放线。 电池可以作为普通电子存储器工作,或者可以在阴影存储器或存储模式(例如,当电力中断时)操作以将电子存储器状态传送到纳米管开关元件。 该装置可以稍后在调谐模式下操作,其中纳米管切换元件的状态可以被传送到电子存储器。