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1. 发明授权

US09978565B2 Systems for cooling RF heated chamber components 有权
公开(公告)号：US09978565B2
公开(公告)日：2018-05-22
申请号：US13292649
申请日：2011-11-09
申请人： Jon McChesney , Saravanapriyan Sriraman , Ricky Marsh , Alex Paterson , John Holland
发明人： Jon McChesney , Saravanapriyan Sriraman , Ricky Marsh , Alex Paterson , John Holland
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32522 , H01J37/32082 , H01J37/32119 , H01J37/32238
摘要： In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

2. 发明申请

US20130087283A1 Systems For Cooling RF Heated Chamber Components 有权
标题翻译： RF加热室部件冷却系统
公开(公告)号：US20130087283A1
公开(公告)日：2013-04-11
申请号：US13292649
申请日：2011-11-09
申请人： Jon McChesney , Saravanapriyan Sriraman , Ricky Marsh , Alex Paterson , John Holland
发明人： Jon McChesney , Saravanapriyan Sriraman , Ricky Marsh , Alex Paterson , John Holland
IPC分类号： H01L21/3065
CPC分类号： H01J37/32522 , H01J37/32082 , H01J37/32119 , H01J37/32238
摘要： In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.
摘要翻译：在一个实施例中，等离子体处理装置可以包括电介质窗，真空室，能量源和至少一个空气放大器。电介质窗口可以包括等离子体暴露表面和空气暴露表面。电介质窗口的真空室和等离子体暴露表面可以配合以包围等离子体处理气体。能量源可以通过电介质窗口传输电磁能并在电介质窗口中形成升高的温度区域。至少一个空气放大器可以与电介质窗口流体连通。至少一个空气放大器可以在至少约1in-H 2 O的背压下操作，并且可以提供至少约30cfm的空气。

3. 发明授权

US06727655B2 Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber 失效
标题翻译：监测半导体处理室中工件的电状态的方法和装置
公开(公告)号：US06727655B2
公开(公告)日：2004-04-27
申请号：US10055437
申请日：2001-10-26
申请人： Jon McChesney , Alex Paterson , Valentin N. Todorow , John Holland , Michael Barnes
发明人： Jon McChesney , Alex Paterson , Valentin N. Todorow , John Holland , Michael Barnes
IPC分类号： H01J724
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/32935 , H01L21/67069
摘要： A method and apparatus is disclosed to monitor and/or control the electrical states at a workpiece disposed in a plasma chamber that is in electrical communication with an RF signal source over a defined signal path. The method includes ascertaining an impedance of the signal path, sensing electrical characteristics of the RF power at the RF signal source and obtaining values of the electrical states at the workpiece. To provide a more accurate model of the electrical states at the workpiece, the modeling includes information concerning the impedance introduced by the signal path. This technique may be employed to provide feedback control of the RF generator, so that the electrical states may be dynamically adjusted be within predefined, or desired, parameters.
摘要翻译：公开了一种监测和/或控制设置在等离子体室中的工件上的电状态的方法和装置，该等离子体腔室通过限定的信号路径与RF信号源电连通。该方法包括确定信号路径的阻抗，感测RF信号源处的RF功率的电特性并获得工件处的电状态的值。为了提供工件上电状态的更准确的模型，建模包括有关由信号路径引入的阻抗的信息。可以采用这种技术来提供RF发生器的反馈控制，使得电状态可以在预定义或期望的参数内被动态调整。

4. 发明申请

US20130244440A1 CHAMBER FILLER KIT FOR PLASMA ETCH CHAMBER USEFUL FOR FAST GAS SWITCHING 有权
标题翻译：用于快速气体切换的等离子体气室的室内填充试剂盒
公开(公告)号：US20130244440A1
公开(公告)日：2013-09-19
申请号：US13421188
申请日：2012-03-15
申请人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
发明人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
IPC分类号： H01L21/3065
CPC分类号： H01J37/32477 , C23C16/4404 , H01J37/321 , H01J37/32458 , H01L21/30655
摘要： A chamber filler kit for an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate. The chamber filler kit can be used to modify a standard chamber to accommodate different processing regimes such as rapid alternating processes wherein wide pressure changes are needed without varying a gap between the substrate and the window.
摘要翻译：一种用于电感耦合等离子体处理室的腔室填充器套件，其中通过将RF能量通过面向支撑在悬臂卡盘上的衬底的窗口感应耦合来处理半导体衬底。该套件包括至少一个室填充物，其减小了在卡盘下方的腔室中的下室体积。套件的填充物可以安装在具有超过60升的室容积的标准室中，并且通过使用不同尺寸的室填料，可以减小室体积以提供期望的气体流动传导并适应处理过程中真空压力的变化底物。腔室填充套件可用于修改标准室以适应不同的处理方式，例如需要宽压力变化的快速交替过程，而不改变衬底和窗口之间的间隙。

5. 发明授权

US09679751B2 Chamber filler kit for plasma etch chamber useful for fast gas switching 有权
公开(公告)号：US09679751B2
公开(公告)日：2017-06-13
申请号：US13421188
申请日：2012-03-15
申请人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
发明人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
IPC分类号： C23C16/44 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32477 , C23C16/4404 , H01J37/321 , H01J37/32458 , H01L21/30655
摘要： A chamber filler kit for an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate. The chamber filler kit can be used to modify a standard chamber to accommodate different processing regimes such as rapid alternating processes wherein wide pressure changes are needed without varying a gap between the substrate and the window.

6. 发明申请

US20130228283A1 Temperature Control in RF Chamber with Heater and Air Amplifier 有权
标题翻译：加热器和空气放大器RF室中的温度控制
公开(公告)号：US20130228283A1
公开(公告)日：2013-09-05
申请号：US13851793
申请日：2013-03-27
申请人： Jon McChesney , Alex Paterson
发明人： Jon McChesney , Alex Paterson
IPC分类号： H01L21/3065
CPC分类号： H01J37/32522 , H01J37/32082 , H01J37/3211 , H01J37/32119 , H01J37/32238 , H01J2237/002 , H01J2237/334 , H01L21/3065
摘要： Systems, methods, and computer programs are presented for controlling the temperature of a window in a semiconductor manufacturing chamber. One apparatus includes an air amplifier, a plenum, a heater, a temperature sensor, and a controller. The air amplifier is coupled to pressurized gas and generates, when activated, a flow of air. The air amplifier is also coupled to the plenum and the heater. The plenum receives the flow of air and distributes the flow of air over a window of the plasma chamber. When the heater is activated, the flow of air is heated during processing, and when the heater is not activated, the flow of air cools the window. The temperature sensor is situated about the window of the plasma chamber, and the controller is defined to activate both the air amplifier and the heater based on a temperature measured by the temperature sensor.
摘要翻译：提出了用于控制半导体制造室中的窗口的温度的系统，方法和计算机程序。一种装置包括空气放大器，增压室，加热器，温度传感器和控制器。空气放大器耦合到加压气体，并在被激活时产生空气流。空气放大器还连接到增压室和加热器。充气室接收空气流并将空气流分配在等离子体室的窗口上。当加热器被激活时，在加工期间空气的流动被加热，并且当加热器未被激活时，空气的流动冷却窗口。温度传感器位于等离子体室的窗口周围，并且控制器被定义为基于由温度传感器测量的温度来激活空气放大器和加热器。

7. 发明申请

US20130135058A1 TCCT MATCH CIRCUIT FOR PLASMA ETCH CHAMBERS 有权
公开(公告)号：US20130135058A1
公开(公告)日：2013-05-30
申请号：US13751001
申请日：2013-01-25
申请人： Maolin Long , Ricky Marsh , Alex Paterson
发明人： Maolin Long , Ricky Marsh , Alex Paterson
IPC分类号： H03H7/38
CPC分类号： H03H7/38 , H03H7/40
摘要： A match circuit includes the following: a power input circuit coupled to an RF source; an inner coil input circuit coupled between the power input circuit and an input terminal of an inner coil, the inner coil input circuit including an inductor and a capacitor coupled in series to the inductor, the inductor connecting to the power input circuit, and the capacitor connecting to the input terminal of the inner coil, a first node being defined between the power input circuit and the inner coil input circuit; an inner coil output circuit coupled between an output terminal of the inner coil and ground, the inner coil output circuit defining a direct pass-through connection to ground; an outer coil input circuit coupled between the first node and an input terminal of an outer coil; and an outer coil output circuit coupled between an output terminal of the outer coil and ground.

8. 发明授权

US09293353B2 Faraday shield having plasma density decoupling structure between TCP coil zones 有权
标题翻译：法拉第屏蔽层具有TCP线圈区域之间的等离子体密度去耦结构
公开(公告)号：US09293353B2
公开(公告)日：2016-03-22
申请号：US13658652
申请日：2012-10-23
申请人： Maolin Long , Alex Paterson , Ricky Marsh , Ying Wu , John Drewery
发明人： Maolin Long , Alex Paterson , Ricky Marsh , Ying Wu , John Drewery
IPC分类号： C23C16/00 , H01L21/306 , H01L21/67 , H05K9/00 , H01J37/32
CPC分类号： H01L21/67069 , H01J37/32651 , H05K9/00
摘要： A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for receiving a substrate, a dielectric window connected to a top portion of the chamber, the dielectric window disposed over the electrostatic chuck, and a Faraday shield. The Faraday shield is disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range that includes a first and second plurality of slots and an outer zone having an outer radius range that includes a third plurality of slots. The inner zone is adjacent to the outer zone. The Faraday shield also includes a band ring separating the inner zone and the outer zone, such that the first and second plurality of slots do not connect with the third plurality of slots.
摘要翻译：提供了法拉第屏蔽和包含法拉第屏蔽的等离子体处理室。等离子体室包括用于接收基板的静电卡盘，连接到腔室的顶部的介电窗口，设置在静电卡盘上的电介质窗口和法拉第屏蔽件。法拉第屏蔽设置在室内并限定在静电卡盘和电介质窗口之间。法拉第屏蔽包括具有包括第一和第二多个狭槽的内半径范围的内区和具有包括第三多个槽的外半径范围的外区。内部区域与外部区域相邻。法拉第屏蔽还包括分隔内区和外区的带环，使得第一和第二多个槽不与第三多个槽连接。

9. 发明申请

US20130186568A1 Faraday Shield Having Plasma Density Decoupling Structure Between TCP Coil Zones 有权
标题翻译：法拉第屏蔽层在TCP线圈区域之间具有等离子体密度去耦结构
公开(公告)号：US20130186568A1
公开(公告)日：2013-07-25
申请号：US13658652
申请日：2012-10-23
申请人： Maolin Long , Alex Paterson , Ricky Marsh , Ying Wu , John Drewery
发明人： Maolin Long , Alex Paterson , Ricky Marsh , Ying Wu , John Drewery
IPC分类号： H01L21/67 , H05K9/00
CPC分类号： H01L21/67069 , H01J37/32651 , H05K9/00
摘要： A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for receiving a substrate, a dielectric window connected to a top portion of the chamber, the dielectric window disposed over the electrostatic chuck, and a Faraday shield. The Faraday shield is disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range that includes a first and second plurality of slots and an outer zone having an outer radius range that includes a third plurality of slots. The inner zone is adjacent to the outer zone. The Faraday shield also includes a band ring separating the inner zone and the outer zone, such that the first and second plurality of slots do not connect with the third plurality of slots.
摘要翻译：提供了法拉第屏蔽和包含法拉第屏蔽的等离子体处理室。等离子体室包括用于接收基板的静电卡盘，连接到腔室的顶部的介电窗口，设置在静电卡盘上的电介质窗口和法拉第屏蔽件。法拉第屏蔽设置在室内并限定在静电卡盘和电介质窗口之间。法拉第屏蔽包括具有包括第一和第二多个狭槽的内半径范围的内区和具有包括第三多个槽的外半径范围的外区。内部区域与外部区域相邻。法拉第屏蔽还包括分隔内区和外区的带环，使得第一和第二多个槽不与第三多个槽连接。

10. 发明申请

US20130256271A1 METHODS AND APPARATUSES FOR CONTROLLING PLASMA IN A PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于控制等离子体处理室中的等离子体的方法和装置
公开(公告)号：US20130256271A1
公开(公告)日：2013-10-03
申请号：US13438824
申请日：2012-04-03
申请人： Theodoros Panagopoulos , John Holland , Alex Paterson
发明人： Theodoros Panagopoulos , John Holland , Alex Paterson
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/3211
摘要： Methods and apparatus for controlling plasma in a plasma processing system having at least an inductively coupled plasma (ICP) processing chamber are disclosed. The ICP chamber employs at least a first/center RF coil, a second/edge RF coil disposed concentrically with respect to the first/center RF coil, and a RF coil set having at least a third/mid RF coil disposed concentrically with respect to the first/center RF coil and the second/edge RF coil in a manner such that the third/mid RF coil is disposed in between the first/center RF coil and the second/edge RF coil. During processing, RF currents in the same direction are provided to the first/center RF coil and the second/edge RF coil while RF current in the reverse direction (relative to the direction of the currents provided to the first/center RF coil and the second/edge RF coil) is provided to the third/mid RF coil.
摘要翻译：公开了具有至少电感耦合等离子体（ICP）处理室的等离子体处理系统中用于控制等离子体的方法和装置。 ICP室采用至少第一/中心RF线圈，相对于第一/中心RF线圈同心设置的第二/边缘RF线圈，以及RF线圈组，其具有至少相对于第一/中心RF线圈和第二/边缘RF线圈，使得第三/中频RF线圈设置在第一/中心RF线圈和第二/边缘RF线圈之间。在处理期间，在相同方向上的RF电流被提供给第一/中心RF线圈和第二/边缘RF线圈，而RF电流在相反方向（相对于提供给第一/中心RF线圈的电流的方向和第二/边缘RF线圈）提供给第三/中频RF线圈。

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