专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09679751B2 Chamber filler kit for plasma etch chamber useful for fast gas switching 有权
公开(公告)号：US09679751B2
公开(公告)日：2017-06-13
申请号：US13421188
申请日：2012-03-15
申请人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
发明人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
IPC分类号： C23C16/44 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32477 , C23C16/4404 , H01J37/321 , H01J37/32458 , H01L21/30655
摘要： A chamber filler kit for an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate. The chamber filler kit can be used to modify a standard chamber to accommodate different processing regimes such as rapid alternating processes wherein wide pressure changes are needed without varying a gap between the substrate and the window.

2. 发明申请

US20130244440A1 CHAMBER FILLER KIT FOR PLASMA ETCH CHAMBER USEFUL FOR FAST GAS SWITCHING 有权
标题翻译：用于快速气体切换的等离子体气室的室内填充试剂盒
公开(公告)号：US20130244440A1
公开(公告)日：2013-09-19
申请号：US13421188
申请日：2012-03-15
申请人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
发明人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
IPC分类号： H01L21/3065
CPC分类号： H01J37/32477 , C23C16/4404 , H01J37/321 , H01J37/32458 , H01L21/30655
摘要： A chamber filler kit for an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate. The chamber filler kit can be used to modify a standard chamber to accommodate different processing regimes such as rapid alternating processes wherein wide pressure changes are needed without varying a gap between the substrate and the window.
摘要翻译：一种用于电感耦合等离子体处理室的腔室填充器套件，其中通过将RF能量通过面向支撑在悬臂卡盘上的衬底的窗口感应耦合来处理半导体衬底。该套件包括至少一个室填充物，其减小了在卡盘下方的腔室中的下室体积。套件的填充物可以安装在具有超过60升的室容积的标准室中，并且通过使用不同尺寸的室填料，可以减小室体积以提供期望的气体流动传导并适应处理过程中真空压力的变化底物。腔室填充套件可用于修改标准室以适应不同的处理方式，例如需要宽压力变化的快速交替过程，而不改变衬底和窗口之间的间隙。

3. 发明授权

US08133349B1 Rapid and uniform gas switching for a plasma etch process 有权
标题翻译：快速均匀的气体切换用于等离子体蚀刻工艺
公开(公告)号：US08133349B1
公开(公告)日：2012-03-13
申请号：US12938918
申请日：2010-11-03
申请人： Theo Panagopoulos
发明人： Theo Panagopoulos
IPC分类号： H01L21/306 , H01L21/3065 , C23C16/00 , C23C16/505 , C23C16/455
CPC分类号： H01L21/30655 , C23C16/045 , H01J37/321 , H01J37/32449
摘要： An inductively coupled plasma processing apparatus includes a processing chamber in which a semiconductor substrate is processed, a substrate support, a dielectric window forming a wall of the chamber, an antenna operable to generate and maintain a plasma in the processing chamber, and a showerhead plate of dielectric material adjacent the dielectric window. The showerhead plate includes gas holes in fluid communication with a plenum below the dielectric window, the plenum having a gas volume of no greater than 500 cm3. The gas holes extend between the plenum and a plasma exposed surface of the showerhead plate and the gas holes have an aspect ratio of at least 2. A gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber through the showerhead plate while the semiconductor substrate is supported on the substrate support. The plasma processing apparatus can rapidly replace the etching gas in the plenum with the deposition gas within about 200 milliseconds and vice versa. The plasma processing apparatus is operable to etch silicon on the semiconductor substrate at a rate of 10 μm/minute or higher.
摘要翻译：电感耦合等离子体处理装置包括处理半导体衬底的处理室，衬底支撑体，形成腔壁的电介质窗口，可操作以在处理室中产生和维持等离子体的天线，以及喷头板的电介质材料。喷头板包括与电介质窗口下方的压力室流体连通的气孔，气室具有不大于500cm 3的气体体积。所述气孔在所述增压室和所述喷淋头板的等离子体暴露表面之间延伸，并且所述气孔具有至少为2的纵横比。气体输送系统可操作以通过所述气体供应系统将蚀刻气体和沉积气体供应到所述处理室中淋浴头板，同时半导体衬底被支撑在衬底支撑件上。等离子体处理装置可以快速地将沉积气体中的蚀刻气体替换在约200毫秒内，反之亦然。等离子体处理装置可操作以以10μm/分钟或更高的速率蚀刻半导体衬底上的硅。

4. 发明授权

US09011631B2 Rapid and uniform gas switching for a plasma etch process 有权
标题翻译：快速均匀的气体切换用于等离子体蚀刻工艺
公开(公告)号：US09011631B2
公开(公告)日：2015-04-21
申请号：US13364654
申请日：2012-02-02
申请人： Theo Panagopoulos
发明人： Theo Panagopoulos
IPC分类号： H01L21/311 , H01L21/3065 , C23C16/04 , H01J37/32
CPC分类号： H01L21/30655 , C23C16/045 , H01J37/321 , H01J37/32449
摘要： An inductively coupled plasma processing apparatus includes a processing chamber in which a semiconductor substrate is processed, a substrate support, a dielectric window forming a wall of the chamber, an antenna operable to generate and maintain a plasma in the processing chamber, and a showerhead plate of dielectric material adjacent the dielectric window. The showerhead plate includes gas holes in fluid communication with a plenum below the dielectric window, the plenum having a gas volume of no greater than 500 cm3. The gas holes extend between the plenum and a plasma exposed surface of the showerhead plate and the gas holes have an aspect ratio of at least 2. A gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber through the showerhead plate while the semiconductor substrate is supported on the substrate support.
摘要翻译：电感耦合等离子体处理装置包括处理半导体衬底的处理室，衬底支撑体，形成腔壁的电介质窗口，可操作以在处理室中产生和维持等离子体的天线，以及喷头板的电介质材料。喷头板包括与电介质窗口下方的压力室流体连通的气孔，气室具有不大于500cm 3的气体体积。所述气孔在所述增压室和所述喷淋头板的等离子体暴露表面之间延伸，并且所述气孔具有至少为2的纵横比。气体输送系统可操作以通过所述气体供应系统将蚀刻气体和沉积气体供应到所述处理室中淋浴头板，同时半导体衬底被支撑在衬底支撑件上。

5. 发明申请

US20120156880A1 RAPID AND UNIFORM GAS SWITCHING FOR A PLASMA ETCH PROCESS 审中-公开
标题翻译：用于等离子体蚀刻过程的快速和均匀的气体切换
公开(公告)号：US20120156880A1
公开(公告)日：2012-06-21
申请号：US13364654
申请日：2012-02-02
申请人： Theo Panagopoulos
发明人： Theo Panagopoulos
IPC分类号： H01L21/311 , H01L21/3065
CPC分类号： H01L21/30655 , C23C16/045 , H01J37/321 , H01J37/32449
摘要： An inductively coupled plasma processing apparatus includes a processing chamber in which a semiconductor substrate is processed, a substrate support, a dielectric window forming a wall of the chamber, an antenna operable to generate and maintain a plasma in the processing chamber, and a showerhead plate of dielectric material adjacent the dielectric window. The showerhead plate includes gas holes in fluid communication with a plenum below the dielectric window, the plenum having a gas volume of no greater than 500 cm3. The gas holes extend between the plenum and a plasma exposed surface of the showerhead plate and the gas holes have an aspect ratio of at least 2. A gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber through the showerhead plate while the semiconductor substrate is supported on the substrate support.
摘要翻译：电感耦合等离子体处理装置包括处理半导体衬底的处理室，衬底支撑体，形成腔壁的电介质窗口，可操作以在处理室中产生和维持等离子体的天线，以及喷头板的电介质材料。喷头板包括与电介质窗口下方的压力室流体连通的气孔，气室具有不大于500cm 3的气体体积。所述气孔在所述增压室和所述喷淋头板的等离子体暴露表面之间延伸，并且所述气孔具有至少为2的纵横比。气体输送系统可操作以通过所述气体供应系统将蚀刻气体和沉积气体供应到所述处理室中淋浴头板，同时半导体衬底被支撑在衬底支撑件上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式