专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06429117B1 Method to create copper traps by modifying treatment on the dielectrics surface 有权
标题翻译：通过修改电介质表面处理来产生铜阱的方法
公开(公告)号：US06429117B1
公开(公告)日：2002-08-06
申请号：US09619018
申请日：2000-07-19
申请人： John Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： John Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L214763
CPC分类号： H01L21/76831 , H01L21/3105 , H01L21/31633 , H01L21/31695 , H01L21/76807 , H01L21/76814 , H01L21/76826 , Y10S438/958
摘要： A method of preventing metal penetration and diffusion from metal structures formed over a semiconductor structure, comprising the following steps. A semiconductor structure including a patterned dielectric layer is provided. The patterned dielectric layer includes an opening and an upper surface. The dielectric layer surface is then passivated to form a passivation layer. A metal plug is formed within the dielectric layer opening. The passivation layer prevents penetration and diffusion of metal out from the metal plug into the semiconductor structure and the patterned dielectric layer.
摘要翻译：一种防止在半导体结构上形成的金属结构的金属渗透和扩散的方法，包括以下步骤。提供包括图案化介电层的半导体结构。图案化电介质层包括开口和上表面。然后将介电层表面钝化以形成钝化层。在电介质层开口内形成金属塞。钝化层防止金属从金属插塞渗入并扩散到半导体结构和图案化的介电层中。

2. 发明授权

US06475810B1 Method of manufacturing embedded organic stop layer for dual damascene patterning 失效
标题翻译：用于双镶嵌图案的嵌入式有机停止层的制造方法
公开(公告)号：US06475810B1
公开(公告)日：2002-11-05
申请号：US09636579
申请日：2000-08-10
申请人： Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu , Simon Chooi , Yakub Aliyu
发明人： Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu , Simon Chooi , Yakub Aliyu
IPC分类号： H01L2158
CPC分类号： H01L21/76834 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76832
摘要： A new method of forming a dual damascene interconnect structure, wherein damage of interconnect and contamination of dielectrics during etching is minimized by having an embedded organic stop layer over the lower interconnect and later etching the organic stop layer with an H2 containing plasma, or hydrogen radical.
摘要翻译：形成双镶嵌互连结构的新方法，其中在蚀刻期间互连和电介质污染的损害最小化，在下互连上具有嵌入的有机阻挡层，并且随后用含H2的等离子体或氢自由基蚀刻有机阻挡层。

3. 发明授权

US06720204B2 Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding 有权
标题翻译：在Cu / Cu或Cu /金属接合期间使用氢等离子体预清洁铜表面的方法
公开(公告)号：US06720204B2
公开(公告)日：2004-04-13
申请号：US10120836
申请日：2002-04-11
申请人： John Leonard Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： John Leonard Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L24/05 , C23G5/00 , H01L21/02046 , H01L21/32136 , H01L23/4824 , H01L24/03 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05118 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05556 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4813 , H01L2224/4846 , H01L2224/48463 , H01L2224/4847 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/49111 , H01L2224/85013 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/05042 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/00014 , H01L2924/00 , H01L2224/48744 , H01L2924/00015
摘要： A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.
摘要翻译：一种将金属丝焊接到金属焊盘上的方法，包括以下步骤。提供一种在室内具有暴露的金属接合焊盘的半导体管芯结构。接合垫具有上表面。在等离子体源室内产生氢等离子体。用氢 - 等离子体对金属接合垫进行预清洁和钝化以去除在金属焊盘上表面上形成的任何金属氧化物。然后将线接合到钝化金属接合焊盘。

4. 发明授权

US06692579B2 Method for cleaning semiconductor structures using hydrocarbon and solvents in a repetitive vapor phase/liquid phase sequence 失效
标题翻译：在重复气相/液相序列中使用烃和溶剂清洗半导体结构的方法
公开(公告)号：US06692579B2
公开(公告)日：2004-02-17
申请号：US09764244
申请日：2001-01-19
申请人： Sudipto Ranendra Roy , Yi Xu , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Paul Kwok Keung Ho , Subhash Gupta
发明人： Sudipto Ranendra Roy , Yi Xu , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Paul Kwok Keung Ho , Subhash Gupta
IPC分类号： B08B300
CPC分类号： H01L21/02057 , B08B3/00 , C11D7/24 , C11D7/5027 , C11D11/0047 , H01L21/02063 , H01L21/6704
摘要： A method for cleaning a semiconductor structure using vapor phase condensation with a thermally vaporized cleaning agent, a hydrocarbon vaporized by pressure variation, or a combination of the two. In the thermally vaporized cleaning agent process, a semiconductor structure is lowered into a vapor blanket in a thermal gradient cleaning chamber at atmospheric pressure formed by heating a liquid cleaning agent below the vapor blanket and cooling the liquid cleaning agent above the vapor blanket causing it to condense and return to the bottom of the thermal gradient cleaning chamber. The semiconductor structure is then raised above the vapor blanket and the cleaning agent condenses on all of the surfaces of the semiconductor structure removing contaminants and is returned to the bottom of the chamber by gravity. In the pressurized hydrocarbon process, a semiconductor structure is placed into a variable pressure cleaning chamber, having a piston which changes the pressure by reducing or increasing the volume of the chamber. The semiconductor structure first exposed to the hydrocarbon in vapor phase, then the piston is lowered to condense the hydrocarbon. A semiconductor structure can be cleaned by either or both of these processes by repetitive vaporization/condensation cycles.
摘要翻译：一种使用与气相清洗剂进行气相冷凝的半导体结构，通过压力变化蒸发的烃或两者的组合来清洗半导体结构的方法。在热蒸发清洗剂方法中，半导体结构在大气压力的热梯度清洗室内被降低成蒸气层，所述热梯度清洗室通过将蒸气层下方的液体清洗剂加热而形成，并将该液体清洁剂冷却至蒸气层以上冷凝并返回到热梯度清洗室的底部。然后将半导体结构升高到蒸气层上方，并且清洁剂在半导体结构的所有表面上冷凝除去杂质，并通过重力返回到室的底部。在加压烃工艺中，将半导体结构放置在可变压力清洁室中，其具有通过减小或增加室的体积来改变压力的活塞。半导体结构首先暴露于气相中的烃，然后降低活塞以使烃冷凝。半导体结构可以通过这些过程中的任一个或两者通过重复的蒸发/冷凝循环进行清洁。

5. 发明授权

US06261955B1 Application of vapor phase HFACAC-based compound for use in copper decontamination and cleaning processes 失效
标题翻译：应用气相HFACAC基化合物用于铜去污和清洗过程
公开(公告)号：US06261955B1
公开(公告)日：2001-07-17
申请号：US09618262
申请日：2000-07-18
申请人： Yakub Aliyu , Simon Chooi , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： Yakub Aliyu , Simon Chooi , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L21/02046 , C23F1/12 , H01L21/02079 , Y10S438/906
摘要： An effective copper decontamination method in the fabrication of integrated circuits is achieved. An organic-based HFACAC decontamination compound in vapor phase is sprayed over elemental copper found on equipment or tools or as a spill wherein the compound reacts with all of the elemental copper and forms a volatile compound that can be flushed away thereby completing copper decontamination.
摘要翻译：实现了集成电路制造中有效的铜去污方法。蒸气相中的基于有机的HFACAC去污化合物喷洒在设备或工具上发现的元素铜上，或作为溢出物喷洒，其中化合物与所有元素铜反应并形成可被冲洗掉的挥发性化合物，从而完成铜去污。

6. 发明授权

US06683002B1 Method to create a copper diffusion deterrent interface 失效
公开(公告)号：US06683002B1
公开(公告)日：2004-01-27
申请号：US09636580
申请日：2000-08-10
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L21/76844 , H01L21/28556 , H01L21/31111 , H01L21/314 , H01L21/76807
摘要： Method and product for forming a dual damascene interconnect structure, wherein depositing a copper sulfide interface layer as sidewalls to the opening deters migration or diffusing of copper ions into the dielectric material.

7. 发明授权

US06350689B1 Method to remove copper contamination by using downstream oxygen and chelating agent plasma 失效
标题翻译：使用下游氧和螯合剂等离子体去除铜污染的方法
公开(公告)号：US06350689B1
公开(公告)日：2002-02-26
申请号：US09839962
申请日：2001-04-23
申请人： Paul Ho , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Yi Xu
发明人： Paul Ho , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L21/02074 , H01L21/02046 , H01L21/0209 , H01L21/32136 , Y10S438/906
摘要： A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxidizing radical containing downstream plasma is provided from a first source (alternatively halogen (F2, Cl2, or Br2) may be used as on oxidizing agent). A vaporized chelating agent is provided from a second source. The oxidizing radical containing downstream plasma and vaporized chelating agent are mixed to form an oxidizing radical containing downstream plasma/vaporized chelating agent mixture. The mixture is directed to the copper contamination so that the mixture reacts with the copper contamination to form a volatile product. The volatile product is removed from the proximity of the wafer.
摘要翻译：一种从半导体晶片去除铜污染的方法，包括以下步骤。提供其上具有铜污染的半导体晶片。从第一来源提供含有下游等离子体的氧化基团（或者可以在氧化剂上使用卤素（F2，Cl2或Br2））。从第二来源提供蒸发的螯合剂。将含有下游等离子体和气化螯合剂的氧化基团混合以形成含有下游等离子体/汽化螯合剂混合物的氧化基团。混合物被引导到铜污染物，使得混合物与铜污染物反应形成挥发性产物。从晶片附近去除挥发性产物。

8. 发明授权

US06987321B2 Copper diffusion deterrent interface 失效
标题翻译：铜扩散阻止界面
公开(公告)号：US06987321B2
公开(公告)日：2006-01-17
申请号：US10718865
申请日：2003-11-21
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subbash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subbash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L23/48
CPC分类号： H01L21/76844 , H01L21/28556 , H01L21/31111 , H01L21/314 , H01L21/76807
摘要： Method and product for forming a dual damascene interconnect structure, wherein depositing a copper sulfide interface layer as sidewalls to the opening deters migration or diffusing of copper ions into the dielectric material.
摘要翻译：用于形成双镶嵌互连结构的方法和产品，其中将铜硫化物界面层作为开口的侧壁沉积阻止铜离子迁移或扩散到电介质材料中。

9. 发明授权

US06705512B2 Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding 有权
标题翻译：导电盖层在倒装芯片，芯棒和微金属接合中的应用方法
公开(公告)号：US06705512B2
公开(公告)日：2004-03-16
申请号：US10099283
申请日：2002-03-15
申请人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
发明人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
IPC分类号： B23K3102
CPC分类号： H01L24/85 , B23K20/007 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05184 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/04953 , H01L2224/78 , H01L2924/00
摘要： A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.
摘要翻译：将接合元件接合到金属接合焊盘的方法包括以下步骤。提供了一种在层开口内具有暴露的凹陷金属接合焊盘的半导体结构。该层具有上表面。在金属焊盘上形成具有预定厚度的导电盖。接合元件结合到导电盖以与金属接合焊盘形成电连接。

10. 发明授权

US06415973B1 Method of application of copper solution in flip-chip, COB, and micrometal bonding 失效
标题翻译：铜溶液在倒装芯片，COB和微结合中的应用方法
公开(公告)号：US06415973B1
公开(公告)日：2002-07-09
申请号：US09618672
申请日：2000-07-18
申请人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Mei Sheng Zhou , Yakub Aliyu , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
发明人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Mei Sheng Zhou , Yakub Aliyu , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
IPC分类号： B23K106
CPC分类号： H01L24/85 , B23K1/19 , B23K2101/40 , B23K2103/12 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/48992 , H01L2224/8592 , H01L2224/85948 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2224/78 , H01L2924/00
摘要： A method of bonding a bonding element to a metal bonding pad, comprising the following steps. A semiconductor structure having an exposed metal bonding pad within a passivation layer opening is provided. The bonding pad has an upper surface. A bonding element is positioned to contact the bonding pad upper surface. A bonding solution is applied within the passivation layer opening, covering the bonding pad and a portion of the bonding element. The structure is annealed by heating said bonding element to selectively solidify the bonding solution proximate said contact of said bonding element to said bonding pad, bonding the bonding element to the bonding pad.
摘要翻译：一种将接合元件接合到金属接合焊盘的方法，包括以下步骤。提供了在钝化层开口内具有暴露的金属焊盘的半导体结构。接合垫具有上表面。定位接合元件以接合焊盘上表面。在钝化层开口内施加粘合溶液，覆盖粘结垫和粘合元件的一部分。通过加热所述结合元件来对所述结构进行退火，以选择性地将所述接合元件的所述接触附近的接合溶液固化到所述接合焊盘，将所述接合元件接合到所述接合焊盘。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式