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1. 发明授权

US08282999B2 Spin-on film processing using acoustic radiation pressure 有权
标题翻译：旋转胶片处理使用声辐射压力
公开(公告)号：US08282999B2
公开(公告)日：2012-10-09
申请号：US12098124
申请日：2008-04-04
申请人： Nishant Sinha , Gurtej S. Sandhu , John Smythe
发明人： Nishant Sinha , Gurtej S. Sandhu , John Smythe
IPC分类号： B05D3/06 , B01J19/10 , B06B1/00 , H01L21/31
CPC分类号： H01L21/02282 , B01D19/0078 , B01F11/0071 , B05C11/02 , B05D1/005 , B05D3/12 , B08B3/12 , G03D3/04 , G03F7/162 , H01L21/31051 , H01L21/31058 , H01L21/312 , H01L21/67017 , H01L21/67092 , H01L21/6715 , H01L21/76819
摘要： An apparatus and process operate to impose sonic pressure upon a spin-on film liquid mass that exhibits a liquid topography and in a solvent vapor overpressure to alter the liquid topography. Other apparatus and processes are disclosed.
摘要翻译：一种装置和方法用于将声波压力施加在展现液体形貌和溶剂蒸汽超压中以改变液体形貌的旋涂膜液体质量上。公开了其他装置和方法。

2. 发明授权

US08223539B2 GCIB-treated resistive device 有权
标题翻译： GCIB处理电阻器件
公开(公告)号：US08223539B2
公开(公告)日：2012-07-17
申请号：US12693936
申请日：2010-01-26
申请人： John Smythe , Gurtej S. Sandhu
发明人： John Smythe , Gurtej S. Sandhu
IPC分类号： G11C11/34
CPC分类号： H01L45/165 , G11C13/0007 , G11C2213/56 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1641 , H01L45/1683
摘要： The present disclosure includes GCIB-treated resistive devices, devices utilizing GCIB-treated resistive devices (e.g., as switches, memory cells), and methods for forming the GCIB-treated resistive devices. One method of forming a GCIB-treated resistive device includes forming a lower electrode, and forming an oxide material on the lower electrode. The oxide material is exposed to a gas cluster ion beam (GCIB) until a change in resistance of a first portion of the oxide material relative to the resistance of a second portion of the oxide material. An upper electrode is formed on the first portion.
摘要翻译：本公开包括GCIB处理的电阻性装置，利用GCIB处理的电阻性装置（例如，作为开关，存储器单元）的装置以及用于形成经GCIB处理的电阻装置的方法。形成GCIB处理的电阻性器件的一种方法包括形成下电极，并在下电极上形成氧化物材料。将氧化物材料暴露于气体簇离子束（GCIB），直到氧化物材料的第一部分的电阻相对于氧化物材料的第二部分的电阻发生变化。上电极形成在第一部分上。

3. 发明申请

US20120068143A1 Memory Arrays And Methods Of Forming Memory Cells 有权
标题翻译：内存阵列和形成记忆体的方法
公开(公告)号：US20120068143A1
公开(公告)日：2012-03-22
申请号：US12886283
申请日：2010-09-20
申请人： John Smythe , Gurtej S. Sandhu
发明人： John Smythe , Gurtej S. Sandhu
IPC分类号： H01L45/00 , H01L21/16
CPC分类号： H01L45/145 , H01L27/2409 , H01L27/2472 , H01L27/2481
摘要： Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric material directly against multivalent metal oxide.
摘要翻译：一些实施例包括利用导电线，电极和可编程材料的各种布置形成存储单元的方法; 其中可编程材料含有高k电介质材料直接抵抗多价金属氧化物。一些实施例包括存储器单元的阵列，其中存储单元包括直接对抗多价金属氧化物的包含高k电介质材料的可编程材料。

4. 发明授权

US08133664B2 Methods of forming patterns 有权
标题翻译：形成图案的方法
公开(公告)号：US08133664B2
公开(公告)日：2012-03-13
申请号：US12397083
申请日：2009-03-03
申请人： Scott Sills , Gurtej S. Sandhu , John Smythe , Ming Zhang
发明人： Scott Sills , Gurtej S. Sandhu , John Smythe , Ming Zhang
IPC分类号： G03F7/26
CPC分类号： H01L21/0274 , G03F7/20 , G03F7/40 , H01L21/0337 , H01L21/0338
摘要： Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.
摘要翻译：一些实施例包括形成开口图案的方法。所述方法可以包括在衬底上形成间隔的特征。特征可以具有顶部并且可以具有从顶部向下延伸的侧壁。第一材料可以沿着特征的顶部和侧壁形成。第一材料可以通过将特征上的第一材料的共形层旋转浇铸而形成，或通过相对于基底的特征的选择性沉积来形成。在形成第一材料之后，可以在特征之间提供填充材料，同时使第一材料的区域暴露。然后可以相对于填充材料和特征来选择性地去除第一材料的暴露区域以产生开口图案。

5. 发明授权

US09343665B2 Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array 有权
标题翻译：形成非易失性电阻氧化物存储单元的方法和形成非易失性电阻氧化物存储器阵列的方法
公开(公告)号：US09343665B2
公开(公告)日：2016-05-17
申请号：US12166604
申请日：2008-07-02
申请人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej S. Sandhu , Joseph Neil Greeley , Kunal R. Parekh
发明人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej S. Sandhu , Joseph Neil Greeley , Kunal R. Parekh
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1683 , H01L27/2472 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/16
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.
摘要翻译：形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。含金属氧化物的材料形成在第一导电电极上。蚀刻停止材料沉积在包含金属氧化物的材料上。导电材料沉积在蚀刻停止材料上。包含所接收的导电材料的存储单元的第二导电电极形成在蚀刻停止材料上。这样包括通过导电材料蚀刻以相对于蚀刻停止材料停止并且形成非易失性电阻氧化物存储单元，以包括具有包含金属氧化物的材料和其间的蚀刻停止材料的第一和第二导电电极。考虑其他实现。

6. 发明申请

US20130313678A1 Memory Cells And Methods Of Forming Memory Cells 有权
标题翻译：记忆细胞和形成记忆细胞的方法
公开(公告)号：US20130313678A1
公开(公告)日：2013-11-28
申请号：US13480610
申请日：2012-05-25
申请人： John Smythe , Gurtej S. Sandhu
发明人： John Smythe , Gurtej S. Sandhu
IPC分类号： H01L29/86 , H01L21/02
CPC分类号： H01L45/12 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/16 , H01L45/1675
摘要： A method of forming a memory cell includes forming programmable material within an opening in dielectric material over an elevationally inner conductive electrode of the memory cell. Conductive electrode material is formed over the dielectric material and within the opening. The programmable material within the opening has an elevationally outer edge surface angling elevationally and laterally inward relative to a sidewall of the opening. The conductive electrode material is formed to cover over the angling surface of the programmable material within the opening. The conductive electrode material is removed back at least to an elevationally outermost surface of the dielectric material and to leave the conductive electrode material covering over the angling surface of the programmable material within the opening. The conductive electrode material constitutes at least part of an elevationally outer conductive electrode of the memory cell. Memory cells independent of method of manufacture are also disclosed.
摘要翻译：形成存储单元的方法包括在电介质材料的开口内形成可编程材料，该存储单元在存储单元的顶部内导电电极之上。导电电极材料形成在电介质材料上并且在开口内。开口内的可编程材料具有相对于开口的侧壁正向和横向向内倾斜的垂直外边缘表面。导电电极材料形成为覆盖开口内可编程材料的倾斜表面。导电电极材料至少移除到介电材料的最外表面，并将导电电极材料覆盖在开口内的可编程材料的倾斜表面上。导电电极材料构成存储单元的正面外导电电极的至少一部分。还公开了与制造方法无关的存储单元。

7. 发明申请

US20130092894A1 MEMORY CELLS AND MEMORY CELL ARRAYS 有权
标题翻译：记忆细胞和记忆细胞阵列
公开(公告)号：US20130092894A1
公开(公告)日：2013-04-18
申请号：US13275168
申请日：2011-10-17
申请人： Scott E. Sills , Gurtej S. Sandhu , Sanh D. Tang , John Smythe
发明人： Scott E. Sills , Gurtej S. Sandhu , Sanh D. Tang , John Smythe
IPC分类号： H01L47/00
CPC分类号： H01L45/1226 , H01L27/2409 , H01L27/2427 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/085 , H01L45/124 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/148
摘要： Some embodiments include memory cells. The memory cells may have a first electrode, and a trench-shaped programmable material structure over the first electrode. The trench-shape defines an opening. The programmable material may be configured to reversibly retain a conductive bridge. The memory cell may have an ion source material directly against the programmable material, and may have a second electrode within the opening defined by the trench-shaped programmable material. Some embodiments include arrays of memory cells. The arrays may have first electrically conductive lines, and trench-shaped programmable material structures over the first lines. The trench-shaped structures may define openings within them. Ion source material may be directly against the programmable material, and second electrically conductive lines may be over the ion source material and within the openings defined by the trench-shaped structures.
摘要翻译：一些实施例包括存储器单元。存储单元可以具有第一电极和在第一电极上方的沟槽状可编程材料结构。沟槽形状限定开口。可编程材料可以被配置为可逆地保持导电桥。存储单元可以具有直接抵靠可编程材料的离子源材料，并且可以在由沟槽状可编程材料限定的开口内具有第二电极。一些实施例包括存储器单元阵列。阵列可以具有第一导电线，以及在第一线上的沟槽状可编程材料结构。沟槽状结构可以在其内限定开口。离子源材料可以直接抵靠可编程材料，并且第二导电线可以在离子源材料之上并且在由沟槽状结构限定的开口内。

8. 发明授权

US08409915B2 Methods of forming memory cells 有权
标题翻译：形成记忆细胞的方法
公开(公告)号：US08409915B2
公开(公告)日：2013-04-02
申请号：US12886283
申请日：2010-09-20
申请人： John Smythe , Gurtej S. Sandhu
发明人： John Smythe , Gurtej S. Sandhu
IPC分类号： H01L21/00
CPC分类号： H01L45/145 , H01L27/2409 , H01L27/2472 , H01L27/2481
摘要： Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric material directly against multivalent metal oxide.
摘要翻译：一些实施例包括利用导电线，电极和可编程材料的各种布置形成存储单元的方法; 其中可编程材料含有高k电介质材料直接抵抗多价金属氧化物。一些实施例包括存储器单元的阵列，其中存储单元包括直接对抗多价金属氧化物的含有高k电介质材料的可编程材料。

9. 发明申请

US20110315944A1 RESISTIVE MEMORY AND METHODS OF PROCESSING RESISTIVE MEMORY 有权
公开(公告)号：US20110315944A1
公开(公告)日：2011-12-29
申请号：US13226950
申请日：2011-09-07
申请人： Gurtej S. Sandhu , John Smythe
发明人： Gurtej S. Sandhu , John Smythe
IPC分类号： H01L45/00 , H01L21/8239
CPC分类号： H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/1273 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1658
摘要： Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include conformally forming a cell material in an opening in an interlayer dielectric such that a seam is formed in the cell material, forming a conductive pathway by modifying the seam, and forming an electrode on the cell material and the seam.

10. 发明授权

US08048755B2 Resistive memory and methods of processing resistive memory 有权
标题翻译：电阻记忆和处理电阻记忆的方法
公开(公告)号：US08048755B2
公开(公告)日：2011-11-01
申请号：US12701885
申请日：2010-02-08
申请人： Gurtej S. Sandhu , John Smythe
发明人： Gurtej S. Sandhu , John Smythe
IPC分类号： H01L21/20 , H01L29/00 , G11C11/00
CPC分类号： H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/1273 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1658
摘要： Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include conformally forming a cell material in an opening in an interlayer dielectric such that a seam is formed in the cell material, forming a conductive pathway by modifying the seam, and forming an electrode on the cell material and the seam.
摘要翻译：本文描述了电阻存储器和处理电阻性存储器的方法。处理电阻性存储器的一个或多个方法实施例包括在层间电介质的开口中共形形成电池材料，使得在电池材料中形成接缝，通过改变接缝形成导电通路，并在电池材料上形成电极和接缝。

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