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1. 发明授权

US4547824A Dual biasing for integrated inductive MR head 失效
标题翻译：用于集成感应磁头的双偏置
公开(公告)号：US4547824A
公开(公告)日：1985-10-15
申请号：US450622
申请日：1982-12-17
申请人： John S. Best , Kenneth Lee , Ching H. Tsang
发明人： John S. Best , Kenneth Lee , Ching H. Tsang
IPC分类号： G11B5/31 , G11B5/39 , G11B5/12
CPC分类号： G11B5/3912 , G11B5/3967 , G11B5/398 , G11B5/399
摘要： A dual element magnetic transducer in which the thin film MR read element is transversely biased by flux in the air gap of the inductive write core generated by a bias current supplied to the write winding. Flux in the air gap biases the MR element because different integral portions of the MR element have a different spatial relationship to parallel opposing portions of the inductive core. The flux which would normally pass through the gap substantially normal to the sides of the core defining the gap now tends to follow the MR element along a direction normal or transverse to the media to a point where the distance between the MR element and the core is smaller than where it entered. By appropriate control of the bias current and the spatial relationships, a relatively efficient, simple to manufacture dual element magnetic transducer is provided.
摘要翻译：一种双元件磁传感器，其中薄膜MR读取元件由通过提供给写入绕组的偏置电流产生的感应写入磁芯的气隙中的磁通横向偏置。由于MR元件的不同的积分部分与感性芯的平行相对部分具有不同的空间关系，所以气隙中的通量会偏置MR元件。通常通过间隙的磁通大致垂直于限定间隙的芯的侧面，现在倾向于沿着垂直于或横向于介质的方向跟随MR元件到MR元件和芯之间的距离为小于进入的地方。通过适当地控制偏置电流和空间关系，提供了一种相对有效，简单的制造双元件的磁换能器。

2. 发明授权

US06631055B2 Tunnel valve flux guide structure formed by oxidation of pinned layer 有权
公开(公告)号：US06631055B2
公开(公告)日：2003-10-07
申请号：US09877358
申请日：2001-06-08
申请人： Jeffrey R. Childress , Robert E. Fontana , Kuok San Ho , Ching H. Tsang
发明人： Jeffrey R. Childress , Robert E. Fontana , Kuok San Ho , Ching H. Tsang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , Y10T29/49044
摘要： A flux guided magnetic tunnel junction head includes a ferromagnetic pinned layer having an active region with a front edge recessed from a sensing surface, and a non-active region located between the sensing surface and the active region. The non-active region of the ferromagnetic pinned layer is rendered substantially non-conducting by chemically processing the ferromagnetic material of the ferromagnetic pinned layer in this region. The flux guided MTJ head also includes a ferromagnetic free layer having a front edge substantially coplanar with a sensing surface. The ferromagnetic free layer can function as a flux guide to direct magnetic flux from a recording medium to the tunnel junction. The location of the front edge of the ferromagnetic pinned layer prevents any shorting of the flux guided MTJ head occurring when the head is lapped at the sensing surface.

3. 发明授权

US5452163A Multilayer magnetoresistive sensor 失效
标题翻译：多层磁阻传感器
公开(公告)号：US5452163A
公开(公告)日：1995-09-19
申请号：US173590
申请日：1993-12-23
申请人： Kevin R. Coffey , Robert E. Fontana , James K. Howard , Todd L. Hylton , Michael A. Parker , Ching H. Tsang
发明人： Kevin R. Coffey , Robert E. Fontana , James K. Howard , Todd L. Hylton , Michael A. Parker , Ching H. Tsang
IPC分类号： G01R33/09 , G11B5/39 , H01L43/10
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01L43/10 , G11B2005/3996
摘要： A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
摘要翻译：磁阻读取传感器包括由平面阵列中的一个或多个磁阻元件形成的多层感测元件，每个磁阻元件具有由非磁性层隔开的至少两个铁磁层的多层结构。铁磁层通过在铁磁层的相对边缘处的静磁耦合而反铁磁耦合。通过间隔层与磁阻感测元件分离的偏置层提供磁场以将磁阻感测元件偏置在期望的非信号点以进行线性响应。磁阻感测元件通过在衬底上交替地沉积铁磁材料层和非磁性材料层而形成，然后使用光刻技术对所得结构进行构图以提供磁阻元件的平面阵列。导电层沉积在填充在分离磁阻元件的空间中的阵列上，以提供结构平面中的元件之间的导电性。

4. 发明授权

US4663685A Magnetoresistive read transducer having patterned longitudinal bias 失效
标题翻译：具有图案化纵向偏置的磁阻读取传感器
公开(公告)号：US4663685A
公开(公告)日：1987-05-05
申请号：US766157
申请日：1985-08-15
申请人： Ching H. Tsang
发明人： Ching H. Tsang
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , G11B5/30
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , H01L43/08
摘要： A magnetoresistive (MR) read transducer assembly in which the thin film MR layer is longitudinally biased only in the end regions by exchange bias developed by a thin film of antiferromagnetic material that is deposited in direct contact with the MR layer in the end regions. The longitudinal bias is of a level sufficient to maintain the end regions of the MR layer in a single domain state and thereby induce a single domain state in the central region of the MR layer. Transverse bias is produced within the central region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductive elements are connected to the MR layer within the central region to define a detection region so that signal output means connected to the conductive elements can determine the resistance changes in the detection region of the MR layer as a function of the fields which are intercepted by the MR layer.
摘要翻译：一种磁阻（MR）读取传感器组件，其中薄膜MR层仅在末端区域中纵向偏置，该交换偏压是由反铁磁性材料薄膜所形成的，该薄膜与端层区域中的MR层直接接触。纵向偏压的水平足以将MR层的端部区域维持在单一畴状态，从而在MR层的中心区域中引起单畴状态。在MR层的中心区域内产生一个足以将该MR层的区域维持在线性响应模式的水平的横向偏压。间隔的导电元件连接到中心区域内的MR层以限定检测区域，使得连接到导电元件的信号输出装置可以确定MR层的检测区域中的电阻变化，作为截断的场的函数由MR层。

5. 发明授权

US06680832B2 CPP magnetoresistive sensors with in-stack longitudinal biasing and overlapping magnetic shield 失效
标题翻译： CPP磁阻传感器具有堆叠纵向偏置和重叠磁屏蔽
公开(公告)号：US06680832B2
公开(公告)日：2004-01-20
申请号：US09853352
申请日：2001-05-11
申请人： Robert E. Fontana, Jr. , Kuok San Ho , Jordan A. Katine , Jeffrey S. Lille , Ching H. Tsang
发明人： Robert E. Fontana, Jr. , Kuok San Ho , Jordan A. Katine , Jeffrey S. Lille , Ching H. Tsang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/112 , G11B5/313 , G11B5/3909 , G11B5/3912 , G11B5/398 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor or read head has a magnetic shield geometry that covers the side walls of the sensor structure to prevent side reading caused by magnetic flux entering from adjacent data tracks. The shield geometry includes a bottom shield with a substantially planar surface and a specially shaped top shield. The top shield has substantially vertical portions generally parallel to the side walls of the sensor structure, a horizontal top portion over the trackwidth region of the sensor, and horizontal side portions formed over the portions of the bottom shield on either side of the sensor structure. The insulating gap material that separates the bottom and top shields is in contact with the horizontal portions of the bottom shield and the side walls of the sensor structure.
摘要翻译：电流垂直平面（CPP）磁阻传感器或读头具有覆盖传感器结构的侧壁的磁屏蔽几何形状，以防止由相邻数据轨道进入的磁通量引起的侧读。屏蔽几何形状包括具有基本平坦表面的底部屏蔽和特别形状的顶部屏蔽。顶部屏蔽件具有大致平行于传感器结构的侧壁的大致垂直部分，在传感器的轨道宽度区域上方的水平顶部部分，以及形成在传感器结构的任一侧上的底部屏蔽部分之上的水平侧部分。分离底部和顶部屏蔽件的绝缘间隙材料与底部屏蔽件的水平部分和传感器结构的侧壁接触。

6. 发明授权

US5285339A Magnetoresistive read transducer having improved bias profile 失效
标题翻译：具有改进的偏置轮廓的磁阻读取传感器
公开(公告)号：US5285339A
公开(公告)日：1994-02-08
申请号：US843702
申请日：1992-02-28
申请人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3903
摘要： An MR read transducer having passive end regions separated by a central active region comprises an MR layer made from a material having a low uniaxial magnetic anisotropy. A soft magnetic bias layer is adjacent to but spaced from the MR layer in the central region only, and the soft magnetic bias layer is made from a material having a high uniaxial magnetic anisotropy. A longitudinal bias is produced directly in each of the end regions only, and the means for producing the longitudinal bias comprise a layer made from a material having a high uniaxial magnetic anisotropy. Control of the uniaxial anisotropy can be achieved by choosing materials of appropriate magnetostriction or intrinsic uniaxial anisotropy.
摘要翻译：具有由中心有源区域分离的无源端区域的MR读取传感器包括由具有低单轴磁各向异性的材料制成的MR层。软磁偏置层仅与中心区域中的MR层相邻但间隔开，并且软磁偏置层由具有高单轴磁各向异性的材料制成。仅在每个端部区域中直接产生纵向偏压，并且用于产生纵向偏压的装置包括由具有高单轴磁各向异性的材料制成的层。单轴各向异性的控制可以通过选择适当的磁致伸缩材料或固有单轴各向异性来实现。

7. 发明授权

US5262914A Magnetoresistive head with enhanced exchange bias field 失效
标题翻译：具有增强的交流偏置场的磁阻头
公开(公告)号：US5262914A
公开(公告)日：1993-11-16
申请号：US779221
申请日：1991-10-18
申请人： Mao-Min Chen , Ching H. Tsang
发明人： Mao-Min Chen , Ching H. Tsang
IPC分类号： G11B5/39 , B05D5/12 , H01L43/08
CPC分类号： G11B5/399
摘要： A magnetoresistive (MR) read transducer in which a layered structure comprising an MR layer, an antiferromagnetic material in direct contact with the MR layer and a thin layer of interdiffusion material in contact with the layer of antiferromagnetic material is subjected to a heating process to a temperature within a chosen temperature for a chosen time to form a magnetic interface between the antiferromagnetic material the MR layer. The magnetic interface produces a high level of exchange bias with the MR layer.
摘要翻译：一种磁阻（MR）读取传感器，其中包括MR层，与MR层直接接触的反铁磁材料和与反铁磁材料层接触的相互扩散材料的薄层的分层结构经受加热处理温度在所选择的温度内选定的时间，以形成反铁磁材料MR层之间的磁界面。磁性界面与MR层产生高水平的交换偏压。

8. 发明授权

US5444589A Rotary actuator disk drive with identical dual-element read/write transducers 失效
标题翻译：具有相同双元件读/写传感器的旋转执行器磁盘驱动器
公开(公告)号：US5444589A
公开(公告)日：1995-08-22
申请号：US162513
申请日：1993-12-02
申请人： Hung L. Hu , Ching H. Tsang
发明人： Hung L. Hu , Ching H. Tsang
IPC分类号： G11B5/596 , G11B5/012 , G11B5/035 , G11B5/39 , G11B5/48 , G11B21/02 , G11B5/147 , G11B5/55
CPC分类号： G11B5/035 , G11B5/012 , G11B5/39 , G11B5/4886
摘要： A rotary actuator disk drive uses substantially identical dual-element inductive write/magnetoresistive read transducers for both the top and bottom disk surfaces. There is no requirement that the read elements be mechanically offset from the write elements, as is typically the case in rotary actuator disk drives due to the head-to-track skew caused by the inherent nonlinear path of the heads across the data tracks. The transducers are supported on the trailing ends of the head carriers in such a manner that the geometric centers of the read and write elements are aligned without any mechanical offset. Sense currents of opposite polarity are provided to the magnetoresisitve read elements adjacent the top and bottom disk surfaces to shift the magnetic centers of the top and bottom read elements in opposite directions relative to their geometric centers. The amount and direction of the magnetic shift is such that the read elements are effectively offset from their respective write elements so that the skew caused by the rotary actuator has minimal effect on alignment of the read and write elements with the data tracks.
摘要翻译：旋转致动器盘驱动器对顶部和底部盘表面使用基本相同的双元件感应写入/磁阻读取换能器。没有要求读取元件与写入元件机械地偏移，如旋转致动器盘驱动器中通常由于头部到数据轨道的固有非线性路径引起的头对轨倾斜引起的。换能器以这样的方式被支撑在磁头托架的尾端上，使得读取和写入元件的几何中心在没有任何机械偏移的情况下对准。将相反极性的感测电流提供给邻近顶部和底部磁盘表面的磁致伸缩读取元件，以使顶部和底部读取元件的磁性中心相对于它们的几何中心相反的方向移动。磁偏移的量和方向使得读取元件有效地偏离其各自的写入元件，使得由旋转致动器引起的偏斜对读取和写入元件与数据轨道的对准具有最小的影响。

9. 发明授权

US5438747A Method of making a thin film merged MR head with aligned pole tips 失效
标题翻译：制造薄膜的方法将具有对准极尖的MR头并入
公开(公告)号：US5438747A
公开(公告)日：1995-08-08
申请号：US208398
申请日：1994-03-09
申请人： Mohamad T. Krounbi , Jyh-Shuey J. Lo , Ching H. Tsang , Robert M. Valletta
发明人： Mohamad T. Krounbi , Jyh-Shuey J. Lo , Ching H. Tsang , Robert M. Valletta
IPC分类号： G11B5/31 , G11B5/39
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/3163 , Y10T29/49048
摘要： A merged MR head is provided which has vertically aligned sidewalls so as to minimize side-fringing and improve off-track performance. The bottom pole piece P1, which comprises the second shield layer S2 of the read head, has a pedestal pole tip with a short length dimension. A pedestal pole tip with a length as short as two times the length of the gap layer G optimally minimizes the sidewriting and improves off-track performance. The bottom pole tip structure of the write head is constructed by ion beam milling using the top pole tip structure as a mask. The ion beam milling is directed at an angle to the sidewalls of the top pole tip structure which causes the bottom pole tip structure to be milled with sidewalls which align with the top pole tip structure. The ion beam milling can comprise two angled beams, either sequentially or simultaneously, the first beam performing primarily a cutting operation and some clean up work while the second beam primarily conducts clean up work of the redeposition of the debris caused by the cutting. In another embodiment, a single angled ion beam can be employed, provided its angle is within a particular range.
摘要翻译：提供了具有垂直对齐的侧壁的合并的MR头，以便使边缘最小化并且提高离轨性能。包括读取头的第二屏蔽层S2的底极片P1具有短长度尺寸的基座极头。长度短到间隙层G的长度的两倍的基座极尖最优化了笔迹的最小化并改善了离轨性能。写头的底极尖端结构是通过使用顶极尖端结构作为掩模的离子束铣削构成的。离子束铣削与顶极尖端结构的侧壁成一角度地引导，这导致底极尖端结构被与顶极尖端结构对准的侧壁铣削。离子束铣削可以包括两个成角度的梁，顺序地或同时地，第一梁主要执行切割操作和一些清理工作，而第二梁主要进行由切割引起的碎片的再沉积的清理工作。在另一个实施例中，只要其角度在特定范围内即可使用单角度离子束。

10. 发明授权

US5262904A Method and apparatus for measuring and compensating nonlinear bitshift 失效
标题翻译：用于测量和补偿非线性位移的方法和装置
公开(公告)号：US5262904A
公开(公告)日：1993-11-16
申请号：US643975
申请日：1991-01-22
申请人： Yaw S. Tang , Ching H. Tsang
发明人： Yaw S. Tang , Ching H. Tsang
IPC分类号： G11B5/09 , G11B7/00 , G11B7/0045 , G11B7/0055 , G11B20/10
CPC分类号： G11B20/10212
摘要： A method and device for use in measurement and compensation of nonlinear bitshift in nonlinear communication media such as magnetic and optical recording devices. The method and device are based on special bit patterns constructed to eliminate at least one harmonic of the fundamental frequency of the data pattern if all bits are communicated without any nonlinear bitshift. The presence of nonlinear bitshift is manifested by the appearance of the harmonic. By measuring the magnitude of the harmonic, the amount of nonlinear bitshift is determined, and compensation adjustment is then used to offset its effect on the data detection scheme.

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