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    • 1. 发明授权
    • Integrated circuit including semiconductor power device and electrically isolated thermal sensor
    • 集成电路包括半导体功率器件和电隔离热传感器
    • US06906399B2
    • 2005-06-14
    • US10287034
    • 2002-11-04
    • John R. FruthScott B. Kesler
    • John R. FruthScott B. Kesler
    • G01K7/01H01L29/739H01L29/78H01L27/82
    • H01L29/7804G01K7/01H01L29/0696H01L29/7395
    • An integrated circuit (10) includes a thermal sensing device (20) and a power-switching device (12) such as an IGBT. The power device (12) is fabricated in a conventional manner on a semiconductor substrate, and the thermal sensing device (20) is fabricated on an electrical insulation layer (74) formed over the substrate. The thermal sensing device (20) may be provided in the form of a number of series-connected polysilicon diodes (D1-D3) positioned adjacent to the power device (12) such that the operating temperature of the thermal sensing device (20) is near that of the power device (12). In response to an input current IC, the thermal sensing device (20) produces an output voltage (VD) that is substantially linear with surface die temperature, and which reacts rapidly to changes in surface die temperature. The thermal sensing device (20) is completely electrically isolated from the power device, thereby eliminating any electrical interaction therebetween.
    • 集成电路(10)包括热感测装置(20)和诸如IGBT的功率开关装置(12)。 功率器件(12)以常规方式制造在半导体衬底上,并且热感测器件(20)制造在形成在衬底上的电绝缘层(74)上。 热感测装置(20)可以以邻近功率装置(12)定位的多个串联多晶硅二极管(D 1 -D 3)的形式提供,使得热感测装置(20)的工作温度 )接近功率器件(12)的功率器件。 响应于输入电流I C C,热感测装置(20)产生与表面模头温度基本上线性的输出电压(V SUB D),并且其响应于 迅速改变表面模头温度。 热感测装置(20)与动力装置完全电绝缘,从而消除它们之间的任何电气相互作用。
    • 2. 发明授权
    • Thermal overload protection circuit for an automotive ignition system
    • 汽车点火系统热过载保护电路
    • US06987655B2
    • 2006-01-17
    • US10287033
    • 2002-11-04
    • Scott B. KeslerDuane E. BeylerJohn R. Fruth
    • Scott B. KeslerDuane E. BeylerJohn R. Fruth
    • H02H5/04
    • H03K17/0828F02D2041/2065F02D2041/2075F02P3/051H03K2017/0806
    • Thermal overload protection circuitry 14 for an automotive ignition system includes a gate drive circuit (18) responsive to a control signal (ESTB) to produce a drive signal (VGD) for driving a power switching device (22) separate from the protection circuitry (14), and a thermal overload protection circuit (40) configured to supply a first current (I1) to a thermal sensing component (38) associated with, and having an operating temperature defined by, the power switching device (22), wherein the first current (I1) has a magnitude defined by the operating temperature of the thermal sensing component (38). The first current is multiplied by a current controlled current source (60) to produce a second current (I2), and the second current is used to limit the drive signal (VGD) to thereby maintain the operating temperature of the power switching device (22) below an operating temperature limit.
    • 用于汽车点火系统的热过载保护电路14包括响应于控制信号(ESTB)产生用于驱动电力开关装置(22)的驱动信号(V SUB)的门驱动电路(18) )与保护电路(14)分离,以及热过载保护电路(40),其被配置为向第一电流(I 1)提供与热功率相关联并具有由功率定义的工作温度的热敏元件(38) 开关装置(22),其中所述第一电流(I1)具有由所述热感测部件(38)的工作温度限定的大小。 第一电流乘以电流控制电流源(60)以产生第二电流(I 2),并且第二电流用于限制驱动信号(V SUB),从而保持 电力开关装置(22)的工作温度低于工作温度限制。
    • 5. 发明授权
    • Leakage current compensation circuit
    • 泄漏电流补偿电路
    • US06369646B1
    • 2002-04-09
    • US09771056
    • 2001-01-29
    • Scott B. KeslerThomas L. Dinkledine
    • Scott B. KeslerThomas L. Dinkledine
    • H01L2500
    • H03F1/302H01L21/761H01L29/0821H01L2924/0002H01L2924/00
    • A compensation circuit provides a compensation current to a node of an integrated circuit that experiences increased reverse-bias leakage current between a n-type leaking epitaxial region and a p-type substrate with increased temperature. The compensation circuit includes a p-type substrate, a n-type compensator epitaxial region, an contact region, a center p-type region and a plurality of peripheral p-type regions. The peripheral p-type regions function as either a node collector or a reference collector. The compensation current is substantially determined by the ratio of the total peripheral surface area facing the center p-type region associated with the node collector and the total peripheral surface area facing the center p-type region associated with the reference collector and is also determined by the total surface area of the n-type compensator epitaxial region.
    • 补偿电路向集成电路的节点提供补偿电流,该集成电路的节点在具有升高的温度的n型泄漏外延区域和p型衬底之间经历增加的反向偏置漏电流。 补偿电路包括p型衬底,n型补偿器外延区域,接触区域,中心p型区域和多个外围p型区域。 外围p型区域用作节点收集器或参考收集器。 补偿电流基本上由面对与节点收集器相关联的中心p型区域的总外围表面面积与面向与参考收集器相关联的中心p型区域的总外围表面积的比率确定,并且还由 n型补偿器外延区域的总表面积。
    • 7. 发明申请
    • Switching control system to reduce coil output voltage when commencing coil charging
    • 开关控制系统,可在线圈充电时减小线圈输出电压
    • US20080012041A1
    • 2008-01-17
    • US11484502
    • 2006-07-11
    • Scott B. Kesler
    • Scott B. Kesler
    • H01L29/74
    • F02P3/053F02P3/0456F02P9/002F02P11/00H03K17/14H03K17/30H03K17/567
    • A switching control system and method is provided that optimizes switching efficiencies for power switching applications including automotive ignition systems, solenoid drivers, motor drivers and power regulation systems. In an ignition system, a coil current switching magnitude is controlled at the start of ignition coil charging, thereby avoiding an untimely spark event. When the transistor threshold voltage is reached, the collapse rate of the ignition system transistor collector voltage is reduced by reducing the gate charging current. The reduced collector voltage slew rate results in a reduced primary and secondary coil output voltage. After the collector voltage collapses, a continued rapid charge is provided to place the transistor in a hard saturation bias condition. In an aspect, the present invention dynamically determines the threshold voltage of a power transistor. A mirror capacitor substantially matches a transistor gate voltage and a signal is generated when the mirror capacitor voltage proportionally exceeds the transistor gate voltage as a consequence of the transistor reaching a threshold voltage.
    • 提供一种开关控制系统和方法,其优化用于包括汽车点火系统,螺线管驱动器,电机驱动器和功率调节系统的功率开关应用的开关效率。 在点火系统中,在点火线圈充电开始时控制线圈电流切换量,从而避免不合时宜的火花事件。 当达到晶体管阈值电压时,通过减小栅极充电电流来降低点火系统晶体管集电极电压的崩溃率。 降低的集电极电压转换速率导致初级和次级线圈输出电压降低。 在集电极电压骤降之后,提供持续的快速充电以使晶体管处于硬饱和偏置状态。 在一方面,本发明动态地确定功率晶体管的阈值电压。 反射镜电容器基本上匹配晶体管栅极电压,并且当镜电容器电压成比例地超过晶体管栅极电压时产生信号,这是晶体管达到阈值电压的结果。
    • 9. 发明授权
    • Switching control system to reduce coil output voltage when commencing coil charging
    • 开关控制系统,可在线圈充电时减小线圈输出电压
    • US07675346B2
    • 2010-03-09
    • US11484502
    • 2006-07-11
    • Scott B. Kesler
    • Scott B. Kesler
    • H03K17/04
    • F02P3/053F02P3/0456F02P9/002F02P11/00H03K17/14H03K17/30H03K17/567
    • A switching control system and method is provided that optimizes switching efficiencies for power switching applications including automotive ignition systems, solenoid drivers, motor drivers and power regulation systems. In an ignition system, a coil current switching magnitude is controlled at the start of ignition coil charging, thereby avoiding an untimely spark event. When the transistor threshold voltage is reached, the collapse rate of the ignition system transistor collector voltage is reduced by reducing the gate charging current. The reduced collector voltage slew rate results in a reduced primary and secondary coil output voltage. After the collector voltage collapses, a continued rapid charge is provided to place the transistor in a hard saturation bias condition. In an aspect, the present invention dynamically determines the threshold voltage of a power transistor. A mirror capacitor substantially matches a transistor gate voltage and a signal is generated when the mirror capacitor voltage proportionally exceeds the transistor gate voltage as a consequence of the transistor reaching a threshold voltage.
    • 提供一种开关控制系统和方法,其优化用于包括汽车点火系统,螺线管驱动器,电机驱动器和功率调节系统的功率开关应用的开关效率。 在点火系统中,在点火线圈充电开始时控制线圈电流切换量,从而避免不合时宜的火花事件。 当达到晶体管阈值电压时,通过减小栅极充电电流来降低点火系统晶体管集电极电压的崩溃率。 降低的集电极电压转换速率导致初级和次级线圈输出电压降低。 在集电极电压骤降之后,提供持续的快速充电以使晶体管处于硬饱和偏置状态。 在一方面,本发明动态地确定功率晶体管的阈值电压。 反射镜电容器基本上匹配晶体管栅极电压,并且当镜电容器电压成比例地超过晶体管栅极电压时产生信号,这是晶体管达到阈值电压的结果。