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1. 发明授权

US06836134B2 Apparatus and method for determining leakage current between a first semiconductor region and a second semiconductor region to be formed therein 有权
标题翻译：用于确定要在其中形成的第一半导体区域和第二半导体区域之间的漏电流的装置和方法
公开(公告)号：US06836134B2
公开(公告)日：2004-12-28
申请号：US10167125
申请日：2002-06-11
申请人： Diane W. Sidner , John R. Fruth , Dean M. Dahlgnist
发明人： Diane W. Sidner , John R. Fruth , Dean M. Dahlgnist
IPC分类号： G01R3126
CPC分类号： H01L22/20
摘要： An apparatus and method for measuring leakage current between a first semiconductor region and a second semiconductor region to be formed therein includes a system for measuring surface minority carrier leakage within the first semiconductor region. A correlation is established between surface minority carrier lifetime in the first semiconductor region and leakage current between the first and second semiconductor regions, and in one embodiment a surface minority carrier lifetime threshold is designated based on this correlation. Leakage current between the first and second regions is acceptable if the measured surface minority carrier lifetime is greater than this threshold. In an alternate embodiment, a leakage current threshold is established, and the measured surface minority carrier leakage is converted via the correlation to a measured leakage current. Leakage current between the first and second regions is acceptable in this embodiment if the measured leakage current is less than the leakage current threshold.
摘要翻译：用于测量要形成的第一半导体区域和第二半导体区域之间的漏电流的装置和方法包括：用于测量第一半导体区域内的表面少数载流子泄漏的系统。在第一半导体区域中的表面少数载流子寿命和第一和第二半导体区域之间的漏电流之间建立相关性，并且在一个实施例中，基于该相关性来指定表面少数载流子寿命阈值。如果测量的表面少数载流子寿命大于该阈值，则第一和第二区域之间的泄漏电流是可接受的。在替代实施例中，建立泄漏电流阈值，并且将测量的表面少数载流子泄漏经由相关性转换为测量的泄漏电流。如果测得的泄漏电流小于泄漏电流阈值，则在本实施例中，第一和第二区域之间的泄漏电流是可以接受的。

2. 发明授权

US06906399B2 Integrated circuit including semiconductor power device and electrically isolated thermal sensor 有权
标题翻译：集成电路包括半导体功率器件和电隔离热传感器
公开(公告)号：US06906399B2
公开(公告)日：2005-06-14
申请号：US10287034
申请日：2002-11-04
申请人： John R. Fruth , Scott B. Kesler
发明人： John R. Fruth , Scott B. Kesler
IPC分类号： G01K7/01 , H01L29/739 , H01L29/78 , H01L27/82
CPC分类号： H01L29/7804 , G01K7/01 , H01L29/0696 , H01L29/7395
摘要： An integrated circuit (10) includes a thermal sensing device (20) and a power-switching device (12) such as an IGBT. The power device (12) is fabricated in a conventional manner on a semiconductor substrate, and the thermal sensing device (20) is fabricated on an electrical insulation layer (74) formed over the substrate. The thermal sensing device (20) may be provided in the form of a number of series-connected polysilicon diodes (D1-D3) positioned adjacent to the power device (12) such that the operating temperature of the thermal sensing device (20) is near that of the power device (12). In response to an input current IC, the thermal sensing device (20) produces an output voltage (VD) that is substantially linear with surface die temperature, and which reacts rapidly to changes in surface die temperature. The thermal sensing device (20) is completely electrically isolated from the power device, thereby eliminating any electrical interaction therebetween.
摘要翻译：集成电路（10）包括热感测装置（20）和诸如IGBT的功率开关装置（12）。功率器件（12）以常规方式制造在半导体衬底上，并且热感测器件（20）制造在形成在衬底上的电绝缘层（74）上。热感测装置（20）可以以邻近功率装置（12）定位的多个串联多晶硅二极管（D 1 -D 3）的形式提供，使得热感测装置（20）的工作温度）接近功率器件（12）的功率器件。响应于输入电流I C C，热感测装置（20）产生与表面模头温度基本上线性的输出电压（V SUB D），并且其响应于迅速改变表面模头温度。热感测装置（20）与动力装置完全电绝缘，从而消除它们之间的任何电气相互作用。

3. 发明授权

US5448174A Protective circuit having enhanced thermal shutdown 失效
标题翻译：保护电路具有增强的热关断功能
公开(公告)号：US5448174A
公开(公告)日：1995-09-05
申请号：US296287
申请日：1994-08-25
申请人： Mark W. Gose , John R. Fruth
发明人： Mark W. Gose , John R. Fruth
IPC分类号： H02H5/04 , H03K5/153 , H03H11/26
CPC分类号： H02H5/044
摘要： A protective circuit having enhanced and accurate thermal shutdown temperatures. The protective circuit establishes the thermal shutdown temperature within a predetermined range and provides an output signal when the thermal shutdown temperature is exceeded. The protective circuit, in one embodiment, comprises a current generator for supplying a predetermined collector current I.sub.c1, a current mirror arrangement for supplying a collector current I.sub.c2 which has a mirror response to that of the collector current I.sub.c1, a resistor arranged to have the mirror collector current I.sub.c2 flowing therethrough, and the combination of a resistor and a bipolar transistor serving as a thermal sensor. The current generator comprises at least a pair of bipolar transistors selected from one of the NPN and PNP types with each of said pair operating with different current densities. The base electrodes of the pair are interconnected by a resistor. The collector current I.sub.c1 flows through another resistor connected to the emitter electrode of one of said bipolar transistors. The current mirror arrangement has its mirror collector current determined by the value of the resistor at the emitter electrode of the bipolar transistor. The current mirror arrangement comprises bipolar transistors selected to be of the opposite NPN and PNP types as the current generator. The bipolar transistor serving as the thermal sensor is selected to be of the same type NPN and PNP as the current generator and has a known beta (.beta.) vs. V.sub.be relationship. The bipolar transistor is arranged in the output stage of the protective circuit and establishes a quantity V.sub.tsd which determines the thermal shutdown temperature. The V.sub.tsd quantity tracks the response of the beta (.beta.) parameter so as to cancel the effects that the variable V.sub.be parameter contributes to the thermal shutdown temperature.
摘要翻译：具有增强和精确的热关断温度的保护电路。保护电路将热关机温度设定在预定范围内，并在超过热关机温度时提供输出信号。在一个实施例中，保护电路包括用于提供预定的集电极电流Ic1的电流发生器，用于提供具有对集电极电流Ic1的反射响应的集电极电流Ic2的电流镜装置，布置成具有反射镜集电极电流Ic2流过，以及用作热传感器的电阻器和双极晶体管的组合。电流发生器包括从NPN和PNP型之一中选择的至少一对双极晶体管，其中每对所述对以不同的电流密度工作。该对的基极由电阻器互连。集电极电流Ic1流过连接到所述双极晶体管之一的发射极的另一个电阻。电流反射镜装置的反射镜集电极电流由双极晶体管的发射极电阻的值确定。电流镜装置包括选择为具有相反NPN和PNP类型的双极型晶体管作为电流发生器。用作热传感器的双极晶体管被选择为与电流发生器相同的类型NPN和PNP，并具有已知的β（β）对Vbe关系。双极晶体管被布置在保护电路的输出级中，并建立一个Vtsd，它确定热关断温度。 Vtsd量跟踪beta（beta）参数的响应，以消除变量Vbe参数对热关断温度有贡献的影响。

4. 发明授权

US06987655B2 Thermal overload protection circuit for an automotive ignition system 有权
标题翻译：汽车点火系统热过载保护电路
公开(公告)号：US06987655B2
公开(公告)日：2006-01-17
申请号：US10287033
申请日：2002-11-04
申请人： Scott B. Kesler , Duane E. Beyler , John R. Fruth
发明人： Scott B. Kesler , Duane E. Beyler , John R. Fruth
IPC分类号： H02H5/04
CPC分类号： H03K17/0828 , F02D2041/2065 , F02D2041/2075 , F02P3/051 , H03K2017/0806
摘要： Thermal overload protection circuitry 14 for an automotive ignition system includes a gate drive circuit (18) responsive to a control signal (ESTB) to produce a drive signal (VGD) for driving a power switching device (22) separate from the protection circuitry (14), and a thermal overload protection circuit (40) configured to supply a first current (I1) to a thermal sensing component (38) associated with, and having an operating temperature defined by, the power switching device (22), wherein the first current (I1) has a magnitude defined by the operating temperature of the thermal sensing component (38). The first current is multiplied by a current controlled current source (60) to produce a second current (I2), and the second current is used to limit the drive signal (VGD) to thereby maintain the operating temperature of the power switching device (22) below an operating temperature limit.
摘要翻译：用于汽车点火系统的热过载保护电路14包括响应于控制信号（ESTB）产生用于驱动电力开关装置（22）的驱动信号（V SUB）的门驱动电路（18））与保护电路（14）分离，以及热过载保护电路（40），其被配置为向第一电流（I 1）提供与热功率相关联并具有由功率定义的工作温度的热敏元件（38）开关装置（22），其中所述第一电流（I1）具有由所述热感测部件（38）的工作温度限定的大小。第一电流乘以电流控制电流源（60）以产生第二电流（I 2），并且第二电流用于限制驱动信号（V SUB），从而保持电力开关装置（22）的工作温度低于工作温度限制。

5. 发明授权

US06955164B2 Automotive ignition system with sparkless thermal overload protection 有权
标题翻译：汽车点火系统，无火花热过载保护
公开(公告)号：US06955164B2
公开(公告)日：2005-10-18
申请号：US10779906
申请日：2004-02-17
申请人： Scott B. Kesler , John R. Fruth
发明人： Scott B. Kesler , John R. Fruth
IPC分类号： F02P3/055 , G01K7/01 , F02P11/00
CPC分类号： F02P3/055 , F02D2041/2065 , F02P3/0453 , F02P9/002 , G01K7/01
摘要： An interface for providing thermal overload protection includes a switching device, a temperature indicating device, a drive circuit and a thermal monitoring circuit. The thermal monitoring circuit is coupled across the temperature indicating device and provides a shutdown signal to the drive circuit when the temperature of the switching device is above a predetermined temperature level as indicated by a temperature signal provided by the temperature indicating device. The drive circuit responds to the shutdown signal by removing current sources and current sinks from a control terminal of the switching device at which point leakage currents cause the switching device to reduce a drive current to an inductive load.
摘要翻译：用于提供热过载保护的接口包括开关装置，温度指示装置，驱动电路和热监测电路。当温度指示装置提供的温度信号所指示的开关装置的温度高于预定的温度水平时，热监测电路跨越温度指示装置耦合并提供关断信号给驱动电路。驱动电路通过从开关器件的控制端去除电流源和电流吸收器来响应关断信号，在该点处泄漏电流导致开关器件降低到感性负载的驱动电流。

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