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1. 发明授权

US06191453B1 Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology 有权
标题翻译：绝缘体上硅（SOI）技术中的侧绝缘栅双极晶体管（LIGBT）器件
公开(公告)号：US06191453B1
公开(公告)日：2001-02-20
申请号：US09459628
申请日：1999-12-13
申请人： John Petruzzello , Theodore Letavic , J. Van Zwol
发明人： John Petruzzello , Theodore Letavic , J. Van Zwol
IPC分类号： H01L2976
CPC分类号： H01L29/7394 , H01L29/0696 , H01L29/42368
摘要： A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a Lateral Insulated Gate Bipolar Transistor (LIGBT) device in an SOI layer on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first and a body contact region of the second conductivity type in the body region and connected to the source region. A lateral drift region of a first conductivity type is provided adjacent the body region and forms a lightly-doped drain region, and a drain contact region of the first conductivity type is provided laterally spaced apart from the body region by the drift region with an anode region of the second conductivity type in the drain region and connected to the drain contact region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region adjacent the body region, with the gate electrode being at least substantially insulated from the body region and drift region by a surface insulation region. Improved device performance is achieved by making a dimension of the source region in a direction normal to a direction of current flow between the source region and the drain contact region greater than a corresponding dimension of the drain contact region and of the anode region.
摘要翻译：横向薄膜绝缘体上硅（SOI）器件包括半导体衬底，衬底上的掩埋绝缘层和掩埋绝缘层上的SOI层中的侧绝缘栅双极晶体管（LIGBT）器件，并具有源极第一导电类型的区域形成在体区中与第二导电类型的第一导电类型的本体区域相反的第二导电类型的本体区域中并且连接到源极区域。第一导电类型的横向漂移区域设置在身体区域附近，并形成轻掺杂的漏极区域，并且第一导电类型的漏极接触区域通过漂移区域与体区域横向间隔开，阳极通过阳极区域，并且连接到漏极接触区域。栅极电极设置在主体区域的一部分上，在该区域中，在操作期间形成沟道区域并且延伸超过与身体区域相邻的横向漂移区域的一部分，栅电极至少与身体区域基本绝缘，漂移区域由表面绝缘区域。通过使源区域的尺寸沿垂直于源极区域和漏极接触区域之间的电流方向的方向大于漏极接触区域和阳极区域的对应尺寸来实现，从而实现改进的器件性能。

2. 发明授权

US6133591A Silicon-on-insulator (SOI) hybrid transistor device structure 失效
标题翻译：绝缘体上硅（SOI）混合晶体管器件结构
公开(公告)号：US6133591A
公开(公告)日：2000-10-17
申请号：US122407
申请日：1998-07-24
申请人： Theodore Letavic , Satyen Mukherjee , Arno Emmerik , J. Van Zwol
发明人： Theodore Letavic , Satyen Mukherjee , Arno Emmerik , J. Van Zwol
IPC分类号： H01L27/08 , H01L29/06 , H01L29/08 , H01L29/739 , H01L29/78 , H01L29/786 , H01L33/00 , H01L29/74 , H01L31/111
CPC分类号： H01L29/7394 , H01L29/0696 , H01L29/0834
摘要： A silicon-on-insulator (SOI) hybrid transistor device structure includes a substrate, a buried insulating layer on the substrate, and a hybrid transistor device structure formed in a semiconductor surface layer on the buried insulating layer. The hybrid transistor device structure may advantageously include at least one MOS transistor structure and at least one conductivity modulation transistor structure electrically connected in parallel. In a particularly advantageous configuration, the MOS transistor structure may be an LDMOS transistor structure and the conductivity modulation transistor structure may be an LIGB transistor structure, with the hybrid transistor device being formed in a closed geometry configuration. This closed geometry configuration may have both substantially curved segments and substantially straight segments, with MOS structures being formed in the curved segments and conductivity modulation transistor structures being formed in the straight segments. Hybrid transistor device structures in accordance with the invention feature excellent operating characteristics in high current, high voltage circuit applications, and in particular in source-follower circuit applications.
摘要翻译：绝缘体上硅（SOI）混合晶体管器件结构包括衬底，衬底上的掩埋绝缘层以及形成在掩埋绝缘层上的半导体表面层中的混合晶体管器件结构。混合晶体管器件结构可以有利地包括至少一个MOS晶体管结构和并联电连接的至少一个导电调制晶体管结构。在特别有利的配置中，MOS晶体管结构可以是LDMOS晶体管结构，并且导电调制晶体管结构可以是LIGB晶体管结构，其中混合晶体管器件形成为封闭的几何结构。这种闭合的几何构型可以具有基本上弯曲的段和基本上直的段，其中MOS结构形成在弯曲段中，并且导电调制晶体管结构形成在直段中。根据本发明的混合晶体管器件结构在高电流，高压电路应用中尤其是源极跟随器电路应用中具有优异的工作特性。

3. 发明申请

US20070080389A1 Dynamic control of capacitance elements in field effect structures 有权
标题翻译：场效应结构中电容元件的动态控制
公开(公告)号：US20070080389A1
公开(公告)日：2007-04-12
申请号：US10572924
申请日：2004-09-21
申请人： John Petruzzello , Theodore Letavic , Benoit Dufort
发明人： John Petruzzello , Theodore Letavic , Benoit Dufort
IPC分类号： H01L29/94
CPC分类号： H01L29/404 , B06B1/0292 , H01L28/82 , H01L29/402 , H01L29/7817 , H01L29/7824
摘要： A field effect device includes at least one segmented field plate, each of the at least one segmented field plates having a plurality of segments that each form a plate of a capacitor, wherein the field effect device is connected to an electronic element that dynamically connects selected segments to selectively set a gate-to-drain and a drain-to-source capacitance. An ultrasonic device includes a transducer coupled to a switching device that switches the transducer between a transmit mode and a receive mode switching device, wherein the switching device includes the field effect device.
摘要翻译：场效应装置包括至少一个分段场板，所述至少一个分段场板中的每一个具有多个段，每个段形成电容器的板，其中所述场效应器件连接到电子元件，所述电子元件动态地连接所选择的以选择性地设置栅极到漏极和漏极到源极的电容。超声波装置包括耦合到切换装置的换能器，其在发射模式和接收模式切换装置之间切换换能器，其中切换装置包括场效应装置。

4. 发明申请

US20070034899A1 Silicon-on-insulator photodiode optical monitoring system for color temperature control in solid state light systems 审中-公开
标题翻译：绝缘体上硅光电二极管光学监控系统，用于固态光系统中的色温控制
公开(公告)号：US20070034899A1
公开(公告)日：2007-02-15
申请号：US10572611
申请日：2004-09-15
申请人： John Petruzzello , Theodore Letavic , Benoit Veillette
发明人： John Petruzzello , Theodore Letavic , Benoit Veillette
IPC分类号： H01L31/00
CPC分类号： G01J1/42 , G01J3/2803 , G01J3/50 , H01L31/022416 , H01L31/035281 , H01L31/103 , Y02E10/50
摘要： A silicon-on-insulator (SOI) photodiode optical monitoring method and system for color temperature control in solid state light systems. The method includes the steps of providing a plurality of SOI photodiodes, wherein each SOI photodiode includes a silicon substrate, a buried oxide layer formed on the silicon substrate, and a silicon layer formed on the buried oxide layer, and wherein the silicon layer of each SOI photodiode has a different thickness, determining a proportion of incident light passing through each SOI photodiode to the silicon substrate with respect to wavelength and the thickness of the silicon layer, and calculating color component intensities of the incident light based on the determined proportions.
摘要翻译：一种绝缘体上硅（SOI）光电二极管光学监测方法和系统，用于固态光系统中的色温控制。该方法包括以下步骤：提供多个SOI光电二极管，其中每个SOI光电二极管包括硅衬底，形成在硅衬底上的掩埋氧化物层和形成在掩埋氧化物层上的硅层，并且其中每个 SOI光电二极管具有不同的厚度，确定相对于硅层的波长和厚度通过每个SOI光电二极管到硅衬底的入射光的比例，以及基于确定的比例计算入射光的颜色分量强度。

5. 发明授权

US07989881B2 Semiconductor device structure with a tapered field plate and cylindrical drift region geometry 有权
标题翻译：具有锥形场板和圆柱漂移区几何形状的半导体器件结构
公开(公告)号：US07989881B2
公开(公告)日：2011-08-02
申请号：US11815861
申请日：2006-02-07
申请人： Theodore Letavic , John Petruzzello
发明人： Theodore Letavic , John Petruzzello
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/407 , H01L29/42368 , H01L29/7397
摘要： A vertically oriented self terminating semiconductor device such as a discrete trench MOS device (10, 38) that includes a cylindrical drift region (18) that extend downward from a surface region to a substrate (11) and a dielectric region (20) that exponentially tapers outward from the cylindrical drift region as the drift region approaches the substrate. A field plate electrode (12) is disposed on the dielectric region. Alternatively, the gate electrode (40, 46) may be disposed on the dielectric region, optionally with an underlying field plate electrode (48).
摘要翻译：垂直定向的自终端半导体器件，例如分立沟槽MOS器件（10,38），其包括从表面区域向下延伸到衬底（11）的圆柱形漂移区域（18），以及电介质区域（20）随着漂移区域接近基板，圆柱形漂移区域向外逐渐变细。场电极（12）设置在电介质区域上。或者，栅电极（40,46）可以设置在电介质区域上，可选地具有下面的场板电极（48）。

6. 发明申请

US20060163654A1 Silicon-on-insulator device 有权
标题翻译：绝缘体上硅器件
公开(公告)号：US20060163654A1
公开(公告)日：2006-07-27
申请号：US10560067
申请日：2004-06-08
申请人： Theodore Letavic , John Petruzzello
发明人： Theodore Letavic , John Petruzzello
IPC分类号： H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L29/7824 , H01L27/1203 , H01L29/0615 , H01L29/063 , H01L29/1095
摘要： A Silicon on Insulator (SOI) device is disclosed wherein an extension of P-type doping (303) is implanted between the buried oxide layer of the device and the SOI layer. The extension is of a size and shape to permit the source (309) to be biased at a voltage significantly less than the handler wafer (304) and drain, a condition under which prior art SOI devices may not properly operate.
摘要翻译：公开了一种绝缘体上硅（SOI）器件，其中P型掺杂（303）的扩展被注入在器件的掩埋氧化物层和SOI层之间。延伸部具有尺寸和形状，以允许源极（309）以比处理器晶片（304）显着更小的电压偏置和漏极，这是现有技术的SOI器件可能无法正常工作的状态。

7. 发明授权

US06833726B2 SOI-LDMOS device with integral voltage sense electrodes 有权
公开(公告)号：US06833726B2
公开(公告)日：2004-12-21
申请号：US10779093
申请日：2004-02-13
申请人： John Petruzzello , Benoit Dufort , Theodore Letavic
发明人： John Petruzzello , Benoit Dufort , Theodore Letavic
IPC分类号： G01R3126
CPC分类号： H01L29/404 , H01L27/1203 , H01L29/42368 , H01L29/7824 , H01L29/7826
摘要： The present invention provides a semiconductor device of the SOI-LDMOS type in which the field plate is divided into a plurality of electrically isolated sub-field plates. At least two of the divided sub-field plates are connected to external circuits for reading their respective output voltages. By connecting a first external circuit and a second external circuit having specific components, one is configured for determining an instantaneous output voltage and the other is configured for determining a change in output voltage as a function of time. Power is disconnected from the semiconductor device if either the instantaneous voltage or the derivative of voltage over time exceeds an established value.

8. 发明授权

US07485916B2 Dynamic control of capacitance elements in field effect structures 有权
标题翻译：场效应结构中电容元件的动态控制
公开(公告)号：US07485916B2
公开(公告)日：2009-02-03
申请号：US10572924
申请日：2004-09-21
申请人： John Petruzzello , Theodore Letavic , Benoit Dufort
发明人： John Petruzzello , Theodore Letavic , Benoit Dufort
IPC分类号： H01L29/94
CPC分类号： H01L29/404 , B06B1/0292 , H01L28/82 , H01L29/402 , H01L29/7817 , H01L29/7824
摘要： A field effect device includes at least one segmented field plate, each of the at least one segmented field plates having a plurality of segments that each form a plate of a capacitor, wherein the field effect device is connected to an electronic element that dynamically connects selected segments to selectively set a gate-to-drain and a drain-to-source capacitance. An ultrasonic device includes a transducer coupled to a switching device that switches the transducer between a transmit mode and a receive mode switching device, wherein the switching device includes the field effect device.
摘要翻译：场效应装置包括至少一个分段场板，所述至少一个分段场板中的每一个具有多个段，每个段形成电容器的板，其中所述场效应器件连接到电子元件，所述电子元件动态地连接所选择的以选择性地设置栅极到漏极和漏极到源极的电容。超声波装置包括耦合到切换装置的换能器，其在发射模式和接收模式切换装置之间切换换能器，其中切换装置包括场效应装置。

9. 发明申请

US20080272428A1 Semiconductor Device Structure With a Tapered Field Plate and Cylindrical Drift Region Geometry 有权
标题翻译：具有锥形场板和圆柱漂移区几何的半导体器件结构
公开(公告)号：US20080272428A1
公开(公告)日：2008-11-06
申请号：US11815861
申请日：2006-02-07
申请人： Theodore Letavic , John Petruzzello
发明人： Theodore Letavic , John Petruzzello
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/407 , H01L29/42368 , H01L29/7397
摘要： A vertically oriented self terminating discrete trench MOS device (1) that includes a cylindrical drift region (18) that extend downward from a surface region to a substrate (11) and a dielectric region (20) that exponentially tapers outward from the cylindrical drift region as the drift region approaches the substrate.
摘要翻译：一种垂直定向的自终端离散沟槽MOS器件（1），其包括从表面区域向下延伸到衬底（11）的圆柱形漂移区域（18）和从所述圆柱形漂移区域向外指数地渐缩的电介质区域随着漂移区域接近衬底。

10. 发明授权

US07968938B2 High-voltage device structure 有权
标题翻译：高压器件结构
公开(公告)号：US07968938B2
公开(公告)日：2011-06-28
申请号：US11629766
申请日：2005-06-10
申请人： Theodore Letavic , John Petruzzello
发明人： Theodore Letavic , John Petruzzello
IPC分类号： H01L29/94
CPC分类号： H01L29/407
摘要： The present invention provides a vertical tapered dielectric high-voltage device (10) in which the device drift region is depicted by action of MOS field plates (30) formed in vertical trenches. The high-voltage device comprises: a substrate (32); a silicon mesa (20) formed on the substrate and having a stripe geometry, wherein the silicon mesa provides a drift region having a constant doping profile; a recessed gate (22) and source (SN) formed on the silicon mesa; a trench (26) adjacent each side of the silicon mesa; and a metal-dielectric field plate structure (12) formed in each trench; wherein each metal-dielectric field plate structure comprises a dielectric (28) and a metal field plate (30) formed over the dielectric, and wherein a thickness of the dielectric increases linearly through a depth of the trench to provide a constant longitudinal electric field.
摘要翻译：本发明提供一种垂直锥形介质高压装置（10），其中通过在垂直沟槽中形成的MOS场板（30）的作用来描绘器件漂移区。高电压装置包括：基板（32）; 形成在所述衬底上并具有条纹几何形状的硅台面（20），其中所述硅台面提供具有恒定掺杂分布的漂移区域; 形成在硅台面上的凹入栅极（22）和源极（SN）; 与硅台面的每一侧相邻的沟槽（26）; 和形成在每个沟槽中的金属 - 电介质场板结构（12）其中每个金属 - 电介质场板结构包括形成在所述电介质上的电介质（28）和金属场板（30），并且其中所述电介质的厚度通过所述沟槽的深度线性增加以提供恒定的纵向电场。

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