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1. 发明申请

US20070080389A1 Dynamic control of capacitance elements in field effect structures 有权
标题翻译：场效应结构中电容元件的动态控制
公开(公告)号：US20070080389A1
公开(公告)日：2007-04-12
申请号：US10572924
申请日：2004-09-21
申请人： John Petruzzello , Theodore Letavic , Benoit Dufort
发明人： John Petruzzello , Theodore Letavic , Benoit Dufort
IPC分类号： H01L29/94
CPC分类号： H01L29/404 , B06B1/0292 , H01L28/82 , H01L29/402 , H01L29/7817 , H01L29/7824
摘要： A field effect device includes at least one segmented field plate, each of the at least one segmented field plates having a plurality of segments that each form a plate of a capacitor, wherein the field effect device is connected to an electronic element that dynamically connects selected segments to selectively set a gate-to-drain and a drain-to-source capacitance. An ultrasonic device includes a transducer coupled to a switching device that switches the transducer between a transmit mode and a receive mode switching device, wherein the switching device includes the field effect device.
摘要翻译：场效应装置包括至少一个分段场板，所述至少一个分段场板中的每一个具有多个段，每个段形成电容器的板，其中所述场效应器件连接到电子元件，所述电子元件动态地连接所选择的以选择性地设置栅极到漏极和漏极到源极的电容。超声波装置包括耦合到切换装置的换能器，其在发射模式和接收模式切换装置之间切换换能器，其中切换装置包括场效应装置。

2. 发明申请

US20070034899A1 Silicon-on-insulator photodiode optical monitoring system for color temperature control in solid state light systems 审中-公开
标题翻译：绝缘体上硅光电二极管光学监控系统，用于固态光系统中的色温控制
公开(公告)号：US20070034899A1
公开(公告)日：2007-02-15
申请号：US10572611
申请日：2004-09-15
申请人： John Petruzzello , Theodore Letavic , Benoit Veillette
发明人： John Petruzzello , Theodore Letavic , Benoit Veillette
IPC分类号： H01L31/00
CPC分类号： G01J1/42 , G01J3/2803 , G01J3/50 , H01L31/022416 , H01L31/035281 , H01L31/103 , Y02E10/50
摘要： A silicon-on-insulator (SOI) photodiode optical monitoring method and system for color temperature control in solid state light systems. The method includes the steps of providing a plurality of SOI photodiodes, wherein each SOI photodiode includes a silicon substrate, a buried oxide layer formed on the silicon substrate, and a silicon layer formed on the buried oxide layer, and wherein the silicon layer of each SOI photodiode has a different thickness, determining a proportion of incident light passing through each SOI photodiode to the silicon substrate with respect to wavelength and the thickness of the silicon layer, and calculating color component intensities of the incident light based on the determined proportions.
摘要翻译：一种绝缘体上硅（SOI）光电二极管光学监测方法和系统，用于固态光系统中的色温控制。该方法包括以下步骤：提供多个SOI光电二极管，其中每个SOI光电二极管包括硅衬底，形成在硅衬底上的掩埋氧化物层和形成在掩埋氧化物层上的硅层，并且其中每个 SOI光电二极管具有不同的厚度，确定相对于硅层的波长和厚度通过每个SOI光电二极管到硅衬底的入射光的比例，以及基于确定的比例计算入射光的颜色分量强度。

3. 发明授权

US5637530A II-VI compound semiconductor epitaxial layers having low defects, method for producing and devices utilizing same 失效
标题翻译：具有低缺陷的II-VI化合物半导体外延层，制造方法和利用它们的装置
公开(公告)号：US5637530A
公开(公告)日：1997-06-10
申请号：US660999
申请日：1996-06-10
申请人： James M. Gaines , John Petruzzello
发明人： James M. Gaines , John Petruzzello
IPC分类号： C30B23/08 , H01L21/36 , H01L21/363 , H01L31/18 , H01L33/00 , H01S5/00
CPC分类号： H01L31/1836 , H01L21/02395 , H01L21/02557 , H01L21/0256 , H01L21/02631 , H01L33/0087 , Y02E10/50
摘要： Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the compound by migration enhanced epitaxy (MEE). Growth of the remainder of the layer by MBE results in much lower defects than if the entire layer had been grown by MBE. Layers are useful in devices such as LEDs and injection lasers.
摘要翻译：通过首先沉积化合物的阳离子种类的单层的一部分，然后通过迁移增强的外延沉积薄层的化合物来生产具有低晶格缺陷（例如堆垛层错）的低发生率的II-VI半导体化合物的外延层 MEE）。 MBE的其余部分的生长导致比通过MBE生长整个层的缺陷要低得多的缺陷。层在诸如LED和注射激光器的器件中是有用的。

4. 发明授权

US5363395A Blue-green injection laser structure utilizing II-VI compounds 失效
标题翻译：采用II-VI化合物的蓝绿色注入激光结构
公开(公告)号：US5363395A
公开(公告)日：1994-11-08
申请号：US159755
申请日：1993-11-30
申请人： James M. Gaines , Ronald R. Drenten , Kevin W. Haberern , Thomas M. Marshall , Piotr M. Mensz , John Petruzzello
发明人： James M. Gaines , Ronald R. Drenten , Kevin W. Haberern , Thomas M. Marshall , Piotr M. Mensz , John Petruzzello
IPC分类号： H01S5/00 , H01S5/20 , H01S5/327 , H01S5/34 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/327 , H01S5/347 , H01S5/2063 , H01S5/3403
摘要： A blue-green II/VI semiconductor injection laser utilizing a Zn.sub.1-u Cd.sub.u Se active layer (quantum well) having Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y cladding layers and ZnS.sub.z Se.sub.1-z guiding layers on a GaAs substrate. These devices are operable in a pulse mode at room temperature.
摘要翻译：利用在GaAs衬底上具有Zn1-xMgxSySe1-y包覆层和ZnSzSe1-z引导层的Zn1-uCduSe有源层（量子阱）的蓝 - 绿II / VI半导体注入激光器。这些装置可在室温下以脉冲模式工作。

5. 发明申请

US20130274607A1 AUTOMATED DOPPLER VELOCIMETRY USING A LOW-COST TRANSDUCER 有权
标题翻译：使用低成本传感器的自动多普勒测速仪
公开(公告)号：US20130274607A1
公开(公告)日：2013-10-17
申请号：US13995569
申请日：2011-12-16
申请人： Ajay Anand , John Petruzzello , Rajendra Singh Sisodia , Lalit Gupta , Pallavi Vajinepalli , Celine Firtion
发明人： Ajay Anand , John Petruzzello , Rajendra Singh Sisodia , Lalit Gupta , Pallavi Vajinepalli , Celine Firtion
IPC分类号： A61B8/08 , A61B8/00 , A61B8/06
CPC分类号： A61B8/5223 , A61B5/489 , A61B8/06 , A61B8/0891 , A61B8/4427 , A61B8/4444 , A61B8/466 , A61B8/467 , A61B8/483 , A61B8/488 , A61B8/54 , A61B8/585
摘要： An automatic, stand-alone, hand-held ultrasound blood-vessel examination device (100) requires a reduced number of transducer elements (126) and presents a simplified user interface (136-140), without the need for displaying an image of any of the vessels. The probe, in one embodiment, acquires and examines a volume of interest (106), searches for a target vessel, tests the vessel for normality of blood flow, and reports the diagnosis, all automatically and without need for user intervention. In another embodiment, the probe finds a body vessel (108-112) in a volume, and extracts a clinical Doppler parameter, all automatically and without need for user intervention.
摘要翻译：自动，独立的手持式超声波血管检查装置（100）需要减少数量的换能器元件（126）并呈现简化的用户界面（136-140），而不需要显示任何的船只。在一个实施例中，探针获取和检查感兴趣的体积（106），搜索目标血管，测试血液的血流正常性并且自动地报告诊断，并且不需要用户干预。在另一个实施例中，探针在体积中找到身体容器（108-112），并自动提取临床多普勒参数，并且不需要用户干预。

6. 发明授权

US08353834B2 Method and apparatus for guidance and application of high intensity focused ultrasound for control of bleeding due to severed limbs 有权
标题翻译：用于指导和应用高强度聚焦超声用于控制由于断肢引起的出血的方法和装置
公开(公告)号：US08353834B2
公开(公告)日：2013-01-15
申请号：US12096716
申请日：2006-12-07
申请人： Helen Routh , John Fraser , John Petruzzello , Shervin Ayati
发明人： Helen Routh , John Fraser , John Petruzzello , Shervin Ayati
IPC分类号： A61B8/00 , A61N7/00
CPC分类号： A61B8/4227 , A61B8/06 , A61B8/4281 , A61B8/4483 , A61N7/02 , A61N2007/0065 , A61N2007/0078 , A61N2007/0095 , A61N2007/027
摘要： An ultrasonic diagnostic and therapy system is described for stopping the bleeding of severely damaged blood vessels or vessels severed in a limb amputation. A cuff is attached to the stump of the severed limb which contains a diagnostic transducer array and a HIFU transducer. The diagnostic transducer surveys the tissue of the severed limb, searching for a Doppler flow signal. When a Doppler flow signal is detected, the range to and coordinates of the sample volume where the flow was detected are determined, as well as the flow velocity. This information is supplied to a HIFU therapy transducer controller, which controls the HIFU transducer to transmit focused ultrasound to the sample volume of the flow locus, the center of the lumen of a blood vessel. The focused ultrasound heats and coagulates blood in the severed vessel to stem the bleeding. Heat dissipation due to the blood flow is reduced by tracking and continuously heating the same bolus of blood as it flows, or by heating a significant length of the blood vessel instead of a fixed spot in the vessel.
摘要翻译：描述了超声诊断和治疗系统，用于阻止严重损伤的血管或肢体截肢切断的血管的出血。一个袖带连接到包含诊断换能器阵列和HIFU换能器的切断肢体的残端。诊断传感器检测切断的肢体的组织，寻找多普勒血流信号。当检测到多普勒流量信号时，确定检测流量的样品体积的范围和坐标以及流速。该信息被提供给HIFU治疗传感器控制器，HIFU治疗传感器控制器控制HIFU换能器将聚焦的超声波传输到血管的管腔中心的流动轨迹的样本体积。聚焦超声加热并凝结切断的血管中的血液以阻止出血。通过跟踪并持续加热相同的血液，当流动时，或通过加热血管的相当长度的血管而不是血管中的固定点来减少由血流引起的散热。

7. 发明授权

US07485916B2 Dynamic control of capacitance elements in field effect structures 有权
标题翻译：场效应结构中电容元件的动态控制
公开(公告)号：US07485916B2
公开(公告)日：2009-02-03
申请号：US10572924
申请日：2004-09-21
申请人： John Petruzzello , Theodore Letavic , Benoit Dufort
发明人： John Petruzzello , Theodore Letavic , Benoit Dufort
IPC分类号： H01L29/94
CPC分类号： H01L29/404 , B06B1/0292 , H01L28/82 , H01L29/402 , H01L29/7817 , H01L29/7824
摘要： A field effect device includes at least one segmented field plate, each of the at least one segmented field plates having a plurality of segments that each form a plate of a capacitor, wherein the field effect device is connected to an electronic element that dynamically connects selected segments to selectively set a gate-to-drain and a drain-to-source capacitance. An ultrasonic device includes a transducer coupled to a switching device that switches the transducer between a transmit mode and a receive mode switching device, wherein the switching device includes the field effect device.
摘要翻译：场效应装置包括至少一个分段场板，所述至少一个分段场板中的每一个具有多个段，每个段形成电容器的板，其中所述场效应器件连接到电子元件，所述电子元件动态地连接所选择的以选择性地设置栅极到漏极和漏极到源极的电容。超声波装置包括耦合到切换装置的换能器，其在发射模式和接收模式切换装置之间切换换能器，其中切换装置包括场效应装置。

8. 发明申请

US20080272428A1 Semiconductor Device Structure With a Tapered Field Plate and Cylindrical Drift Region Geometry 有权
标题翻译：具有锥形场板和圆柱漂移区几何的半导体器件结构
公开(公告)号：US20080272428A1
公开(公告)日：2008-11-06
申请号：US11815861
申请日：2006-02-07
申请人： Theodore Letavic , John Petruzzello
发明人： Theodore Letavic , John Petruzzello
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/407 , H01L29/42368 , H01L29/7397
摘要： A vertically oriented self terminating discrete trench MOS device (1) that includes a cylindrical drift region (18) that extend downward from a surface region to a substrate (11) and a dielectric region (20) that exponentially tapers outward from the cylindrical drift region as the drift region approaches the substrate.
摘要翻译：一种垂直定向的自终端离散沟槽MOS器件（1），其包括从表面区域向下延伸到衬底（11）的圆柱形漂移区域（18）和从所述圆柱形漂移区域向外指数地渐缩的电介质区域随着漂移区域接近衬底。

9. 发明授权

US06468878B1 SOI LDMOS structure with improved switching characteristics 有权
标题翻译： SOI LDMOS结构具有改进的开关特性
公开(公告)号：US06468878B1
公开(公告)日：2002-10-22
申请号：US09794562
申请日：2001-02-27
申请人： John Petruzzello , Theodore James Letavic , Mark Simpson
发明人： John Petruzzello , Theodore James Letavic , Mark Simpson
IPC分类号： H01L2176
CPC分类号： H01L29/402 , H01L29/0847 , H01L29/0852 , H01L29/41758 , H01L29/42368 , H01L29/7394 , H01L29/7824
摘要： An improved method and structure for a transistor device with a lateral drift region and a conducting top field plate is presented. The method consists of decreasing the gate to drain capacitance by means of decreasing the portion of the field plate that is connected to the gate electrode, and hence the effective overlap of the gate with the drift region and drain. This results in decreased energy dissipation in switching the transistor, and more efficient operation. The rate of decrease of the gate to drain capacitance is even faster at higher drain voltages, inuring in significant energy efficiencies in high voltage applications.
摘要翻译：提出了一种具有横向漂移区域和导电顶部场板的晶体管器件的改进方法和结构。该方法包括通过减少连接到栅电极的场板的部分，从而减小栅极与漏极的漏极电容，从而使栅极与漂移区域和漏极的有效重叠。这导致在切换晶体管时能量消耗降低，并且操作更有效。在较高的漏极电压下，栅极到漏极电容的降低速率甚至更快，从而在高电压应用中实现了显着的能量效率。

10. 发明授权

US06191453B1 Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology 有权
标题翻译：绝缘体上硅（SOI）技术中的侧绝缘栅双极晶体管（LIGBT）器件
公开(公告)号：US06191453B1
公开(公告)日：2001-02-20
申请号：US09459628
申请日：1999-12-13
申请人： John Petruzzello , Theodore Letavic , J. Van Zwol
发明人： John Petruzzello , Theodore Letavic , J. Van Zwol
IPC分类号： H01L2976
CPC分类号： H01L29/7394 , H01L29/0696 , H01L29/42368
摘要： A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a Lateral Insulated Gate Bipolar Transistor (LIGBT) device in an SOI layer on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first and a body contact region of the second conductivity type in the body region and connected to the source region. A lateral drift region of a first conductivity type is provided adjacent the body region and forms a lightly-doped drain region, and a drain contact region of the first conductivity type is provided laterally spaced apart from the body region by the drift region with an anode region of the second conductivity type in the drain region and connected to the drain contact region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region adjacent the body region, with the gate electrode being at least substantially insulated from the body region and drift region by a surface insulation region. Improved device performance is achieved by making a dimension of the source region in a direction normal to a direction of current flow between the source region and the drain contact region greater than a corresponding dimension of the drain contact region and of the anode region.
摘要翻译：横向薄膜绝缘体上硅（SOI）器件包括半导体衬底，衬底上的掩埋绝缘层和掩埋绝缘层上的SOI层中的侧绝缘栅双极晶体管（LIGBT）器件，并具有源极第一导电类型的区域形成在体区中与第二导电类型的第一导电类型的本体区域相反的第二导电类型的本体区域中并且连接到源极区域。第一导电类型的横向漂移区域设置在身体区域附近，并形成轻掺杂的漏极区域，并且第一导电类型的漏极接触区域通过漂移区域与体区域横向间隔开，阳极通过阳极区域，并且连接到漏极接触区域。栅极电极设置在主体区域的一部分上，在该区域中，在操作期间形成沟道区域并且延伸超过与身体区域相邻的横向漂移区域的一部分，栅电极至少与身体区域基本绝缘，漂移区域由表面绝缘区域。通过使源区域的尺寸沿垂直于源极区域和漏极接触区域之间的电流方向的方向大于漏极接触区域和阳极区域的对应尺寸来实现，从而实现改进的器件性能。

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