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    • 8. 发明授权
    • Planar avalanche photodiode
    • 平面雪崩光电二极管
    • US07348607B2
    • 2008-03-25
    • US10502110
    • 2003-02-03
    • Cheng C. KoBarry Levine
    • Cheng C. KoBarry Levine
    • H01L29/732
    • H01L31/1075H01L31/035281Y02E10/50
    • The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer, and a p-type contact layer. Further embodiments include a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer and a p-type semiconductor layer electrically coupled to a p-type contact layer.
    • 本发明包括具有限定平面接触面积的第一n型半导体层的平面雪崩光电二极管和具有p型扩散区域的第二n型半导体层。 该结构的其它特征包括n型半导体倍增层,n型半导体吸收层和p型接触层。 另外的实施例包括具有限定平面接触面积的第一n型半导体层的平面雪崩光电二极管,n型半导体倍增层,n型半导体吸收层和与p型电耦合的p型半导体层 接触层。