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1. 发明授权

US5272101A Electrically programmable antifuse and fabrication processes 失效
标题翻译：电可编程反熔丝和制造工艺
公开(公告)号：US5272101A
公开(公告)日：1993-12-21
申请号：US743261
申请日：1991-08-09
申请人： Abdul R. Forouhi , Esmat Z. Hamdy , Chenming Hu , John L. McCollum
发明人： Abdul R. Forouhi , Esmat Z. Hamdy , Chenming Hu , John L. McCollum
IPC分类号： H01L23/525 , H01L23/532 , H01L21/44 , H01L21/265
CPC分类号： H01L23/5252 , H01L23/53223 , H01L2924/0002 , H01L2924/3011
摘要： A process for fabricating a metal-to-metal antifuse in a process sequence for forming a double layer metal interconnect structure includes the steps of forming and defining a first metal interconnect layer, forming and planarizing an inter-metal dielectric layer, forming an antifuse cell opening in the inter-metal dielectric layer, forming and defining an antifuse layer, forming metal-to-metal via holes in the inter-metal dielectric layer, and forming and defining a second metal interconnect layer.
摘要翻译：在用于形成双层金属互连结构的工艺顺序中制造金属对金属反熔丝的方法包括以下步骤：形成和限定第一金属互连层，形成和平坦化金属间介电层，形成反熔丝电池在所述金属间介电层中开口，形成并限定反熔丝层，在所述金属间介电层中形成金属对金属的通孔，以及形成和限定第二金属互连层。

2. 发明授权

US5763898A Above via metal-to-metal antifuses incorporating a tungsten via plug 失效
标题翻译：以上通过金属对金属反熔丝结合钨通孔
公开(公告)号：US5763898A
公开(公告)日：1998-06-09
申请号：US726347
申请日：1996-10-03
申请人： Abdul R. Forouhi , Frank W. Hawley , John L. McCollum , Yeouchung Yen
发明人： Abdul R. Forouhi , Frank W. Hawley , John L. McCollum , Yeouchung Yen
IPC分类号： H01L21/768 , H01L23/525 , H01L23/532 , H01L29/38
CPC分类号： H01L23/5252 , H01L21/76888 , H01L23/53223 , H01L2924/0002
摘要： According to a first aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer under a plug of an electrically conductive material disposed between two metallization layers. According to a second aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer comprising a first nitride/first amorphous silicon/second nitride/second amorphous silicon sandwich under a plug of an electrically conductive material lined with titanium disposed between two metallization layers. In this aspect of the invention the titanium is allowed to react with the second amorphous silicon layer to form an electrically conductive silicide. This leaves the first nitride/first amorphous silicon/second nitride as the antifuse material layer while guaranteeing a strict control on the thickness of the antifuse material layer for assuring strict control over its respective breakdown or programming voltage. According to a third aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer disposed over a plug of an electrically conductive material disposed between two metallization layers.
摘要翻译：根据本发明的第一方面，能够进行高密度制造的反熔丝结构包括设置在两个金属化层之间的导电材料的插头下方的反熔丝材料层。根据本发明的第二方面，能够进行高密度制造的反熔丝结构包括反熔丝材料层，该反熔丝材料层包括第一氮化物/第一非晶硅/第二氮化物/第二非晶硅夹层，所述第一氮化物/第一非晶硅/第二氮化物/ 在两个金属化层之间。在本发明的这个方面，允许钛与第二非晶硅层反应形成导电硅化物。这使得第一氮化物/第一非晶硅/第二氮化物作为反熔丝材料层，同时保证对反熔丝材料层的厚度的严格控制，以确保严格控制其各自的击穿或编程电压。根据本发明的第三方面，能够进行高密度制造的反熔丝结构包括设置在设置在两个金属化层之间的导电材料的插塞之上的反熔丝材料层。

3. 发明授权

US5482884A Low-temperature process metal-to-metal antifuse employing silicon link 失效
标题翻译：采用硅链接的低温工艺金属对金属反熔丝
公开(公告)号：US5482884A
公开(公告)日：1996-01-09
申请号：US287724
申请日：1994-08-09
申请人： John L. McCollum , Abdul R. Forouhi
发明人： John L. McCollum , Abdul R. Forouhi
IPC分类号： H01L23/525 , H01L21/70
CPC分类号： H01L23/5252 , H01L2924/0002 , Y10S148/055
摘要： A process for fabricating the metal-to-metal antifuse of the present invention includes the steps of forming a first metal layer on a semiconductor or other microcircuit structure; forming a first barrier layer over the first metal layer; forming a thick insulating layer over the barrier layer; forming an antifuse aperture in the thick insulating layer; forming a first heavily doped amorphous silicon layer in the aperture over the first barrier layer; forming a dielectric antifuse material layer over the first amorphous silicon layer; forming a second heavily doped amorphous silicon layer over the first dielectric antifuse material layer; forming a second barrier layer over the second amorphous silicon layer; and forming a second metal layer over the second barrier layer.
摘要翻译：本发明的金属 - 金属反熔丝的制造方法包括在半导体或其他微电路结构上形成第一金属层的步骤; 在所述第一金属层上形成第一阻挡层; 在阻挡层上形成厚的绝缘层; 在厚绝缘层中形成反熔丝孔; 在所述第一阻挡层上的所述孔中形成第一重掺杂非晶硅层; 在所述第一非晶硅层上形成绝缘反熔丝材料层; 在所述第一介电反熔丝材料层上形成第二重掺杂非晶硅层; 在所述第二非晶硅层上形成第二阻挡层; 以及在所述第二阻挡层上形成第二金属层。

4. 发明授权

US5387812A Electrically programmable antifuse having a metal to metal structure 失效
标题翻译：具有金属对金属结构的电可编程反熔丝
公开(公告)号：US5387812A
公开(公告)日：1995-02-07
申请号：US947275
申请日：1992-09-18
申请人： Abdul R. Forouhi , Esmat Z. Hamdy , Chenming Hu , John L. McCollum
发明人： Abdul R. Forouhi , Esmat Z. Hamdy , Chenming Hu , John L. McCollum
IPC分类号： H01L23/525 , H01L23/532 , H01L23/48 , H03K19/177 , H01L29/46 , H01L29/54
CPC分类号： H01L23/5252 , H01L23/53223 , H01L2924/0002 , H01L2924/3011
摘要： A metal-to metal antifuse device is provided in a double layer metal interconnect structure. A lower electrode comprises a first multilayer metal layer interconnect disposed on an insulator. An inter-metal dielectric is disposed on the first metal layer interconnect having an antifuse via. An antifuse material layer is disposed in the antifuse via and having an upper electrode comprising a second multilayer metal layer interconnect.
摘要翻译：金属对金属反熔丝装置设置在双层金属互连结构中。下电极包括设置在绝缘体上的第一多层金属层互连。在具有反熔丝通孔的第一金属层互连上设置金属间电介质。反熔丝材料层设置在反熔丝通孔中并具有包括第二多层金属层互连的上电极。

5. 发明授权

US5614756A Metal-to-metal antifuse with conductive 失效
标题翻译：金属对金属反熔丝导电
公开(公告)号：US5614756A
公开(公告)日：1997-03-25
申请号：US284054
申请日：1994-08-01
申请人： Abdul R. Forouhi , Frank W. Hawley , John L. McCollum , Yeouchung Yen
发明人： Abdul R. Forouhi , Frank W. Hawley , John L. McCollum , Yeouchung Yen
IPC分类号： H01L21/768 , H01L23/525 , H01L23/532 , H01L29/00
CPC分类号： H01L23/5252 , H01L21/76888 , H01L23/53223 , H01L2924/0002
摘要： According to a first aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer under a plug of an electrically conductive material disposed between two metallization layers, According to a second aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer comprising a first nitride/first amorphous silicon/second nitride/second amorphous silicon sandwich under a plug of an electrically conductive material lined with titanium disposed between two metallization layers. In this aspect of the invention the titanium is allowed to react with the second amorphous silicon layer to form an electrically conductive silicide. This leaves the first nitride/first amorphous silicon/second nitride as the antifuse material layer while guaranteeing a strict control on the thickness of the antifuse material layer for assuring strict control over its respective breakdown or programming voltage. According to a third aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer disposed over a plug of an electrically conductive material disposed between two metallization layers.
摘要翻译：根据本发明的第一方面，能够进行高密度制造的反熔丝结构包括设置在两个金属化层之间的导电材料的插塞下方的反熔丝材料层。根据本发明的第二方面，提供一种反熔丝结构，高密度制造包括反熔丝材料层，该反熔丝材料层包括第一氮化物/第一非晶硅/第二氮化物/第二非晶硅夹层，所述第一氮化物/第一非晶硅/第二氮化物/第二非晶硅夹层在布置在两个金属化层之间的配有钛的导电材料的插塞下方。在本发明的这个方面，允许钛与第二非晶硅层反应形成导电硅化物。这使得第一氮化物/第一非晶硅/第二氮化物作为反熔丝材料层，同时保证对反熔丝材料层的厚度的严格控制，以确保严格控制其各自的击穿或编程电压。根据本发明的第三方面，能够进行高密度制造的反熔丝结构包括设置在设置在两个金属化层之间的导电材料的插塞之上的反熔丝材料层。

6. 发明授权

US5552627A Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers 失效
标题翻译：电可编程反熔丝，包含电介质和非晶硅夹层
公开(公告)号：US5552627A
公开(公告)日：1996-09-03
申请号：US231634
申请日：1994-04-22
申请人： John L. McCollum , Abdelshafy A. Eltoukhy , Abdul R. Forouhi
发明人： John L. McCollum , Abdelshafy A. Eltoukhy , Abdul R. Forouhi
IPC分类号： H01L21/768 , H01L23/525 , H01L23/532 , H01L29/00
CPC分类号： H01L21/76888 , H01L23/5252 , H01L23/53223 , H01L2924/0002 , H01L2924/3011
摘要： An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first metal electrode, a first antifuse dielectric layer, preferably silicon nitride, disposed on the lower first electrode and an antifuse layer, preferably amorphous silicon, disposed on the first dielectric layer. An inter-layer dielectric layer is disposed on the antifuse layer and includes an antifuse via formed completely therethrough. A second antifuse dielectric layer, preferably silicon nitride, is disposed over the amorphous silicon layer in the antifuse via, and an upper second metal electrode is disposed over the second dielectric layer in the antifuse via.
摘要翻译：反熔丝可以被制造为集成电路的一部分，位于位于半导体衬底上方并与半导体衬底绝缘的层中。反熔丝包括下部第一金属电极，设置在下部第一电极上的第一反熔丝电介质层，优选为氮化硅，以及设置在第一介电层上的反熔丝层，优选非晶硅。层间电介质层设置在反熔丝层上，并且包括完全通过其形成的反熔丝通孔。第二反熔丝电介质层，优选氮化硅，设置在反熔丝通孔中的非晶硅层上方，并且上部第二金属电极设置在反熔丝通孔中的第二电介质层上。

7. 发明授权

US5373169A Low-temperature process metal-to-metal antifuse employing silicon link 失效
标题翻译：采用硅链接的低温工艺金属对金属反熔丝
公开(公告)号：US5373169A
公开(公告)日：1994-12-13
申请号：US992055
申请日：1992-12-17
申请人： John L. McCollum , Abdul R. Forouhi
发明人： John L. McCollum , Abdul R. Forouhi
IPC分类号： H01L23/525 , H01L27/02 , H01L29/46
CPC分类号： H01L23/5252 , H01L2924/0002 , Y10S148/055
摘要： A metal-to-metal antifuse includes a lower electrode formed from a first metal layer in a semiconductor or other microcircuit structure. A barrier layer is disposed over the first metal layer. A first heavily-doped amorphous silicon layer is disposed over the barrier layer. A thin dielectric antifuse material is disposed over the first amorphous silicon layer. This dielectric can be nearly any dielectric such as nitride or oxide or a combination of these materials such as ONO and should have a breakdown voltage suitable for programming inside the integrated circuit. A second heavily-doped amorphous silicon layer is disposed over the dielectric layer. An upper electrode, comprising a second metal layer including an underlying barrier layer, is disposed over the second amorphous silicon layer. The first and second metal layers may comprise metal interconnect layers in the circuit structure.
摘要翻译：金属对金属反熔丝包括由半导体或其他微电路结构中的第一金属层形成的下电极。阻挡层设置在第一金属层上。第一重掺杂非晶硅层设置在阻挡层上。薄的绝缘反熔丝材料设置在第一非晶硅层之上。该电介质可以是几乎任何电介质，例如氮化物或氧化物，或这些材料的组合，例如ONO，并且应该具有适于在集成电路内编程的击穿电压。第二重掺杂非晶硅层设置在电介质层上。包括第二金属层的上电极，包括下面的阻挡层，设置在第二非晶硅层上。第一和第二金属层可以包括电路结构中的金属互连层。

8. 发明授权

US5780323A Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug 失效
标题翻译：金属 - 金属抗反熔丝的制造方法，其结合钨通孔
公开(公告)号：US5780323A
公开(公告)日：1998-07-14
申请号：US758281
申请日：1996-11-12
申请人： Abdul R. Forouhi , Frank W. Hawley , John L. McCollum , Yeouchung Yen
发明人： Abdul R. Forouhi , Frank W. Hawley , John L. McCollum , Yeouchung Yen
IPC分类号： H01L21/768 , H01L23/525 , H01L21/82
CPC分类号： H01L23/5252 , H01L21/76888 , H01L2924/0002
摘要： According to a first aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer under a plug of an electrically conductive material disposed between two metallization layers. According to a second aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer comprising a first nitride/first amorphous silicon/second nitride/second amorphous silicon sandwich under a plug of an electrically conductive material lined with titanium disposed between two metallization layers. In this aspect of the invention the titanium is allowed to react with the second amorphous silicon layer to form an electrically conductive silicide. This leaves the first nitride/first amorphous silicon/second nitride as the antifuse material layer while guaranteeing a strict control on the thickness of the antifuse material layer for assuring strict control over its respective breakdown or programming voltage. According to a third aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer disposed over a plug of an electrically conductive material disposed between two metallization layers.
摘要翻译：根据本发明的第一方面，能够进行高密度制造的反熔丝结构包括设置在两个金属化层之间的导电材料的插头下方的反熔丝材料层。根据本发明的第二方面，能够进行高密度制造的反熔丝结构包括反熔丝材料层，该反熔丝材料层包含第一氮化物/第一非晶硅/第二氮化物/第二非晶硅夹层，所述第一氮化物/第一非晶硅/第二氮化物/ 在两个金属化层之间。在本发明的这个方面，允许钛与第二非晶硅层反应形成导电硅化物。这使得第一氮化物/第一非晶硅/第二氮化物作为反熔丝材料层，同时保证对反熔丝材料层的厚度的严格控制，以确保严格控制其各自的击穿或编程电压。根据本发明的第三方面，能够进行高密度制造的反熔丝结构包括设置在设置在两个金属化层之间的导电材料的插塞之上的反熔丝材料层。

9. 发明授权

US5411917A Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayer 失效
标题翻译：电可编程反熔丝结合电介质和非晶硅中间层
公开(公告)号：US5411917A
公开(公告)日：1995-05-02
申请号：US4912
申请日：1993-01-19
申请人： Abdul R. Forouhi , John L. McCollum , Shih-Oh Chen
发明人： Abdul R. Forouhi , John L. McCollum , Shih-Oh Chen
IPC分类号： H01L27/10 , H01L21/82 , H01L21/822 , H01L21/8247 , H01L23/525 , H01L23/532 , H01L27/04 , H01L27/115 , H01L21/44
CPC分类号： H01L23/5252 , H01L23/53223 , H01L2924/0002 , H01L2924/3011 , Y10S148/055
摘要： An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first electrode, a first dielectric layer disposed over the lower first electrode, a layer of amorphous silicon disposed above the first dielectric layer, a second dielectric layer disposed above the amorphous silicon layer, and an upper second electrode disposed above the second dielectric layer.
摘要翻译：反熔丝可以被制造为集成电路的一部分，位于位于半导体衬底上方并与半导体衬底绝缘的层中。反熔丝包括下部第一电极，设置在下部第一电极上的第一电介质层，设置在第一电介质层上方的非晶硅层，设置在非晶硅层上方的第二电介质层，以及设置在第一电极上方的上部第二电极第二电介质层。

10. 发明授权

US07358589B1 Amorphous carbon metal-to-metal antifuse with adhesion promoting layers 失效
标题翻译：无定形碳金属对金属反熔丝具有粘附促进层
公开(公告)号：US07358589B1
公开(公告)日：2008-04-15
申请号：US11210492
申请日：2005-08-23
申请人： Frank W. Hawley , A. Farid Issaq , John L. McCollum , Shubhra M. Gangopadhyay , Jorge A. Lubguban , Jin Miao Shen
发明人： Frank W. Hawley , A. Farid Issaq , John L. McCollum , Shubhra M. Gangopadhyay , Jorge A. Lubguban , Jin Miao Shen
IPC分类号： H01L29/00
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011 , Y10S257/903 , H01L2924/00
摘要： A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCy and SixNy. The ratio of x to y in SixCy is in a range of about 1+/−0.4, and the ratio of x to y in SixNy is in a range of about 0.75+/−0.225.
摘要翻译：具有下金属电极的金属对金属反熔丝，设置在下金属电极上的下薄增粘层，设置在薄粘附促进层上的无定形碳反应熔剂层，设置在所述反熔丝之上的上薄增粘层材料层和上部金属电极。薄粘附促进层的厚度约为2埃至20埃，并且来自选自包含Si x Si x Si和Si x的组的材料， / SUB> Y 。 Si x x Y y中的x与y的比率在约1 +/- 0.4的范围内，并且Si x N 在约0.75 +/- 0.225的范围内。

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