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1. 发明授权

US5272101A Electrically programmable antifuse and fabrication processes 失效
标题翻译：电可编程反熔丝和制造工艺
公开(公告)号：US5272101A
公开(公告)日：1993-12-21
申请号：US743261
申请日：1991-08-09
申请人： Abdul R. Forouhi , Esmat Z. Hamdy , Chenming Hu , John L. McCollum
发明人： Abdul R. Forouhi , Esmat Z. Hamdy , Chenming Hu , John L. McCollum
IPC分类号： H01L23/525 , H01L23/532 , H01L21/44 , H01L21/265
CPC分类号： H01L23/5252 , H01L23/53223 , H01L2924/0002 , H01L2924/3011
摘要： A process for fabricating a metal-to-metal antifuse in a process sequence for forming a double layer metal interconnect structure includes the steps of forming and defining a first metal interconnect layer, forming and planarizing an inter-metal dielectric layer, forming an antifuse cell opening in the inter-metal dielectric layer, forming and defining an antifuse layer, forming metal-to-metal via holes in the inter-metal dielectric layer, and forming and defining a second metal interconnect layer.
摘要翻译：在用于形成双层金属互连结构的工艺顺序中制造金属对金属反熔丝的方法包括以下步骤：形成和限定第一金属互连层，形成和平坦化金属间介电层，形成反熔丝电池在所述金属间介电层中开口，形成并限定反熔丝层，在所述金属间介电层中形成金属对金属的通孔，以及形成和限定第二金属互连层。

2. 发明授权

US5387812A Electrically programmable antifuse having a metal to metal structure 失效
标题翻译：具有金属对金属结构的电可编程反熔丝
公开(公告)号：US5387812A
公开(公告)日：1995-02-07
申请号：US947275
申请日：1992-09-18
申请人： Abdul R. Forouhi , Esmat Z. Hamdy , Chenming Hu , John L. McCollum
发明人： Abdul R. Forouhi , Esmat Z. Hamdy , Chenming Hu , John L. McCollum
IPC分类号： H01L23/525 , H01L23/532 , H01L23/48 , H03K19/177 , H01L29/46 , H01L29/54
CPC分类号： H01L23/5252 , H01L23/53223 , H01L2924/0002 , H01L2924/3011
摘要： A metal-to metal antifuse device is provided in a double layer metal interconnect structure. A lower electrode comprises a first multilayer metal layer interconnect disposed on an insulator. An inter-metal dielectric is disposed on the first metal layer interconnect having an antifuse via. An antifuse material layer is disposed in the antifuse via and having an upper electrode comprising a second multilayer metal layer interconnect.
摘要翻译：金属对金属反熔丝装置设置在双层金属互连结构中。下电极包括设置在绝缘体上的第一多层金属层互连。在具有反熔丝通孔的第一金属层互连上设置金属间电介质。反熔丝材料层设置在反熔丝通孔中并具有包括第二多层金属层互连的上电极。

3. 发明授权

US5670818A Electrically programmable antifuse 失效
标题翻译：电可编程反熔丝
公开(公告)号：US5670818A
公开(公告)日：1997-09-23
申请号：US291422
申请日：1994-08-16
申请人： Abdul Rahim Forouhi , Esmat Z. Hamdy , Chenming Hu , John L. McCollum
发明人： Abdul Rahim Forouhi , Esmat Z. Hamdy , Chenming Hu , John L. McCollum
IPC分类号： H01L23/525 , H01L23/532 , H01L29/00
CPC分类号： H01L23/5252 , H01L23/53223 , H01L2924/0002 , H01L2924/3011
摘要： In an antifuse and metal interconnect structure in an integrated circuit a substrate has an insulating layer disposed on an upper surface, a first multilayer metal interconnect layer disposed on the insulating layer, and having a first portion forming a lower antifuse electrode and a second portion forming a lower metal interconnect electrode wherein the first portion includes an upper barrier metal layer. An inter-metal dielectric layer is disposed on the lower antifuse and metal interconnect electrodes wherein the inter-metal dielectric layer includes an antifuse via formed therethrough and communicating with said lower antifuse electrode, and a metal interconnect via former therethrough communicating with the lower metal interconnect electrode, An antifuse material layer is disposed in the antifuse via, and a second multilayer metal interconnect layer is disposed on the antifuse material layer and in the upper metal interconnect electrode via and on the lower metal interconnect electrode.
摘要翻译：在集成电路中的反熔丝和金属互连结构中，衬底具有设置在上表面上的绝缘层，设置在绝缘层上的第一多层金属互连层，并且具有形成下部反熔丝的第一部分和形成第二部分的第二部分下部金属互连电极，其中第一部分包括上部阻挡金属层。金属间介电层设置在下部反熔丝和金属互连电极上，其中金属间绝缘层包括通过其形成并与所述下部反熔丝电极连通的反熔丝通孔，以及与下部金属互连连接的金属互连通孔电极，反熔丝通孔中设置反熔丝材料层，第二多层金属配线层通过下金属配线电极配置在反熔丝材料层和上金属配线电极上。

4. 发明授权

US4876220A Method of making programmable low impedance interconnect diode element 失效
标题翻译：制造可编程低阻抗互连二极管元件的方法
公开(公告)号：US4876220A
公开(公告)日：1989-10-24
申请号：US104404
申请日：1987-11-13
申请人： Amr M. Mohsen , Esmat Z. Hamdy , John L. McCollum
发明人： Amr M. Mohsen , Esmat Z. Hamdy , John L. McCollum
IPC分类号： H01L21/768 , H01L23/525
CPC分类号： H01L23/5252 , H01L21/76886 , H01L2924/0002 , H01L2924/3011
摘要： A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, covered by a layer of semiconductor material of a second conductivity type.A programmable read only memory array and a programmable logic array comprising a plurality of the above-described cells are also disclosed.
摘要翻译：公开了一种可编程的低阻抗互连二极管元件，其具有由绝缘介电层覆盖的第一导电类型的半导体材料形成的下电极，该绝缘介电层可以在优选实施例中包括二氧化硅的初始层，第二层硅氮化物和由第二导电类型的半导体材料层覆盖的第三层二氧化硅。还公开了一种可编程只读存储器阵列和包括多个上述单元的可编程逻辑阵列。

5. 发明授权

US4881114A Selectively formable vertical diode circuit element 失效
标题翻译：可选择的立式二极管电路元件
公开(公告)号：US4881114A
公开(公告)日：1989-11-14
申请号：US864038
申请日：1986-05-16
申请人： Amr M. Mohsen , Esmat Z. Hamdy , John L. McCollum
发明人： Amr M. Mohsen , Esmat Z. Hamdy , John L. McCollum
IPC分类号： H01L21/768 , H01L23/525
CPC分类号： H01L23/5252 , H01L21/76886 , H01L2924/0002 , H01L2924/3011 , Y10S257/91 , Y10S257/926
摘要： A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, covered by a layer of semiconductor material of a second conductivity type.A programmable read only memory array and a programmable logic array comprising a plurality of the above-described cells are also disclosed.
摘要翻译：公开了一种可编程的低阻抗互连二极管元件，其具有由绝缘介电层覆盖的第一导电类型的半导体材料形成的下电极，该绝缘介电层可以在优选实施例中包括二氧化硅的初始层，第二层硅氮化物和由第二导电类型的半导体材料层覆盖的第三层二氧化硅。还公开了一种可编程只读存储器阵列和包括多个上述单元的可编程逻辑阵列。

6. 发明授权

US5412244A Electrically-programmable low-impedance anti-fuse element 失效
标题翻译：电子可编程低阻抗保险丝元件
公开(公告)号：US5412244A
公开(公告)日：1995-05-02
申请号：US54612
申请日：1993-04-29
申请人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCollum , Shih-Ou Chen , Steve S. Chiang
发明人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCollum , Shih-Ou Chen , Steve S. Chiang
IPC分类号： H01L23/525 , H01L29/46 , H01L29/86 , H01L29/92
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： Electrically-programmable low-impedance antifuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The antifuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a semiconductor substrate or may be formed from a semiconductor material, such as polysilicon, located above and insulated from the substrate. A dielectric layer is disposed over the first electrode. A second electrode is formed over the dielectric layer from a semiconductor material such as polysilicon, or metal having a barrier metal underneath. At least one of the two electrodes of each antifuse is highly-doped or implanted with arsenic such that high concentrations of arsenic exist at the interface between the electrode and the dielectric layer.
摘要翻译：公开了电可编程低阻抗反熔丝，其具有在编程之前具有非常低的泄漏并且在编程之后具有低电阻的电容器状结构。本发明的反熔丝包括可以在半导体衬底中形成为扩散区域的第一导电电极，或者可以由位于衬底上方并与衬底绝缘的半导体材料（例如多晶硅）形成。电介质层设置在第一电极上。第二电极由诸如多晶硅的半导体材料或在其下方具有阻挡金属的金属在电介质层上形成。每个反熔丝的两个电极中的至少一个被高掺杂或注入砷，使得高浓度的砷存在于电极和电介质层之间的界面处。

7. 发明授权

US5266829A Electrically-programmable low-impedance anti-fuse element 失效
标题翻译：电子可编程低阻抗保险丝元件
公开(公告)号：US5266829A
公开(公告)日：1993-11-30
申请号：US910422
申请日：1992-07-08
申请人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCullum , Shih-Ou Chen , Steve S. Chiang
发明人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCullum , Shih-Ou Chen , Steve S. Chiang
IPC分类号： H01L23/525 , H01L27/06 , H01L27/08
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance antifuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a semiconductor substrate or may be formed from a semiconductor material, such as polysilicon, located above and insulated from the substrate. A dielectric layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, is disposed over the first electrode. A second electrode is formed over the dielectric layer from a semiconductor material such as polysilicon, or a metal having a barrier metal underneath. At least one of the two electrodes of each anti-fuse is highly-doped or implanted with arsenic such that high concentrations of arsenic exist at the interface between the electrode and the dielectric layer. This arsenic will combine with other material and flow into the anti-fuse filament after programmed to form a low resistance controllable anti-fuse link. Circuitry is provided which allows the anti-fuse of the present invention to be programmed by application of a suitable programming voltage to input-output pins of the integrated circuit containing the antifuse. Where more than one anti-fuse is to be programmed using the programming voltage applied at the input-output terminals, other additional input-output terminals may serve as address inputs to specify the anti-fuse to be programmed.
摘要翻译：公开了电可编程的低阻抗抗熔丝，其具有电容器状结构，在编程之前具有非常低的泄漏并且在编程之后具有低电阻。本发明的电可编程低阻抗反熔丝包括可以形成为半导体衬底中的扩散区域的第一导电电极，或者可以由位于衬底上方并与衬底绝缘的半导体材料（例如多晶硅）形成。在优选实施例中，介电层包括第一层二氧化硅，第二层氮化硅和第三层二氧化硅，设置在第一电极上。第二电极由诸如多晶硅的半导体材料或在其下方具有阻挡金属的金属在电介质层上形成。每个反熔丝的两个电极中的至少一个被高度掺杂或注入砷，使得高浓度的砷存在于电极和电介质层之间的界面处。这种砷将与其他材料结合并经编程后流入反熔丝，以形成低电阻可控的反熔丝链。提供电路，其允许通过对包含反熔丝的集成电路的输入输出引脚施加合适的编程电压来编程本发明的反熔丝。在使用输入 - 输出端子上施加的编程电压对多个反熔丝进行编程的情况下，其他附加输入 - 输出端可用作地址输入，以指定要编程的反熔丝。

8. 发明授权

US5130777A Apparatus for improving antifuse programming yield and reducing antifuse programming time 失效
标题翻译：改进抗体编程和减少抗体编程时间的设备
公开(公告)号：US5130777A
公开(公告)日：1992-07-14
申请号：US638517
申请日：1991-01-04
申请人： Douglas C. Galbraith , Steve S. Chiang , Abdelshafy A. Eltoukhy , Esmat Z. Hamdy
发明人： Douglas C. Galbraith , Steve S. Chiang , Abdelshafy A. Eltoukhy , Esmat Z. Hamdy
IPC分类号： G11C17/14 , G11C17/16 , H01L21/82 , H01L23/525
CPC分类号： G11C17/16 , H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： The present invention includes four approaches to reduce the unintended programming of antifuses while programming selected antifuses and to decrease the programming time. The first approach includes circuitry to maintain the voltage placed on unselected antifuses at a constant level by use of a voltage source. According to the second approach, a resistor is included in series with the voltage source. According to the third approach, a diode is included in series with the voltage source. According to the fourth approach, a MOS implementation of a diode is included in series with the voltage source.

9. 发明授权

US4899205A Electrically-programmable low-impedance anti-fuse element 失效
标题翻译：电子可编程低阻抗保险丝元件
公开(公告)号：US4899205A
公开(公告)日：1990-02-06
申请号：US137935
申请日：1987-12-28
申请人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCullum
发明人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCullum
IPC分类号： G11C17/14 , G11C16/04 , G11C17/00 , H01L21/82 , H01L21/822 , H01L21/8247 , H01L23/525 , H01L27/04 , H01L27/10 , H01L27/112 , H01L27/115
CPC分类号： H01L27/112 , H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance anti-fuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a semiconductor substrate or may be formed from a semiconductor material, such as polysilicon, located above and insulated from the substrate. A dielectric layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, is disposed over the first electrode. A second electrode is formed over the dielectric layer from a semiconductor material such as polysilicon, or a metal having a barrier metal underneath. At least one of the two electrodes of each anti-fuse is highly-doped or implanted with arsenic such that high concentrations of arsenic exist at the interface between the electrode and the dielectric layer. This arsenic will combine with other material and flow into the anti-fuse filament after programmed to form a low resistance controllable anti-fuse link. Circuitry is provided which allows the anti-fuse of the present invention to be programmed by application of a suitable programming voltage to input-output pins of the integrated circuit containing the anti-fuse. Where more than one anti-fuse is to be programmed using the programming voltage applied at the input-output terminals, other additional input-output terminals may serve as address inputs to specify the anti-fuse to be programmed.In another embodiment of the present invention a programmable read-only memory array comprised of memory cells including an anti-fuse in combination with a single transistor. X-address and Y-address decoder circuits are provided to both program and read the contents of any selected memory cell in the array.
摘要翻译：公开了电可编程的低阻抗抗熔丝，其具有电容器状结构，在编程之前具有非常低的泄漏并且在编程之后具有低电阻。本发明的电气可编程低阻抗熔断器包括第一导电电极，其可以形成为半导体衬底中的扩散区域，或者可以由诸如多晶硅的半导体材料形成，位于上部并与之绝缘的半导体材料基质。在优选实施例中，介电层包括第一层二氧化硅，第二层氮化硅和第三层二氧化硅，设置在第一电极上。第二电极由诸如多晶硅的半导体材料或在其下方具有阻挡金属的金属在电介质层上形成。每个反熔丝的两个电极中的至少一个被高度掺杂或注入砷，使得高浓度的砷存在于电极和电介质层之间的界面处。这种砷将与其他材料结合并经编程后流入反熔丝，以形成低电阻可控的反熔丝链。提供电路，其允许通过向包含反熔丝的集成电路的输入输出引脚施加合适的编程电压来编程本发明的反熔丝。在使用输入 - 输出端子上施加的编程电压对多个反熔丝进行编程的情况下，其他附加输入 - 输出端可用作地址输入，以指定要编程的反熔丝。在本发明的另一个实施例中，可编程只读存储器阵列由包括与单个晶体管组合的反熔丝的存储单元组成。提供X地址和Y地址解码器电路来编程和读取阵列中任何选定存储单元的内容。

10. 发明授权

US5299150A Circuit for preventing false programming of anti-fuse elements 失效
标题翻译：用于防止反熔丝元件错误编程的电路
公开(公告)号：US5299150A
公开(公告)日：1994-03-29
申请号：US295403
申请日：1989-01-10
申请人： Douglas C. Galbraith , Michael G. Ahrens , Esmat Z. Hamdy , Abdelshafy A. Eltoukhy
发明人： Douglas C. Galbraith , Michael G. Ahrens , Esmat Z. Hamdy , Abdelshafy A. Eltoukhy
IPC分类号： G11C17/16 , H01L23/525 , H03K19/177 , G06F7/38 , H01L27/02 , H03K19/173
CPC分类号： H03K19/1776 , G11C17/16 , H03K19/17704 , H03K19/17764 , H03K19/1778 , H01L23/5252 , H01L2924/0002
摘要： A circuit for preventing false programming of unselected anti-fuses in an anti-fuse array includes a series impedance including a plurality of transistors which may be used for partial address selection connected between a source of programming voltage and a bit line.
摘要翻译：用于防止反熔丝阵列中未选择的抗熔丝的假编程的电路包括串联阻抗，其包括多个晶体管，其可用于连接在编程电压源和位线之间的部分地址选择。

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