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    • 5. 发明授权
    • Nondestructive determination of plasma processing treatment
characteristics
    • 无损检测等离子体处理处理特性
    • US5455061A
    • 1995-10-03
    • US372793
    • 1994-12-23
    • Jesse N. MatossianJohn J. Vajo
    • Jesse N. MatossianJohn J. Vajo
    • G01N21/59C23C14/00C23C14/22C23C14/48C23C14/54G01N27/04B05D3/06C23C2/00
    • C23C14/54C23C14/22C23C14/48
    • Plasma processing treatment characteristics of an object are determined nondestructively, prior to plasma processing the object, by placing an indicator layer over at least a portion of the plasma processing surface of the object, so as to generally conform to the shape of the surface. An electrically conductive grid is placed over the indicator layer, and made electrically common with the object. The indicator layer is implanted through the conductive grid, and changes properties responsive to the plasma processing treatment. The implanted indicator layer is thereafter analyzed to determine the treatment characteristics of the indicator layer. Plasma processing spatial distribution and total dosage are determined nondestructively from this information and used to establish the plasma processing program for the object and adjust the plasma processing apparatus as needed.
    • 通过在对象的等离子体处理表面的至少一部分上设置指示层,以等于对该物体的形状进行等离子体处理,非物理地确定物体的等离子体处理处理特性,从而大体上符合表面的形状。 导电栅格放置在指示层上方,并与物体电气共用。 指示层通过导电栅格植入,并且响应于等离子体处理处理而改变特性。 此后分析植入的指示剂层以确定指示剂层的处理特性。 从该信息非破坏性地确定等离子体处理空间分布和总剂量,并用于建立对象的等离子体处理程序,并根据需要调整等离子体处理装置。