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1. 发明授权

US09957629B2 Electroplated coatings 有权
公开(公告)号：US09957629B2
公开(公告)日：2018-05-01
申请号：US14836229
申请日：2015-08-26
申请人： John Foster , Zhihong Tang , Kevin Garing , Bradley J. Burton , Thomas F. Lewis, III
发明人： John Foster , Zhihong Tang , Kevin Garing , Bradley J. Burton , Thomas F. Lewis, III
IPC分类号： C25D15/00 , C25D3/56 , C22C19/05 , C25D7/00 , F01D5/28 , B32B15/01 , C22C1/04
CPC分类号： C25D3/562 , B32B15/01 , C22C1/0433 , C22C19/057 , C25D7/00 , C25D15/00 , F01D5/288 , F05D2230/90 , F05D2300/177
摘要： A modified electroplated nickel-based metallic alloy coating and method of forming the same is provided. The electroplated coatings exhibit unique microstructure and composition which improves performance over conventional metallic materials. The coatings have significantly higher strength at elevated service temperatures.

2. 发明授权

US09464363B2 Method and an assembly for electrolytically depositing a coating 有权
标题翻译：电镀沉积涂层的方法和组件
公开(公告)号：US09464363B2
公开(公告)日：2016-10-11
申请号：US13519350
申请日：2010-12-28
申请人： Justine Menuey , Frederic Braillard , John Foster , Stephen Owens , Alan Taylor , Martin Chatterney
发明人： Justine Menuey , Frederic Braillard , John Foster , Stephen Owens , Alan Taylor , Martin Chatterney
IPC分类号： C23C10/60 , C23C10/02 , C25D15/00 , C25D17/00 , C25D5/02 , C25D5/16 , F01D5/00
CPC分类号： C25D17/008 , C25D5/022 , C25D5/16 , C25D15/00 , F01D5/005
摘要： A method for repairing a blade forming a cathode and having a surface to be coated defining a critical area, utilizing an anode, an electrolyte bath including insoluble particles, and a mounting on which the blade is mounted in a working position relative to a reference wall. The mounting is placed in the bath, and the particles and the metal of the anode are co-deposited to form the coating on the surface to be coated. The anode is typically placed facing the critical area and the mounting includes a mechanism for monitoring current lines to obtain a coating with a relatively constant, predetermined thickness for the critical area, that gradually falls to a value of substantially zero along edges of the coating.
摘要翻译：一种用于修复形成阴极并且具有限定临界区域的刀片的刀片的方法，利用阳极，包括不溶性颗粒的电解质浴池和其上刀片相对于参考壁安装在工作位置的安装件。将安装件放置在浴中，并且将阳极的颗粒和金属共沉积以在待涂覆的表面上形成涂层。阳极通常放置成面向临界区域，并且安装件包括用于监测电流线以获得对于临界区域具有相对恒定的预定厚度的涂层的机构，其沿着涂层的边缘逐渐下降到基本为零的值。

3. 发明授权

US08735302B2 High productivity combinatorial oxide terracing and PVD/ALD metal deposition combined with lithography for gate work function extraction 有权
标题翻译：高生产率组合氧化物梯度和PVD / ALD金属沉积结合光刻用于栅极功能提取
公开(公告)号：US08735302B2
公开(公告)日：2014-05-27
申请号：US13480023
申请日：2012-05-24
申请人： Amol Joshi , John Foster , Zhendong Hong , Olov Karlsson , Bei Li , Usha Raghuram
发明人： Amol Joshi , John Foster , Zhendong Hong , Olov Karlsson , Bei Li , Usha Raghuram
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L29/66181 , G01N27/002 , H01L22/14 , H01L22/20
摘要： Metal gate high-k capacitor structures with lithography patterning are used to extract gate work function using a combinatorial workflow. Oxide terracing, together with high productivity combinatorial process flow for metal deposition can provide optimum high-k gate dielectric and metal gate solutions for high performance logic transistors. The high productivity combinatorial technique can provide an evaluation of effective work function for given high-k dielectric metal gate stacks for PMOS and NMOS transistors, which is critical in identifying and selecting the right materials.
摘要翻译：使用光刻图案化的金属栅极高k电容器结构使用组合工作流程提取门功函数。氧化物梯田，以及用于金属沉积的高生产率组合工艺流程可为高性能逻辑晶体管提供最佳的高k栅介质和金属栅极解决方案。高生产率组合技术可以为PMOS和NMOS晶体管的给定高k介质金属栅极叠层提供有效的工作函数的评估，这对于识别和选择正确的材料至关重要。

4. 发明授权

US08716146B2 Low temperature etching of silicon nitride structures using phosphoric acid solutions 失效
标题翻译：使用磷酸溶液对氮化硅结构进行低温蚀刻
公开(公告)号：US08716146B2
公开(公告)日：2014-05-06
申请号：US13541397
申请日：2012-07-03
申请人： Gregory Nowling , John Foster
发明人： Gregory Nowling , John Foster
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/67086 , H01L29/6653
摘要： Provided are methods for processing semiconductor substrates. The methods involve etching silicon nitride structures using phosphoric acid solutions maintained at low temperatures, such as between about 110° C. and 130° C. These temperatures provide adequate etching rates and do not damage surrounding metal silicide and silicon oxide structures. The etching rates of silicon nitride may be 10 Angstroms per minute and greater. Lower temperatures also allow decreasing concentrations of phosphoric acid in the etching solutions, which in some embodiments may be less than 90 weight percent. As a result, more selective etching of the silicon nitride structures may be achieved. This selectivity may be as high as hundred times relative to the silicide and silicon oxide structures. The surface conductivity of the silicide structures may remain substantially unchanged by this etching process.
摘要翻译：提供了用于处理半导体衬底的方法。该方法包括使用保持在低温（例如约110℃至130℃）之间的磷酸溶液来蚀刻氮化硅结构。这些温度提供足够的蚀刻速率，并且不会损坏周围的金属硅化物和氧化硅结构。氮化硅的蚀刻速率可以为每分钟10埃或更高。较低的温度也允许蚀刻溶液中磷酸的浓度降低，在一些实施方案中磷酸的浓度可以小于90重量％。结果，可以实现对氮化硅结构的更多的选择性蚀刻。相对于硅化物和氧化硅结构，该选择性可高达百倍。通过该蚀刻工艺，硅化物结构的表面电导率可以保持基本不变。

5. 发明申请

US20130203245A1 METHODS FOR PFET FABRICATION USING APM SOLUTIONS 有权
标题翻译：使用APM解决方案的PFET制造方法
公开(公告)号：US20130203245A1
公开(公告)日：2013-08-08
申请号：US13564071
申请日：2012-08-01
申请人： Joanna WASYLUK , Stephan KRONHOLZ , Berthold Reimer , Sven Metzger , Gregory Nowling , John Foster , Paul Besser
发明人： Joanna WASYLUK , Stephan KRONHOLZ , Berthold Reimer , Sven Metzger , Gregory Nowling , John Foster , Paul Besser
IPC分类号： H01L21/20
CPC分类号： H01L21/02057 , H01L21/30604 , H01L21/30608 , H01L21/76232 , H01L21/823807 , H01L21/823878
摘要： A method for fabricating an integrated circuit from a semiconductor substrate having formed thereon over a first portion of the semiconductor substrate a hard mask layer and having formed thereon over a second portion of the semiconductor substrate an oxide layer. The first portion and the second portion are electrically isolated by a shallow trench isolation feature. The method includes removing the oxide layer from over the second portion and recessing the surface region of the second portion by applying an ammonia-hydrogen peroxide-water (APM) solution to form a recessed surface region. The APM solution is provided in a concentration of ammonium to hydrogen peroxide ranging from about 1:1 to about 1:0.001 and in a concentration of ammonium to water ranging from about 1:1 to about 1:20. The method further includes epitaxially growing a silicon-germanium (SiGe) layer on the recessed surface region.
摘要翻译：一种用于从半导体衬底制造集成电路的方法，其中半导体衬底的第一部分上形成有硬掩模层，并且在半导体衬底的第二部分上形成氧化物层。第一部分和第二部分由浅沟槽隔离特征电隔离。该方法包括通过施加氨 - 过氧化氢 - 水（APM）溶液以形成凹入的表面区域，从第二部分上方去除氧化物层并使第二部分的表面区域凹陷。提供APM溶液的浓度为约1：1至约1：0.001的过氧化氢，铵浓度为约1：1至约1:20的水。该方法还包括在凹表面区域上外延生长硅 - 锗（SiGe）层。

6. 发明授权

US08314022B1 Method for etching gate stack 有权
标题翻译：蚀刻栅极堆叠的方法
公开(公告)号：US08314022B1
公开(公告)日：2012-11-20
申请号：US13112832
申请日：2011-05-20
申请人： John Foster , Kim Van Berkel
发明人： John Foster , Kim Van Berkel
IPC分类号： H01L21/3205
CPC分类号： H01L29/78 , H01L21/28114 , H01L21/31111 , H01L21/32134 , H01L29/42376 , H01L29/51 , H01L29/513 , H01L29/66477
摘要： A method for etching a metal gate stack is provided. The method includes forming a gate stack on a substrate, where the gate stack includes a metal gate. A wet etch process is performed on the gate stack. The wet etch process includes submersing the substrate with the gate stack in an aqueous solution composed of a wet etchant and an oxidizer, removing the substrate from the solution and rinsing the solution from the etched gate stack.
摘要翻译：提供了蚀刻金属栅极叠层的方法。该方法包括在衬底上形成栅极堆叠，其中栅极堆叠包括金属栅极。在栅极堆叠上执行湿蚀刻工艺。湿蚀刻工艺包括将具有栅极堆叠的衬底浸入由湿蚀刻剂和氧化剂组成的水溶液中，从溶液中除去衬底并从蚀刻的栅极堆叠中冲洗溶液。

7. 发明申请

US20110300059A1 PROCESS FOR GAS SWEETENING 失效
标题翻译：气体流动过程
公开(公告)号：US20110300059A1
公开(公告)日：2011-12-08
申请号：US13133776
申请日：2009-12-08
申请人： Suling Zhai , John Foster , Stephen Ward , Malcolm Harrison
发明人： Suling Zhai , John Foster , Stephen Ward , Malcolm Harrison
IPC分类号： C01B17/04 , B01J19/00
CPC分类号： C01B17/0413 , B01D53/50 , B01D53/52 , B01D53/8609 , B01D53/8612 , B01D2255/20707 , B01D2255/20738 , B01D2255/2092 , B01D2258/06 , C01B17/04 , C01B17/0404 , C01B17/0439
摘要： A process for treating a gas stream comprising hydrogen sulphide, the process comprising the steps of: (i) mixing a first gas stream comprising hydrogen sulphide with a second stream comprising sulphur dioxide to produce a combined stream, whereby elemental sulphur is produced by a reaction between the hydrogen sulphide and the sulphur dioxide; (ii) removing elemental sulphur, and optionally water, from the combined stream; and (iii) oxidising at least some of the elemental sulphur to form sulphur dioxide for use in the second stream, wherein, the reaction is conducted at a temperature of from 15 to 155° C. and a pressure of at least 3 MPa.
摘要翻译：一种用于处理包含硫化氢的气流的方法，该方法包括以下步骤：（i）将包含硫化氢的第一气流与包含二氧化硫的第二流混合以产生组合流，由此通过反应产生元素硫在硫化氢和二氧化硫之间; （ii）从组合的流中除去元素硫和任选的水; 和（iii）氧化至少一些元素硫以形成用于第二流中的二氧化硫，其中反应在15至155℃的温度和至少3MPa的压力下进行。

8. 发明授权

US07305935B1 Slotted antenna waveguide plasma source 失效
标题翻译：开槽天线波导等离子体源
公开(公告)号：US07305935B1
公开(公告)日：2007-12-11
申请号：US10925499
申请日：2004-08-25
申请人： John Foster
发明人： John Foster
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C14/357 , H01J27/18 , H01J37/077 , H01J37/08 , H01J37/32422 , H01J37/32678 , H01J2237/0041 , H01J2237/06366 , H01J2237/3114 , H01J2237/31701 , H05H1/46
摘要： A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster applications, ion implantation, and related applications. This slotted antenna plasma source invention operates on the principle of electron cyclotron resonance (ECR). It employs no window and it is completely electrodeless and therefore its operation lifetime is long, being limited only by either the microwave generator itself or charged particle extraction grids if used. The high density plasma source can also be used to extract an electron beam that can be used as a plasma cathode neutralizer for ion source beam neutralization applications.
摘要翻译：已经证明通过使用无窗无电极矩形开槽天线波导等离子体源的微波注入产生的高密度等离子体。等离子探头测量表明，该源可适用于低功率离子推进器应用，离子注入和相关应用。这种开槽天线等离子体源发明以电子回旋共振（ECR）为原则。它没有窗户，它是完全无电极的，因此其使用寿命长，仅受微波发生器本身或带电粒子提取网格的限制（如果使用）。高密度等离子体源还可用于提取可用作离子源光束中和应用的等离子体阴极中和器的电子束。

9. 发明申请

US20050003631A1 Method and apparatus for assembling an array of micro-devices 有权
标题翻译：用于组装微器件阵列的方法和装置
公开(公告)号：US20050003631A1
公开(公告)日：2005-01-06
申请号：US10866123
申请日：2004-06-12
申请人： Patrick Feierabend , Richard Martin , Jeffery Summers , Andrew Wallis , Paul Rubel , John Foster , John Stocker
发明人： Patrick Feierabend , Richard Martin , Jeffery Summers , Andrew Wallis , Paul Rubel , John Foster , John Stocker
IPC分类号： G02B6/35 , H01L21/30 , H01L21/44 , H01L29/06
CPC分类号： B81C3/008 , G02B6/3512 , G02B6/3518 , G02B6/353 , G02B6/3546 , G02B6/3572 , G02B6/3578 , G02B6/3584 , G02B6/3586 , Y10T29/41
摘要： The invention describes a method and apparatus for deploying micromachined actuators in a plane which is orthogonal to the original fabrication plane of the devices. Using batch-processing, photolithographic procedures known in the micromachined electro-mechanical system (MEMS) art, a plurality of devices is constructed on a suitable substrate. The devices are then separated one from another by sawing and dicing the original fabrication wafer. The devices are rotated into an orthogonal orientation and affixed to a second wafer. The second wafer also contains circuitry for addressing and manipulating each of the devices independently of the others. With this method and apparatus, arrays of actuators are constructed whose plane of actuation is perpendicular to the plane of the array. This invention is useful for constructing N×M fiber optic switches, which direct light from N input fibers into M output fibers.
摘要翻译：本发明描述了一种用于在与装置的原始制造平面正交的平面中展开微机械加工的致动器的方法和装置。利用微加工机电系统（MEMS）技术中已知的分批处理，光刻工艺，多个器件被构造在合适的衬底上。然后通过锯切和切割原始制造晶片来将器件彼此分离。将装置旋转成正交取向并固定到第二晶片。第二晶片还包含用于独立于其它装置寻址和操纵每个装置的电路。利用这种方法和装置，构造致动器阵列，其致动平面垂直于阵列的平面。本发明对于构造NxM光纤开关是有用的，其将来自N个输入光纤的光引导到M个输出光纤中。

10. 发明授权

US5702574A Jig for coating rotor blades 失效
标题翻译：用于涂覆转子叶片的夹具
公开(公告)号：US5702574A
公开(公告)日：1997-12-30
申请号：US505322
申请日：1996-05-03
申请人： John Foster , Alan Taylor , Martin Patrick Chatterley
发明人： John Foster , Alan Taylor , Martin Patrick Chatterley
IPC分类号： C25D5/02 , C25D5/12 , C25D15/02 , C25D17/06 , F01D5/20 , F01D25/28
CPC分类号： F01D25/285 , C25D15/02 , C25D17/06 , C25D5/02 , F01D11/12
摘要： A method of and apparatus for producing abrasive tips on compressor or turbine rotor blades by electrolytic or electroless deposition in which the blades are mounted in a hollow jig with the tips of the blades extending through sealed openings in the jig and abrasive tips are formed on the tips. The parts of the blades within the hollow jig are isolated from the electrolyte without the need for wax masking. Preferably the jig is cylindrical with the blades extending radially through at least one circumferential row of apertures. The jig may comprise two end discs and at least one ring in which a circumferential row of apertures is formed. The ring is positioned between the end discs and means are provided for securing the discs and ring together.
摘要翻译： PCT No.PCT / GB94 / 02777 Sec。 371日期：1996年5月3日 102（e）日期1996年5月3日PCT 1994年12月21日PCT PCT。第WO95 / 17535号公报日期1995年6月29日一种用于通过电解或无电沉积在压缩机或涡轮转子叶片上产生磨料尖端的方法和设备，其中叶片安装在中空夹具中，其中叶片的尖端延伸穿过夹具中的密封开口和磨料技巧是在技巧上形成的。中空夹具内的叶片的部分与电解质分离，而不需要蜡掩蔽。优选地，夹具是圆柱形的，其中叶片径向延伸穿过至少一个圆周排的孔。夹具可以包括两个端盘和至少一个环，其中形成有圆周排的孔。环位于端盘之间，并且提供用于将盘和环固定在一起的装置。

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