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1. 发明授权

US5846122A Method and apparatus for polishing metal-soluble materials such as diamond 失效
标题翻译：用于抛光金属可溶性材料如金刚石的方法和设备
公开(公告)号：US5846122A
公开(公告)日：1998-12-08
申请号：US429259
申请日：1995-04-25
申请人： John Edwin Graebner , Sungho Jin , Guenther Wilhelm Kammlott , Wei Zhu
发明人： John Edwin Graebner , Sungho Jin , Guenther Wilhelm Kammlott , Wei Zhu
IPC分类号： B24B1/00 , B24B37/04 , B24B7/19 , B24B7/30
CPC分类号： B24B37/04 , B24B37/042
摘要： Applicants have discovered a new method for fine polishing surfaces of metal-soluble materials such as diamond to the submicron level. The method involves applying to the material surface a polishing medium composed of metal powder and an acidic or basic carrier. The surface is then polished by high speed rubbing to a submicron finish. Several embodiments of apparatus for performing the polishing are described.
摘要翻译：申请人已经发现了将金属可溶性材料如金刚石的表面精细抛光到亚微米级的新方法。该方法包括向材料表面施加由金属粉末和酸性或碱性载体构成的抛光介质。然后通过高速摩擦将表面抛光到亚微米的表面。描述了用于执行抛光的装置的几个实施例。

2. 发明授权

US5796211A Microwave vacuum tube devices employing electron sources comprising activated ultrafine diamonds 失效
标题翻译：使用包含活性超细金刚石的电子源的微波真空管装置
公开(公告)号：US5796211A
公开(公告)日：1998-08-18
申请号：US640592
申请日：1996-05-01
申请人： John Edwin Graebner , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： John Edwin Graebner , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J1/304 , H01J9/02 , H01J23/06 , H01J23/04
CPC分类号： H01J9/025 , H01J1/3042 , H01J23/06 , H01J2201/30403 , H01J2201/30457 , H01J61/0677 , H01J61/0737
摘要： In accordance with the invention, a microwave vacuum tube device, such as a traveling wave tube, is provided with an electron source comprising activated ultrafine diamonds. Applicants have discovered that ultrafine diamonds (5-1,000 nm diameter), when activated by heat treatment in a hydrogen plasma, become excellent room-temperature electron emitters capable of producing electron emission current density of at least 10 mA/cm.sup.2 at low electric fields of 10 V/micrometer. Sources using these diamonds provide electrons for microwave vacuum tubes at low voltage, low operating temperature and with fast turn-on characteristics. A multiple grid structure is described for providing high quality electron beams particularly useful for traveling wave tubes.
摘要翻译：根据本发明，诸如行波管的微波真空管装置设置有包括活化的超细金刚石的电子源。申请人已经发现，当在氢等离子体中通过热处理活化时，超细金刚石（直径5-1000nm）成为能够在低电场下产生至少10mA / cm 2的电子发射电流密度的优异的室温电子发射体 10 V /千分尺。使用这些钻石的源在低电压，低工作温度和快速开启特性的微波真空管中提供电子。描述了用于提供对于行波管特别有用的高质量电子束的多栅格结构。

3. 发明授权

US5746931A Method and apparatus for chemical-mechanical polishing of diamond 失效
标题翻译：钻石化学机械抛光的方法和装置
公开(公告)号：US5746931A
公开(公告)日：1998-05-05
申请号：US760845
申请日：1996-12-05
申请人： John Edwin Graebner , Sungho Jin , Wei Zhu
发明人： John Edwin Graebner , Sungho Jin , Wei Zhu
IPC分类号： B24B37/04 , H01L21/00
CPC分类号： B24B37/04
摘要： This application describes a new method for rapid thinning, planarizing and fine polishing surfaces of diamond to the submicron/nanometer level so that large area, uniform thickness diamond wafers can be obtained. The method combines both chemical (dissolution of carbon in molten metals) and mechanical (rotating or moving sample fixtures in contact with the dissolving metals) polishing to achieve flat, smooth surface finishes in a relatively short period of time, thus improving the quality and economics of the overall polishing process. Several embodiments of apparatus for performing such chemical-mechanical polishing (CMP) of diamond are described.
摘要翻译：该应用描述了一种用于将金刚石的表面快速稀释，平面化和精细抛光到亚微米/纳米级的新方法，从而可以获得大面积均匀厚度的金刚石晶片。该方法结合了化学（溶解在金属中的碳）和机械（与溶解金属接触的旋转或移动的样品夹具）抛光，以在相对较短的时间内实现平坦，光滑的表面光洁度，从而提高了质量和经济性的整体抛光过程。描述了用于进行金刚石的这种化学机械抛光（CMP）的设备的几个实施例。

4. 发明授权

US06248394B1 Process for fabricating device comprising lead zirconate titanate 有权
标题翻译：包括锆钛酸铅制造装置的方法
公开(公告)号：US06248394B1
公开(公告)日：2001-06-19
申请号：US09235735
申请日：1999-01-22
申请人： Honghua Du , John Edwin Graebner , Sungho Jin , David Wilfred Johnson, Jr. , Wei Zhu
发明人： Honghua Du , John Edwin Graebner , Sungho Jin , David Wilfred Johnson, Jr. , Wei Zhu
IPC分类号： B05D300
CPC分类号： H01L41/316 , H01L41/319
摘要： The invention provides a device comprising an oriented, perovskite PZT layer on a diamond substrate, or other substrates such as silicon or platinum-coated materials. Vapor phase deposition processes are used to deposit a PZT layer onto a perovskite template layer on the substrate. The template layer is more readily deposited in a perovskite structure compared to PZT, and provides for nucleation and growth of the deposited PZT in perovskite form. The vapor phase deposition promotes the oriented structure of the resulting film. The structure is useful in a variety of devices, including surface acoustic wave devices.
摘要翻译：本发明提供了一种装置，其包括在金刚石基底上的取向的钙钛矿PZT层或其它基底例如硅或铂涂覆的材料。气相沉积工艺用于将PZT层沉积在基底上的钙钛矿模板层上。与PZT相比，模板层更容易沉积在钙钛矿结构中，并且提供沉积的PZT以钙钛矿形式的成核和生长。气相沉积促进所得膜的定向结构。该结构在各种装置中是有用的，包括表面声波装置。

5. 发明授权

US6049155A Thermally tunable surface acoustic wave devices 失效
标题翻译：热可调声表面波装置
公开(公告)号：US6049155A
公开(公告)日：2000-04-11
申请号：US961542
申请日：1997-10-27
申请人： John Edwin Graebner , Sungho Jin , Hareesh Mavoori , Wei Zhu
发明人： John Edwin Graebner , Sungho Jin , Hareesh Mavoori , Wei Zhu
IPC分类号： H03H9/08 , H03H9/145 , H01L41/08
CPC分类号： H03H9/145 , H03H9/08
摘要： In accordance with the invention, the piezoelectric layer of a SAW device is mechanically coupled to a substrate of temperature-sensitive material having a large coefficient of thermal expansion or contraction. In a preferred embodiment, the temperature-sensitive material is a nickel/titanium alloy having high negative coefficient of thermal expansion of about -200.times.10.sup.-6. The frequency of the device can be tuned by changing the temperature of operation.
摘要翻译：根据本发明，SAW器件的压电层机械耦合到具有大的热膨胀或收缩系数的温度敏感材料的衬底。在优选的实施方案中，温度敏感材料是具有约-200×10 -6的高负热膨胀系数的镍/钛合金。可以通过改变操作温度来调节设备的频率。

6. 发明授权

US06222299B1 Surface acoustic wave devices comprising large-grained diamonds and methods for making 失效
标题翻译：表面声波装置包括大颗粒钻石和制造方法
公开(公告)号：US06222299B1
公开(公告)日：2001-04-24
申请号：US09020752
申请日：1998-02-09
申请人： John Edwin Graebner , Sungho Jin , Wei Zhu
发明人： John Edwin Graebner , Sungho Jin , Wei Zhu
IPC分类号： H03H925
CPC分类号： H03H9/059 , H01L2224/16225 , H03H3/08 , H03H9/02582
摘要： Embodiments of the invention include an improved diamond-based surface acoustic wave (SAW) filter device. The SAW device comprises polished, large-grained diamond in combination with a piezoelectric layer to enhance the acoustic velocity and operational frequency of the SAW device with reduced loss and increased efficiency. Also, the use of a pre-polished, large-grained diamond slab reduces processing complications such as contamination or stressing of delicate device circuitry adjacent to the diamond component. Alternative embodiments of the invention include planar or vertical interconnection schemes for packaging of the SAW device and also include planarization schemes for convenient deposition and patterning of the SAW device metallization layer.
摘要翻译：本发明的实施例包括改进的基于金刚石的表面声波（SAW）滤波器装置。 SAW器件包括与压电层组合的抛光的大颗粒金刚石，以增加SAW器件的声速和操作频率，减少损耗并提高效率。此外，使用预抛光的大颗粒金刚石板可减少加工并发症，例如与金刚石部件相邻的精密器件电路的污染或应力。本发明的替代实施例包括用于SAW器件封装的平面或垂直互连方案，并且还包括用于SAW器件金属化层的方便沉积和图案化的平面化方案。

7. 发明授权

US5959388A Magnetically tunable surface acoustic wave devices 失效
标题翻译：磁性可调声表面波器件
公开(公告)号：US5959388A
公开(公告)日：1999-09-28
申请号：US957954
申请日：1997-10-27
申请人： John Edwin Graebner , Sungho Jin , Wei Zhu
发明人： John Edwin Graebner , Sungho Jin , Wei Zhu
IPC分类号： H03H9/22 , H03H9/64 , H01L41/04 , H03H7/34
CPC分类号： H03H9/22 , H03H9/6403
摘要： In accordance with the invention, the operating frequency of a SAW device is magnetically tuned. In a first embodiment, the SAW device comprises a piezoelectric layer mechanically coupled to a substrate or body of magnetostrictive material. Strains magnetically induced in the magnetostrictive substrate is coupled to the piezoelectric layer, altering the velocity at which it can transmit acoustic waves. In an alternative embodiment, surface waves are directly generated in a magnetostrictive material and the velocity is directly altered by an applied magnetic field.
摘要翻译：根据本发明，SAW器件的工作频率被磁调谐。在第一实施例中，SAW器件包括机械耦合到磁致伸缩材料的衬底或主体的压电层。在磁致伸缩衬底中磁感应的应变耦合到压电层，改变其可以传播声波的速度。在替代实施例中，在磁致伸缩材料中直接产生表面波，并且所施加的磁场直接改变速度。

8. 发明授权

US5674107A Diamond polishing method and apparatus employing oxygen-emitting medium 失效
标题翻译：金刚石抛光方法和使用发氧介质的设备
公开(公告)号：US5674107A
公开(公告)日：1997-10-07
申请号：US429263
申请日：1995-04-25
申请人： John Edwin Graebner , Sungho Jin , Guenther Wilhelm Kammlott , Wei Zhu
发明人： John Edwin Graebner , Sungho Jin , Guenther Wilhelm Kammlott , Wei Zhu
IPC分类号： B24B13/00 , B24B37/04 , B24B1/00
CPC分类号： B24B37/04 , B24B13/00
摘要： A novel technique for fine polishing surfaces of diamond to the submicron level involves applying to the diamond surface an oxygen-emitting polishing medium, either a dry powder or a powder dispersed in a liquid carrier. The diamond surface is then polished by high speed rubbing to a submicron finish by inducing oxygen emission and oxygen-carbon interaction. Several embodiments of apparatus for polishing are described.
摘要翻译：用于将金刚石表面精细抛光到亚微米级的新技术涉及向金刚石表面施加氧发射抛光介质，即分散在液体载体中的干粉或粉末。然后通过诱导氧气发射和氧 - 碳相互作用，将金刚石表面通过高速摩擦抛光至亚微米表面。描述抛光装置的几个实施例。

9. 发明授权

US5664884A Apparatus for determining the thermal resistivity of electrically insulating crystalline materials 失效
标题翻译：用于确定电绝缘结晶材料的热阻的装置
公开(公告)号：US5664884A
公开(公告)日：1997-09-09
申请号：US509267
申请日：1995-07-31
申请人： John Edwin Graebner , Sungho Jin
发明人： John Edwin Graebner , Sungho Jin
IPC分类号： G01N25/18 , G01N25/20
CPC分类号： G01N25/18
摘要： This invention involves apparatus for determining the thermal resistivities W.sub.s (=1/.kappa..sub.s) of electrically insulating, crystalline or polycrystalline samples under test (SUTs), all comprising host material such as CVD diamond. Once the optical absorptivities .alpha..sub.1 and .alpha..sub.2 and the thermal resistivities W.sub.1 and W.sub.2 of at least two other crystalline or polycrystalline bodies B.sub.1 and B.sub.2, respectively, comprising the same host material as the SUTs, and containing the same type of impurity or combination of impurities as the SUTs, are measured by some other technique--the inventive apparatus can then determine the thermal resistivities W.sub.s of the SUTs rather quickly from a measurement only of the optical absorptivities a.sub.s of the SUTs. These determinations of the thermal resistivities W.sub.s of the SUTs rely on our discovery that the following linear relationship exists: W=A+C.alpha., where A and C are constants so long as the type of impurity or combination of impurities in all the bodies B.sub.1, B.sub.2, and SUTs is the same, even though the impurities or combination of impurities have different concentrations in the bodies B.sub.1 and B.sub.2, as well as in the SUTs.
摘要翻译：本发明涉及用于确定所测试的电绝缘，结晶或多晶样品（SUT）的热电阻W s（= 1 / kapp）的设备，其全部包括诸如CVD金刚石的主体材料。一旦光吸收率α1和α2以及至少两个其它晶体或多晶体B1和B2的热电阻W1和W2分别包含与SUT相同的主体材料，并且含有相同类型的杂质或组合作为SUT的杂质通过一些其它技术来测量，然后本发明的设备可以从仅从SUT的光吸收率的测量中快速地确定SUT的热电阻Ws。 SUT的热电阻Ws的这些测定依赖于我们的发现，存在以下线性关系：W = A +Cα，其中A和C是常数，只要所有体的杂质或杂质的组合B1 ，B2和SUT相同，即使杂质或杂质组合在体B1和B2以及SUT中也具有不同的浓度。

10. 发明授权

US06197375B1 Method comprising removal of material from a diamond film 失效
标题翻译：包括从金刚石薄膜中去除材料的方法
公开(公告)号：US06197375B1
公开(公告)日：2001-03-06
申请号：US08278688
申请日：1994-07-21
申请人： John Edwin Graebner , Sungho Jin , Thomas Henry Tiefel
发明人： John Edwin Graebner , Sungho Jin , Thomas Henry Tiefel
IPC分类号： C23C1626
CPC分类号： C23C16/56
摘要： Many potential applications of CVD diamond film require the ability to remove a predetermined quantity of material from a surface of the film. We have discovered that such removal is advantageously accomplished by contacting the surface of the polycrystalline diamond film with a metal selected from Fe, Ni, Mn and Ti (preferably Fe and Mn, most preferably Mn), and maintaining the metal-contacted diamond film at a temperature in the range 600-1100° C. (preferably 800-1000° C.) without relative lateral motion between the film and the metal, for an effective time for removal of the quantity of material, exemplarily less than 100 hours. The metal can be in any appropriate form, e.g., a deposited layer, (including a patterned layer), a foil, or powder. We have also discovered that the local thermal conductivity of CVD diamond films typically increases with distance from the lower surface of an as-grown film. Thus, in applications such as heat spreading it will frequently be advantageous to remove some of the fine-grained, low thermal conductivity material adjacent to the lower surface of the as-grown CVD film. Such removal can be accomplished by means of the above-described technique.
摘要翻译： CVD金刚石膜的许多潜在应用需要从膜的表面去除预定量的材料的能力。我们已经发现，这种去除有利地通过使多晶金刚石膜的表面与选自Fe，Ni，Mn和Ti（优选Fe和Mn，最优选Mn）的金属接触，并将金属接触的金刚石膜保持在温度在600-1100℃（优选800-1000℃）的范围内，而膜和金属之间没有相对的横向运动，用于去除材料量的有效时间，示例性地小于100小时。金属可以是任何适当的形式，例如沉积层（包括图案层），箔或粉末。我们还发现，CVD金刚石膜的局部导热率通常随着从生长膜的下表面的距离而增加。因此，在诸如散热的应用中，通常有利的是去除与生长的CVD膜的下表面相邻的细粒度低的热导率材料。这种去除可以通过上述技术来实现。

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