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1. 发明授权

US5796211A Microwave vacuum tube devices employing electron sources comprising activated ultrafine diamonds 失效
标题翻译：使用包含活性超细金刚石的电子源的微波真空管装置
公开(公告)号：US5796211A
公开(公告)日：1998-08-18
申请号：US640592
申请日：1996-05-01
申请人： John Edwin Graebner , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： John Edwin Graebner , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J1/304 , H01J9/02 , H01J23/06 , H01J23/04
CPC分类号： H01J9/025 , H01J1/3042 , H01J23/06 , H01J2201/30403 , H01J2201/30457 , H01J61/0677 , H01J61/0737
摘要： In accordance with the invention, a microwave vacuum tube device, such as a traveling wave tube, is provided with an electron source comprising activated ultrafine diamonds. Applicants have discovered that ultrafine diamonds (5-1,000 nm diameter), when activated by heat treatment in a hydrogen plasma, become excellent room-temperature electron emitters capable of producing electron emission current density of at least 10 mA/cm.sup.2 at low electric fields of 10 V/micrometer. Sources using these diamonds provide electrons for microwave vacuum tubes at low voltage, low operating temperature and with fast turn-on characteristics. A multiple grid structure is described for providing high quality electron beams particularly useful for traveling wave tubes.
摘要翻译：根据本发明，诸如行波管的微波真空管装置设置有包括活化的超细金刚石的电子源。申请人已经发现，当在氢等离子体中通过热处理活化时，超细金刚石（直径5-1000nm）成为能够在低电场下产生至少10mA / cm 2的电子发射电流密度的优异的室温电子发射体 10 V /千分尺。使用这些钻石的源在低电压，低工作温度和快速开启特性的微波真空管中提供电子。描述了用于提供对于行波管特别有用的高质量电子束的多栅格结构。

2. 发明授权

US5977697A Field emission devices employing diamond particle emitters 失效
标题翻译：使用金刚石颗粒发射体的场致发射器件
公开(公告)号：US5977697A
公开(公告)日：1999-11-02
申请号：US6347
申请日：1998-01-13
申请人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J31/12 , H01J1/304 , H01J9/02 , H01J23/06 , H01J29/04 , H01J1/30
CPC分类号： H01J23/06 , H01J1/3042 , H01J9/025 , H01J2201/30403 , H01J2201/30457 , H01J61/0677 , H01J61/0737
摘要： Improved diamond particle emitters, useful for flat panel displays, are fabricated by suspending nanometer-sized ultra-fine particles in a solution, applying the suspension as a coating onto a conducting substrate such as n-type Si or metal, subjecting the coated substrate to a plasma of hydrogen, and applying a thin, conformal diamond overcoating layer onto the particles. The resulting emitters show excellent emission properties, such as extremely low turn-on voltage, good uniformity and high current densities. In particular, the electron emitters are capable of producing electron emission current densities of at least 0.1 mA/,mm.sup.2 at extremely low vacuum electric fields of 0.2-3.0 V/.mu.m V/.mu.m. These field values are about an order of magnitude lower than exhibited by the best defective CVD diamond and almost two orders of magnitude lower than p-type semiconducting diamond. It is further found that the emission characteristics remain the same even after the plasma treated diamond surface is exposed to air for several months.
摘要翻译：用于平板显示器的改进的金刚石颗粒发射器通过将纳米尺寸的超细颗粒悬浮在溶液中来制造，将悬浮液作为涂层施涂到诸如n型Si或金属的导电基材上，使经涂覆的基材氢的等离子体，并将薄的保形金刚石外涂层施加到颗粒上。所得到的发射体显示出优异的发射特性，例如极低的导通电压，良好的均匀性和高的电流密度。特别地，电子发射体在0.2-3.0V / m V /μm的极低真空电场下能够产生至少0.1mA / mm2的电子发射电流密度。这些场值比由最好的有缺陷的CVD金刚石显示的低一个数量级，比p型半导体金刚石低两个数量级。进一步发现即使在等离子体处理的金刚石表面暴露于空气几个月之后，发射特性也保持不变。

3. 发明授权

US5744195A Field emission devices employing enhanced diamond field emitters 失效
标题翻译：采用增强金刚石场发射体的场致发射器件
公开(公告)号：US5744195A
公开(公告)日：1998-04-28
申请号：US752234
申请日：1996-11-19
申请人： Sungho Jin , Gregory Peter Kochanski , Lawrence Seibles , Wei Zhu
发明人： Sungho Jin , Gregory Peter Kochanski , Lawrence Seibles , Wei Zhu
IPC分类号： C30B29/04 , C30B30/02 , C30B31/20 , H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12 , H01L21/205 , C23C16/26 , B05D3/06
CPC分类号： H01J1/3042 , H01J2201/30403 , H01J2201/30457 , H01J2329/00
摘要： Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.
摘要翻译：申请人已经发现了用于制造，处理和使用金刚石的方法，其大大增强了它们的低电压发射能力。具体来说，申请人已经发现，生长或处理以增加缺陷浓度的富含缺陷的钻石 - 金刚石具有增强的低电压发射性能。富含缺陷的金刚石的特征在于在1332cm-1处的金刚石峰，在5-15cm -1（优选7-11cm -1）的范围内以最大DELTA K的全宽度加宽的拉曼光谱。这样的富含缺陷的金刚石可以在25V /μm以下的低施加电场下发射0.1mA / mm 2以上的电子密度。特别有利的结构在15V /μm或更小的场中使用直径小于10μm的岛或颗粒阵列中的这种金刚石。

4. 发明授权

US5704820A Method for making improved pillar structure for field emission devices 失效
标题翻译：制造场发射器件柱状结构改进方法
公开(公告)号：US5704820A
公开(公告)日：1998-01-06
申请号：US381377
申请日：1995-01-31
申请人： Edwin Arthur Chandross , Sungho Jin , Gregory Peter Kochanski , John Thomson, Jr. , Wei Zhu
发明人： Edwin Arthur Chandross , Sungho Jin , Gregory Peter Kochanski , John Thomson, Jr. , Wei Zhu
IPC分类号： H01J31/12 , H01J9/18 , H01J9/24 , H01J29/87 , H01J1/88
CPC分类号： H01J9/242 , H01J31/123 , H01J2329/863 , H01J2329/8635 , H01J2329/864
摘要： The pillar structure according to the invention has a substantially longer surface path length from negative to positive electrodes resist breakdown in a high voltage environment. The processing and assembly methods in this invention permit low-cost manufacturing of high breakdown-voltage, dielectric pillars for the flat panel display.
摘要翻译：根据本发明的支柱结构具有从负电极到正极的基本上更长的表面路径长度，在高压环境中抵抗击穿。本发明的处理和组装方法允许用于平板显示器的高击穿电压，介电柱的低成本制造。

5. 发明授权

US07268475B1 Field emission devices having corrugated support pillars with discontinuous conductive coating 失效
标题翻译：具有不连续导电涂层的波纹支撑柱的场发射装置
公开(公告)号：US07268475B1
公开(公告)日：2007-09-11
申请号：US08771369
申请日：1996-12-16
申请人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J1/88
CPC分类号： H01J9/242 , H01J29/864 , H01J31/123 , H01J2329/863 , H01J2329/8635 , H01J2329/864 , H01J2329/8645
摘要： In accordance with the invention, a field emission device is made by providing the device electrodes, forming a plurality of corrugated insulating rods with discontinuous coatings of conductive or semiconductive material with low secondary electron emission coefficient, adhering the rods to an electrode, cutting the rods to define corrugated pillars, and finishing the device. The result is low cost production of a field emission device having superior resistance to breakdown in high field operation.
摘要翻译：根据本发明，通过提供器件电极，形成具有低二次电子发射系数的导电或半导体材料的不连续涂层的多个波纹绝缘棒，将棒粘附到电极上，切割棒定义波纹柱，并整理设备。结果是在高场操作中具有优异的耐击穿性的场致发射装置的低成本生产。

6. 发明授权

US06538367B1 Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same 有权
标题翻译：场致发射器件包括场集中纳米电导体组件及其制造方法
公开(公告)号：US06538367B1
公开(公告)日：2003-03-25
申请号：US09369802
申请日：1999-08-06
申请人： Kyung Moon Choi , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Kyung Moon Choi , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J102
CPC分类号： H01J1/304 , B82Y10/00 , H01J9/025 , H01J23/04 , H01J2201/30469 , H01J2225/38 , Y10S977/939
摘要： This invention is predicated on applicants' discovery that a highly oriented nanoconductor structure alone does not guarantee efficient field emission. To the contrary, the conventional densely populated, highly oriented structures actually yield relatively poor field emission characteristics. Applicants have determined that the individual nanoconductors in conventional assemblies are so closely spaced that they shield each other from effective field concentration at the ends, thus diminishing the driving force for efficient electron emission. In accordance with the invention, an improved field emitting nanoconductors assembly (a “low density nanoconductor assembly”) comprises an array of nanoconductors which are highly aligned but spaced from each other no closer than 10% of the height of the nanoconductors. In this way, the field strength at the ends will be at least 50% of the maximal field concentration possible. Several ways of making the optimally low density assemblies are described along with several devices employing the assemblies.
摘要翻译：本发明基于申请人的发现，即单独的高度取向的纳米结构结构不能保证有效的场发射。相反，传统的人口稠密，高度取向的结构实际上产生相对较差的场致发射特性。申请人已经确定，常规组件中的单个纳米电感器如此紧密地间隔开，使得它们彼此屏蔽在端部处的有效场浓度，从而减少了有效电子发射的驱动力。根据本发明，改进的场发射纳米结构器件组件 “低密度纳米导体组件”）包括高度对准但彼此间隔不超过纳米电感器高度的10％的纳米电感器阵列。以这种方式，末端的场强将是可能的最大场浓度的至少50％。使用几种使用组件的装置来描述制造最佳低密度组件的几种方式。

7. 发明授权

US5982095A Plasma displays having electrodes of low-electron affinity materials 失效
标题翻译：具有低电子亲和性材料电极的等离子体显示器
公开(公告)号：US5982095A
公开(公告)日：1999-11-09
申请号：US530978
申请日：1995-09-19
申请人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J9/02 , H01J11/12 , H01J11/22 , H01J17/06 , H01J17/49
CPC分类号： H01J11/12 , H01J11/22 , H01J17/066 , H01J2211/225 , H01J2217/49
摘要： Improved plasma displays utilize electrodes including low electron affinity (LEA) materials such as diamond. In dc displays the LEA materials are disposed on the cathode. In ac displays the LEA materials are disposed on the dielectric layers of both electrodes. The improved displays exhibit reduced operating voltage, higher resolution, and enhanced robustness.
摘要翻译：改进的等离子体显示器使用包括诸如金刚石的低电子亲和力（LEA）材料的电极。在直流显示器中，LEA材料设置在阴极上。在交流显示中，LEA材料设置在两个电极的电介质层上。改进的显示器显示出降低的工作电压，更高的分辨率和增强的鲁棒性。

8. 发明授权

US06741019B1 Article comprising aligned nanowires 有权
标题翻译：文章包括对齐的纳米线
公开(公告)号：US06741019B1
公开(公告)日：2004-05-25
申请号：US09420157
申请日：1999-10-18
申请人： Robert William Filas , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Robert William Filas , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J130
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469 , H01J2223/04 , Y10S977/762
摘要： An improved process for fabricating emitter structures from nanowires, wherein the nanowires are coated with a magnetic material to allow useful alignment of the wires in the emitter array, and techniques are utilized to provide desirable protrusion of the aligned nanowires in the final structure. In one embodiment, nanowires at least partially coated by a magnetic material are provided, the nanowires having an average length of about 0.1 &mgr;m to about 10,000 &mgr;m. The nanowires are mixed in a liquid medium, and a magnetic field is applied to align the nanowires. The liquid medium is provided with a precursor material capable of consolidation into a solid matrix, e.g., conductive particles or a metal salt, the matrix securing the nanowires in an aligned orientation. A portion of the aligned nanowires are exposed, e.g., by etching a surface portion of the matrix material, to provide desirable nanowire tip protrusion.
摘要翻译：一种用于从纳米线制造发射体结构的改进方法，其中纳米线被涂覆有磁性材料，以允许发射器阵列中的线的有用对准，并且利用技术在最终结构中提供对准的纳米线所需的突出。在一个实施例中，提供至少部分地由磁性材料涂覆的纳米线，所述纳米线具有约0.1μm至约10,000μm的平均长度。纳米线在液体介质中混合，施加磁场以对准纳米线。液体介质设置有能够固结成固体基质例如导电颗粒或金属盐的前体材料，该基质将纳米线固定在一个排列的取向上。对准的纳米线的一部分例如通过蚀刻基质材料的表面部分而暴露，以提供所需的纳米线尖端突起。

9. 发明授权

US06504292B1 Field emitting device comprising metallized nanostructures and method for making the same 有权
标题翻译：包括金属化纳米结构的场致发射器件及其制造方法
公开(公告)号：US06504292B1
公开(公告)日：2003-01-07
申请号：US09365059
申请日：1999-07-30
申请人： Kyung Moon Choi , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Kyung Moon Choi , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J113
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469 , Y10S977/745 , Y10S977/939
摘要： In accordance with the invention, an improved conductive nanostructure assembly comprises an array of metallized nanostructures disposed on a conductive substrate. The substrate can also be metallized. Such assemblies provide continuous electron transport from the substrate to the tips of the nanostructures. Several ways of making such assemblies are described along with several devices employing the assemblies.
摘要翻译：根据本发明，改进的导电纳米结构组件包括设置在导电衬底上的金属化纳米结构阵列。衬底也可以金属化。这样的组件提供从衬底到纳米结构的尖端的连续的电子传输。与使用组件的几个装置一起描述制造这种组件的几种方式。

10. 发明授权

US5648699A Field emission devices employing improved emitters on metal foil and methods for making such devices 失效
标题翻译：在金属箔上使用改进的发射体的场致发射器件和用于制造这种器件的方法
公开(公告)号：US5648699A
公开(公告)日：1997-07-15
申请号：US555594
申请日：1995-11-09
申请人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： G09F9/313 , H01H9/02 , H01J1/304 , H01J9/02 , H01J31/12 , H01J1/30
CPC分类号： H01J9/025 , H01J2201/30403 , H01J2201/30457
摘要： The present invention provides improved methods for making field emission devices by which one can pre-deposit and bond the diamond particles or islands on a flexible metal foil at a desirably high temperature (e.g., near 900.degree. C. or higher), and then subsequently attach the high-quality- emitter-coated conductor foil onto the glass substrate. In addition to maximizing the field emitter properties, these methods provide high-speed, low-cost manufacturing. Since the field emitters can be pre-deposited on the metal foil in the form of long continuous sheet wound as a roll, the cathode assembly can be made by a high-speed, automated bonding process without having to subject each of the emitter-coated glass substrates to plasma heat treatment in a vacuum chamber.
摘要翻译：本发明提供了用于制造场致发射器件的改进方法，通过该方法可以在理想的高温（例如接近900℃或更高）下预先沉积并将金刚石颗粒或岛结合在柔性金属箔上，然后随后将高品质发射极涂覆的导体箔附着在玻璃基板上。除了最大化场发射器性能之外，这些方法提供高速，低成本的制造。由于场致发射体可以预先沉积在金属箔上，以卷绕成卷的长连续片的形式，阴极组件可以通过高速，自动化的接合工艺制成，而不必对每个发射器涂覆玻璃基板在真空室中进行等离子体热处理。

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