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1. 发明申请

US20070085104A1 Robust Group III Light Emitting Diode for High Reliability in Standard Packaging Applications 有权
标题翻译：强大的III类发光二极管在标准封装应用中具有高可靠性
公开(公告)号：US20070085104A1
公开(公告)日：2007-04-19
申请号：US11539423
申请日：2006-10-06
申请人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Allen Mieczkowski
发明人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Allen Mieczkowski
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.
摘要翻译：公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。接触层，欧姆接触和钝化层由透射在活性异质结中产生的光的材料制成。

2. 发明申请

US20050095737A1 Robust group III light emitting diode for high reliability in standard packaging applications 有权
标题翻译：坚固的III类发光二极管，用于标准封装应用中的高可靠性
公开(公告)号：US20050095737A1
公开(公告)日：2005-05-05
申请号：US10983983
申请日：2004-11-08
申请人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Mieczkowski
发明人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Mieczkowski
IPC分类号： H01L21/318 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/44 , H01L21/00
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
摘要翻译：公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。还公开了一种制造发光二极管的方法和结合二极管的LED灯。

3. 发明申请

US20050017256A1 Flip-chip bonding of light emitting devices 有权
标题翻译：发光器件的倒装键合
公开(公告)号：US20050017256A1
公开(公告)日：2005-01-27
申请号：US10920101
申请日：2004-08-17
申请人： David Slater , Jayesh Bharathan , John Edmond , Mark Raffeto , Anwar Mohammed , Peter Andrews , Gerald Negley
发明人： David Slater , Jayesh Bharathan , John Edmond , Mark Raffeto , Anwar Mohammed , Peter Andrews , Gerald Negley
IPC分类号： H01L21/60 , H01L33/20 , H01L33/40 , H01L33/62 , H01L23/48 , H01L21/00
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要翻译：通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上，发光器件死到底座。选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。还提供具有预定图案的导电芯片附着材料的发光器件裸片。在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中级环氧树脂。还提供了具有B级可固化模具环氧树脂的发光器件模具。

4. 发明申请

US20070284604A1 LIGHT EMITTING DIODES INCLUDING TRANSPARENT OXIDE LAYERS 有权
标题翻译：发光二极管，包括透明氧化层
公开(公告)号：US20070284604A1
公开(公告)日：2007-12-13
申请号：US11842350
申请日：2007-08-21
申请人： David Slater , Robert Glass , Charles Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric Tarsa
发明人： David Slater , Robert Glass , Charles Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric Tarsa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. A reflector is provided between the mounting support and the diode region, that is configured to reflect light that is emitted from the diode region back into the diode region, through the substrate that is transparent to optical radiation in the predetermined wavelength range and from the plurality of pedestals, upon application of voltage across the diode region. A layer of Indium Tin Oxide (ITO) is provided between the reflector and the diode region.
摘要翻译：发光二极管包括具有第一和第二相对面并且对于预定波长范围内的光辐射透明的衬底，其被图案化以在横截面中限定多个基座，其从第一面朝向第二张脸。第二面上的二极管区域被配置为在施加二极管区域上的电压时将预定波长范围内的光发射到衬底中。配置在与衬底相对的二极管区域上的安装支撑件被配置为支撑二极管区域，使得从二极管区域发射到衬底中的光在施加二极管区域上的电压时从第一面发射。在安装支撑件和二极管区域之间提供反射器，其被配置为将从二极管区域发射的光反射回二极管区域，穿过对于预定波长范围内的光辐射透明的基板和从多个在二极管区域施加电压时，在反射器和二极管区域之间设置一层氧化铟锡（ITO）。

5. 发明申请

US20050118738A1 Pattern for improved visual inspection of semiconductor devices 有权
公开(公告)号：US20050118738A1
公开(公告)日：2005-06-02
申请号：US11032342
申请日：2005-01-10
申请人： Ralph Tuttle , Christopher Plunket , David Slater , Gerald Negley , Thomas Schneider
发明人： Ralph Tuttle , Christopher Plunket , David Slater , Gerald Negley , Thomas Schneider
IPC分类号： H01L21/66 , H01L23/482 , H01L23/544 , H01L33/00 , G01R31/26
CPC分类号： H01L23/544 , H01L23/4825 , H01L2223/54453 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is disclosed that enhances quality control inspection of device. The structure includes a substrate having at least one planar face, a first metal layer on the planar face, and covering some, but not all of the planar face in a first predetermined geometric pattern, and a second metal layer on the planar face, and covering some, but not all of the planar face in a second geometric pattern that is different from the first geometric pattern. A quality control method for manufacturing a semiconductor device is also disclosed. The method includes the steps of placing a first metal layer on a semiconductor face of a device in a first predetermined geometric pattern, placing a second metal layer on the same face of the device as the first layer and in a second predetermined geometric pattern that is different from the first geometric pattern, and then inspecting the device to identify the presence or absence of one or both of the patterns on the face.

6. 发明申请

US20070034323A1 Systems for assembling components on submounts and methods therefor 有权
标题翻译：用于组装子系统组件的系统及其方法
公开(公告)号：US20070034323A1
公开(公告)日：2007-02-15
申请号：US11585515
申请日：2006-10-24
申请人： Norbert Hiller , Peter Andrews , David Slater , Gerald Negley
发明人： Norbert Hiller , Peter Andrews , David Slater , Gerald Negley
IPC分类号： B32B37/00
CPC分类号： H01L21/67144 , H01L21/67132 , Y10T29/5313 , Y10T29/53174 , Y10T29/53178 , Y10T156/1089 , Y10T156/1097 , Y10T156/1707 , Y10T156/1712 , Y10T156/1734 , Y10T156/1744 , Y10T156/1911 , Y10T156/1978
摘要： A component assembly system is provided that includes a longitudinally elongated tape carrier, a longitudinally elongated submount carrier, and an assembly machine. A plurality of components may be attached to the tape carrier. The assembly machine is adapted to receiving the tape carrier, with the components attached thereto, and to receive the submount carrier. The assembly machine is further adapted to bring the tape carrier in close proximity to the submount carrier, and to attach the components to the submounts on the submount carrier.
摘要翻译：提供了一种部件组装系统，其包括纵向细长的带状载体，纵向细长的底座载体和组装机。多个部件可以附接到带载体。组装机适于接收带载体的带状载体，并接收底座载体。装配机还适于使带载体紧靠于底座托架，并将部件附接到副安装架托架上的底座上。

7. 发明申请

US20050285126A1 LED fabrication via ion implant isolation 有权
公开(公告)号：US20050285126A1
公开(公告)日：2005-12-29
申请号：US11154619
申请日：2005-06-16
申请人： Yifeng Wu , Gerald Negley , David Slater , Valeri Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald Negley , David Slater , Valeri Tsvetkov , Alexander Suvorov
IPC分类号： H01L29/22 , H01L33/30 , H01L33/32
CPC分类号： H01L33/32 , H01L33/305
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

8. 发明申请

US20060124953A1 Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same 审中-公开
标题翻译：半导体发光器件安装基板和包括空腔和盖板的封装以及其封装方法
公开(公告)号：US20060124953A1
公开(公告)日：2006-06-15
申请号：US11011748
申请日：2004-12-14
申请人： Gerald Negley , David Slater
发明人： Gerald Negley , David Slater
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L25/0753 , H01L33/486 , H01L33/52 , H01L33/58 , H01L2224/48091 , H01L2924/00014
摘要： A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces. The first metal face includes a cavity that is configured to mount at least one semiconductor light emitting device therein, and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity. One or more semiconductor light emitting devices are mounted in the cavity. A cap having an aperture is configured to matingly attach to the solid metal block adjacent the first metal face such that the aperture is aligned to the cavity. Reflective coatings, conductive traces, insulating layers, pedestals, through holes, lenses, flexible films, optical elements, phosphor, integrated circuits, optical coupling media, recesses and/or meniscus control regions also may be provided in the package. Related packaging methods also may be provided.
摘要翻译：用于半导体发光器件的安装衬底包括具有第一和第二相对金属面的实心金属块。第一金属面包括被构造成在其中安装至少一个半导体发光器件的空腔，并且将由其中安装的远离腔的至少一个半导体发光器件发射的光反射。一个或多个半导体发光器件安装在腔中。具有孔径的盖被配置成与邻近第一金属表面的固体金属块配合地附接，使得孔与空腔对准。还可以在包装中提供反射涂层，导电迹线，绝缘层，基座，通孔，透镜，柔性膜，光学元件，荧光体，集成电路，光学耦合介质，凹部和/或弯液面控制区域。也可以提供相关的包装方法。

9. 发明申请

US20060108595A9 LED fabrication via ion implant isolation 有权
公开(公告)号：US20060108595A9
公开(公告)日：2006-05-25
申请号：US10840463
申请日：2004-05-06
申请人： Yifeng Wu , Gerald Negley , David Slater , Valeri Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald Negley , David Slater , Valeri Tsvetkov , Alexander Suvorov
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/145 , H01L24/73 , H01L33/0095 , H01L33/025 , H01L33/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , Y02P80/30 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

10. 发明申请

US20050029533A1 LED fabrication via ion implant isolation 有权
标题翻译：通过离子注入隔离制造LED
公开(公告)号：US20050029533A1
公开(公告)日：2005-02-10
申请号：US10840463
申请日：2004-05-05
申请人： Yifeng Wu , Gerald Negley , David Slater , Valeri Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald Negley , David Slater , Valeri Tsvetkov , Alexander Suvorov
IPC分类号： H01L21/00 , H01L33/00 , H01L33/02 , H01L33/14 , H01L33/32
CPC分类号： H01L33/145 , H01L24/73 , H01L33/0095 , H01L33/025 , H01L33/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , Y02P80/30 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
摘要翻译：半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结，型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。在p型外延层上形成金属接触层。在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

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