会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby
    • 自对准金属与Ge形成的基板和由此形成的结构形成接触
    • US07682968B2
    • 2010-03-23
    • US12108001
    • 2008-04-23
    • Cyril Cabral, Jr.Roy A. CarruthersChristophe DetavernierSimon GaudetChristian LavoieHuiling Shang
    • Cyril Cabral, Jr.Roy A. CarruthersChristophe DetavernierSimon GaudetChristian LavoieHuiling Shang
    • H01L21/44
    • H01L21/28525H01L21/28052H01L21/28518H01L29/665
    • A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.
    • 提供了一种形成锗硅化物的方法,该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构,该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后,在所述含Ge基材上形成含Si金属层。 在暴露的区域中,含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后,使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中,附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构,其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。