专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07263397B2 Method and apparatus for catheter navigation and location and mapping in the heart 有权
标题翻译：用于导管导航的方法和装置，以及心脏中的位置和映射
公开(公告)号：US07263397B2
公开(公告)日：2007-08-28
申请号：US10819027
申请日：2004-04-06
申请人： John A. Hauck , Jeff A. Schweitzer , Michael Craven , Valtino Afonso , Holly Cotner , Frank Callaghan , John Schultz
发明人： John A. Hauck , Jeff A. Schweitzer , Michael Craven , Valtino Afonso , Holly Cotner , Frank Callaghan , John Schultz
IPC分类号： A61B5/042
CPC分类号： A61B5/06 , A61B5/0422 , A61B5/065 , A61B5/1076 , A61B5/7207 , A61B2034/2053 , A61B2034/2072 , A61B2562/0209 , A61B2562/046 , A61N1/3625 , A61N1/3702 , G06F19/00
摘要： A medical system for finding and displaying the location of electrodes within the body. The electrodes may be used to measure the voltage on the heart wall and display this as an activation map on a geometry representing the heart chamber.
摘要翻译：用于查找和显示电极在体内的位置的医疗系统。电极可用于测量心脏壁上的电压并将其显示为表示心室的几何形状的激活图。

2. 发明授权

US08052738B2 Intraluminal flexible stent device 失效
标题翻译：管腔内柔性支架装置
公开(公告)号：US08052738B2
公开(公告)日：2011-11-08
申请号：US12052269
申请日：2008-03-20
申请人： Michael Craven
发明人： Michael Craven
IPC分类号： A61F2/06
CPC分类号： A61F2/915 , A61F2/91 , A61F2002/91516 , A61F2002/91525 , A61F2002/91541 , A61F2002/91575 , A61F2220/005 , A61F2220/0058 , A61F2230/0054
摘要： A stent made up of at least two connected bands, each band having a pattern of undulations formed from long, short and mid-sized segments connected together by turns. In particular, the pattern includes a repeating series having five segments: a long segment, a short segment, a mid-sized segment, a mid-sized segment, a short segment (LSMMS). When adjacent bands are connected together to form the stent body, the LSMMS segment configuration forms a series of consecutive tapered gaps between the consecutive unconnected close ended turns of adjacent bands which provide greater flexibility for the stent. The series of consecutive tapered gaps allow the stent to flex with little or no interference with adjacent bands when the stent is tracked around a small radius bend in a vessel. In addition, the length of the longest rigid element of the stent is decreased to further improve flexibility. A rigid element is formed by the lengths of the segments on both sides of a connection between adjacent bands. By decreasing the length of this rigid element, the length which must be tracked around the bends of a vessel is shortened and thus the stent is easier to advance.
摘要翻译：由至少两个连接的带构成的支架，每个带具有由长，短和中等尺寸的片段形成的波纹图案，其由匝连接在一起。特别地，该图案包括具有五个段的重复序列：长段，短段，中等段，中等段，短段（LSMMS）。当相邻带连接在一起以形成支架体时，LSMMS段构型在相邻带的连续未连接的近端匝之间形成一系列连续的锥形间隙，这为支架提供了更大的灵活性。一系列连续的锥形间隙允许支架在邻近带的几乎或不干涉下弯曲，当支架围绕容器中的小半径弯曲进行跟踪时。此外，支架的最长刚性元件的长度减小以进一步提高柔韧性。刚性元件由相邻带之间的连接的两侧上的段的长度形成。通过减小该刚性元件的长度，必须围绕容器弯曲部追踪的长度被缩短，因此支架更容易前进。

3. 发明申请

US20070126023A1 GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE 有权
标题翻译：减少偏差密度非极性氮化钠的生长
公开(公告)号：US20070126023A1
公开(公告)日：2007-06-07
申请号：US11670332
申请日：2007-02-01
申请人： Benjamin Haskell , Michael Craven , Paul Fini , Steven DenBaars , James Speck , Shuji Nakamura
发明人： Benjamin Haskell , Michael Craven , Paul Fini , Steven DenBaars , James Speck , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： C30B29/406 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.
摘要翻译：非极性氮化镓（GaN）膜的横向外延生长（LEO）导致显着降低的缺陷密度。

4. 发明申请

US20060008941A1 Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy 有权
标题翻译：通过氢化物气相外延生长平面，非极性a面平面氮化镓
公开(公告)号：US20060008941A1
公开(公告)日：2006-01-12
申请号：US10537385
申请日：2003-07-15
申请人： Benjamin Haskell , Paul Fini , Shigemasa Matsuda , Michael Craven , Steven DenBaars , James Speck , Shuji Nakamura
发明人： Benjamin Haskell , Paul Fini , Shigemasa Matsuda , Michael Craven , Steven DenBaars , James Speck , Shuji Nakamura
IPC分类号： H01L21/00
CPC分类号： C30B25/02 , C30B29/40 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02587 , H01L21/02609 , H01L21/0262
摘要： Highly planar non-polar a-plane GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques
摘要翻译：通过氢化物气相外延（HVPE）生长高平面非极性a面GaN膜。所得到的膜适合于通过各种生长技术的后续装置再生长

5. 发明申请

US20060278865A1 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices 有权
标题翻译：非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件
公开(公告)号：US20060278865A1
公开(公告)日：2006-12-14
申请号：US11472033
申请日：2006-06-21
申请人： Michael Craven , Stacia Keller , Steven DenBaars , Tal Margalith , James Speck , Shuji Nakamura , Umesh Mishra
发明人： Michael Craven , Stacia Keller , Steven DenBaars , Tal Margalith , James Speck , Shuji Nakamura , Umesh Mishra
IPC分类号： H01L31/00
CPC分类号： C30B29/403 , C30B25/02 , C30B25/04 , C30B25/105 , C30B25/18 , C30B29/406 , C30B29/605 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al, B, In, Ga)N quantum well and heterostructure materials and devices.
摘要翻译：一种形成非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的方法。非极性（11个（超（20）个）a面GaN层使用MOCVD在r平面（1（超芯（102））蓝宝石衬底上生长，这些非极性（11个（超（20）个a面GaN层包括用于生产非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的模板。

6. 发明申请

US20060128124A1 Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy 有权
标题翻译：通过氢化物气相外延生长减少的位错密度非极性氮化镓
公开(公告)号：US20060128124A1
公开(公告)日：2006-06-15
申请号：US10537644
申请日：2003-07-15
申请人： Benjamin Haskell , Michael Craven , Paul Fini , Steven DenBaars , James Speck , Shuji Nakamura
发明人： Benjamin Haskell , Michael Craven , Paul Fini , Steven DenBaars , James Speck , Shuji Nakamura
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.
摘要翻译：通过氢化物气相外延（HVPE）的非极性a面平面氮化镓（GaN）膜的横向外延生长（LEO）导致显着降低的缺陷密度。

7. 发明申请

US20050040385A1 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices 有权
标题翻译：非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件
公开(公告)号：US20050040385A1
公开(公告)日：2005-02-24
申请号：US10413690
申请日：2003-04-15
申请人： Michael Craven , Stacia Keller , Steven Denbaars , Tal Margalith , James Speck , Shuji Nakamura , Umesh Mishra
发明人： Michael Craven , Stacia Keller , Steven Denbaars , Tal Margalith , James Speck , Shuji Nakamura , Umesh Mishra
IPC分类号： C23C16/04 , C30B25/02 , C30B25/04 , C30B25/10 , C30B25/18 , C30B29/38 , C30B29/40 , C30B29/60 , H01L21/205 , H01S5/343 , H01L31/072
CPC分类号： C30B29/403 , C30B25/02 , C30B25/04 , C30B25/105 , C30B25/18 , C30B29/406 , C30B29/605 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
摘要翻译：一种形成非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的方法。非极性（11个（超（20）个）a面GaN层使用MOCVD在r平面（1（超芯（102））蓝宝石衬底上生长，这些非极性（11个（超（20）个a面GaN层包括用于生产非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的模板。

8. 发明申请

US20100269950A1 Apparatus and Method for Forming a Wave Form for a Stent From a Wire 审中-公开
标题翻译：用于从电线形成支架的波形的装置和方法
公开(公告)号：US20100269950A1
公开(公告)日：2010-10-28
申请号：US12428581
申请日：2009-04-23
申请人： Mark Hoff , Daniel Moore , Michael Craven , Gianfranco Pellegrini , Erik Griswold
发明人： Mark Hoff , Daniel Moore , Michael Craven , Gianfranco Pellegrini , Erik Griswold
IPC分类号： B21F45/00
CPC分类号： B21F1/04 , A61F2/90 , B21F45/008
摘要： An apparatus for forming a wave form for a stent from a wire includes a first forming member configured to move substantially parallel to a first axis and to move substantially parallel to a second axis that is orthogonal to the first axis, and a second forming member configured to move substantially parallel to the first axis and to move substantially parallel to the second axis. The second forming member is positioned opposite from the first forming member relative to the second axis along which the wire is configured to travel. The apparatus includes a controller configured to control movement of the first forming member relative to the wire and to control movement of the second forming member relative to the wire so that the first forming member and the second forming member deform the wire in opposite directions to form a portion of the wave form.
摘要翻译：一种用于从电线形成支架波形的装置包括构造成基本上平行于第一轴线移动并基本上平行于与第一轴线正交的第二轴线移动的第一形成部件，以及构造成基本平行于第一轴线移动并基本上平行于第二轴线移动。第二成形构件相对于第二轴定位成与第一成形构件相对，线沿其构造成行进。该装置包括：控制器，被配置为控制第一成形构件相对于导线的运动，并且控制第二成形构件相对于线的运动，使得第一成形构件和第二成形构件沿相反的方向变形导线，以形成波形的一部分。

9. 发明申请

US20080319535A1 Vascular Stent and Method of Making Vascular Stent 审中-公开
标题翻译：血管支架和血管支架方法
公开(公告)号：US20080319535A1
公开(公告)日：2008-12-25
申请号：US11767826
申请日：2007-06-25
申请人： Michael Craven , Michael Krivoruchko , Gianfranco Pelligrini , Matthew Baldwin
发明人： Michael Craven , Michael Krivoruchko , Gianfranco Pelligrini , Matthew Baldwin
IPC分类号： A61F2/06
CPC分类号： A61F2/91 , A61F2/88 , A61F2/915 , A61F2002/91525
摘要： A stent and method of forming a stent include a wire bent into a waveform spirally wrapped into a hollow cylindrical shape. The waveform includes a first end portion, a middle portion, and a second end portion. The middle portion of the waveform includes a first amplitude and a first period. The first end portion of the waveform includes a first plurality of amplitudes and a first plurality of periods, wherein the first plurality of amplitudes decrease from adjacent the middle portion to a first end of the wire and first plurality of frequencies increase from adjacent the middle portion to the first end of the wire. The waveform may also include a second end portion with a second plurality of amplitudes and a second plurality of periods, wherein the second plurality of amplitudes decrease from adjacent the middle portion to a second end of the wire and the second plurality of frequencies increase from adjacent the middle portion to the second end of the wire.
摘要翻译：支架和形成支架的方法包括弯曲成螺旋卷绕成中空圆柱形状的波形的线。波形包括第一端部，中间部分和第二端部。波形的中间部分包括第一幅度和第一周期。波形的第一端部包括第一多个幅度和第一多个周期，其中第一多个振幅从相邻的中间部分延伸到线的第一端，并且第一多个频率从相邻的中间部分增加到电线的第一端。波形还可以包括具有第二多个幅度和第二多个周期的第二端部分，其中第二多个幅度从相邻的中间部分到第二端减小，并且第二多个频率从相邻的线的中间部分到第二端。

10. 发明申请

US20070128844A1 Non-polar (a1,b,in,ga)n quantum wells 审中-公开
标题翻译：非极性（a1，b，in，ga）n个量子阱
公开(公告)号：US20070128844A1
公开(公告)日：2007-06-07
申请号：US10582390
申请日：2003-12-11
申请人： Michael Craven , Steven DenBaars
发明人： Michael Craven , Steven DenBaars
IPC分类号： H01L21/28
CPC分类号： H01L33/24 , C30B25/02 , C30B25/04 , C30B25/105 , C30B25/18 , C30B29/403 , C30B29/406 , C30B29/605 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L29/155 , H01L29/2003 , H01L33/0025 , H01L33/007 , H01L33/06 , H01L33/32 , H01L33/325
摘要： A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.
摘要翻译：制造非极性a面GaN /（Al，B，In，Ga）N多量子阱（MQW）的方法。 a面MQW通过金属有机化学气相沉积（MOCVD）在适当的GaN /蓝宝石模板层上生长，阱宽度范围为20埃至70埃。来自a-plane MQWs的室温光致发光（PL）发射能量遵循使用自适应泊松 - 薛定er（SCPS）计算建模的平方井趋势。对于a面MQW，在52的量子阱宽度处获得最佳PL发射强度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式