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1. 发明申请

US20080011996A1 MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE 审中-公开
标题翻译：具有可切换电阻的多层设备
公开(公告)号：US20080011996A1
公开(公告)日：2008-01-17
申请号：US11456591
申请日：2006-07-11
申请人： Johannes Georg Bednorz , Walter Heinrich Riess , Siegfried F. Karg , Gerhard Ingmar Meijer , German Hammerl
发明人： Johannes Georg Bednorz , Walter Heinrich Riess , Siegfried F. Karg , Gerhard Ingmar Meijer , German Hammerl
IPC分类号： H01L29/02
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： The present invention provides a microelectronic device comprising a resistance structure including a plurality of programmable resistance layers and at least one intermediate layer such that an intermediate layer is placed between two programmable resistance layers. The programmable resistance layers can be individually doped or may consist of different materials. Each programmable resistance layer may be optimized for a specific application. The microelectronic device can be used as a programmable resistor or a memory cell as it exhibits switchable electrical resistance and does not require a time-consuming conditioning process.
摘要翻译：本发明提供了一种微电子器件，其包括电阻结构，该电阻结构包括多个可编程电阻层和至少一个中间层，使得中间层位于两个可编程电阻层之间。可编程电阻层可以单独掺杂或由不同的材料组成。可针对特定应用优化每个可编程电阻层。微电子器件可以用作可编程电阻器或存储器单元，因为其具有可切换的电阻并且不需要耗时的调节处理。

2. 发明申请

US20110198394A1 SYSTEM AND METHOD FOR LONG-TERM ARCHIVING OF DIGITAL DATA 审中-公开
公开(公告)号：US20110198394A1
公开(公告)日：2011-08-18
申请号：US12704667
申请日：2010-02-12
申请人： German Hammerl , Jochen Dieter Mannhart
发明人： German Hammerl , Jochen Dieter Mannhart
IPC分类号： G06F17/00 , G06K7/10
CPC分类号： G06K19/06037
摘要： A method and a system for the automated digital archiving of data comprises (1) a writing step in which data are subjected to a first algorithm producing an encoded file which is written into or onto a durable storage medium, preferably with an expected lifetime exceeding 50 years, in a machine-recognizable pattern with a predefined high density and (2) a reading step, in which the storage medium is scanned to obtain an image of the pattern, e.g. a raster graphic of the image, transferring the image to a memory, and storing it therein. Subsequently, by means of pattern recognition, the bits in the data pattern are identified, the value/sequence of these bits determined, and a bit stream for readout produced. The pattern produced in the writing step may encompass two parts, a first part comprising the stored data and a second part, possibly in human readable format, comprising file format information which, in the reading step, is used for identifying the bits and/or decoding the bit stream to derive its content. The writing step may include writing the file as a regular bit pattern onto the durable storage medium using a redundancy and/or an error correction algorithm. It may also comprise applying at least two different first algorithms to the data, thus encoding said data into at least two differently encoded files and writing each of said differently encoded files into or onto the durable storage medium as a regular bit pattern. It may further include writing differently encoded files as at least one regular bit pattern onto the storage medium using redundancy and/or error correction, thus providing a multiple redundancy of the data to be archived.The invention also concerns an appropriately adapted system including means for creating an encoded file in a self-describing, corruption-safe format, means for writing said encoded file into or onto a storage medium, and second means including means for scanning the medium and locating existing machine-recognizable regular patterns, means for imaging each pattern into a data pattern in a memory, means for analysing the data pattern and identifying bits in said data pattern, and for producing a bit stream as output. The invention further concerns a method for reading or reconstructing data from a data carrier by scanning said data carrier to create an image of said data, producing an image comprising at least a part of said data in a memory, analyzing said image to derive a bit pattern, and reading said bit pattern to generate a bit stream representing said data on said data carrier.

3. 发明授权

US06782282B2 Superconductor system with enhanced current carrying capability 失效
标题翻译：具有增强载流能力的超导体系统
公开(公告)号：US06782282B2
公开(公告)日：2004-08-24
申请号：US10463734
申请日：2003-06-16
申请人： Hartmut Ulrich Bielefeldt , Barbel Martha Gotz , German Hammerl , Johannes Wilhelmus Maria Hilgenkamp , Jochen Dieter Mannhart , Andreas Fritz Albert Schmehl , Christof Walter Schneider , Robert Ralf Schulz
发明人： Hartmut Ulrich Bielefeldt , Barbel Martha Gotz , German Hammerl , Johannes Wilhelmus Maria Hilgenkamp , Jochen Dieter Mannhart , Andreas Fritz Albert Schmehl , Christof Walter Schneider , Robert Ralf Schulz
IPC分类号： H01B1200
CPC分类号： H01L39/128 , B32B18/00 , C04B35/45 , C04B35/4508 , C04B35/4512 , C04B35/4521 , C04B35/47 , C04B35/628 , C04B35/64 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3251 , C04B2235/3256 , C04B2235/3282 , C04B2235/3284 , C04B2235/3286 , C04B2235/3296 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/662 , C04B2235/85 , C04B2235/94 , Y10S505/78 , Y10S505/781
摘要： The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of bicrystalline or polycrystalline superconductor structures, especially of high-Tc superconductors. By providing an appropriate predetermined dopant profile across the superconductor structure, in particular within or in the vicinity of the grain boundaries, the space-charge layers at the grain boundaries are reduced and thereby the current transport properties of the superconductor significantly improved. Simultaneously, the influence of magnetic fields on the critical current densities is significantly reduced, which in turn enhances the overall supercurrent carrying capabilities while keeping the supercurrent transport properties of the grains at good values.
摘要翻译：本发明涉及双晶体或多晶超导体结构，特别是高Tc超导体的超导载体能力的提高，即临界电流密度的增加。通过在超导体结构，特别是在晶界之内或附近提供适当的预定掺杂剂分布，晶界处的空间电荷层减少，从而显着提高超导体的电流传输性能。同时，磁场对临界电流密度的影响显着降低，从而提高了整体超导载运能力，同时保持了晶粒的超导传输特性。

4. 发明申请

US20050173679A1 Superconductors and methods for making such superconductors 审中-公开
标题翻译：超导体和制造这种超导体的方法
公开(公告)号：US20050173679A1
公开(公告)日：2005-08-11
申请号：US10502243
申请日：2002-02-21
申请人： Jochen Mannhart , German Hammerl , Stephan Leitenmeier , Andreas Schmehl , Christof Schneider
发明人： Jochen Mannhart , German Hammerl , Stephan Leitenmeier , Andreas Schmehl , Christof Schneider
IPC分类号： H01L39/14 , H01L39/24 , H01B1/00
CPC分类号： H01L39/143 , H01L39/248
摘要： This invention concerns an improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of polycrystalline superconductor structures, especially of high-Tc superconductors fabricated with a coated conductor technique to provide superconducting layers containing flat grains. A superconductor with superior critical current density is obtained by joining, i.e. pressing or otherwise bringing into intensive facial contact, preferably superconducting contact, two or more such superconducting layers.
摘要翻译：本发明涉及改进超导载体能力，即临界电流密度的增加，多晶超导体结构，特别是用涂覆导体技术制造的高T超导体，提供含有平坦的超导层谷物。具有优异的临界电流密度的超导体通过接合，即压制或以其它方式进行紧密的面部接触，优选超导接触，获得两个或更多个这样的超导层。

5. 发明授权

US06699820B2 Method for making a superconductor with enhanced current carrying capability 失效
标题翻译：制造具有增强的载流能力的超导体的方法
公开(公告)号：US06699820B2
公开(公告)日：2004-03-02
申请号：US09798189
申请日：2001-03-02
申请人： Hartmut Ulrich Bielefeldt , Barbel Martha Gotz , German Hammerl , Johannes Wilhelmus Maria Hilgenkamp , Jochen Dieter Mannhart , Andreas Fritz Albert Schmehl , Christof Walter Schneider , Robert Ralf Schulz
发明人： Hartmut Ulrich Bielefeldt , Barbel Martha Gotz , German Hammerl , Johannes Wilhelmus Maria Hilgenkamp , Jochen Dieter Mannhart , Andreas Fritz Albert Schmehl , Christof Walter Schneider , Robert Ralf Schulz
IPC分类号： H01L3924
CPC分类号： H01L39/128 , B32B18/00 , C04B35/45 , C04B35/4508 , C04B35/4512 , C04B35/4521 , C04B35/47 , C04B35/628 , C04B35/64 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3251 , C04B2235/3256 , C04B2235/3282 , C04B2235/3284 , C04B2235/3286 , C04B2235/3296 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/662 , C04B2235/85 , C04B2235/94 , Y10S505/78 , Y10S505/781
摘要： The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of bicrystalline or polycrystalline superconductor structures, especially of high-Tc superconductors. By providing an appropriate predetermined dopant profile across the superconductor structure, in particular within or in the vicinity of the grain boundaries, the space-charge layers at the grain boundaries are reduced and thereby the current transport properties of the superconductor significantly improved. Simultaneously, the influence of magnetic fields on the critical current densities is significantly reduced, which in turn enhances the overall supercurrent carrying capabilities while keeping the supercurrent transport properties of the grains at good values.
摘要翻译：本发明涉及双晶体或多晶超导体结构，特别是高Tc超导体的超导载体能力的提高，即临界电流密度的增加。通过在超导体结构，特别是在晶界之内或附近提供适当的预定掺杂剂分布，晶界处的空间电荷层减少，从而显着提高超导体的电流传输性能。同时，磁场对临界电流密度的影响显着降低，从而提高了整体超导载运能力，同时保持了晶粒的超导传输特性。

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