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1. 发明申请

US20050173679A1 Superconductors and methods for making such superconductors 审中-公开
标题翻译：超导体和制造这种超导体的方法
公开(公告)号：US20050173679A1
公开(公告)日：2005-08-11
申请号：US10502243
申请日：2002-02-21
申请人： Jochen Mannhart , German Hammerl , Stephan Leitenmeier , Andreas Schmehl , Christof Schneider
发明人： Jochen Mannhart , German Hammerl , Stephan Leitenmeier , Andreas Schmehl , Christof Schneider
IPC分类号： H01L39/14 , H01L39/24 , H01B1/00
CPC分类号： H01L39/143 , H01L39/248
摘要： This invention concerns an improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of polycrystalline superconductor structures, especially of high-Tc superconductors fabricated with a coated conductor technique to provide superconducting layers containing flat grains. A superconductor with superior critical current density is obtained by joining, i.e. pressing or otherwise bringing into intensive facial contact, preferably superconducting contact, two or more such superconducting layers.
摘要翻译：本发明涉及改进超导载体能力，即临界电流密度的增加，多晶超导体结构，特别是用涂覆导体技术制造的高T超导体，提供含有平坦的超导层谷物。具有优异的临界电流密度的超导体通过接合，即压制或以其它方式进行紧密的面部接触，优选超导接触，获得两个或更多个这样的超导层。

2. 发明申请

US20050107260A1 Superconductor with optimized microstructure and method for making such a superconductor 失效
标题翻译：具有优化微结构的超导体和制造这种超导体的方法
公开(公告)号：US20050107260A1
公开(公告)日：2005-05-19
申请号：US10501747
申请日：2002-01-29
申请人： Jochen Mannhart
发明人： Jochen Mannhart
IPC分类号： H01L39/14 , H01L39/24 , H01B1/00
CPC分类号： H01L39/2454 , H01L39/143 , Y10T29/49014
摘要： The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of polycrystalline superconductor structures, especially of high-Tcsuperconductors. By modifying the microstructure of the substrate or by appropriately influencing the buffer layers in coated conductors to obtain grains with large aspect ratios which are predominantly oriented along the direction of the current flow, grain boundaries with large areas are obtained in the polycrystalline superconducting film that can support large critical currents along the superconductor. Thereby large critical currents are obtained in the superconductor for a given spread of misorientation angles of the grains.
摘要翻译：本发明涉及改进多晶超导体结构，特别是高T超导体的超临界承载能力，即临界电流密度的增加。通过改变衬底的微观结构或通过适当地影响涂覆导体中的缓冲层以获得主要沿着电流方向定向的具有较大纵横比的晶粒，在多晶超导膜中获得具有大面积的晶界，支持沿着超导体的大的临界电流。因此，对于晶粒的定向角度的给定扩散，在超导体中获得大的临界电流。

3. 发明授权

US06211673B1 Apparatus for use in magnetic-field detection and generation devices 失效
标题翻译：用于磁场检测和产生装置的装置
公开(公告)号：US06211673B1
公开(公告)日：2001-04-03
申请号：US09021256
申请日：1998-02-10
申请人： Christoph Gerber , Johannes W. Hilgenkamp , Jochen Mannhart
发明人： Christoph Gerber , Johannes W. Hilgenkamp , Jochen Mannhart
IPC分类号： G11B5127
CPC分类号： G01Q60/56 , G01Q80/00 , G01R33/0358 , G01R33/0385 , G11B5/00 , G11B5/127 , G11B9/14 , G11B9/1409 , G11B2005/0002 , Y10S977/849 , Y10S977/86 , Y10S977/861 , Y10S977/863 , Y10S977/865 , Y10S977/948 , Y10S977/96
摘要： A magnetic-field-detecting and/or generating apparatus comprises a non-ferromagnetic tip with a longitudinal member of ferromagnetic material embedded in the tip. Further, magnetic-shield means is arranged around the tip. At the end of the longitudinal member a magnetic-field device is arranged. The same principle can be applied to read/write heads for use in magnetic-storage devices.
摘要翻译：磁场检测和/或发生装置包括非铁磁尖端，其具有埋在尖端中的铁磁材料的纵向构件。此外，磁屏蔽装置设置在尖端周围。在纵向构件的端部设置有磁场装置。相同的原理可以应用于读/写磁头用于磁存储设备。

4. 发明授权

US6111268A Electronic device 失效
标题翻译：电子设备
公开(公告)号：US6111268A
公开(公告)日：2000-08-29
申请号：US118617
申请日：1998-07-17
申请人： Jochen Mannhart , Bernd Mayer
发明人： Jochen Mannhart , Bernd Mayer
IPC分类号： H01L39/22 , H01L29/06 , H01L31/0256
CPC分类号： H01L39/228
摘要： The invention relates to an inverted JOFET with an at least bicrystalline electrically conductive substrate-layer bearing an insulating element and a superconductive element with a Josephson-junction. The substrate-layer is connected to a control-element. The invention further relates to a method for making such a JOFET. The grain boundary in the substrate-layer thereby maps into the Josephson-junction in the superconductive element.
摘要翻译：本发明涉及具有至少双晶导电衬底层的反向JOFET，其具有绝缘元件和具有约瑟夫逊结的超导元件。衬底层连接到控制元件。本发明还涉及制造这种JOFET的方法。衬底层中的晶界由此映射到超导元件中的约瑟夫逊结中。

5. 发明授权

US5266558A Superconducting circuit elements with metallic substrate and method for manufacturing the same 失效
标题翻译：具有金属基板的超导电路元件及其制造方法
公开(公告)号：US5266558A
公开(公告)日：1993-11-30
申请号：US843880
申请日：1992-02-27
申请人： Frank Lichtenberg , Jochen Mannhart , Darrell Schlom
发明人： Frank Lichtenberg , Jochen Mannhart , Darrell Schlom
IPC分类号： H01L39/22 , C01G1/00 , C01G55/00 , H01L39/02 , H01L39/14 , B05D5/12 , H01B12/00
CPC分类号： H01L39/225 , H01L39/146 , Y10S505/701 , Y10S505/702 , Y10S505/729
摘要： These superconducting circuit elements, namely SNS heterostructures, such as, e.g. Josephson junctions and field-effect transistors, have a sandwich structure consisting of at least one layer of high-T.sub.c superconductor material arranged adjacent to a metallic substrate, possibly with an insulating layer in between, the substrate, the superconductor and--if present--the insulator all consisting of materials having at least approximately matching molecular structures and lattice constants. Electrical contacts, such as source, drain and gate electrodes are attached to the superconductor layer and to the substrate, respectively. The electrically conductive substrate consists of a metallic oxide such as strontium ruthenate Sr.sub.2 RuO.sub.4, whereas the superconductor layer is of the copper oxide type and may be YBa.sub.2 Cu.sub.3 O.sub.7-.delta., for example. The insulator layer (10) may consist of SrTiO.sub.3. The manufacture of these devices starts with the preparation of the substrate material from a 2:1,1 molar ratio of SrCO.sub.3 to RuO.sub.2 and involves a floating zone melting process yielding single crystals of the strontium ruthenate Sr.sub.2 RuO.sub.4 material onto whose (001) surface the superconductor layer as well as the barrier layer can be epitaxially deposited.

6. 发明授权

US09865789B2 Device and method for thermoelectronic energy conversion 有权
公开(公告)号：US09865789B2
公开(公告)日：2018-01-09
申请号：US14418917
申请日：2012-07-30
申请人： Theodore Geballe , Stefan Meir , Cyril Stephanos , Andreas Schmehl , Jochen Mannhart
发明人： Theodore Geballe , Stefan Meir , Cyril Stephanos , Andreas Schmehl , Jochen Mannhart
IPC分类号： H01L35/04 , H01L35/32 , H01J45/00
CPC分类号： H01L35/04 , H01J45/00 , H01L35/32
摘要： A thermoelectronic energy converter device (100) comprises an electron emitter (11) being adapted for a temperature-dependent release of electrons (1), an electron collector (21) being adapted for collecting the electrons (1), wherein the electron collector (21) is spaced from the electron emitter (11) by an evacuated gap (2), a gate electrode (31) being arranged between the electron emitter (11) and the electron collector (21) for subjecting the electrons (1) in the gap (2) to an accelerating electric potential, wherein the gate electrode (31) has a plurality of electrode openings (34) being arranged for transmitting electrons (1) miming from the electron emitter (11) to the electron collector (21), and a magnetic field device (50) being arranged for creating a magnetic field with magnetic field lines extending between the electron emitter and the electron collector (11, 21), wherein the magnetic field device (50) is arranged such that at least a portion of the magnetic field lines pass through the electrode openings (34). Furthermore, a method of converting energy using the thermoelectronic energy converter device (100) is described.

7. 发明申请

US20150243867A1 DEVICE AND METHOD FOR THERMOELECTRONIC ENERGY CONVERSION 有权
标题翻译：用于热电能转换的装置和方法
公开(公告)号：US20150243867A1
公开(公告)日：2015-08-27
申请号：US14418917
申请日：2012-07-30
申请人： Theodore Geballe , Stefan Meir , Cyril Stephanos , Andreas Schmehl , Jochen Mannhart
发明人： Theodore Geballe , Stefan Meir , Cyril Stephanos , Andreas Schmehl , Jochen Mannhart
IPC分类号： H01L35/04 , H01L35/32
CPC分类号： H01L35/04 , H01J45/00 , H01L35/32
摘要： A thermoelectronic energy converter device (100) comprises an electron emitter (11) being adapted for a temperature-dependent release of electrons (1), an electron collector (21) being adapted for collecting the electrons (1), wherein the electron collector (21) is spaced from the electron emitter (11) by an evacuated gap (2), a gate electrode (31) being arranged between the electron emitter (11) and the electron collector (21) for subjecting the electrons (1) in the gap (2) to an accelerating electric potential, wherein the gate electrode (31) has a plurality of electrode openings (34) being arranged for transmitting electrons (1) miming from the electron emitter (11) to the electron collector (21), and a magnetic field device (50) being arranged for creating a magnetic field with magnetic field lines extending between the electron emitter and the electron collector (11, 21), wherein the magnetic field device (50) is arranged such that at least a portion of the magnetic field lines pass through the electrode openings (34). Furthermore, a method of converting energy using the thermoelectronic energy converter device (100) is described.
摘要翻译：热电子能量转换器装置（100）包括适于电子（1）的温度依赖性释放的电子发射器（11），适于收集电子（1）的电子收集器（21），其中电子收集器 21）通过抽空间隙（2）与电子发射器（11）间隔开，栅电极（31）布置在电子发射体（11）和电子收集器（21）之间，用于使电子（1）在间隙（2）到加速电位，其中栅电极（31）具有多个电极开口（34），用于将从电子发射器（11）模拟的电子（1）传输到电子收集器（21），和磁场装置（50），其布置成用于产生具有在所述电子发射器和所述电子收集器（11,21）之间延伸的磁场线的磁场，其中所述磁场装置（50）被布置成使得至少一部分的磁场线 ss通过电极开口（34）。此外，描述了使用热电子能量转换器装置（100）转换能量的方法。

8. 发明授权

US5310706A Method for manufacturing high T.sub.c superconducting circuit elements with metallic substrate 失效
标题翻译：用金属基板制造高Tc超导电路元件的方法
公开(公告)号：US5310706A
公开(公告)日：1994-05-10
申请号：US93503
申请日：1993-07-16
申请人： Frank Litchenberg , Jochen Mannhart , Darrell Schlom
发明人： Frank Litchenberg , Jochen Mannhart , Darrell Schlom
IPC分类号： H01L39/22 , C01G1/00 , C01G55/00 , H01L39/02 , H01L39/14 , B05D5/12 , H01L39/24
CPC分类号： H01L39/225 , H01L39/146 , Y10S505/701 , Y10S505/702 , Y10S505/729
摘要： A method for manufacturing a high Tc superconducting circuit elements is disclosed, which comprises the steps of preparing a single crystal conductive substrate of Sr.sub.2 RuO.sub.4 by a floating zone melting process; epitaxially growing on the (001)-surface of the Sr.sub.2 RuO.sub.4 substrate a high Tc copper oxide-based superconducting film with a thickness of 1 to 1000 nm; depositing metal pads onto said superconducting film to form electrical contacts; and applying a metal pad to the surface of the substrate to form an electrical contact.
摘要翻译：公开了一种用于制造高Tc超导电路元件的方法，其包括通过浮动区熔化工艺制备Sr2RuO4的单晶导电衬底的步骤; 在Sr2RuO4基板的（001）表面上外延生长厚度为1〜1000nm的高Tc铜氧化物类超导膜; 将金属焊盘沉积到所述超导膜上以形成电触头; 以及将金属垫施加到所述基板的表面以形成电接触。

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