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1. 发明申请

US20080011996A1 MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE 审中-公开
标题翻译：具有可切换电阻的多层设备
公开(公告)号：US20080011996A1
公开(公告)日：2008-01-17
申请号：US11456591
申请日：2006-07-11
申请人： Johannes Georg Bednorz , Walter Heinrich Riess , Siegfried F. Karg , Gerhard Ingmar Meijer , German Hammerl
发明人： Johannes Georg Bednorz , Walter Heinrich Riess , Siegfried F. Karg , Gerhard Ingmar Meijer , German Hammerl
IPC分类号： H01L29/02
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： The present invention provides a microelectronic device comprising a resistance structure including a plurality of programmable resistance layers and at least one intermediate layer such that an intermediate layer is placed between two programmable resistance layers. The programmable resistance layers can be individually doped or may consist of different materials. Each programmable resistance layer may be optimized for a specific application. The microelectronic device can be used as a programmable resistor or a memory cell as it exhibits switchable electrical resistance and does not require a time-consuming conditioning process.
摘要翻译：本发明提供了一种微电子器件，其包括电阻结构，该电阻结构包括多个可编程电阻层和至少一个中间层，使得中间层位于两个可编程电阻层之间。可编程电阻层可以单独掺杂或由不同的材料组成。可针对特定应用优化每个可编程电阻层。微电子器件可以用作可编程电阻器或存储器单元，因为其具有可切换的电阻并且不需要耗时的调节处理。

2. 发明申请

US20080152932A1 Programmable-Resistance Memory Cell 有权
标题翻译：可编程电阻存储单元
公开(公告)号：US20080152932A1
公开(公告)日：2008-06-26
申请号：US11957797
申请日：2007-12-17
申请人： Johannes Georg Bednorz , Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Johannes Georg Bednorz , Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： B32B15/04 , B32B9/00
CPC分类号： H01L45/08 , G11C13/0002 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641 , Y10T29/49 , Y10T428/31504 , Y10T428/31678
摘要： The present invention relates to a memory cell (10) comprising: a resistive structure (1), and at least two electrodes (2) coupled to the resistive structure (1), wherein: the resistive structure (1) comprises hydrogen, and the resistive structure (1) comprises a material that exhibits a hydrogen ion mobility value of at least 10−8 cm2/Vs.
摘要翻译：本发明涉及一种存储单元（10），包括：电阻结构（1）和耦合到电阻结构（1）的至少两个电极（2），其中：电阻结构（1）包括氢，并且电阻结构（1）包括表现出至少10 -8 V 2 / Vs / Vs的氢离子迁移率值的材料。

3. 发明授权

US07872901B2 Programmable-resistance memory cell 有权
标题翻译：可编程电阻存储单元
公开(公告)号：US07872901B2
公开(公告)日：2011-01-18
申请号：US11957797
申请日：2007-12-17
申请人： Johannes Georg Bednorz , Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Johannes Georg Bednorz , Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： G11C11/00
CPC分类号： H01L45/08 , G11C13/0002 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641 , Y10T29/49 , Y10T428/31504 , Y10T428/31678
摘要： A memory cell (10) includes a resistive structure (1), and at least two electrodes (2) coupled to the resistive structure (1), wherein: the resistive structure (1) includes hydrogen, and the resistive structure (1) includes a material that exhibits a hydrogen ion mobility value of at least 10−8cm2/Vs.
摘要翻译：存储单元（10）包括电阻结构（1）和耦合到电阻结构（1）的至少两个电极（2），其中：电阻结构（1）包括氢，并且电阻结构（1）包括表现出至少10-8cm 2 / Vs的氢离子迁移率值的材料。

4. 发明申请

US20080164455A1 Programmable Non-Volatile Resistance Switching Device 审中-公开
标题翻译：可编程非易失性电阻开关器件
公开(公告)号：US20080164455A1
公开(公告)日：2008-07-10
申请号：US12046525
申请日：2008-03-12
申请人： Santos F. Alvarado , Johannes Georg Bednorz , Gerhard Ingmar Meijer
发明人： Santos F. Alvarado , Johannes Georg Bednorz , Gerhard Ingmar Meijer
IPC分类号： H01L47/00
CPC分类号： G11C13/0007 , G11C13/0004 , G11C19/00 , G11C2213/31 , H01L27/24
摘要： A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable between different states, wherein the first number is larger than two and the second number is larger than the first number divided by two. The electrically conducting channels may be provided in transition metal oxide material, which exhibits a reversibly switchable resistance that is attributed to a switching phenomenon at the interfaces between the electrodes and the transition metal oxide material.
摘要翻译：存储元件包括在两个所述电极的子组之间的第一数量的电极和第二数量的导电通道，所述通道呈现在不同状态之间可逆地切换的电阻，其中第一数量大于2，第二个数字大于第一个数字除以2。导电通道可以设置在过渡金属氧化物材料中，其呈现出由电极和过渡金属氧化物材料之间的界面处的切换现象引起的可逆切换电阻。

5. 发明授权

US07376006B2 Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element 失效
标题翻译：具有双极可编程存储元件的非易失性存储器件中的增强的编程性能
公开(公告)号：US07376006B2
公开(公告)日：2008-05-20
申请号：US11216518
申请日：2005-08-31
申请人： Johannes Georg Bednorz , John Kenneth DeBrosse , Chung Hon Lam , Gerhard Ingmar Meijer , Jonathan Zanhong Sun
发明人： Johannes Georg Bednorz , John Kenneth DeBrosse , Chung Hon Lam , Gerhard Ingmar Meijer , Jonathan Zanhong Sun
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： G11C11/16 , G11C11/5685 , G11C13/0007 , G11C2213/31 , G11C2213/79
摘要： A nonvolatile memory cell includes a bipolar programmable storage element operative to store a logic state of the memory cell, and a metal-oxide-semiconductor device including first and second source/drains and a gate. A first terminal of the bipolar programmable storage element is adapted for connection to a first bit line. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a second bit line, and the gate is adapted for connection to a word line.
摘要翻译：非易失性存储单元包括可操作地存储存储单元的逻辑状态的双极可编程存储元件和包括第一和第二源极/漏极和栅极的金属氧化物半导体器件。双极可编程存储元件的第一端子适于连接到第一位线。第一源极/漏极连接到双极可编程存储元件的第二端子，第二源极/漏极适于连接到第二位线，并且栅极适于连接到字线。

6. 发明授权

US07465952B2 Programmable non-volatile resistance switching device 有权
标题翻译：可编程非易失性电阻开关器件
公开(公告)号：US07465952B2
公开(公告)日：2008-12-16
申请号：US11239495
申请日：2005-09-29
申请人： Santos F. Alvarado , Johannes Georg Bednorz , Gerhard Ingmar Meijer
发明人： Santos F. Alvarado , Johannes Georg Bednorz , Gerhard Ingmar Meijer
IPC分类号： H01L47/00 , H01L29/06 , G11C11/00
CPC分类号： G11C13/0007 , G11C13/0004 , G11C19/00 , G11C2213/31 , H01L27/24
摘要： A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable between different states, wherein the first number is larger than two and the second number is larger than the first number divided by two. The electrically conducting channels may be provided in transition metal oxide material, which exhibits a reversibly switchable resistance that is attributed to a switching phenomenon at the interfaces between the electrodes and the transition metal oxide material.
摘要翻译：存储元件包括在两个所述电极的子组之间的第一数量的电极和第二数量的导电通道，所述通道呈现在不同状态之间可逆地切换的电阻，其中第一数量大于2，第二个数字大于第一个数字除以2。导电通道可以设置在过渡金属氧化物材料中，其呈现出由电极和过渡金属氧化物材料之间的界面处的切换现象引起的可逆切换电阻。

7. 发明授权

US07324366B2 Non-volatile memory architecture employing bipolar programmable resistance storage elements 有权
标题翻译：采用双极可编程电阻存储元件的非易失性存储架构
公开(公告)号：US07324366B2
公开(公告)日：2008-01-29
申请号：US11409440
申请日：2006-04-21
申请人： Johannes Georg Bednorz , Chung Hon Lam , Gerhard Ingmar Meijer
发明人： Johannes Georg Bednorz , Chung Hon Lam , Gerhard Ingmar Meijer
IPC分类号： G11C11/00
CPC分类号： G11C8/14 , G11C11/1655 , G11C11/1657
摘要： A nonvolatile memory array includes a plurality of word lines, a plurality of bit lines, a plurality of source lines, and a plurality of nonvolatile memory cells. Each of at least a subset of the plurality of memory cells has a first terminal connected to one of the plurality of word lines, a second terminal connected to one of the plurality of bit lines, and a third terminal connected to one of the plurality of source lines. At least one of the memory cells includes a bipolar programmable storage element operative to store a logic state of the memory cell, a first terminal of the bipolar programmable storage element connecting to one of a corresponding first one of the bit lines and a corresponding first one of the source lines, and a metal-oxide-semiconductor device including first and second source/drains and a gate. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a corresponding second one of the bit lines, and the gate is adapted for connection to a corresponding one of the word lines. For at least a subset of the plurality of memory cells, each pair of adjacent memory cells along a given word line shares either the same bit line or the same source line.
摘要翻译：非易失性存储器阵列包括多个字线，多个位线，多条源极线和多个非易失性存储器单元。多个存储单元的至少一个子集中的每一个具有连接到多个字线之一的第一端子，连接到多个位线之一的第二端子和连接到多个位线之一的第三端子源线。存储器单元中的至少一个包括可操作以存储存储单元的逻辑状态的双极可编程存储元件，双极可编程存储元件的第一端连接到相应的第一位线之一和相应的第一个的源极线以及包括第一和第二源极/漏极和栅极的金属氧化物半导体器件。第一源极/漏极连接到双极可编程存储元件的第二端子，第二源极/漏极适于连接到对应的第二位线，并且栅极适于连接到相应的一个字线。对于多个存储器单元的至少一个子集，沿着给定字线的每对相邻存储器单元共享相同的位线或相同的源极线。

8. 发明授权

US08470676B2 Programmable element, and memory device or logic circuit 有权
标题翻译：可编程元件，存储器件或逻辑电路
公开(公告)号：US08470676B2
公开(公告)日：2013-06-25
申请号：US12350469
申请日：2009-01-08
申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： H01L21/8236
CPC分类号： H01L29/24 , H01L29/78 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/146 , H01L45/147
摘要： A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.
摘要翻译：多端子可编程元件。可编程元件包括基极上的源电极和漏电极。可编程元件包括不与源极或漏电极接触的参考电压接触。基底包括具有氧空位的过渡金属氧化物，用于在施加的电场下漂移。此外，源极和基极的材料被选择为使得源极和/或漏极电极材料和过渡金属氧化物基底材料的界面形成用于从电极注入基底材料的电子注入的能量势垒。能量势垒的高度取决于基材的氧空位浓度。四个非易失性状态可编程到可编程元件中。

9. 发明申请

US20090174428A1 PROGRAMMABLE ELEMENT, AND MEMORY DEVICE OR LOGIC CIRCUIT 有权
标题翻译：可编程元件，以及存储器件或逻辑电路
公开(公告)号：US20090174428A1
公开(公告)日：2009-07-09
申请号：US12350469
申请日：2009-01-08
申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： H03K19/173 , H01L47/00 , H01L29/66
CPC分类号： H01L29/24 , H01L29/78 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/146 , H01L45/147
摘要： A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.
摘要翻译：多端子可编程元件。可编程元件包括基极上的源电极和漏电极。可编程元件包括不与源极或漏电极接触的参考电压接触。基底包括具有氧空位的过渡金属氧化物，用于在施加的电场下漂移。此外，源极和基极的材料被选择为使得源极和/或漏极电极材料和过渡金属氧化物基底材料的界面形成用于从电极注入基底材料的电子注入的能量势垒。能量势垒的高度取决于基材的氧空位浓度。四个非易失性状态可编程到可编程元件中。

10. 发明授权

US07569459B2 Nonvolatile programmable resistor memory cell 失效
标题翻译：非易失性可编程电阻存储单元
公开(公告)号：US07569459B2
公开(公告)日：2009-08-04
申请号：US11427820
申请日：2006-06-30
申请人： Siegfried F Karg , Gerhard Ingmar Meijer
发明人： Siegfried F Karg , Gerhard Ingmar Meijer
IPC分类号： H01L21/20
CPC分类号： H01L45/08 , H01L45/146 , H01L45/147
摘要： A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure connecting the first and second electrode. The resistance is modifiable by altering the ionic distribution of a high-mobility oxygen ion conductor region. As an alternate embodiment, the memory cell further includes a transition-metal oxide region.
摘要翻译：提供了包括高迁移率离子导体的非易失性可编程电阻存储单元及其制造方法。存储单元包括第一和第二电极以及连接第一和第二电极的可逆且持久的可编程电阻结构。通过改变高迁移率氧离子导体区域的离子分布可以改变电阻。作为替代实施例，存储单元还包括过渡金属氧化物区域。

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