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1. 发明授权

US4684206A Light waveguide with a submicron aperture, method for manufacturing the waveguide and application of the waveguide in an optical memory 失效
标题翻译：具有亚微米孔径的光波导，用于制造波导的方法和波导在光学存储器中的应用
公开(公告)号：US4684206A
公开(公告)日：1987-08-04
申请号：US563715
申请日：1983-12-20
申请人： Johannes G. Bednorz , Winfried Denk , Martin Lanz , Wolfgang D. Pohl
发明人： Johannes G. Bednorz , Winfried Denk , Martin Lanz , Wolfgang D. Pohl
IPC分类号： G02B6/00 , G01Q80/00 , G01Q90/00 , G02B6/02 , G02B27/00 , G11B7/08 , G11B7/135 , G11B7/22 , H01S5/10 , G02B6/10 , B23P15/00 , B29D11/00
CPC分类号： G02B6/02 , G11B7/08 , G11B7/1387 , H01S5/10 , G01Q80/00
摘要： This light waveguide consists of an optically transparent body cut at one end to a sharp tip and polished optically flat at the other end. A metallization layer on its surface is thick enough to be opaque. By pressing the waveguide against a rigid plate the metallization is plastically deformed so as to expose a tiny aperture at the tip of the body through which light can pass. By carefully controlling the deformation of the metallization the diameter of the aperture can be kept between 10 and 500 nm. The waveguide can be incorporated in a semiconductor laser of a read/write head used in an optical storage device.
摘要翻译：该光波导由在一端切割成尖锐的光学透明体并在另一端光学平坦地抛光。其表面上的金属化层足够厚以使其不透明。通过将波导压靠在刚性板上，金属化被塑性变形，以便暴露出能够通过光的身体的尖端处的微小孔。通过仔细地控制金属化的变形，孔的直径可以保持在10和500nm之间。波导可以结合在光存储器件中使用的读/写头的半导体激光器中。

2. 发明授权

US4520570A Piezoelectric x-y-positioner 失效
标题翻译：压电x-y定位器
公开(公告)号：US4520570A
公开(公告)日：1985-06-04
申请号：US567306
申请日：1983-12-30
申请人： Johannes G. Bednorz , Ralph L. Hollis, Jr. , Martin Lanz , Wolfgang D. Pohl , Celia E. Yeack-Scranton
发明人： Johannes G. Bednorz , Ralph L. Hollis, Jr. , Martin Lanz , Wolfgang D. Pohl , Celia E. Yeack-Scranton
IPC分类号： H01J37/20 , B23Q1/36 , G02B21/00 , G02B21/26 , G03F7/20 , G12B1/00 , H01L41/09 , G01B5/00
CPC分类号： B23Q1/36 , G02B21/002 , G02B21/26 , G03F7/70691 , G12B1/00 , H01L41/0946 , H02N2/028 , B82Y35/00
摘要： The positioner comprises a fixed frame (1) from which extends a first pair of parallel piezoelectric benders ("bimorphs") (2, 3) which carry an intermediate frame (4). Actuation of the bimorphs (2, 3) causes lateral translation of the intermediate frame (4) with respect to the fixed frame with the bimorphs (2, 3) forming the flexible sides of a parallelogram.Attached to the intermediate frame (4) is a second pair of bimorphs (12, 13) which extend in a direction orthogonal to the direction of the first pair of bimorphs (2, 3) thus permitting a support frame (14) to exercise a deflection in a direction orthogonal with respect to the movement of the intermediate frame (4).The bimorphs used consist of one or two piezoelectric elements carrying two or more electrodes on either side the proper actuation of which causes the benders to bend with parallel end surfaces at all times.
摘要翻译：定位器包括一个固定框架（1），该固定框架（1）从第一对平行的压电弯曲器（“双压电晶片”）（2,3）延伸出一个中间框架（4）。双压电晶片（2,3）的致动导致中间框架（4）相对于固定框架的横向平移，双面压模（2,3）形成平行四边形的柔性边。连接到中间框架（4）的是第二对双晶片（12,13），其沿与第一对双压电晶片（2,3）的方向正交的方向延伸，从而允许支撑框架（14）运动在相对于中间框架（4）的运动正交的方向上的偏转。使用的双压电晶片由一个或两个压电元件组成，两个或两个以上的电极在其任一侧承载，其正确的致动导致弯曲器随时平行的端面弯曲。

3. 发明授权

US4643627A Vacuum transfer device 失效
标题翻译：真空传送装置
公开(公告)号：US4643627A
公开(公告)日：1987-02-17
申请号：US782849
申请日：1985-10-02
申请人： Johannes G. Bednorz , Pierre L. Gueret , Hermann E. Nievergelt , Hanspeter Ott , Wolfgang D. Pohl , Daniel F. Widmer
发明人： Johannes G. Bednorz , Pierre L. Gueret , Hermann E. Nievergelt , Hanspeter Ott , Wolfgang D. Pohl , Daniel F. Widmer
IPC分类号： G01R31/26 , B25J9/02 , C23C14/56 , C23F4/00 , G12B5/00 , H01L21/02 , H01L21/677 , H01L21/68
CPC分类号： H01L21/67196 , H01L21/67742 , Y10S414/139 , Y10T74/18992
摘要： A vacuum transfer device includes a central processing chamber and a plurality of additional chambers radially positioned around the central chamber and in vacuum-tight connection therewith. A rotatable coulisse arrangement in the central chamber is extendable so as to reach into the additional chambers when correctly aligned. The device can transfer objects among several work stations without intermediate venting and re-evacuation of the system of chambers.
摘要翻译：真空传送装置包括中央处理室和围绕中心室径向定位并与其真空密封连接的多个附加室。中心室中的可旋转的肠胃排列可以延伸，以便在正确对准时进入附加室。该设备可以在多个工作站之间传送物体，而不会对室系统进行中等排放和再排放。

4. 发明授权

US4600854A Piezoelectric stepping rotator 失效
标题翻译：压电式步进旋转器
公开(公告)号：US4600854A
公开(公告)日：1986-07-15
申请号：US655271
申请日：1984-09-28
申请人： Johannes G. Bednorz , Martin A. Lanz , Hermann Nievergelt , Wolfgang D. Pohl
发明人： Johannes G. Bednorz , Martin A. Lanz , Hermann Nievergelt , Wolfgang D. Pohl
IPC分类号： H02N2/00 , H01L41/09 , H02N2/10 , H02N2/12 , H01L41/08
CPC分类号： B82Y15/00 , H02N2/101
摘要： The rotator comprises a piezoelectric bender (4) pivotally supported (2, 3) at one end and carrying a means for being clamped (6) to which a "payload" (7) may be attached. The bender (4) has split electrodes to keep its ends parallel when energized. Normally engaging the means for being clamped (6) are clamping members (15, 17) attached to a pair of piezoelectric benders (10, 11) which are fixed in supports (12, 13) resting on a base plate (1).With the pair of benders (10, 11) energized, the means for being clamped (6) is released and energization of the central bender (4) results in the lifting of the payload (7) by one step. The means for being clamped (6) is then re-arrested and its pivot (2, 3) released by means of actuating the ends of bimorphs (10, 11) associated with clamping members 14 and 16 and the central bender (4) is permitted to stretch. The rotator is then prepared for the next step of rotation about the pivot (2). This embodiment permits rotation through about 15 degrees. Two further embodiments conceived for unlimited rotation are described.
摘要翻译：旋转器包括在一端枢转地支撑（2,3）的压电弯曲机（4），并且承载用于被夹紧的装置（6），“有效载荷”（7）可附接在该装置上。弯曲机（4）具有分裂电极，以在通电时保持其端部平行。通常接合夹紧装置（6）是附接到一对压电弯曲器（10,11）上的夹紧构件（15,17），它们固定在搁置在基板（1）上的支撑件（12,13）中。在一对弯曲器（10,11）通电的情况下，被夹紧的装置（6）被释放并且中心弯曲器（4）的通电导致有效载荷（7）的提升一步。然后，被夹紧的装置（6）被重新阻止，并且其枢轴（2,3）通过致动与夹紧构件14和16以及中心弯曲器（4）相关联的双压电体（10,11）的端部而释放是允许拉伸旋转器随后被准备用于围绕枢轴（2）的下一个旋转步骤。该实施例允许旋转大约15度。描述了为了无限旋转而设想的另外两个实施例。

5. 发明授权

US5528052A Superconductive-channel electric field-effect drive 失效
标题翻译：超导通道电场效应驱动
公开(公告)号：US5528052A
公开(公告)日：1996-06-18
申请号：US171888
申请日：1993-12-22
申请人： Johannes G. Bednorz , Jochen D. Mannhart , Carl A. Mueller , Darrell G. Schlom
发明人： Johannes G. Bednorz , Jochen D. Mannhart , Carl A. Mueller , Darrell G. Schlom
IPC分类号： H01L39/14 , H01L29/06 , B05D5/12 , H01B12/00 , H01L39/22
CPC分类号： H01L39/146
摘要： Proposed is a method for operating a field-effect device comprised of a superconducting current channel having source and drain electrodes connected thereto, said superconducting current channel being separated from a gate electrode by an insulating layer, where the resistance of said current channel is controlled by varying the critical current of the superconducting material through the application of an electrical field across the superconducting current channel, which in turn changes the density of the mobile charge carriers in the superconducting material. Taught is also an inverted MISFET device for performing that method, the device being characterized in that on an electrically conductive substrate an insulating layer is provided which in turn carries a layer consisting of a superconducting material, and that a gate electrode is attached to said substrate, and source and drain electrodes are electrically connected to said superconductor layer. Advantageously, between the substrate and the superconducting layer, a metallic passivation layer may be provided.
摘要翻译：提出了一种用于操作场效应器件的方法，该场效应器件包括具有与其连接的源电极和漏电极的超导电流通道，所述超导电流通道由绝缘层与栅电极分离，其中所述电流通道的电阻由通过在超导电流通道上施加电场来改变超导材料的临界电流，这继而改变超导材料中的可移动电荷载流子的密度。教授也是用于执行该方法的反向MISFET器件，其特征在于，在导电衬底上提供绝缘层，该绝缘层又带有由超导材料组成的层，并且栅电极附着到所述衬底并且源电极和漏电极电连接到所述超导体层。有利地，在衬底和超导层之间可以提供金属钝化层。

6. 发明授权

US07834339B2 Programmable-resistance memory cell 有权
标题翻译：可编程电阻存储单元
公开(公告)号：US07834339B2
公开(公告)日：2010-11-16
申请号：US11612501
申请日：2006-12-19
申请人： Johannes G. Bednorz , Eric A. Joseph , Siegfried F. Karg , Chung H. Lam , Gerhard I. Meijer , Alejandro G. Schrott
发明人： Johannes G. Bednorz , Eric A. Joseph , Siegfried F. Karg , Chung H. Lam , Gerhard I. Meijer , Alejandro G. Schrott
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1641 , Y10S438/90
摘要： The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.
摘要翻译：本发明涉及一种存储单元，包括：电阻结构; 耦合到电阻结构的至少两个电极和至少一个氢储存器结构，其中将电信号施加到所述至少两个电极中的一个电极导致通过改变氢离子来修改电阻结构的电阻电阻结构中的浓度。

7. 发明申请

US20090308313A1 NON-VOLATILE RESISTANCE SWITCHING MEMORY 有权
标题翻译：非易失性电阻开关存储器
公开(公告)号：US20090308313A1
公开(公告)日：2009-12-17
申请号：US12540949
申请日：2009-08-13
申请人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
发明人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
IPC分类号： B05C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.
摘要翻译：一种微电子器件或非易失性电阻切换存储器，包括用于存储数字信息的切换材料。一种方法包括通过CMOS沉积技术在低于400℃的温度下沉积开关材料的步骤。

8. 发明授权

US07848213B2 Data storage device 失效
标题翻译：数据存储设备
公开(公告)号：US07848213B2
公开(公告)日：2010-12-07
申请号：US12185530
申请日：2008-08-04
申请人： Peter Baechtold , Johannes G. Bednorz , Gerd K. Binnig , Giovanni Cherubini , Evangelos S. Eleftheriou , Michel Despont
发明人： Peter Baechtold , Johannes G. Bednorz , Gerd K. Binnig , Giovanni Cherubini , Evangelos S. Eleftheriou , Michel Despont
IPC分类号： G11B9/00
CPC分类号： G11B11/007 , B82Y10/00 , G11B9/1472
摘要： A storage device including a storage medium for storing data in the form of topographic or magnetic marks. At least one probe is mounted on a common frame, the common frame and the storage medium designed for moving relative to each other for creating or detecting said marks. Each probe includes a tip facing the storage medium, a read sensing element, a write element and a capacitive platform, that forms a first electrode and is designed for a voltage potential applied to it independent from a control signal for said read sensing element and for said voltage potential applied to said capacitive platform being independent from a control signal for said write heating element. It further comprises a second electrode arranged in a fixed position relative to the storage medium forming a first capacitor together wherein said first electrode and a medium between the first and second electrode.
摘要翻译：一种存储装置，包括用于以地形或磁标记的形式存储数据的存储介质。至少一个探针安装在公共框架上，公共框架和存储介质被设计用于相对于彼此移动以创建或检测所述标记。每个探针包括面向存储介质的尖端，读取感测元件，写入元件和电容平台，其形成第一电极，并被设计用于独立于用于所述读取感测元件的控制信号的施加于其的电压电位，并且为施加到所述电容平台的所述电压电位独立于用于所述写入加热元件的控制信号。它还包括布置在相对于存储介质固定位置的第二电极，形成第一电容器，其中所述第一电极和第一和第二电极之间的介质。

9. 发明申请

US20080142925A1 PROGRAMMABLE-RESISTANCE MEMORY CELL 有权
标题翻译：可编程电阻存储器单元
公开(公告)号：US20080142925A1
公开(公告)日：2008-06-19
申请号：US11612501
申请日：2006-12-19
申请人： Johannes G. Bednorz , Eric A. Joseph , Siegfried F. Karg , Chung H. Lam , Gerhard I. Meijer , Alejandro G. Schrott
发明人： Johannes G. Bednorz , Eric A. Joseph , Siegfried F. Karg , Chung H. Lam , Gerhard I. Meijer , Alejandro G. Schrott
IPC分类号： H01L29/86 , H01L21/4763
CPC分类号： H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1641 , Y10S438/90
摘要： The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.
摘要翻译：本发明涉及一种存储单元，包括：电阻结构; 耦合到电阻结构的至少两个电极和至少一个氢储存器结构，其中将电信号施加到所述至少两个电极中的一个电极导致通过改变氢离子来修改电阻结构的电阻电阻结构中的浓度。

10. 发明授权

US5602080A Method for manufacturing lattice-matched substrates for high-T.sub.c superconductor films 失效
标题翻译：用于制造高Tc超导体膜的晶格匹配衬底的方法
公开(公告)号：US5602080A
公开(公告)日：1997-02-11
申请号：US193919
申请日：1994-02-09
申请人： Johannes G. Bednorz , Jochen D. Mannhart , Carl A. Mueller , Darrell G. Schlom
发明人： Johannes G. Bednorz , Jochen D. Mannhart , Carl A. Mueller , Darrell G. Schlom
IPC分类号： C30B11/00 , C30B13/00 , C30B15/00 , H01L39/24 , C30B15/20
CPC分类号： C30B29/225 , C30B11/00 , C30B13/00 , C30B15/00 , H01L39/2454 , Y10S505/729
摘要： This method for manufacturing lattice-matched substrates for high-T.sub.c superconductors employs at least two materials chosen from the group of known suitable substrate materials, of which one has a lattice constant smaller than the lattice constant(s) of the perovskite subcell of the selected superconductor material, while the other one has a lattice constant greater than the lattice constant of the perovskite subcell of the selected superconductor. These materials are then powdered and mixed intimately for providing a single-crystal either from the molten mixture of the chosen materials or by thin film deposition, said single-crystal containing appropriate molar percentages of the chosen materials so that resulting lattice constant is essentially the same as that of the selected superconductor material.
摘要翻译：用于制造用于高Tc超导体的晶格匹配衬底的方法采用选自已知合适衬底材料的组中的至少两种材料，其中晶体常数小于所选择的钙钛矿型电池的晶格常数超导体材料，而另一个具有大于所选超导体的钙钛矿亚电池的晶格常数的晶格常数。然后将这些材料粉碎和混合，以从所选材料的熔融混合物中或通过薄膜沉积提供单晶，所述单晶含有所选材料的适当摩尔百分比，使得得到的晶格常数基本相同如所选择的超导体材料。

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