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1. 发明申请

US20060223327A1 Etch with photoresist mask 失效
标题翻译：刻蚀光刻胶掩模
公开(公告)号：US20060223327A1
公开(公告)日：2006-10-05
申请号：US11094559
申请日：2005-03-29
申请人： Jisoo Kim , Sangheon Lee , Binet Worsham , Robert Charatan , S.M. Sadjadi
发明人： Jisoo Kim , Sangheon Lee , Binet Worsham , Robert Charatan , S.M. Sadjadi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.
摘要翻译：提供了一种在衬底上蚀刻电介质层的方法。在电介质层上形成光致抗蚀剂掩模。将基板放置在等离子体处理室中。包含NF 3 N的蚀刻剂气体被提供到等离子体室中。从NF 3 N气体形成等离子体。通过来自NF 3 N 3气体的等离子体通过光致抗蚀剂掩模蚀刻电介质层。

2. 发明授权

US06979579B1 Methods and apparatus for inspecting contact openings in a plasma processing system 失效
标题翻译：用于检查等离子体处理系统中的接触开口的方法和装置
公开(公告)号：US06979579B1
公开(公告)日：2005-12-27
申请号：US10813913
申请日：2004-03-30
申请人： Jisoo Kim , Sangheon Lee , Sean Kang , Binet Worsham , Bi-Ming Yen , Reza Sadjadi , Peter K. Loewenhardt
发明人： Jisoo Kim , Sangheon Lee , Sean Kang , Binet Worsham , Bi-Ming Yen , Reza Sadjadi , Peter K. Loewenhardt
IPC分类号： G01B21/00 , H01J9/42 , H01L21/00 , H01L21/66
CPC分类号： H01J9/42 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In a plasma processing system, a method of inspecting a contact opening of a contact formed in a first layer of the substrate to determine whether the contact reaches a metal layer that is disposed below the first layer is shown. The method includes flowing a gas mixture into a plasma reactor of the plasma processing system, the gas mixture comprising a flow of a chlorine containing gas. The method also includes striking a plasma from the gas mixture; and exposing the contact to the plasma. The method further includes detecting whether metal chloride is present in the contact opening after the exposing.
摘要翻译：在等离子体处理系统中，示出了检查形成在基板的第一层中的接点的接触开口以确定接触是否到达设置在第一层下方的金属层的方法。该方法包括将气体混合物流入等离子体处理系统的等离子体反应器，气体混合物包含含氯气体的流。该方法还包括从气体混合物中冲击等离子体; 并将接触点暴露于等离子体。该方法还包括在曝光后检测接触孔中是否存在金属氯化物。

3. 发明申请

US20070123053A1 Self-aligned pitch reduction 有权
标题翻译：自对准螺距减小
公开(公告)号：US20070123053A1
公开(公告)日：2007-05-31
申请号：US11291303
申请日：2005-11-30
申请人： Jisoo Kim , Sangheon Lee , Daehan Choi , S.M. Sadjadi
发明人： Jisoo Kim , Sangheon Lee , Daehan Choi , S.M. Sadjadi
IPC分类号： H01L21/302
CPC分类号： H01L21/0338
摘要： A method providing features in a dielectric layer is provided. A sacrificial layer is formed over the dielectric layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of dielectric layer features is etched into the dielectric layer through the sacrificial layer. The first set of dielectric layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of dielectric layer features is etched into the dielectric layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.
摘要翻译：提供了一种在电介质层中提供特征的方法。在电介质层上形成牺牲层。一组牺牲层特征被蚀刻到牺牲层中。通过牺牲层将介电层特征的第一组蚀刻到介电层中。第一组介电层特征和一组牺牲层特征用填充材料填充。牺牲层被去除。填充材料的各部分之间的间隙的宽度随收缩侧壁沉积而收缩。通过收缩侧壁沉积将第二组介电层特征蚀刻到介电层中。去除填充材料和收缩侧壁沉积。

4. 发明授权

US08268118B2 Critical dimension reduction and roughness control 有权
标题翻译：关键尺寸减小和粗糙度控制
公开(公告)号：US08268118B2
公开(公告)日：2012-09-18
申请号：US12711420
申请日：2010-02-24
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
IPC分类号： H01L21/3065
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。控制层的开口打开，控制层突破性化学。特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

5. 发明授权

US08614149B2 Critical dimension reduction and roughness control 有权
标题翻译：关键尺寸减小和粗糙度控制
公开(公告)号：US08614149B2
公开(公告)日：2013-12-24
申请号：US13586571
申请日：2012-08-15
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
IPC分类号： H01L21/311
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。控制层的开口打开，控制层突破性化学。特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破化学，其中控制层比蚀刻化学性质比保形层蚀刻更耐腐蚀。

6. 发明申请

US20120309201A1 CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL 有权
标题翻译：关键尺寸减少和粗糙度控制
公开(公告)号：US20120309201A1
公开(公告)日：2012-12-06
申请号：US13586571
申请日：2012-08-15
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。控制层的开口打开，控制层突破性化学。特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

7. 发明授权

US07695632B2 Critical dimension reduction and roughness control 失效
标题翻译：关键尺寸减小和粗糙度控制
公开(公告)号：US07695632B2
公开(公告)日：2010-04-13
申请号：US11142509
申请日：2005-05-31
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。控制层的开口打开，控制层突破性化学。特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

8. 发明授权

US07442649B2 Etch with photoresist mask 失效
标题翻译：刻蚀光刻胶掩模
公开(公告)号：US07442649B2
公开(公告)日：2008-10-28
申请号：US11094559
申请日：2005-03-29
申请人： Jisoo Kim , Sangheon Lee , Binet A. Worsham , Robert Charatan , S.M. Reza Sadjadi
发明人： Jisoo Kim , Sangheon Lee , Binet A. Worsham , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.
摘要翻译：提供了一种在衬底上蚀刻电介质层的方法。在电介质层上形成光致抗蚀剂掩模。将基板放置在等离子体处理室中。包含NF 3 N的蚀刻剂气体被提供到等离子体室中。从NF 3 N气体形成等离子体。通过来自NF 3 N 3气体的等离子体通过光致抗蚀剂掩模蚀刻电介质层。

9. 发明申请

US20060266478A1 Critical dimension reduction and roughness control 失效
公开(公告)号：US20060266478A1
公开(公告)日：2006-11-30
申请号：US11142509
申请日：2005-05-31
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

10. 发明申请

US20050205519A1 Methods for the optimization of substrate etching in a plasma processing system 有权
标题翻译：在等离子体处理系统中优化衬底蚀刻的方法
公开(公告)号：US20050205519A1
公开(公告)日：2005-09-22
申请号：US10804430
申请日：2004-03-19
申请人： Jisoo Kim , Binet Worsham , Bi-Ming Yen , Peter Loewenhardt
发明人： Jisoo Kim , Binet Worsham , Bi-Ming Yen , Peter Loewenhardt
IPC分类号： B44C1/22 , C03C15/00 , C23F1/00 , H01L21/302 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/76811 , H01L21/76813
摘要： A method of etching a substrate in a plasma processing system is disclosed. The substrate has a semi-conductor layer, a first barrier layer disposed above the semi-conductor layer, a low-k layer disposed above the first barrier layer, a third hard mask layer disposed above the low-k layer; a second hard mask layer disposed above the third hard mask layer, and a first hard mask layer disposed above the second hard mask layer. The method includes alternatively etching the substrate with a first etchant and a second etchant, wherein the first etchant has a low selectivity to a first hard mask material of the first hard mask layer, a third hard mask material of the a third hard mask layer, and a first barrier layer material of the first barrier layer, but a high selectivity to a second hard mask material of the second hard mask layer; and wherein the second etchant has a high selectivity to the first hard mask material of the first hard mask layer, the third hard mask material of the third hard mask layer, and the first barrier layer material of the first barrier layer, and the first etchant has a low selectivity to the second hard mask material of the second hard mask layer.
摘要翻译：公开了一种在等离子体处理系统中蚀刻衬底的方法。衬底具有半导体层，设置在半导体层上方的第一势垒层，设置在第一阻挡层上方的低k层，设置在低k层上方的第三硬掩模层; 设置在第三硬掩模层之上的第二硬掩模层，以及设置在第二硬掩模层上方的第一硬掩模层。所述方法包括用第一蚀刻剂和第二蚀刻剂替代地蚀刻所述衬底，其中所述第一蚀刻剂对所述第一硬掩模层的第一硬掩模材料具有低选择性，所述第三硬掩模层的第三硬掩模材料，和第一阻挡层的第一阻挡层材料，但对第二硬掩模层的第二硬掩模材料具有高选择性; 并且其中第二蚀刻剂对第一硬掩模层的第一硬掩模材料，第三硬掩模层的第三硬掩模材料和第一阻挡层的第一阻挡层材料和第一蚀刻剂具有高选择性对第二硬掩模层的第二硬掩模材料具有低选择性。

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